LDTC114GET3G [LRC]

Bias Resistor Transistor;
LDTC114GET3G
型号: LDTC114GET3G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTC114GET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
COLLECTOR  
1
BASE  
R2  
zAbsolute maximum ratings (Ta=25°C)  
2
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
50  
Unit  
V
EMITTER  
VCBO  
VCEO  
V
EBO  
50  
V
5
V
IC  
100  
mA  
Pc  
mW  
Collector Power dissipation  
200  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
H8  
10  
3000/Tape & Reel  
10000/Tape & Reel  
LDTC114GET1G  
LDTC114GET3G  
H8  
10  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
50  
50  
5
Typ.  
10  
250  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
I
I
I
C
=50µA  
=1mA  
V
C
V
E
=720µA  
CB=50V  
EB=4V  
I
CBO  
EBO  
CE(sat)  
FE  
300  
30  
7
0.5  
580  
0.3  
13  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C
=10mA, I  
B
=0.5mA  
h
kΩ  
MHz  
IC  
=5mA, VCE=5V  
Emitter-base resistance  
R
Transition frequency  
Characteristics of built-in transistor  
f
T
V
CE=10V, I = −5mA, f=100MHz  
E
1/3  
LESHAN RADIO COMPANY, LTD.  
LDTC114GET1G  
z
Electrical characteristic curves  
1k  
1
V
CE=5V  
I
C
/I  
=20/1  
B
500  
500m  
Ta=100°C  
Ta= −40°C  
Ta=100°C  
200  
100  
50  
200m  
100m  
50m  
Ta=25°C  
Ta=25°C  
Ta= −40°C  
20  
20m  
10  
5
10m  
5m  
2
1
2m  
1m  
100µ 200µ 500µ 1m 2m  
5m 10m 20m  
50m 100m  
100µ 200µ 500µ 1m 2m  
5m 10m 20m  
50m 100m  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : I (A)  
C
Fig.1 DC current gain  
Fig.2 Collector-Emitter saturation voltage  
vs. Collector current  
vs. Collector current  
2/3  
LESHAN RADIO COMPANY, LTD.  
LDTC114GET1G  
SC-89  
NOTES:  
1.DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2.CONTROLLING DIMENSION: MILLIMETERS  
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.  
3/3  

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