IT130A-P-DIP [Linear]
Small Signal Bipolar Transistor, 0.01A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC, DIP-8;型号: | IT130A-P-DIP |
厂家: | Linear |
描述: | Small Signal Bipolar Transistor, 0.01A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC, DIP-8 光电二极管 晶体管 |
文件: | 总2页 (文件大小:283K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IT130A IT130 IT131 IT132
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT130 Series
Pin for Pin Compatible
C1
C2
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
-10mA
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation TA=25°C
Linear Derating Factor
-65°C to +150°C
-55°C to +150°C
B1
E1 E2
26 X 29 MILS
B2
ONE SIDE
BOTH SIDES
500mW
TOP VIEW
250mW
2.3mW/°C
4.3W/°C
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC IT130A IT130 IT131 IT132
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
-45
-45
-6.2
±60
200
225
-0.5
-1
-45
-45
-45
-45
-45 MIN.
-45 MIN.
V
V
V
V
IC = -10µA IE = 0A
IC = -10µA IB = 0A
IE = -10µA IC = 0A NOTE 2
ICCO = ±10µA IB= IE=0A
IC = -10µA VCE = -5V
IC = -1.0mA VCE = -5V
IC = -0.5mA IB = -0.05mA
-6.2 -6.2 -6.2 MIN.
±60
200
225
±60
80
±60 MIN.
80 MIN.
100 MIN.
100
VCE(SAT) Collector Saturation Voltage
-0.5 -0.5 -0.5 MAX.
V
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Emitter Cutoff Current
-1
-1
2
-1
-1
2
-1
-1
2
MAX. nA
MAX. nA
MAX. pF
MAX. pF
IC = 0A
IE = 0A
IE = 0A
VCC = 0V
VEB = -3V
VCB = -45V
VCB = -5V
Collector Cutoff Current
Output Capacitance4
Collector to Collector Capacitance4
-1
2
4
4
4
4
Collector to Collector Leakage Current ±500 ±500 ±500 ±500 MAX. nA
Current Gain Bandwidth Product4
Narrow Band Noise Figure4
VCC = ±60V, IB= IE=0A
IC = -1mA VCE = -5V
IC = -100µA VCE = -5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
110
3
110
3
90
3
90
3
MIN. MHz
MAX. dB
NF
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
IT130A IT130 IT131 IT132
UNITS CONDITIONS
MAX. mV IC = -10 µA VCE = -5V
MAX. µV/°C IC = 10 µA VCE = 5V
│VBE1-VBE2
│
Base Emitter Voltage Differential
1
3
2
5
3
5
∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential
10
20
Change with Temperature4
T = -55°C to +125°C
IC = -10 µA VCE = -5V
│IB1-IB2│
Base Current Differential
2.5
5
25
25
MAX. nA
C1
B1
C2
B2
E2
0.210
0.170
E1
N/C
N/C
C2
B2
E2
C1
B1
E1
N/C
N/C
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
4. Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132
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