KTC3199BL [LUNSURE]
Transistor;型号: | KTC3199BL |
厂家: | Lunsure Electronic |
描述: | Transistor |
文件: | 总3页 (文件大小:550K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
KTC3199
Features
·
·
·
·
High DC Current Gain: hFE=70~700
Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)
NPN General
Purpose Application
Low Noise: NF=1.0dB(Typ.), 10dB(Max.)
Complementary to KTA1267
Pin Configuration
Bottom View
C
B
E
TO-92S
A
E
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
50
50
5.0
150
Unit
V
V
V
mA
A
B
IE
Emitter Current
150
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
400
-55 to +150
-55 to +150
mW
OC
OC
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ Max
Units
OFF CHARACTERISTICS
ICBO
Collector-Base Cutoff Current
---
---
---
---
0.1
0.1
uAdc
uAdc
(VCB=50Vdc,I =0)
E
IEBO
Emitter-Base Cutoff Current
D
(VEB=5.0Vdc, I =0)
C
ON CHARACTERISTICS
(1)
hFE
VCE(sat)
fT
DC Current gain
70
---
80
---
---
700
0.25
---
---
Vdc
MHz
pF
(I =2.0mAdc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
C
0.1
---
(I =100mAdc, IB=10mAdc)
C
G
Transistor Frequency
(VCE=10Vdc, I =1.0mAdc)
C
Cob
Collector Output Capacitance
2.0
3.5
DIMENSIONS
(VCB=10Vdc, I =0, f=1.0MHz)
Noise Figure
E
INCHES
MM
NF
DIM
A
MIN
MAX
MIN
MAX
---
NOTE
(VCE=6.0Vdc, I =0.1mAdc, f=1.0kHz,
---
1.0
10
dB
.16
.12
4.00
3.00
C
B
Rg=10KOHM)
C
D
.59
---
15.00
(1) hFEClassification O: 70~140, Y: 120~240, GR: 200~400, BL: 300~700
.02
.08
.20
0.45
2.00
5.00
E
G
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KTC3199
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KTC3199
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