MMVL809T1 [LRC]

Silicon Tuning Diode; 硅调谐二极管


型号：	MMVL809T1
厂家：	LESHAN RADIO COMPANY
描述：	Silicon Tuning Diode 硅调谐二极管二极管
文件：	总2页 (文件大小：41K)
中文：	中文翻译
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LESHAN RADIO COMPANY, LTD.

Silicon Tuning Diode

MMVL809T1

This device is designed for 900 MHz frequency control and tuning

applications. It provides solid–state reliability in replacement of mechanical

tuning methods.

4.5 – 6.1 pF

VOLTAGE VARIABLE

CAPACITANCE DIODE

• Controlled and Uniform Tuning Ratio

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Device Marking: 5K

PLASTIC, CASE 477

SOD– 323

CATHODE

ANODE

ORDERING INFORMATION

Device

Package

Shipping

MMVL809T1

SOD–323

3000 / Tape & Reel

MAXIMUMRATINGS

Symbol

Rating

Value

Unit

V_R

I_F

Continuous Reverse Voltage

Peak Forward Current

Vdc

mAdc

THERMALCHARACTERISTICS

Symbol

Characteristic

Total Device Dissipation FR–5 Board,*

Max

Unit

P_D

200

T_A= 25°C

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

R_θJA

T_J,T_stg

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Characteristic

Reverse BreakdownVoltage

(I_R= 10 µAdc)

Symbol

Min

Typ

Max

Unit

V_(BR)R

—

Vdc

Reverse Voltage Leakage Current

(V_R= 15 Vdc)

I_R

—

nAdc

C_t, Diode Capacitance

Q, Figure of Merit

V_R= 3.0 Vdc

f = 500 MHz

Min

C_R, Capacitance Ratio

C₃/C₈

V_R= 2.0 Vdc, f = 1.0 MHz

f = 1.0 MHz(1)

Device

Min

Nom

Max

Min

Max

MMVL809T1

4.5

5.3

6.1

1.8

2.6

1. C_Ris the ratio of C_tmeasured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.

MMVL809T1–1/2

LESHAN RADIO COMPANY, LTD.

MMVL809T1

TYPICAL CHARACTERISTICS

1000

V = 3 Vdc

T = 25°C

100

0.1

0.5

1.0

V , REVERSE VOLTAGE (VOLTS)

f, FREQUENCY (GHz)

Figure 1. Diode Capacitance

Figure 2. Figure of Merit

1000

800

1.04

1.03

V = 3.0 Vdc

f = 1.0 MHz

V = 3.0 Vdc

f = 1.0 MHz

1.02

1.01

1.00

0.99

600

400

0.98

0.97

0.96

0.2

0.4

0.6

0.8

1.0

1.2

–75

–50

–25

+25

+50

+75 +100 +125

f, FREQUENCY (GHz)

T , AMBIENT TEMPERATURE (°C)

Figure 4. Diode Capacitance

Figure 3. Series Resistance

MMVL809T1–2/2

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