LDTD143ELT3G [LRC]
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network;
| 型号： | LDTD143ELT3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network |
| 文件： | 总3页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD143ELT1G
S-LDTD143ELT1G
Applications
•
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3
1
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2
SOT-23
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
3
R1
R2
COLLECTOR
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Limits
Parameter
Symbol
Unit
EMITTER
Supply voltage
V
CC
V
V
50
−10 to +30
500
Input voltage
V
IN
Output current
I
C
mA
mW
°C
Power dissipation
Junction temperature
Storage temperature
P
D
200
Tj
Tstg
150
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTD143ELT1G
4.7
E6
4.7
3000/Tape & Reel
10000/Tape & Reel
S-LDTD143ELT1G
LDTD143ELT3G
S-LDTD143ELT3G
E6
4.7
4.7
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Symbol Min.
Typ.
Max.
0.5
−
Unit
V
Conditions
V
V
I (off)
I (on)
−
3
−
−
V
CC=5V, I
=0.3V, I
/ I =50mA / 2.5mA
=5V
CC=50V, V
=5V, I =50mA
O
=100µA
VO
O
=20mA
Output voltage
Input current
V
O (on)
−
0.1
−
0.3
1.8
0.5
−
V
mA
µA
−
I
O
I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O (off)
−
−
I=0V
G
I
47
3.29
0.8
−
−
O
O
R1
4.7
1
6.11
1.2
−
kΩ
−
−
−
R
/ R
2 1
Transition frequency
f
T
∗
200
MHz
V
CE=10V, IE= −50mA, f=100MHz
Characteristics of built-in transistor
∗
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
;S-LDTD143ELT1G
LDTD143ELT1G
zElectrical characteristic curves
10m
100
VCC=5V
VO=0.3V
5m
Ta=100˚C
25˚C
50
2m
1m
−40˚C
20
10
500µ
Ta= −40˚C
25˚C
200µ
5
100˚C
100µ
50µ
2
1
20µ
10µ
5µ
500m
200m
500m
2µ
1µ
0
100m
500µ 1m 2m 5m 10m 20m 50m 100m200m
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
1k
lO
/ lI=20
VO=5V
500
500m
Ta=100˚C
25˚C
200m
100m
50m
200
−40˚C
Ta=100˚C
25˚C
100
50
−40˚C
20
10
5
20m
10m
5m
2m
1m
2
1
500µ 1m 2m
5m 10m 20m 50m 100m200m 500m
500µ 1m 2m
5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : I
(A)
O
OUTPUT CURRENT : I
(A)
O
Fig.3 DC current gain vs. output current
Fig.4 Output voltage vs. output current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
;S-LDTD143ELT1G
LDTD143ELT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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