LDTA144TET1G_15 [LRC]
Bias Resistor Transistor;
| 型号： | LDTA144TET1G_15 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总3页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA144TET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Limits
Parameter
Symbol
Unit
V
EMITTER
Collector-base voltage
−50
−50
V
V
V
CBO
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
−5
−100
200
I
C
mA
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
mW
°C
150
−55 to +150
Tstg
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
O7
47
3000/Tape & Reel
10000/Tape & Reel
LDTA144TET1G
LDTA144TET3G
O7
47
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
−50
−50
−5
−
I
I
I
C
C
=
−50µA
−
−
V
=−1mA
−
−
V
E
=−50µA
ICBO
EBO
−
−0.5
−0.5
−0.3
600
61.1
−
µA
µA
V
V
V
CB
=
−50V
Emitter cutoff current
I
−
−
EB
=−4V
Collector-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
−
−
I
C
/I
B
=−5mA/−0.5mA
h
FE
100
32.9
−
250
47
250
−
V
CE
=
−5V, I
C=−1mA
R
1
kΩ
MHz
−
Input resistance
f
T
∗
V
CE
=
−10V, IE=5mA, f=100MHz
Transition frequency
∗ Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTA144TET1G
zElectrical characteristic curves
1k
−1
VCE=−5V
lC/lB=10
500
−500m
Ta=100°C
25°C
200
100
−200m
−100m
−50m
−40°C
Ta=100°C
25°C
−40°C
50
20
10
5
−20m
−10m
−5m
2
1
−2m
−1m
−100µ−200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
−10µ −20µ −50µ −100µ −200µ −500µ−1m −2m
−5m −10m
COLLECTOR CURRENT : I
(A)
C
COLLECTOR CURRENT : I
(A)
C
Fig.1 DC current gain vs.collector
current
Fig.2 Collector-emitter saturation
voltage vs.collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA144TET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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