LDTA124TET1G [LRC]
Bias Resistor Transistor;
| 型号： | LDTA124TET1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor 晶体管 |
| 文件： | 总3页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA124TET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
R1
COLLECTOR
1
•
We declare that the material of product compliance with
RoHS requirements.
BASE
2
zAbsolute maximum ratings (Ta=25°C)
EMITTER
Parameter
Collector-base voltage
Symbol
Limits
Unit
V
V
V
CBO
V
V
V
−50
−50
−5
Collector-emitter voltage
Emitter-base voltage
CEO
EBO
Collector current
IC
mA
−100
Collector power dissipation
Junction temperature
Storage temperature
P
C
mW
°C
150
150
Tj
Tstg
°C
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
P6
3000/Tape & Reel
10000/Tape & Reel
LDTA124TET1G
LDTA124TET3G
22
P6
22
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
BVCBO
−50
−50
−5
−
−
−
I
I
I
C
=−50µA
=−1mA
Collector-emitter breakdown voltage BVCEO
−
V
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−
−
V
E
=−50µA
CB=−50V
EB=−4V
I
CBO
EBO
CE(sat)
FE
−
−0.5
−0.5
−0.3
600
28.6
−
µA
µA
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
−
−
I
/I
C B
=−5mA/−0.5mA
h
100
15.4
−
250
22
250
−
V
CE=−5V, I
C
=−1mA
R1
kΩ
MHz
−
Transition frequency
fT
∗
V
CE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTA124TET1G
zElectrical characteristic curves
1k
-1
V
CE=−5V
IC/IB=10
-
500m
500
-
-
200m
100m
200
100
50
Ta=100°C
25°C
-
50m
−40°C
Ta=100°C
25°C
-
20m
10m
20
10
−40°C
-
-5m
5
-2m
-1m
2
1
-10µ
-20µ
-50µ -100
µ
-200
µ
-500µ
-1m -2m -5m -10m
-100µ -200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
COLLECTOR URRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA124TET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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