S-LRB751BS-40T3G [LRC]

SCHOTTKY BARRIER DIODE;


型号：	S-LRB751BS-40T3G
厂家：	LESHAN RADIO COMPANY
描述：	SCHOTTKY BARRIER DIODE
文件：	总3页 (文件大小：430K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LESHAN RADIO COMPANY, LTD.

SCHOTTKYBARRIERDIODE

LRB751BS-40T5G

S-LRB751BS-40T5G

zApplications

Low current rectification

Features

Extremelysmall surface mounting type. (SOD882)

Low

High reliability.

We declare that the material of product

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable.

SOD882

Construction

Silicon epitaxial planar

Anode

Cathode

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LRB751BS-40T1G

S-LRB751BS-40T1G

5000/Tape&Reel

LRB751BS-40T3G

8000/Tape&Reel

10000/Tape&Reel

S-LRB751BS-40T3G

LRB751BS-40T5G

S-LRB751BS-40T5G

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperature

200

125

I_FSM

℃

Storage temperature

-40 to +125

Tstg

℃

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Conditions

Symbol

Min.

Typ.

Max.

0.37

0.5

Unit

V_F

I_R

I_F=1mA

Reverse current

V_R=30V

µA

Capacitance between terminals

V_R=1V , f=1MHz

Rev.B 1/3

LESHAN RADIO COMPANY, LTD.

LRB751BS-40T5G , S-LRB751BS-40T5G

zElectrical characteristic curves

100

100000

10000

1000

100

Ta=125℃

Ta=75℃

Ta=125℃

Ta=25℃

Ta=-25℃

0.1

0.01

Ta=-25℃

0.001

100 200 300 400 500 600 700 800

10 15 20 25 30 35 40

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

f=1MHz

0.1

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

Rev.B 2/3

LESHAN RADIO COMPANY, LTD.

LRB751BS-40T5G , S-LRB751BS-40T5G

OUTLINE AND DIMENSIONS

SOLDERING FOOTPRINT

Rev.B 3/3

相关型号：