LDTA143XET1G [LRC]

Bias Resistor Transistor;
LDTA143XET1G
型号: LDTA143XET1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Bias Resistor Transistor

晶体管
文件: 总3页 (文件大小:288K)
中文:  中文翻译
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LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA143XET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
R1  
R2  
COLLECTOR  
1
BASE  
zAbsolute maximum ratings (Ta=25°C)  
2
Limits  
Parameter  
Symbol  
Unit  
EMITTER  
V
CC  
50  
20 to +7  
100  
Supply voltage  
Input voltage  
V
V
V
I
I
O
Output current  
mA  
I
C(Max.)  
100  
mW  
°C  
Power dissipation  
Pd  
200  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
Tstg  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
P10  
4.7  
10  
3000/Tape & Reel  
10000/Tape & Reel  
LDTA143XET1G  
LDTA143XET3G  
P10  
4.7  
10  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
V
I(off)  
I(on)  
2.5  
0.3  
V
CC=−5V, I  
=−0.3V, I  
/I =−10mA/0.5mA  
=−5V  
CC=−50V, V  
O
=−100µA  
Input voltage  
V
V
O
O
=−20mA  
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
1.8  
0.5  
V
mA  
µA  
I
O I  
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=0V  
G
I
30  
3.29  
1.7  
O
=−5V, I  
O
=−10mA  
R
1
4.7  
2.1  
250  
6.11  
2.6  
kΩ  
R
2/R1  
Transition frequency  
f
T
MHz  
V
CE=−10V, I =5mA, f=100MHz  
E
Characteristics of built-in transistor  
1/3  
LESHAN RADIO COMPANY, LTD.  
LDTA143XET1G  
zElectrical characteristic curves  
10m  
5m  
100  
O
V =−0.3V  
VCC=−5V  
50  
2m  
20  
10  
5  
1m  
500µ  
Ta=−40°C  
25°C  
Ta=100°C  
25°C  
200µ  
100°C  
100µ  
50µ  
40°C  
2  
1  
20µ  
10µ  
5µ  
500m  
200m  
100m  
2µ  
1µ  
100µ −200µ −500µ −1m  
2m  
5m 10m 20m  
50m 100m  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
OUTPUT CURRENT : I (V)  
O
INPUT VOLTAGE : VI(off) (V)  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
1k  
1  
VO=−5V  
I
O
/II=20  
500  
500m  
200  
100  
50  
200m  
100m  
50m  
Ta=100°C  
25°C  
Ta=100°C  
25°C  
40°C  
20  
20m  
40°C  
10  
5
10m  
5m  
2
1
2m  
1m  
100µ −200µ −500µ −1m  
2m  
5m 10m 20m  
50m 100m  
100µ −200µ −500µ −1m  
2m  
5m 10m 20m  
50m 100m  
OUTPUT CURRENT : I  
(V)  
O
OUTPUT CURRENT : I (V)  
O
Fig.3 DC current gain vs. output  
current  
Fig.4 Output voltage vs. output  
current  
2/3  
LESHAN RADIO COMPANY, LTD.  
LDTA143XET1G  
SC-89  
NOTES:  
1.DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2.CONTROLLING DIMENSION: MILLIMETERS  
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.  
3/3  

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