MBR10200CT [LUNSURE]
SCHOTTKY BARRIER RECTIFIER;
| 型号： | MBR10200CT |
| 厂家： | 
Lunsure Electronic |
| 描述： | SCHOTTKY BARRIER RECTIFIER IOT |
| 文件： | 总4页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MBR10150CT
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
10 Amp High Voltage
Power Schottky
Barrier Rectifier
150Volts
Features
·
·
High Junction Temperature Capability
Good Trade Off Between Leakage Current
And Forward Volage Drop
Low Leakage Current
·
Maximum Ratings
TO-220AB
·
·
Operating Junction Temperature : 150°C
Storage Temperature: - 50°C to +150°C
B
L
·
·
Per d iodeThermal Resistance 4°C/W Junction to Case
Total Thermal Resistance 2.4°C/W Junction to Case
M
C
D
Maximum
Re current
Peak Reverse
Voltage
Maximum Maximum
A
K
Catalog
Number
RMS
DC
E
F
PIN
Voltage
Blocking
Voltage
150V
MBR 10150 CT
150 V
105V
G
I
J
N
H
H
Electrical Characteristics @ 25°C Unless Otherwise Specified
PIN 1
PIN 3
PIN 2
CASE
Average Forward
Current
IF(AV)
10 A
TC = 155°C
Peak Forward Surge
Current
IFSM
120A
8.3ms half sine
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
ꢀ ꢀ ꢀ ꢀ
Maximum
INCHES
MM
ꢁꢂꢃ
A
B
C
D
E
F
G
H
I
ꢃꢂꢄ
.560
.380
.100
.230
.380
------
.500
.090
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
ꢃꢅꢆ
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
ꢄꢇꢈꢉ
Instantaneous
Forward Voltage
MBR10150CT
.625
.420
.135
.270
.420
.250
.580
.110
IFM = 5A
VF
.92V
.75V
TJ = 25°C
IFM = 5A
V
F
TJ = 125°C
.020
.012
.045
.025
J
K
.139
.161
3.53
4.09
L
M
.140
.045
.190
.055
3.56
1.14
4.83
1.40
N
.080
.115
2.03
2.92
Maximum
IR
50 µ A
7m A
TJ = 25°C
Reverse Current At
Rated DC Blocking
Voltage
TJ = 125°C
*Pulse Test: Pulse Width380msec, Duty Cycle 2%
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MBR10150CT
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
IF(av)(A)
5.0
6
δ = 0.2
δ = 0.5
δ = 0.1
Rth(j-a)=Rth(j-c)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
δ = 0.05
4
δ = 1
Rth(j-a)=15°C/W
3
2
T
T
1
Tamb(°C)
tp
=tp/T
IF(av) (A)
δ
tp
=tp/T
δ
0
0
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
80
70
60
0.8
δ = 0.5
50
0.6
Tc=50°C
40
Tc=75°C
δ = 0.2
0.4
30
δ = 0.1
T
20
Tc=125°C
IM
0.2
Single pulse
t
10
tp(s)
t(s)
δ=0.5
tp
=tp/T
δ
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
C(pF)
1E+5
200
F=1MHz
Tj=25°C
Tj=175°C
1E+4
Tj=150°C
100
50
1E+3
Tj=125°C
1E+2
Tj=75°C
1E+1
1E+0
Tj=25°C
20
1E-1
VR(V)
1E-2
VR(V)
10
0
25
50
75
100
125
150
1
2
5
10
20
50
100 200
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MBR10150CT
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
Tj=125°C
Typical values
60
50
40
30
20
10.0
Tj=125°C
Tj=25°C
1.0
10
VFM(V)
S(cm²)
0.1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
2
4
6
8
10 12 14 16 18 20
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Marking
1. Marking on the semiconductor ( laser marking or UV ink marking )
Logo
MBR10150CT
Terminal sign
Type Name
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