MV2111 [LRC]
Silicon Tuning Diode; 硅调谐二极管
| 型号： | MV2111 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Silicon Tuning Diode |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance —10%
• Complete Typical Design Curves
6.8-100p
30 VOLTS
1
3
ANODE
CATHODE
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Symbol
V R
MV21XX MMBV21XXLT1 Unit
30
Vdc
I F
200
mAdc
m W
mW/°C
°C
A = 25°C
P D
280
2.8
225
1.8
Forward power Dissipation @T
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T J
+150
T stg
–55 to +150
°C
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR=1.0µAdc)
Symbol
Min
Typ
Max
Unit
V (BR)R
30
—
—
Vdc
Reverse Voltage Leakage Current
(VR=25Vdc,TA=25°C)
IR
—
—
—
0.1
—
µAdc
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)
TCC
280
ppm/°C
MMBV2101~MMBV2109
MV2101~MV2115
–1/3
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C
, Diode Capacitance
T
R, Tuning Ratio
/C
Q, Figure of Merit
= 4.0 Vdc,
T
V
= 4.0 Vdc, f = 1.0 MHz
pF
C
2
V
R
30
R
Device
f = 1.0 MHz
f = 50 MHz
Min
6.1
Nom
6.8
10
Max
7.5
Typ
450
400
400
400
350
300
200
150
100
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
Typ
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
MMBV2101LT1/MV2101
MMBV2103LT1
9.0
11
MV2104
10.8
13.5
19.8
24.3
29.7
42.3
90
12
13.2
16.5
24.2
29.7
36.3
51.7
110
MMBV2105LT1/MV2105
MMBV2107LT1
15
22
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
27
33
47
MV2115
100
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
4.TCC,DIODECAPACITANCETEMPERATURE
COEFFICIENT
1. C T , DIODE CAPACITANCE
(C T = C C + C J ). C T is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the
following equation,which defines TC :
C
2. T R, TUNING RATIO
CT(+85°C) – CT(–65°C )
85+65
106
T R is the ratio of C T measured at 2.0 Vdc divided by
C T measured at 30 Vdc.
.
TC C
=
C T(25°C)
3. Q, FIGURE OF MERIT
Accuracy limited by measurement of CT to±0.1pF.
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
2πfC
Q =
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
~1/16”.
~
MMBV2101~MMBV2109
MV2101~MV2115
–2/3
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
TYPICAL DEVICE CHARACTERISTICS
1000
500
MV2115
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.5
20
30
0.1
0.2
0.3
1.0
2.0
3.0
5.0
10
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Diode Capacitance versus Reverse Voltage
100
1.040
1.030
1.020
50
V = 2.0 Vdc
R
T = 125°C
A
20
10
5.0
V = 4.0 Vdc
R
1.010
1.000
0.990
0.980
0.970
0.960
T = 75°C
A
2.0
1.0
V = 30 Vdc
R
0.50
0.20
0.10
T = 25°C
A
NORMALIZED TO C
at T = 25°C
T
A
V = (CURVE)
0.05
R
0.02
0.01
0
5.0
10
15
20
25
30
-75
-50
-25
0
+25
+50
+75
+100 +125
V , REVERSE VOLTAGE (VOLTS)
R
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
3000
2000
3000
2000
1000
500
1000
MMBV2101LT1/MV2101
500
300
200
300
200
MV2115
100
100
50
MV2115
50
MMBV2109LT1/MV2109
30
20
30
20
T = 25°C
A
f = 50 MHz
T = 25°C
A
V = 4.0 Vdc
R
10
1.0
10
10
10
V , REVERSE VOLTAGE (VOLTS)
20
30
20
30
50
70
100
200 250
2.0
3.0
5.0
7.0
f, FREQUENCY (MHz)
R
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
MMBV2101~MMBV2109
MV2101~MV2115
–3/3
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