MMDL770T1 [LRC]
Schottky Barrier Diode; 肖特基二极管型号: | MMDL770T1 |
厂家: | LESHAN RADIO COMPANY |
描述: | Schottky Barrier Diode |
文件: | 总3页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
MMDL770T1
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
1.0 pF SCHOTTKY
BARRIER DIODE
1
• Device Marking: 5H
1
2
2
CATHODE
ANODE
PLASTIC SOD– 323
CASE 477
MAXIMUM RATINGS
Symbol
Rating
Reverse Voltage
Value
Unit
V
70
Vdc
R
THERMAL CHARACTERISTICS
Symbol
Characteristic
Total Device Dissipation FR–5 Board,*
Max
Unit
P D
200
mW
T A = 25°C
Derate above 25°C
1.57
635
mW/°C
°C/W
R θJA
Thermal Resistance Junction to Ambient
Junction and Storage
T J , T stg
–55 to+150
°C
Temperature Range
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
Package
Shipping
3000 / Tape & Reel
MMDL770T1
SOD–323
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I R = 10 µA)
Symbol
Min
Typ
Max
Unit
V (BR)R
70
—
—
Volts
Diode Capacitance
(V R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V R = 35 V)
C T
I R
—
—
0.5
9.0
1.0
pF
200
nAdc
Forward Voltage
(I F = 1.0 mAdc)
V
—
0.7
1.0
Vdc
F
(I F = 10 mA)
S4–1/3
LESHAN RADIO COMPANY, LTD.
MMDL770T1
TYPICAL CHARACTERISTICS
2.0
1.6
1.2
0.8
0.4
0
500
400
300
200
100
0
MMBD770T1
MMBD770T1
f = 1.0 MHz
KRAKAUER METHOD
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90
100
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
100
10
MMBD770T1
MMBD770T1
A = 100°C
T
1.0
0.1
10
1.0
0.1
T A = 85°C
T A = –40°C
T A = 75°C
0.01
T A = 25°C
T A = 25°C
0.001
0
10
20
30
40
50
0.2
0.4
0.8
1.2
1.6
2.0
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
S4–2/3
LESHAN RADIO COMPANY, LTD.
MMDL770T1
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A
K
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2
1
D
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH
SOLDER PLATING.
MILLIMETERS
INCHES
M I N
DIM
M I N
1.60
1.15
0.80
0.25
MAX
1.80
1.35
1.00
0.40
MAX
0.071
0.053
0.039
0.016
E
C
A
B
C
D
E
H
J
0.063
0.045
0.031
0.010
0.15 REF
0.006 REF
0.00
0.089
2.30
0.10
0.177
2.70
0.000
0.0035
0.091
0.004
0.0070
0.106
H
J
K
NOTE 3
STYLE1:
PIN 1. CATHODE
2. ANODE
0.63 mm
0.025’’
1.60 mm
0.063’’
0.83 mm
0.033’’
2.85 mm
0.112’’
mm
inches
(
)
SOD–323
Soldering Footprint
S4–3/3
相关型号:
MMDL914-T1-LF
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明