EGP10K [LUNSURE]
1.0Amp glass passivated high efficient rectifiers 50to800 volts; 1.0Amp玻璃钝化高效整流二极管50to800伏
| 型号： | EGP10K |
| 厂家： | 
Lunsure Electronic |
| 描述： | 1.0Amp glass passivated high efficient rectifiers 50to800 volts |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP10A
THRU
EGP10K
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
1.0 Amp Glass
Passivated High
Efficient Rectifiers
50 to 800 Volts
Features
·
·
·
·
Superfast recovery time for high efficiency
Glass passivated cavity-free junction, Plastic Case
Low forward voltage, high current capability
Low leakage current
Maximum Ratings
·
·
·
Operating Temperature: -55OC to +150OC
DO-41
Storage Temperature: -55OC to +150OC
Typical Thermal Resistance: 50OC/W Junction to Ambient
Maximum
Maximum DC
Blocking
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Part Number
Voltage
D
EGP10A
EGP10B
EGP10D
EGP10F
EGP10G
EGP10J
EGP10K
50V
35V
70V
50V
100V
200V
300V
400V
600V
800V
100V
200V
300V
400V
600V
800V
140V
210V
280V
420V
560V
A
Cathode
Mark
B
Electrical Characteristics @ 25OC Unless Otherwise Specified
D
Average Forward
IF(AV)
1.0 A
T = 55OC
A
Current
Peak Forward Surge
Current
8.3ms, half
sine
I
30A
FSM
C
Maximum
Instantaneous Forward
Voltage
IF=1.0A
A
EGP10A-10D
EGP10F-10G
EGP10J -10K
VF
0.95V
1.25V
1.70V
T =25OC
DIMENSIONS
INCHES
MIN
.166
.080
.028
MM
MIN
4.10
2.00
.70
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Maximum Reverse
Recovery Time
EGP10A-10G
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
NOTE
IR
5.0uA
100uA
T = 25OC
A
A
T = 125OC
1.000
25.40
---
IF=0.5A,
IR=1.0A,
IRR=0.25A
trr
50nS
75nS
EGP10J-10K
T=25OC
J
Typical Junction
Capacitance
Measured at
1.0MHz,
VR=4.0V
EGP10A-10D
EGP10F-10K
CJ
22pF
15pF
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EGP10A thru EGP10K
Figure 1
Typical For ward Characteristics
20
Figure 2
Forward Derating Curve
10
6
1.2
1.0
.8
4
25OC
2
1
.6
.4
Amps
150OC
.6
.4
.2
Amps
.2
.1
Resistive or Inductive Load
0.375”(9.5mm) Lead Length
.06
0
50
75
100
OC
125
150
175
.04
0
EGP10A -EGP10D
EGP10F-EGP10K
.02
.01
Average Forward Rectified Current - Amperes versus
Ambient Temperature - OC
.4
.6
.8
1.4
1.0
1.2
Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
TJ=25OC
40
20
pF
10
6
4
EGP10A -EGP10D
EGP10F
EGP10K
-
2
1
400
1000
.1
.2
.4
2
4
10 20
Volts
40
100 200
1
Junction Capacitance - pF versus
Reverse Voltage - Volts
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EGP10A thru EGP10K
Figure 4
Peak Forward Surge Current
60
50
40
30
Amps
20
10
0
1
2
4
6
8 10 20
Cycles
40 60 80100
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
Figure 5
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W
10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
1W
Oscilloscope
Note 1
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
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相关型号：
EGP10K-AP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
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EGP10K-BP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
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EGP10K-TP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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