LESD8L5.0CT3G [LRC]
ESD Protection Diodes with Ultra-Low Capacitance;
| 型号： | LESD8L5.0CT3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | ESD Protection Diodes with Ultra-Low Capacitance |
| 文件： | 总4页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
LESD8L5.0CT5G
Transient Voltage
Suppressors
LESD8L5.0CT5G
S-LESD8L5.0CT5G
ESD Protection Diodes with Ultra−Low
Capacitance
1
The ESD8L is designed to protect voltage sensitive components that
require ultra−low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, it is
suited for use in high frequency designs such as USB 2.0 high speed and
antenna line applications.
2
SOD882
Specification Features:
• Ultra Low Capacitance 0.5 pF
• Low Clamping Voltage
1
2
• Small Body Outline Dimensions:
0.039″ x 0.024″ (1.00 mm x 0.60 mm)
• Low Body Height: 0.020″ (0.5 mm)
• Stand−off Voltage: 5 V
• Low Leakage
• Response Time is Typically < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
Ordering information
• This is a Pb−Free Device
Device
Marking
Shipping
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LESD8L5.0CT1G
LESD8L5.0CT3G
LESD8L5.0CT5G
N
N
N
5000/Tape&Reel
8000/Tape&Reel
10000/Tape&Reel
QUALIFIED MAX REFLOW TEMPERATURE:
Device Meets MSL 1 Requirements
260°C
MAXIMUM RATINGS
Rating
Symbol
Value
8
Unit
IEC 61000−4−2 (ESD)
Contact
Air
kV
Total Power Dissipation on FR−5 Board
°P °
D
150
mW
(Note 1) @ T = 25°C
A
Storage Temperature Range
Junction Temperature Range
T
−55 to +150
−55 to +125
260
°C
°C
°C
stg
T
J
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
Rev.C 1/4
LESHAN RADIO COMPANY, LTD.
LESD8L5.0CT5G,S-LESD8L5.0CT5G
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
I
PP
I
PP
V
C
PP
V
RWM
Working Peak Reverse Voltage
I
T
I
R
Maximum Reverse Leakage Current @ V
RWM
I
V
R
BR RWM
V
C
V
V
V
Breakdown Voltage @ I
I
V
V
V
BR
T
R
T
RWM BR C
I
I
Test Current
T
F
I
Forward Current
I
PP
V
F
Forward Voltage @ I
F
P
pk
Peak Power Dissipation
Bi−Directional TVS
C
Capacitance @ V = 0 and f = 1.0 MHz
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
V
(V)
C
V
RWM
I
R
(mA)
V (V) @ I
BR T
@ I = 1 A
PP
(V)
@ V
(Note 2)
(Note 3)
I
T
C (pF)
V
C
RWM
Per IEC61000−4−2
Device
Marking
(Note 4)
Max
Max
1.0
Min
mA
Max
Max
Device
LESD8L5.0CT5G
N
5.0
5.4
1.0
0.9
12.9
Figures 1 and 2
See Below
2. V is measured with a pulse test current I at an ambient temperature of 25°C.
BR
T
3. Surge current waveform per Figure 4.
4. For test procedure see Figures 3.
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
Rev. C 2/4
LESHAN RADIO COMPANY, LTD.
LESD8L5.0CT5G,S-LESD8L5.0CT5G
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test
Voltage
(kV)
First Peak
Current
(A)
100%
90%
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
100
t
PEAK VALUE I
@ 8 ms
r
RSM
90
80
70
60
50
40
30
20
10
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
0
0
20
40
t, TIME (ms)
60
80
Figure 4. 8 X 20 ms Pulse Waveform
Rev. C 3/4
LESHAN RADIO COMPANY, LTD.
LESD8L5.0CT5G,S-LESD8L5.0CT5G
SOD882
Unit:mm
DIMENSION OUTLINE:
Rev. C 4/4
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