BAS16W [LUNSURE]

High Speed Switching Diode 350mW; 高速开关二极管为350mW
BAS16W
型号: BAS16W
厂家: Lunsure Electronic    Lunsure Electronic
描述:

High Speed Switching Diode 350mW
高速开关二极管为350mW

二极管 开关
文件: 总2页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Shanghai Lunsure Electronic  
Technology Co.,Ltd  
Tel:0086-21-37185008  
Fax:0086-21-57152769  
BAS16W  
Features  
High Speed  
Switching Diode  
350mW  
l
l
l
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
l High Conductance  
Mechanical Data  
l Case: SOD-123, Molded Plastic  
SOD123  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
l Weight: 0.01 grams ( approx.)  
A
B
C
E
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Non-Repetitive Peak Reverse Volt.  
Symbol  
VRM  
Value  
85  
Unit  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
H
D
75  
V
VR(RMS)  
RMS Reverse Voltage  
53  
V
J
G
Forward Continuous Current(Note1)  
Average Rectified Output Current  
IFM  
Io  
200  
100  
mA  
mA  
DIMENSIONS  
MM  
DIM  
INCHES  
NOTE  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=10us  
2
1
A
A
IFSM  
MIN  
MAX  
.152  
.112  
.071  
.053  
.031  
-----  
.01  
MIN  
3.55  
2.55  
1.40  
-----  
0.30  
0.15  
-----  
-----  
MAX  
3.85  
2.85  
1.80  
1.35  
.78  
-----  
.25  
.15  
A
B
C
D
E
G
H
J
.140  
.100  
.055  
-----  
.012  
.006  
-----  
-----  
Power Dissipation(Note 1)  
Thermal Resistance(Note 1)  
Operation/Storage Temp. Range  
Pd  
R
350  
315  
mW  
K/W  
oC  
Tj, TSTG  
-55 to +150  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
0.715  
0.855  
1
IF=1.0mA  
IF=10mA  
IF=50mA  
IF=150mA  
.006  
Maximum Forward  
Voltage Drop  
VFM  
V
SUGGESTED SOLDER  
PAD LAYOUT  
1.25  
0.093"  
Maximum Peak  
Reverse Current  
IRM  
1.0  
50  
uA VR=75V Tj=25oC  
uA VR=75V Tj=150oC  
0.048”  
Junction Capacitance  
Cj  
2
6
pF VR=0V, f=1.0MHz  
IF=IR=10mA, Irr=0.1IR,  
RL=100 OHM  
ns  
0.036”  
Reverse Recovery Time  
trr  
Note: 1. Valid provided that terminals are kept at ambient temperature  
www.cnelectr .com  
BAS16W  
Figure 2  
Typical Reverse Characteristics  
Figure 1  
Typical Forward Characteristics  
10  
TA = 85°C  
TA=150°C  
TA= 125°C  
100  
1
TA = -40°C  
10  
MilliAmps  
TA = 85°C  
TA = 55°C  
mA  
.1  
TA = 25°C  
1
.01  
TA = 25°C  
.1  
.001  
.2  
.4  
1.2  
.6  
.8  
1.0  
40  
50  
20  
60  
0
10  
30  
Volts  
Volts  
Instantaneous Forward Current - Amperesversus  
Instantaneous Forward Voltage - Volts  
Instantaneous Reverse Current - MicroAmperesversus  
Reverse Voltage - Volts  
Figure 3  
Diode Capacitance  
0.68  
0.64  
pF  
0.60  
0.56  
0.52  
0
2
4
6
8
Volts  
Diode Capacitance - pFversus  
Reverse Voltage - Volts  
www.cnelectr .com  

相关型号:

BAS16W,115

DIODE GEN PURP 100V 175MA SOT323
ETC

BAS16W,135

DIODE 0.175 A, 100 V, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN, Signal Diode
NXP

BAS16W-13

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES

BAS16W-7-F

SURFACE MOUNT FAST SWITCHING DIODE
WTE

BAS16W-7-F

SURFACE MOUNT FAST SWITCHING DIODE
DIODES

BAS16W-AU

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAS16W-Q

High-speed switching diodeProduction
NEXPERIA

BAS16W-T

DIODE 0.215 A, 85 V, SILICON, SIGNAL DIODE, Signal Diode
NXP

BAS16W-T1

SURFACE MOUNT FAST SWITCHING DIODE
WTE

BAS16W-T1-LF

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE

BAS16W-T3

SURFACE MOUNT FAST SWITCHING DIODE
WTE

BAS16W-TP

High Speed Switching Diode 350mW
MCC