LL4448 [LUNSURE]
SMALL SIGNAL SWITCHING DIODE; 小信号开关二极管
| 型号： | LL4448 |
| 厂家： | 
Lunsure Electronic |
| 描述： | SMALL SIGNAL SWITCHING DIODE |
| 文件： | 总3页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CE
LL4448
SMALL SIGNAL SWITCHING DIODE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
Mini-MELF
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4448
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
VR
Value
Units
Volts
Volts
mA
Reverse voltage
75
Peak reverse voltage
VRM
100
Average rectified current, Half wave rectification with
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25
Power dissipation at TA=25
IAV
1501)
IFSM
Ptot
TJ
500
5001)
mW
mW
Junction temperature
175
Storage temperature range
T
STG
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max.
0.72
1
Units
V
Forward voltage at IF=5mA
at IF=10mA
VF
VF
IR
0.62
V
Leakage current at VR=20V
at VR=75V
25
5
nA
A
IR
at VR=20V, TJ=150
IR
50
4
A
Junction capacitance at VR=VF=0V
CJ
pF
V
Reverse breakdown voltage tested with 100 A pluse
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100
V(BR)R
100
4
trr
ns
Thermal resistance junction to ambient
Rectification efficience at f=100MHz,VRF=2V
R
JA
3501)
K/W
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
LL4448
SMALL SIGNAL SWITCHING DIODE
CHENYI ELECTRONICS
RATINGS AND CHATACTERISTIC CURVES LL4448
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG.4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
LL4448
SMALL SIGNAL SWITCHING DIODE
CHENYI ELECTRONICS
FIG.5-RECTIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
相关型号：
LL4448GS18
Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, DO-213AA, GLASS, MINIMELF-2
VISHAY
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