S-LBAS70BST3G [LRC]
SCHOTTKY BARRIER DIODE;
| 型号： | S-LBAS70BST3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | SCHOTTKY BARRIER DIODE 二极管 |
| 文件： | 总4页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER
DIODE
LBAS70BST5G
Features
S-LBAS70BST5G
ꢀ
Low forward current
ꢀ High breakdown voltage
ꢀ Guard ring protected
ꢀ Low diode capacitance.
1
ꢀ S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
SOD882
APPLICATIONS
ꢀ Ultra high-speed switching
ꢀ Voltage clamping
2
1
Cathode
Anode
ꢀ Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.Single diodes and double diodes with different
pinning are available.
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
LBAS70BST1G
S-LBAS70BST1G
R
5000/Tape&Reel
LBAS70BST3G
R
R
8000/Tape&Reel
10000/Tape&Reel
S-LBAS70BST3G
LBAS70BST5G
S-LBAS70BST5G
Rev.B 1/4
LESHAN RADIO COMPANY, LTD.
LBAS70BST5G , S-LBAS70BST5G
MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
VR
Min.
-
-
-
-
Max.
70
Unit
V
Conditions
Continuous reverse voltage
Continuous forward current
Repetitive Peak forward surge current
Non-repetitive peak forward current
Storage temperature
IF
70
mA
mA
mA
°C
IFSM
IFSM
Tstg
Tj
70
tp<1s;δ<0.5
100
+150
150
+150
tp<10ms
-65
-
Junction temperature
°C
Operating ambient temperature
Tamb
-65
°C
ELECTRICAL CHARACTERISTICS(TA =25°C)
Parameter
Symbol
Max.
410
750
1
Unit
Conditions
IF=1mA
Forward voltage(Fig.1)
VF
mV
mv
v
IF=10mA
IF=15mA
VR=50V
Reverse current(Fig.2 ;note1)
IR
100
10
nΑ
µA
VR=70V
Charge carrier life time
(krakauer method)
τ
100
2
ps
pF
IF=5mA
Diode capacitance(Fig.4)
Note:
Cd
f=1MHz;VR=0
1. Pulse test:tp=300µs;δ=0.02.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
833
UNIT
k/w
CONDITIONS
Thermal resistance from junction to ambient
Rth j-a
note1
Note
1. FR-4 Minimum Pad.
Rev.B 2/4
LESHAN RADIO COMPANY, LTD.
LBAS70BST5G , S-LBAS70BST5G
Electrical characteristic curves(TA = 25°C)
2
2
10
10
T
=125OC
=85OC
amb
10
1
10
1
T
amb
T
=85OC
T
-
1
10
10
amb
=25OC
-1
T
=125OC
amb
amb
10
-2
T
=25OC
T
=-
40OC
amb
amb
-2
-3
10
10
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
FORWARD VOLTAGE: V (V)
FORWARD VOLTAGE: V (V)
F
R
Fig.1 Forward current as a function of
forward voltage; typical values.
Fig.2 Reverse current as a function of
reverse voltage; typical values.
2
3
10
1.5
2
10
1
10
1
0.5
0
-1
2
0
20
40
60
80
10
1
10
10
f=1MHz Tamb=25OC
FORWARD VOLTAGE: I (mA)
FORWARD VOLTAGE: V (V)
f=10KHz
Fig.3 Differential forward reFsistance as a function
of forward current;typical values.
Fig.4 Diode capacitancRe as a function of reverse
voltage;typical values.
Rev.B 3/4
LESHAN RADIO COMPANY, LTD.
LBAS70BST5G , S-LBAS70BST5G
OUTLINE AND DIMENSIONS
SOLDERING FOOTPRINT
Rev.B 4/4
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