J112-TO-92-3L-ROHS [Linear]
Transistor,;
| 型号： | J112-TO-92-3L-ROHS |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J/SST111 SERIES
SINGLE N-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
4ns
FAST SWITCHING
J SERIES
SST SERIES
SOT-23
TOP VIEW
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
1
D
3
G
-55 to 150°C
-55 to 150°C
2
S
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)3
Continuous Power Dissipation (SST)3
Maximum Currents
360mW
350mW
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
-35V
Gate to Source
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
IG = -1µA, VDS = 0V
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
VGS(off) Gate to Source Cutoff Voltage
-35
-3
-35
-1
-35
2
-10
-1
-5
-1
-3
-1
VDS = 5V, ID = 1µA
V
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
Gate to Source Forward Voltage
Drain to Source Saturation Current2
Gate Leakage Current
0.7
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 15V, ID = 1.0mA
VDS = 5V, VGS = -10V
VGS = 0V, VDS = 0.1V
20
5
mA
nA
pA
nA
Ω
-0.005
-5
Gate Operating Current
Drain Cutoff Current
0.005
1
1
1
Drain to Source On Resistance
30
50
100
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20119 06/15/13 Rev# A5 ECN#J SST 111
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
Forward Transconductance
Output Conductance
6
mS
µS
VDS = 20V, ID = 1mA
f = 1kHz
gos
25
VGS = 0V, ID = 1mA
f = 1kHz
rds(on)
Drain to Source On Resistance
30
50
100
Ω
pF
Ciss
Crss
Input Capacitance
7
3
12
5
12
5
12
5
VDS = 0V, VGS = -10V
f = 1MHz
Reverse Transfer Capacitance
VDG = 10V, ID = 1mA
f = 1 kHz
nV/√Hz
en
Equivalent Noise Voltage
3
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT CONDITIONS
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
VGS(L)
RL
J/SST111 J/SST112 J/SST113
td(on)
tr
td(off)
tf
2
2
-12V
800Ω
12mA
-7V
1600Ω
6mA
-5V
3200Ω
3mA
Turn On Time
Turn Off Time
VDD = 10V
VGS(H) = 0V
ns
6
ID(on)
15
SWITCHING TEST CIRCUIT
SOT-23
VDD
0.89
1.03
0.37
0.51
1
3
2
RL
1.78
2.05
VGS(H)
2.80
3.04
OUT
VGS(L)
1.20
1.40
2.10
1k
51
51
0.89
1.12
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
3.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Derate 2.8mW/°C above 25°C.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20119 06/15/13 Rev# A5 ECN#J SST 111
相关型号：
J112/D10Z(OPTION5)
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
TI
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