LPB2305LT1G [LRC]
30V P-Channel Enhancement-Mode MOSFET;
| 型号： | LPB2305LT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | 30V P-Channel Enhancement-Mode MOSFET |
| 文件： | 总5页 (文件大小：1848K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LPB2305LT1G
S-LPB2305LT1G
30V P-Channel Enhancement-Mode MOSFET
1. FEATURES
3
●
VDS = -30V
●
RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ
1
●
RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85mΩ
2
●
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ
SOT23LC
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
●
Advanced trench process technology
●
High density cell design for ultra low on-resistance.
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LPB2305LT1G
LPB2305LT3G
P05
3000/Tape&Reel
10000/Tape&Reel
P05
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VDSS
VGS
Limits
Unit
V
Drain–Source Voltage
-30
Gate–to–Source Voltage – Continuous
Drain Current
±14
V
A
– Continuous TA = 25°C
– Pulsed (Note 1)
ID
-4.2
-30
IDM
5. THERMAL CHARACTERISTICS
Parameter
Symbol
PD
Limits
1.4
Unit
W
Power Dissipation
Thermal Resistance,
RΘJA
140
ºC/W
Junction–to–Ambient(Note 2)
Junction and Storage temperature
TJ,Tstg −55∼+150
ºC
1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in² 2oz Cu PCB board.
Leshan Radio Company, LTD.
Rev.A Nov 2016
1/5
LPB2305LT1G, S-LPB2305LT1G
30V P-Channel Enhancement-Mode MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
-
Unit
Vdc
Drain–Source Breakdown Voltage
(VGS = 0, ID = -250μAdc)
VBRDSS
IDSS
-30
-
-
-
-
μAdc
nAdc
nAdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = -24 Vdc)
-
-
-
-1
Gate–Body Leakage Current, Forward
(VGS = 14 Vdc)
IGSSF
IGSSR
100
-100
Gate–Body Leakage Current, Reverse
(VGS = - 14 Vdc)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
(VDS = -5Vdc, ID = -5Adc)
Gate Threshold Voltage
S
gfs
7.0
11
-
-
Vdc
mΩ
VGS(th)
RDS(on)
(VDS = VGS, ID = -250μAdc)
Static Drain–Source On–State Resistance
(VGS = -10 Vdc, ID = -4.2 Adc)
(VGS = -4.5 Vdc, ID = -4 Adc)
(VGS = -2.5 Vdc, ID = -1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
-0.7
-1.3
-
-
-
53
64
86
70
85
130
pF
pF
pF
Ciss
Coss
Crss
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Output Capacitance
-
-
-
826.18
90.74
53.18
-
-
-
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Reverse Transfer Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
ns
td(on)
tr
-
-
-
-
11.36
2.32
-
-
-
-
(VDD = -15V, RL= 3.6Ω
ID = -1A, VGEN = -10V
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
34.88
3.52
RG = 6Ω)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
V
(VGS = 0 Vdc, ISD = -1 Adc)
-
-
-1
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD.
Rev.A Nov 2016
2/5
LPB2305LT1G, S-LPB2305LT1G
30V P-Channel Enhancement-Mode MOSFET
7.ELRCTRICAL CHARACTERISTICS CURVES
18
16
14
12
10
8
16
VDS=5V
14
12
10
8
VGS=2.6V
VGS=2.1V
150℃
6
6
4
4
25℃
VGS=1.6V
2
2
-55℃
0
0
0
1
2
3
0
2
4
6
VGS,Gate-to-Source Voltage(V)
VDS,Drain-to-Source Voltage(V)
Transfer Characteristics
On-Region Characteristics
0.6
1.4
1.2
1
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
VGS=1.6V
VGS=2.1V
VGS=2.6V
-50
0
50
100
150
0
0.5
1
1.5
2
T,temperature(℃)
ID,Drain Current(A)
RDS(on) vs. ID
VGS(th) vs. Temperature
Leshan Radio Company, LTD.
Rev.A Nov 2016
3/5
LPB2305LT1G, S-LPB2305LT1G
30V P-Channel Enhancement-Mode MOSFET
(Con.)
7.ELRCTRICAL CHARACTERISTICS CURVES
100.0
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
100µs
10.0
1.0
limited
1ms
10ms
0.1s
1s
10s
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Single Pulse Power Rating Junction-to-
Ambient
Maximum Forward Biased Safe
Operating Area
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
RθJA=90°C/W
0.1
0.01
PD
Ton
T
Single Pulse
1.0E-03
0.001
1.0E-06
1.0E-05
1.0E-04
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
Leshan Radio Company, LTD.
Rev.A Nov 2016
4/5
LPB2305LT1G, S-LPB2305LT1G
30V P-Channel Enhancement-Mode MOSFET
8.OUTLINE AND DIMENSIONS
SOT23-LC
SOT23-LC
HE
DIM MIN
0.90 1.00 1.10
A1 0.01 0.06 0.10
NOR
MAX
A
b
c
D
E
e
L
0.30 0.40 0.50
0.10 0.15 0.20
2.80 2.90 3.00
1.50 1.60 1.70
1.80 1.90 2.00
0.20 0.40 0.60
L
L1
e
b
L1 0.45 0.60 0.75
HE 2.60 2.80 3.00
θ
0º
–
10º
All Dimensions in mm
D
GENERAL NOTES
1.Top package surface finish Ra0.4±0.2um
2.Bottom package surface finish Ra0.7±0.2um
3.Side package surface finish Ra0.4±0.2um
9.SOLDERING FOOTPRINT
C
B
SOT23-LC
DIM (mm)
X 0.80
Y 0.90
A 2.40
B 0.95
C 0.95
X
Leshan Radio Company, LTD.
Rev.A Nov 2016
5/5
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