LMBTA05UT1G [LRC]
Dual Driver Transistors NPN/PNP Duals RoHS requirements.; 双驱动器晶体管NPN / PNP偶RoHS要求。
| 型号： | LMBTA05UT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Dual Driver Transistors NPN/PNP Duals RoHS requirements. |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Dual Driver Transistors
NPN/PNP Duals
LMBTA05UT1G
LMBTA06UT1G
FEATURES
•
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Value
Rating
Symbol
V CEO
V CBO
V EBO
I C
LMBTA05 LMBTA06
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
60
60
80
80
SC-74
Vdc
4.0
Vdc
500
mAdc
C1
6
B2
5
E2
4
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
TR2
TR1
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
1
2
3
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
556
E1
B1
C2
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
°C
T J , T stg
–55 to +150
DEVICE MARKING
LMBTA05UT1G = 3H, LMBTA06UT1G = 3GM;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
LMBTA05
60
80
4.0
—
—
—
LMBTA06
Emitter–Base Breakdown Voltage
(I E = 100 µAdc, I C = 0)
V (BR)EBO
I CES
Vdc
µAdc
µAdc
Collector Cutoff Current
( V CE = 60Vdc, I B = 0)
—
0.1
Emitter Cutoff Current
I CBO
( V CB = 60Vdc, I E = 0)
LMBTA05
LMBTA06
—
—
0.1
0.1
( V CB = 80Vdc, I E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
300 µs, Duty Cycle
<
< 2.0%.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBTA05UT1G LMBTA06UT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
––
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 100 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 10 mAdc)
Base–Emitter On Voltage
100
100
—
—
VCE(sat)
V BE(sat)
Vdc
Vdc
—
—
0.25
1.2
(I C = 100 mAdc, V CE= 1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain – Bandwidth Product(4)
fT
100
—
MHz
(V CE = 2.0 V, I C = 10mA, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
3H
Shipping
LMBTA05UT1G
LMBTA06UT1G
3000/Tape & Reel
3000/Tape & Reel
3GM
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBTA05UT1G LMBTA06UT1G
SC−74
D
MILLIMETERS
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
NOM
1.00
0.06
0.37
0.18
3.00
1.50
0.95
0.40
2.75
−
MAX
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
6
5
2
4
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
10°
E
H
E
1
3
b
e
q
C
A
0.05 (0.002)
L
q
A1
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
31
inches
mm
0.039
0.8
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev.O 3/3
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