MMDL770T1 [LRC]

Schottky Barrier Diode; 肖特基二极管
MMDL770T1
型号: MMDL770T1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件: 总3页 (文件大小:104K)
中文:  中文翻译
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LESHAN RADIO COMPANY, LTD.  
Schottky Barrier Diode  
Schottky barrier diodes are designed primarily for high–efficiency  
UHF and VHF detector applications. Readily available to many other fast  
switching RF and digital applications.  
MMDL770T1  
• Extremely Low Minority Carrier Lifetime  
• Very Low Capacitance — 1.0 pF @ 20 V  
• Low Reverse Leakage — 200 nA (max)  
• High Reverse Voltage — 70 Volts (min)  
• Available in 8 mm Tape and Reel  
1.0 pF SCHOTTKY  
BARRIER DIODE  
1
• Device Marking: 5H  
1
2
2
CATHODE  
ANODE  
PLASTIC SOD– 323  
CASE 477  
MAXIMUM RATINGS  
Symbol  
Rating  
Reverse Voltage  
Value  
Unit  
V
70  
Vdc  
R
THERMAL CHARACTERISTICS  
Symbol  
Characteristic  
Total Device Dissipation FR–5 Board,*  
Max  
Unit  
P D  
200  
mW  
T A = 25°C  
Derate above 25°C  
1.57  
635  
mW/°C  
°C/W  
R θJA  
Thermal Resistance Junction to Ambient  
Junction and Storage  
T J , T stg  
–55 to+150  
°C  
Temperature Range  
*FR–5 Minimum Pad  
ORDERING INFORMATION  
Device  
Package  
Shipping  
3000 / Tape & Reel  
MMDL770T1  
SOD–323  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage  
(I R = 10 µA)  
Symbol  
Min  
Typ  
Max  
Unit  
V (BR)R  
70  
Volts  
Diode Capacitance  
(V R = 20 Volts, f = 1.0 MHz)  
Reverse Leakage  
(V R = 35 V)  
C T  
I R  
0.5  
9.0  
1.0  
pF  
200  
nAdc  
Forward Voltage  
(I F = 1.0 mAdc)  
V
0.7  
1.0  
Vdc  
F
(I F = 10 mA)  
S4–1/3  
LESHAN RADIO COMPANY, LTD.  
MMDL770T1  
TYPICAL CHARACTERISTICS  
2.0  
1.6  
1.2  
0.8  
0.4  
0
500  
400  
300  
200  
100  
0
MMBD770T1  
MMBD770T1  
f = 1.0 MHz  
KRAKAUER METHOD  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
V R , REVERSE VOLTAGE (VOLTS)  
I F , FORWARD CURRENT (mA)  
Figure 1. Total Capacitance  
Figure 2. Minority Carrier Lifetime  
100  
10  
MMBD770T1  
MMBD770T1  
A = 100°C  
T
1.0  
0.1  
10  
1.0  
0.1  
T A = 85°C  
T A = –40°C  
T A = 75°C  
0.01  
T A = 25°C  
T A = 25°C  
0.001  
0
10  
20  
30  
40  
50  
0.2  
0.4  
0.8  
1.2  
1.6  
2.0  
V R , REVERSE VOLTAGE (VOLTS)  
V F , FORWARD VOLTAGE (VOLTS)  
Figure 3. Reverse Leakage  
Figure 4. Forward Voltage  
S4–2/3  
LESHAN RADIO COMPANY, LTD.  
MMDL770T1  
PACKAGE DIMENSIONS  
SOD–323  
PLASTIC PACKAGE  
CASE 477–02  
ISSUE A  
K
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,  
1982.  
2
1
D
B
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH  
SOLDER PLATING.  
MILLIMETERS  
INCHES  
M I N  
DIM  
M I N  
1.60  
1.15  
0.80  
0.25  
MAX  
1.80  
1.35  
1.00  
0.40  
MAX  
0.071  
0.053  
0.039  
0.016  
E
C
A
B
C
D
E
H
J
0.063  
0.045  
0.031  
0.010  
0.15 REF  
0.006 REF  
0.00  
0.089  
2.30  
0.10  
0.177  
2.70  
0.000  
0.0035  
0.091  
0.004  
0.0070  
0.106  
H
J
K
NOTE 3  
STYLE1:  
PIN 1. CATHODE  
2. ANODE  
0.63 mm  
0.025’’  
1.60 mm  
0.063’’  
0.83 mm  
0.033’’  
2.85 mm  
0.112’’  
mm  
inches  
(
)
SOD–323  
Soldering Footprint  
S4–3/3  

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