LDTC114GET3G [LRC]
Bias Resistor Transistor;
| 型号： | LDTC114GET3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总3页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC114GET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
COLLECTOR
1
BASE
R2
zAbsolute maximum ratings (Ta=25°C)
2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
50
Unit
V
EMITTER
VCBO
VCEO
V
EBO
50
V
5
V
IC
100
mA
Pc
mW
Collector Power dissipation
200
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
H8
10
3000/Tape & Reel
10000/Tape & Reel
LDTC114GET1G
LDTC114GET3G
H8
10
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
50
50
5
Typ.
−
−
−
−
−
−
−
10
250
Max.
−
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
I
I
I
C
=50µA
=1mA
V
C
−
V
E
=720µA
CB=50V
EB=4V
I
CBO
EBO
CE(sat)
FE
−
300
−
30
7
0.5
580
0.3
−
13
−
µA
µA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C
=10mA, I
B
=0.5mA
h
−
kΩ
MHz
IC
=5mA, VCE=5V
Emitter-base resistance
R
−
Transition frequency
Characteristics of built-in transistor
f
T
∗
−
V
CE=10V, I = −5mA, f=100MHz
E
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTC114GET1G
z
Electrical characteristic curves
1k
1
V
CE=5V
I
C
/I
=20/1
B
500
500m
Ta=100°C
Ta= −40°C
Ta=100°C
200
100
50
200m
100m
50m
Ta=25°C
Ta=25°C
Ta= −40°C
20
20m
10
5
10m
5m
2
1
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m
50m 100m
100µ 200µ 500µ 1m 2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
Fig.1 DC current gain
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
vs. Collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC114GET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
相关型号：
LDTC114TET1G
Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
LEIDITECH
LDTC114YET1G
Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
LEIDITECH
LDTC115EET1G
Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
LEIDITECH
©2020 ICPDF网 联系我们和版权申明