MMBT5551LT1 [LRC]
High Voltage Transistors(NPN Silicon); 高压晶体管（ NPN硅）
| 型号： | MMBT5551LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | High Voltage Transistors(NPN Silicon) |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
3
NPN Silicon
COLLECTOR
MMBT5550LT1
MMBT5551LT1
1
BASE
2
EMITTER
3
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
140
160
6.0
Unit
1
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Vdc
Vdc
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Vdc
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
MMBT5550
140
160
—
—
MMBT5551
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
Vdc
(I C = 100 µAdc, I E = 0)
MMBT5550
MMBT5551
160
180
—
—
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
I CBO
6.0
—
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
( V CB = 120Vdc, I E = 0)
MMBT5550
MMBT5551
—
—
—
—
100
50
nAdc
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551
Emitter Cutoff Current
100
50
µAdc
I EBO
—
50
nAdc
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
M20–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
––
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
60
80
60
80
20
30
—
—
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I C = 50 mAdc, V CE = 5.0Vdc)
250
250
—
—
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
VCE(sat)
Vdc
Vdc
Both Types
—
0.15
(I C = 50 mAdc, I B = 5.0 mAdc )
MMBT5550
MMBT5551
—
—
0.25
0.20
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
V BE(sat)
Both Types
—
1.0
(I C = 50 mAdc, I B = 5.0 mAdc)
MMBT5550
MMBT5551
—
—
1.2
1.0
M20–2/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
500
300
200
V CE = 1.0 V
V CE = 5.0 V
T J = +125°C
+25°C
100
50
–55°C
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
I C = 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10 1
10 0
1.0
T
J = 25°C
V CE = 30 V
0.8
0.6
0.4
0.2
0
T
J = 125°C
10 –1
10 –2
10 –3
10 –4
10 –5
V
BE(sat) @ I C /I B = 10
I C = I CES
75°C
REVERSE
FORWARD
25°C
V
CE(sat) @ I C /I B = 10
–0.4 –0.3 –0.2 –0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
M20–3/4
LESHAN RADIO COMPANY, LTD.
MMBT5550LT1 MMBT5551LT1
2.5
2
T J = –55°C to +135°C
1.5
1.0
10.2 V
V BB
V CC
–8.8 V
30 V
R C
θ
VC for V CE(sat)
0.5
V in
100
R B
0
3.0 k
0.25 mF
–0.5
–1.0
–1.5
–2.0
–2.5
10 ms
INPUT PULSE
V out
5.1 k
100
θ
VB for V BE(sat)
1N914
V in
t r , t f
<10 ns
DUTY CYCLE = 1.0%
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
100
Values Shown are for I C @ 10 mA
I C , COLLECTOR CURRENT (mA)
Figure 6. Switching Time Test Circuit
Figure 5. Temperature Coefficients
100
1000
500
I C /I B = 10
J = 25°C
70
50
T J = 25°C
T
t r @ V CC = 120 V
30
20
300
200
t r @ V CC = 30 V
10
100
50
7.0
C ibo
5.0
t
d @ V EB(off) = 1.0 V
V CC = 120 V
C obo
3.0
2.0
30
20
10
1.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
100 200
0.2 0.3
0.7 0.5 1.0
2.0 3.0
5.0 7.0 10
20
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 7. Capacitances Figure
8. Turn–On Time
5000
I C /I B = 10
t
f @ V CC = 120 V
3000
2000
T
J = 25°C
t f @ V CC = 30 V
1000
500
300
t
s @ V CC = 120 V
200
100
50
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
M20–4/4
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