MC74VHC1G07DFT1 [LRC]

Noninverting Buffer with Open Drain Output; 非反相缓冲器,具有开漏输出
MC74VHC1G07DFT1
型号: MC74VHC1G07DFT1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Noninverting Buffer with Open Drain Output
非反相缓冲器,具有开漏输出

触发器 逻辑集成电路 光电二极管 栅
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LESHAN RADIO COMPANY, LTD.  
Noninverting Buffer with  
Open Drain Output  
MC74VHC1G07  
The MC74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology. It  
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.  
The internal circuit is composed of three stages, including a buffer and an open drain output which provides the capability to set the  
output switching level. This allows the MC74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V  
using an external resistor and power supply.  
The MC74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.  
• High Speed: t PD = 3.8 ns (Typ) at V CC = 5 V  
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C  
• Power Down Protection Provided on Inputs  
• Pin and Function Compatible with Other Standard Logic Families  
• Chip Complexity: FET = 105; Equivalent Gate = 26  
MARKING DIAGRAMS  
5
4
1
2
V7d  
3
SC–88A / SOT–353/SC–70  
DF SUFFIX  
CASE 419A  
Pin 1  
d = Date Code  
5
Figure 1. Pinout (Top View)  
4
V7d  
1
2
3
Figure 2. Logic Symbol  
TSOP–5/SOT–23/SC–59  
DT SUFFIX  
CASE 483  
Pin 1  
d = Date Code  
FUNCTION TABLE  
Inputs  
Output  
PIN ASSIGNMENT  
A
L
Y
L
Z
1
2
3
4
5
NC  
IN A  
H
GND  
OUT Y  
V CC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 4 of this data sheet.  
VH7–1/4  
LESHAN RADIO COMPANY, LTD.  
MC74VHC1G07  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
– 0.5 to + 7.0  
– 0.5 to +7.0  
– 0.5 to +7.0  
–20  
Unit  
V
V CC  
V IN  
V OUT  
I IK  
DC Supply Voltage  
DC Input Voltage  
V
DC Output Voltage  
Input Diode Current  
Output Diode Current  
V
mA  
mA  
mA  
mA  
mW  
°C/W  
°C  
I OK  
V OUT < GND; V OUT > V CC  
+20  
I OUT  
I CC  
DC Output Current, per Pin  
DC Supply Current, V CC and GND  
Power dissipation in still air  
Thermal resistance  
+ 25  
+50  
P D  
SC–88A, TSOP–5  
SC–88A, TSOP–5  
200  
θ JA  
T L  
333  
Lead Temperature, 1 mm from Case for 10 s  
Junction Temperature Under Bias  
Storage temperature  
260  
T J  
+ 150  
°C  
T stg  
V ESD  
–65 to +150  
>2000  
> 200  
°C  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
V
Charged Device Model (Note 4)  
N/A  
I LATCH–UP  
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)  
± 500  
mA  
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions  
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is  
not implied. Functional operation should be restricted to the Recommended Operating Conditions.  
2. Tested to EIA/JESD22–A114–A  
3. Tested to EIA/JESD22–A115–A  
4. Tested to JESD22–C101–A  
5. Tested to EIA/JESD78  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
V CC  
Parameter  
Min  
2.0  
0.0  
0.0  
– 55  
0
Max  
5.5  
Unit  
V
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V IN  
5.5  
V
V OUT  
T A  
7.0  
V
Operating Temperature Range  
Input Rise and Fall Time  
+ 125  
100  
20  
°C  
ns/V  
t r ,t f  
V CC = 3.3 ± 0.3 V  
V CC = 5.0 ± 0.5 V  
0
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
Junction  
Time,  
Hours  
Time,  
Years  
117.8  
47.9  
20.4  
9.4  
Temperature °C  
80  
90  
1,032,200  
419,300  
178,700  
79,600  
37,000  
17,800  
8,900  
100  
110  
120  
130  
140  
4.2  
1
2.0  
1.0  
1
10  
100  
1000  
TIME, YEARS  
Figure 3. Failure Rate vs. Time  
Junction Temperature  
VH7–2/4  
LESHAN RADIO COMPANY, LTD.  
MC74VHC1G07  
DC ELECTRICAL CHARACTERISTICS  
V CC  
T A = 25°C  
T A <85°C –55°C<TA<125°C  
Symbol  
Parameter  
Test Conditions  
(V) Min Typ Max Min Max Min Max Unit  
V IH  
Minimum High–Level  
Input Voltage  
2.0 1.5  
3.0 2.1  
4.5 3.15  
5.5 3.85  
2.0  
1.5  
2.1  
1.5  
2.1  
V
V
V
3.15  
3.85  
3.15  
3.85  
V IL  
Maximum Low–Level  
Input Voltage  
0.5  
0.9  
0.5  
0.9  
0.5  
0.9  
3.0  
4.5  
1.35  
1.65  
1.35  
1.65  
1.35  
1.65  
5.5  
V OH  
Minimum High–Level  
Output Voltage  
V IN = V IH or V IL  
2.0 1.9 2.0  
3.0 2.9 3.0  
4.5 4.4 4.0  
1.9  
2.9  
4.4  
1.9  
2.9  
4.4  
I OH = – 50 µA  
V
IN = V IH or V IL  
V IN = V IH or V IL  
I OH = –4 mA  
I OH = –8 mA  
V IN = V IH or V IL  
I OL = 50 µA  
3.0 2.58  
4.5 3.94  
2.48  
3.80  
2.34  
3.66  
V OL  
Maximum Low–Level  
Output Voltage  
2.0  
3.0  
4.5  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
V
IN = V IH or V IL  
V IN = V IH or V IL  
I OL = 4 mA  
3.0  
4.5  
0.36  
0.36  
±0.1  
0.44  
0.44  
±1.0  
0.52  
0.52  
±1.0  
I OL = 8 mA  
I IN  
Maximum Input  
Leakage Current  
Maximum Quiescent  
V IN = 5.5 V or GND  
0 to5.5  
µA  
µA  
µA  
I CC  
I OPD  
V IN = V CC or GND  
V OUT = 5.5 V  
5.5  
0
2.0  
20  
40  
Supply Current  
Maximum Off–state  
Leakage Current  
0.25  
2.5  
5.0  
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns  
T A = 25°C  
Min Typ Max Min Max Min Max Unit  
T A  
<85°C –55°C to 125°C  
Symbol  
Parameter  
Maximum Output  
Enable Time,  
Test Conditions  
t PZL  
V CC = 3.3 ± 0.3 V C L = 15 pF  
R L = R I = 500 C L = 50 pF  
5.0  
7.5  
7.1  
8.5  
10.0  
14.5  
ns  
10.6  
12.0  
Input A to Y  
V CC = 5.0 ± 0.5 V C L = 15 pF  
R L = R I = 500 C L = 50 pF  
V CC = 3.3 ± 0.3 V C L = 50 pF  
R L = R I = 500 Ω  
3.8  
5.3  
7.5  
5.5  
7.5  
6.5  
8.5  
8.0  
10.0  
14.5  
t PLZ  
C IN  
Maximum Output  
Disable Time  
10.6  
12.0  
ns  
V CC = 5.0 ± 0.5 V C L = 50 pF  
R L = R I = 500 Ω  
5.3  
4
7.5  
10  
8.5  
10  
10.0  
10  
Maximum Input  
Capacitance  
pF  
Typical @ 25°C, V CC = 5.0 V  
C PD  
Power Dissipation Capacitance (Note 6)  
18  
pF  
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without  
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD  
x
V CCx  
f in + I CC C PD is used to determine the no–  
.
2
load dynamic power consumption; P D = C PD  
x
V CC  
x
f in + I CC V CC .  
x
VH7–3/4  
LESHAN RADIO COMPANY, LTD.  
MC74VHC1G07  
A
Figure 5. Switching Waveforms  
Figure 4. Output Voltage Mismatch Application  
C L = 50 pF equivalent (Includes jig and probe capacitance)  
R L = R 1 = 500 or equivalent  
R T = Z OUT of pulse generator (typically 50 )  
Figure 6. Test Circuit  
Figure 8. LED Driver  
Figure 7. Complex Boolean Functions  
Figure 9. GTL Driver  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Device  
Logic  
Temp  
Package Type  
(Name/SOT#/  
Common Name)  
Device Order  
Number  
Package Tape and  
Tape and  
Reel Size  
Circuit  
Range  
Technology  
Function Suffix  
Reel Suffix  
Indicator Identifier  
MC74VHC1G07DFT1 MC  
MC74VHC1G07DFT2 MC  
MC74VHC1G07DFT4 MC  
MC74VHC1G07DTT1 MC  
MC74VHC1G07DTT3 MC  
74  
74  
74  
74  
74  
VHC1G  
VHC1G  
VHC1G  
VHC1G  
VHC1G  
07  
07  
07  
07  
07  
DF  
DF  
DF  
DT  
DT  
T1  
SC–70/SC–88A/  
SOT–353  
178 mm (7 in)  
3000 Unit  
T2  
T4  
T1  
T3  
SC–70/SC–88A/  
SOT–353  
178 mm (7 in)  
3000 Unit  
SC–70/SC–88A/  
SOT–353  
330 mm (13 in)  
10,000 Unit  
178 mm (7 in)  
3000 Unit  
SOT–23/TSOPS/  
SC–59  
SOT–23/TSOPS/  
SC–59  
330 mm (13 in)  
10,000 Unit  
VH7–4/4  

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