MMBR901 [LUNSURE]
Transistor;
Lunsure Electronic 
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMBR901
Description
NPN Silicon
High-Frequency
Transistor
·
·
·
·
·
High Current-Gain – Bandwidth Products
Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)
High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz
Operating & Storage Temperature: -55°C to +150°C
Marking Code: 7A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
15
Unit
Vdc
A
D
25
Vdc
Emitter-Base Voltage
2.0
30
Vdc
B
C
Collector Current - Continuous
Thermal Resistance, Junction to Case
Power Dissipation @ TC=75oC (1)
Derate above 75oC
mAdc
oC/W
R
250
JC
F
E
0.300
4.0
Watt
mW/oC
PD(max)
Electrical Characteristics @ 25oC Unless Otherwise Noted
H
G
J
Characteristics
Symbol
Min Max Unit
K
OFF CHARACTERISTICS
DIMENSIONS
MM
Collector-Emitter Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
25
Vdc
Vdc
INCHES
MIN
(IC = 1.0mAdc, IB = 0)
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
Collector-Base Breakdow n Voltage
(IC = 0.1mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1mAdc, IC = 0)
2.0
Vdc
F
G
H
J
.100
1.12
.180
.51
Collector Cutoff Current
50 NAdc
.085
.37
(VCB = 15 Vdc, IE = 0)
K
ON CHARACTERISTICS
DC Current Gain
Suggested Solder
Pad Layout
hFE
50
200
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
.031
.800
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
.035
.900
Cobo
Gpe
1.0
pF
dB
(VCB =10Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Common-Emitter Amplifier Gain
(VCC =6.0Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
.079
2.000
inches
mm
12
Note: 1. Case temperature measured on collector lead
.037
.950
.037
.950
immediately adjacent to body of package
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