LP2307LT1G [LRC]
16V P-Channel Enhancement-Mode MOSFET;
| 型号： | LP2307LT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | 16V P-Channel Enhancement-Mode MOSFET |
| 文件： | 总4页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET
LP2307LT1G
S-LP2307LT1G
VDS= -16V
mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.7A = 70
mΩ
DS(ON), Vgs@-2.5V, Ids@-1.0A = 110
R
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
3
D
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
G
1
S
2
Ordering Information
Device
Marking
P07
Shipping
LP2307LT1G
S-LP2307LT1G
3000/Tape&Reel
LP2307LT3G
S-LP2307LT3G
10000/Tape&Reel
P07
Absolute Maximum Ratings
Symbol
Parameter
Rating
-16
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±8
ID@TA=25℃
ID@TA=70℃
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-4.7
A
-3.3
A
IDM
-20
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation
1.1
W
W
℃
℃
Total Power Dissipation
0.7
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Value
110
Unit
℃/W
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-16
-
-
V
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4.7A
70
mΩ
-
48
VGS=-2.7V, ID=-3.8A
-
100 mΩ
110 mΩ
63
65
VGS=-2.5V, ID=-1.0A
-
-0.6
-
-0.85
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4.7A
VDS=-16V, VGS=0V
-1.4
-
V
gfs
Forward Transconductance
8
-
S
Drain-Source Leakage Current (T=25oC)
IDSS
uA
-
-1
j
IGSS
Qg
nA
nC
nC
nC
ns
,
-
-
-
-
-
-
-
-
-
-
-
-
±100
36
-
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=±8V
ID=-4.7A
V
DS=0V
24
18
2.7
22
35
45
25
Qgs
Qgd
td(on)
tr
VDS=-10V
VGS=-4.5V
VDS=-10V
ID=-1A
-
35
55
70
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=6Ω ,VGS=-4.5V
RD=10Ω
ns
40
pF
pF
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
985 1580
VDS=-15V
180
160
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
I S
V
Max Diode Forward Current
Diode Forward Voltage
-1.7
-1.2
A
V
IS=-1.7A, V =0V
SD
GS
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
20
18
16
14
12
10
8
18
16
14
12
10
8
Vgs=2.5V
25°C
Vds=6V
25°C
Vgs=2V
6
6
Vgs=1.5V
4
4
2
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
Vds,DRAIN-TO-SOURCE VOLTAGE(V)
Vgs, GATE-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
1
0.16
0.14
0.12
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Vgs=1.5V
Id=4A
Vgs=2V
0.08
0.06
0.04
0.02
0
Vgs=2.5V
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
2
2.2
2.4
2.6
2.8
3
Id-Drain Current(A)
Vgs-Gate-to-Source Voltage(V)
Figure 3. On–Resistance versus Drain Current
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 4/4
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