DB6 [LUNSURE]
SILICON BIDIRECTIONAL DIAC; 硅双向DIAC
| 型号： | DB6 |
| 厂家： | 
Lunsure Electronic |
| 描述： | SILICON BIDIRECTIONAL DIAC |
| 文件： | 总2页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CE
CHENYI ELECTRONICS
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current,The breakover
symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are
intended for use in thyrisitors phase control, circuits for lamp dimming,universal
motor speed control, and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Parameters
Units
DB3 DC34 DB4 DB6
Power Dissipation on Printed
TA=50
150
mW
A
Pc
Circuit(L=10mm)
Repetitive Peak in-state
Current
tp=10u s
F=100Hz
2.0
2.0
2.0
1.6
ITRM
-40 to +125/-40 to 110
TSTG/TJ
Storage and Operating Junction Temperature
ELECTRCAL CHARACTERISTICS
Value
Symbols
Parameters
Test Conditions
Units
DB3 DC34 DB4
DB6
56
c=22nF(Note 2)
See diagram1
Min
Typ
Max
28
32
36
30
34
38
35
40
45
VBO
Breakover Voltage(Note 2)
Breakover Voltage Symmetry
V
60
70
|+VBO|-
|-VBO|
c=22nF(Note 2)
See diagram1
Max
Min
3
5
4
V
V
I=(IBO to IF=10mA)
See diagram1
Dynamic Breakover
Voltage(Note 1)
|
V|
10
Output Voltage(Note 1)
Breakover Current(Note 1)
Rise Time(Note 1)
5
Vo
IBO
tr
See diagram2
Min
Max
Typ
V
A
100
1.5
c=22nF(Note 2)
See Diagram 3
VB=0.5 VBO max
see diagram 1
S
A
IB
Leakage Current(Note 1)
Max
10
Notes: 1. Electrical characteristics applicable in both forward and reverse directions.
2. Connected in parallel with the devices.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE
CHENYI ELECTRONICS
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6
DIAGRAM 1: Current-voltage charateristics
DIAGRAM 2: Test circuit for output voltage
DIAGRAM 3: Test circuit see diagram2 adjust R for
Ip=0.5A
FIG.1-Power disspation versus ambient
temperature(maximum values)
FIG.2-Relative variation of VBO versus juntion
temperature(typical values)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 2
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