LMUN2237LT1 [LRC]
Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network; 偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络
| 型号： | LMUN2237LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
LMUN2237LT1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
BASE
R
1
ESD Rating –
(INPUT)
R
2
PIN 1
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
Vdc
V
CBO
V
CEO
50
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
D
T = 25°C
A
Derate above 25°C
°C/W
°C/W
°C/W
°C
Thermal Resistance –
Junction-to-Ambient
R
540 (Note 1)
370 (Note 2)
θ
JA
JL
Thermal Resistance –
Junction-to-Lead
R
264 (Note 1)
287 (Note 2)
θ
Junction and Storage
Temperature Range
T , T
J
–55 to +150
stg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN2237LT1-1/4
LESHAN RADIO COMPANY, LTD.
LMUN2237LT1
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
A8P
SOT-23
LMUN2237LT1
47
22
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Symbol
Min
Typ
Max
Unit
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 40 V, I = 0)
I
I
–
–
–
–
50
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 40 V, I = 0)
50
CE
B
CEO
I
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
EBO
0.13
–
–
BE
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
80
–
–
FE
140
–
(V = 10 V, I = 5.0 mA)
CE
C
Collector-Emitter Saturation Voltage (I = 10 mA, I = 5 mA)
V
CE(sat)
Vdc
C
B
0.25
0.2
Output Voltage (on)
(V = 5.0 V, V = 4.0 V, R = 1.0 kΩ)
CC
V
Vdc
–
–
OL
B
L
kΩ
Input Resistor
R
47
32.9
1
61.1
Resistor Ratio
R /R
2.1
1.7
1
2
2.6
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
350
250
200
150
100
R
= 370°C/W
50
0
θ
JA
–50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
LMUN2237LT1-2/4
LESHAN RADIO COMPANY, LTD.
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN2237LT1
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
25°C
T = –25°C
A
25°C
75°C
T = –25°C
A
100
0.1
10
1
0.01
0
5
10
15
20
25
30
35
40
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. V CE(sat) versus IC
Figure 3. DC Current Gain
2
1.8
1.6
1.4
1.2
1
100
10
1
75°C
T = –25°C
A
25°C
0.8
0.6
0.4
0.1
f = 1 MHz
= 0 V
T = 25°C
A
0.01
V
O
= 5 V
14
l
E
0.2
0
0.001
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
16
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = –25°C
A
25°C
75°C
10
1
0
5
10
15
20
25
30
35
40
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
LMUN2237LT1-3/4
LESHAN RADIO COMPANY, LTD.
LMUN2237LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
inches
mm
0.031
0.8
LMUN2237LT1-4/4
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