LX8050QLT1G [LRC]
General Purpose Transistors NPN Silicon;
| 型号： | LX8050QLT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
LX8050PLT1G
Series
S-LX8050PLT1G
Series
IC = 0.5A.
ƽEpitaxial planar type.
3
ƽNPN complement: LX8050
ƽPb-Free Package is available.
1
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–23
Shipping
Device
Marking
COLLECTOR
3
(S-)LX8050PLT1G
3000/Tape&Reel
X8A
(S-)LX8050PLT3G
(S-)LX8050QLT1G
(S-)LX8050QLT3G
(S-)LX8050RLT1G
(S-)LX8050RLT3G
10000/Tape&Reel
3000/Tape&Reel
X8A
X8C
X8C
X8E
X8E
X8G
X8G
1
BASE
2
10000/Tape&Reel
3000/Tape&Reel
EMITTER
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
(S-)LX8050SLT1G
(S-)LX8050SLT3G
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
VCBO
VEBO
25
40
5
V
V
V
Collector Current-continuoun
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
1.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,Junction to Ambient
RθJ A
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
RθJ A
417
°C/W
°C
T
j,
T
S
t
g
-55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LX8050PLT1G Series , S-LX8050PLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
–
–
–
–
–
–
V(BR)CEO
V(BR)EBO
V(BR)CBO
25
5
V
V
V
Emitter-Base Breakdown Voltage
(IE=100µΑ)
Collector-Base Breakdown Voltage
(IC=100µΑ)
40
Collector Cutoff Current (VCB=35V)
Emitter Cutoff Current (VEB=4V)
ELECTRICAL CHARACTERISTICS (T
ICBO
IEBO
–
–
–
–
150
150
nA
nA
A
=25°C unless otherwise noted)
Charateristic
Symbol
Min
100
-
Typ
Max
Unit
DC Current Gain
IC=100mA,VCE=1V
hFE
-
600
Collector-Emitter Saturation Voltage
(IC=500mA, IB =50mA)
VCE(sat)
-
0.5
V
NOTE :
*
P
Q
R
S
hFE
100~200
150~300
200-400
300-600
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LX8050PLT1G Series , S-LX8050PLT1G Series
FIG.1 - Current Gain & Collector Current
FIG.2 - Saturation Voltage & Collector Current
1
1000
100
10
CE
V
=1V
0.1
CE(sat)
V
C
B
@ I =10I
1
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
FIG.3 - On Voltage & Collector Current
FIG.4 - Cutoff Frequency & Collector Current
1000
100
10
1
VCE=10V
BE(ON)
CE
V
@ V =1V
0.1
1
0.01
0.1
1
10
100
1000
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
FIG.5 - Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1
1
10
100
Reverse-Biased Voltage (V)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LX8050PLT1G Series , S-LX8050PLT1G Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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