LP3415ELT1G [LRC]
20V P-Channel Enhancement-Mode MOSFET;
| 型号： | LP3415ELT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | 20V P-Channel Enhancement-Mode MOSFET |
| 文件： | 总3页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
LP3415ELT1G
S-LP3415ELT1G
VDS= -20V
R
R
DS(ON), Vgs@-4.5V, Ids@-4A = 60mΩ
mΩ
mΩ
DS(ON), Vgs@-2.5V, Ids@-4A = 75
3
RDS(ON), Vgs@-1.8V, Ids@-2A = 85
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
we declare that the material of product
SOT– 23 (TO–236AB)
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
Shipping
Marking
LP3415ELT1G
S-LP3415ELT1G
3000/Tape&Reel
P15
LP3415ELT3G
S-LP3415ELT3G
10000/Tape&Reel
P15
o
Maximum Ratings and Thermal Characteristics (T = 25 C unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
-20
±8
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
VGS
ID
-4
A
IDM
-30
TA = 25oC
TA = 75oC
1
PD
Maximum Power Dissipation
W
0.6
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
TJ, Tstg
RqJC
-55 to 150
oC
100
150
oC/W
2)
Junction-to-Ambient Thermal Resistance (PCB mounted)
RqJA
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .A 1/3
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
ELECTRICAL CHARACTERISTICS
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
V
Static
VGS = 0V, ID = -250uA
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -4A
VGS = -4.5V, ID = -4A
VDS =VGS, ID = -250uA
VDS = -16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS = 0V, f = 1.0MHz
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
-20
85.0
75.0
60.0
-1
mΩ
-0.3
V
-1
uA
uA
Ω
IGSS
±10
Gate Resistance
Rg
6.5
Dynamic3)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4.59
2.14
5.97
2.78
VDS =-10V, ID = -4A
VGS = -4.5V
nC
ns
2.51
3.26
965.2
1604
7716
3452
36.45
128.57
15.17
1930.4
3208
15432
6904
VDD = -10V, RL = 2.5Ω
ID = -1A, VGEN = -4.5V
RG = 3Ω
td(off)
tf
Ciss
Coss
Crss
VDS = -10V, VGS = 0V
f = 1.0 MHz
pF
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
-2.2
-1
A
V
IS = -1A, VGS = 0V
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
Rev .A 2/3
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .A 3/3
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