LY61L1288UL [LYONTEK]
128K X 8 BIT HIGH SPEED CMOS SRAM; 128K ×8位高速CMOS SRAM型号: | LY61L1288UL |
厂家: | Lyontek Inc. |
描述: | 128K X 8 BIT HIGH SPEED CMOS SRAM |
文件: | 总11页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issue
Delete Icc1 Spec.
Added I Grade Spec.
Issue Date
Jul.25.2004
Sep.21.2004
Apr.20.2009
Revised Test Condition of ICC/ISB1/IDR
Revised VTERM to VT1 and VT2
FEATURES ORDERING INFORMATION
Revised
&
Lead free and green package available to Green package
available
ABSOLUTE MAXIMUN RATINGS
Deleted TSOLDER in
ORDERING INFORMATION
Added packing type in
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
FEATURES
GENERAL DESCRIPTION
The LY61L1288 is a 1,048,576-bit high speed
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
Fast access time : 8/10/12/15ns
Low power consumption:
Operating current : 80/75/70/65mA (TYP.)
Standby current : 0.6mA (TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY61L1288 is well designed for high speed
system application. Easy expansion is provided by
using an active LOW Chip Enable(CE#). The active
LOW Write Enable(WE#) controls both writing and
reading of the memory.
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 8mm x 13.4mm STSOP
The LY61L1288 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
Operating
Temperature
Power Dissipation
Speed
Vcc Range
Standby(ISB1,TYP.) Operating(Icc,TYP.)
0 ~ 70℃
0 ~ 70℃
LY61L1288
LY61L1288
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
8/10ns
12/15ns
8/10ns
0.6mA
0.6mA
0.6mA
0.6mA
0.6mA
0.6mA
80/75mA
70/65mA
80/75mA
70/65mA
80/75mA
70/65mA
-20 ~ 80℃
-20 ~ 80℃
-40 ~ 85℃
-40 ~ 85℃
LY61L1288(E)
LY61L1288(E)
LY61L1288(I)
LY61L1288(I)
12/15ns
8/10ns
12/15ns
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Vcc
Vss
A0 - A16
Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
128Kx8
A0-A16
DECODER
MEMORY ARRAY
CE#
WE#
OE#
VCC
Chip Enable Input
Write Enable Input
Output Enable Input
Power Supply
VSS
Ground
I/O DATA
CIRCUIT
DQ0-DQ7
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
PIN CONFIGURATION
A0
A1
1
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE#
DQ7
DQ6
Vss
Vcc
DQ5
DQ4
A12
A11
A10
A9
A2
3
A3
4
CE#
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
WE#
A4
5
6
7
8
LY61L1288
9
10
11
12
13
14
15
16
A5
A6
A7
A8
STSOP
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
VT1
RATING
-0.5 to 4.6
UNIT
V
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
VT2
-0.5 to VCC+0.5
V
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
℃
Operating Temperature
TA
℃
W
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
1
IOUT
50
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
CE#
OE#
WE#
SUPPLY CURRENT
MODE
I/O OPERATION
H
X
X
Standby
High-Z
ISB,ISB1
ICC
L
L
L
H
L
H
H
L
Output Disable
Read
High-Z
DOUT
DIN
ICC
X
Write
ICC
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
-8/-10
MIN.
3.15
3.0
2.0
- 0.3
- 1
TYP. *4
3.3
MAX.
3.6
3.6
VCC+0.5
0.8
UNIT
PARAMETER
Supply Voltage
V
V
V
V
VCC
-12/-15
3.3
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -4mA
VOL IOL = 8mA
2.4
-
-
-
V
V
-
-
-
-
-
-
0.4
150
120
100
90
10
3 *5
80
75
70
65
3
-8
mA
mA
mA
mA
mA
Cycle time = Min.
Average Operating
Power supply Current
-10
-12
-15
ICC
CE# = VIL , II/O = 0mA
Other pins at VIH or VIL
ISB
CE# = VIH, others at VIH or VIL
CE# ≧VCC - 0.2V,
Other pins at 0.2V or VCC-0.2V
Standby Power
Supply Current
ISB1
-
0.6
mA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
6
8
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0.2V to VCC - 0.2V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
UNIT
LY61L1288 LY61L1288 LY61L1288 LY61L1288
-8 -10 -12 -15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z tOLZ
Chip Disable to Output in High-Z tCHZ
Output Disable to Output in High-Z tOHZ
Output Hold from Address Change tOH
tRC
tAA
tACE
tOE
tCLZ
8
-
-
-
8
8
4
-
10
-
-
-
10
10
5
-
-
5
5
-
12
-
-
-
12
12
6
-
-
6
6
-
15
-
-
-
15
15
7
-
-
7
7
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
*
*
*
*
2
0
-
-
3
2
0
-
-
3
3
0
-
-
3
4
0
-
-
3
-
4
4
-
(2) WRITE CYCLE
PARAMETER
SYM.
UNIT
LY61L1288 LY61L1288 LY61L1288 LY61L1288
-8 -10 -12 -15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
8
6.5
6.5
0
6.5
0
5
0
1.5
-
-
-
-
-
-
-
-
-
-
10
8
8
0
8
0
6
0
2
-
-
-
-
-
-
-
-
-
-
12
10
10
0
9
0
7
0
3
-
-
-
-
-
-
-
-
-
-
15
12
12
0
10
0
8
0
4
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time tDH
Output Active from End of Write
Write to Output in High-Z
tAW
tCW
tAS
tWP
tWR
tDW
tOW
tWHZ
*
*
5
6
7
8
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
Dout
tAA
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
OE#
tOE
tOLZ
tOH
tOHZ
tCHZ
tCLZ
High-Z
Dout
High-Z
Data Valid
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
tAS
tWP
tWR
WE#
Dout
Din
tWHZ
TOW
High-Z
(4)
(4)
tDW
tDH
Data Valid
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tWP
WE#
Dout
Din
tWHZ
High-Z
(4)
tDW
tDH
Data Valid
Notes :
1.WE#, CE# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCC for Data Retention
VDR CE# ≧ VCC - 0.2V
2.0
-
3.6
V
VCC = 2.0V
Data Retention Current
IDR
CE# ≧ VCC - 0.2V
others at 0.2V or VCC - 0.2V
See Data Retention
Waveforms (below)
-
0.4
2
mA
Chip Disable to Data
Retention Time
Recovery Time
tCDR
tR
0
-
-
-
-
ns
ns
tRC
*
tRC = Read Cycle Time
*
DATA RETENTION WAVEFORM
VDR ≧ 2.0V
Vcc(min.)
Vcc
Vcc(min.)
tCDR
tR
VIH
CE# ≧ Vcc-0.2V
VIH
CE#
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
PACKAGE OUTLINE DIMENSION
32 pin 8mm x 13.4mm STSOP Package Outline Dimension
HD
c
L
12° (2x)
12° (2x)
32
1
17
16
"A"
y
Seating Plane
D
12° (2X)
16
17
GAUGE PLANE
0
SEATING PLANE
L
12° (2X)
L1
"A" DATAIL VIEW
1
32
UNIT
INCH(BASE)
0.049 (MAX)
MM(REF)
1.25 (MAX)
SYM.
A
A1
A2
b
±
±
0.005 0.002 0.130 0.05
±
±
0.039 0.002 1.00 0.05
±
±
0.008 0.01
0.20 0.025
c
0.005 (TYP)
0.127 (TYP)
D
±
±
0.465 0.004 11.80 0.10
E
±
±
0.315 0.004 8.00 0.10
e
0.020 (TYP) 0.50 (TYP)
HD
L
±
±
13.40 0.20.
0.528 0.008
±
±
0.0197 0.004 0.50 0.10
L1
y
Θ
±
±
0.0315 0.004 0.8 0.10
0.003 (MAX) 0.076 (MAX)
o
o
o
o
~
~
5
0
5
0
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
ORDERING INFORMATION
LY61L1288 U V - WW Y Z
Z : Packing Type
Blank : Tube or Tray
T : Tape Reel
Y : Temperature Range
Blank : (Commercial) 0°C ~ 70°C
E : (Extended) -20°C ~ +80°C
I : (Industrial) -40°C ~ +85°C
WW : Access Time(Speed)
V : Lead Information
L : Lead Free
U : Package Type
R : 32-pin 8 mm X 13.4 mm STSOP
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY61L1288
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
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