LT1127AM [Linear]
Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps; 双核/四失低噪声，高速精密运算放大器
| 型号： | LT1127AM |
| 厂家： | 
Linear |
| 描述： | Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps |
| 文件： | 总8页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT1126/LT1127
Dual/Quad
Decompensated Low Noise,
High Speed Precision Op Amps
U
DESCRIPTIO
EATURE
S
F
■
100% Tested Low Voltage Noise
2.7nV/√Hz Typ
The LT1126 dual and LT1127 quad are high performance,
decompensated op amps that offer higher slew rate and
bandwidth than the LT1124 dual and the LT1125 quad
operational amplifiers. The enhanced AC performance is
available without degrading DC specs of the LT1124/
LT1125. Both LT1126/LT1127 are stable in a gain of 10 or
more.
4.2nV/√Hz Max
11V/µs Typ
65MHz Typ
70µV Max
■
■
■
Slew Rate
Gain-Bandwidth Product
Offset Voltage, Prime Grade
Low Grade
100µV Max
5 Million Min
3.1mA Max
112dB Min
116dB Min
■
■
■
■
■
High Voltage Gain
Supply Current Per Amplifier
Common Mode Rejection
Power Supply Rejection
Available in 8-Pin SO Package
In the design, processing, and testing of the device,
particularattentionhasbeenpaidtotheoptimizationofthe
entire distribution of several key parameters. Slew rate,
gain-bandwidth, and 1kHz noise are 100% tested for each
individual amplifier. Consequently, the specifications of
eventhelowestcostgrades(theLT1126CandtheLT1127C)
have been enhanced.
O U
PPLICATI
S
A
■
■
■
■
■
■
■
■
■
■
Two and Three Op Amp Instrumentation Amplifiers
Low Noise Signal Processing
Active Filters
Microvolt Accuracy Threshold Detection
Strain Gauge Amplifiers
Direct Coupled Audio Gain Stages
Tape Head Preamplifiers
Microphone Preamplifiers
Accelerometer Amplifiers
Infrared Detectors
Power consumption of the dual LT1126 is less than one
halfoftwoOP-37s.Lowpowerandhighperformanceinan
8-pin SO package makes the LT1126 a first choice for
surface mounted systems and where board space is
restricted.
Protected by U.S. patents 4,775,884 and 4,837,496.
Low Noise, Wide Bandwidth Instrumentation Amplifier
Voltage Noise vs Frequency
– INPUT
+
620Ω
10k
1/4
100
LT1127
–
V
T
= ±15V
= 25°C
S
A
6.2k
30
200Ω
10
3
–
MAXIMUM
TYPICAL
1/4
LT1127
6.2k
–
OUTPUT
620Ω
1/4
LT1127
+
1/f CORNER
2.3Hz
+ INPUT
+
10k
1
0.1
1.0
10
FREQUENCY (Hz)
100
1000
GAIN = 1000, BANDWIDTH = 480kHz
INPUT REFERRED NOISE = 4.5nV/ Hz AT 1kHz, 6µV
LT1126 • TA01
LT1126 • TA07
OVER BANDWIDTH
√
RMS
1
LT1126/LT1127
W W W
U
ABSOLUTE AXI U RATI GS
Supply Voltage ..................................................... ±22V
Input Voltage ............................ Equal to Supply Voltage
Output Short Circuit Duration .......................... Indefinite
Differential Input Current (Note 5) ......................±25mA
Lead Temperature (Soldering, 10 sec.)................. 300°C
Operating Temperature Range
LT1126AM/LT1126M
LT1127AM/LT1127M ........................ –55°C to 125°C
LT1126AC/LT1126C
LT1127AC/LT1127C ............................ –40°C to 85°C
Storage Temperature Range
All Grades ......................................... –65°C to 150°C
W
U
/O
PACKAGE RDER I FOR ATIO
TOP VIEW
ORDER PART
NUMBER
ORDER PART
TOP VIEW
1
2
3
4
8
7
6
5
–IN A
+IN A
NUMBER
+
OUT A
–IN A
+IN A
1
2
3
4
8
7
6
5
V
–
A
B
OUT A
V
OUT B
+
LT1126CS8
+IN B
–IN B
LT1126AMJ8
LT1126MJ8
LT1126CJ8
LT1126ACN8
LT1126CN8
V
A
–IN B
+IN B
OUT B
B
–
V
S8 PACKAGE
8-LEAD PLASTIC SOIC
S8 PART
MARKING
J8 PACKAGE
N8 PACKAGE
8-LEAD CERAMIC DIP 8-LEAD PLASTIC DIP
NOTE: THIS PIN CONFIGURATION DIFFERS FROM THE
8-PIN DIP CONFIGURATION. INSTEAD, IT FOLLOWS
THE INDUSTRY STANDARD LT1013DS8 SO PACKAGE
LT1126 • POI02
1126
PIN LOCATIONS
LT1126 • POI01
TOP VIEW
TOP VIEW
1
2
3
4
5
6
7
8
16 OUT D
15
OUT A
–IN A
+IN A
LT1127AMJ
LT1127MJ
LT1127CJ
LT1127ACN
LT1127CN
LT1127CS
OUT A
–IN A
+IN A
1
2
3
4
5
6
7
14 OUT D
13 –IN D
–IN D
D
C
A
B
D
C
A
B
14 +IN D
–
12
11
10
9
+IN D
+
13
12
11
V
V
–
+
V
V
+IN C
–IN C
+IN B
–IN B
+IN B
–IN B
+IN C
–IN C
OUT C
10 OUT C
NC
OUT B
NC
OUT B
8
9
J PACKAGE
N PACKAGE
S PACKAGE
16-LEAD PLASTIC SOL
14-LEAD CERAMIC DIP 14-LEAD PLASTIC DIP
LT1126 • POI04
LT1126 • POI03
E
LECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted.
LT1126AM/AC
LT1127AM/AC
LT1126M/C
LT1127M/C
SYMBOL
PARAMETER
CONDITIONS (Note 1)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
OS
Input Offset Voltage
LT1126
LT1127
20
25
70
90
25
30
100
140
µV
µV
∆V
∆Time
Long Term Input Offset
Voltage Stability
0.3
0.3
µV/Mo
OS
I
Input Offset Current
LT1126
LT1127
5
6
15
20
6
7
20
30
nA
nA
OS
I
e
Input Bias Current
Input Noise Voltage
± 7
70
± 20
200
± 8
70
± 30
nA
nVp-p
B
0.1Hz to 10Hz (Notes 7 and 8)
n
2
LT1126/LT1127
V = ±15V, T = 25°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
S
A
LT1126AM/AC
LT1127AM/AC
LT1126M/C
LT1127M/C
SYMBOL
PARAMETER
CONDITIONS (Note 1)
f = 10Hz (Note 3)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
Input Noise Voltage Density
3.0
2.7
5.5
4.2
3.0
2.7
5.5
4.2
nV/√Hz
nV/√Hz
O
f = 1000Hz (Note 2)
O
i
Input Noise Current Density
f = 10Hz
f = 1000Hz
O
1.3
0.3
1.3
0.3
pA/√Hz
pA/√Hz
V
n
O
V
Input Voltage Range
± 12.0 ± 12.8
± 12.0 ± 12.8
CM
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
V
= ±12V
112
116
5.0
126
126
17.0
4.0
106
110
3.0
124
124
15.0
3.0
dB
dB
CM
V = ±4V to ±18V
S
A
VOL
R ≥ 10kΩ, V = ±10V
R ≥ 2kΩ, V = ±10V
R ≥ 2kΩ
R ≥ 2kΩ (Notes 2 and 6)
V/µV
V/µV
V
V/µs
MHz
Ω
L
O
2.0
1.5
L
O
V
OUT
Maximum Output Voltage Swing
Slew Rate
Gain-Bandwidth Product
Open Loop Output Resistance
Supply Current Per Amplifier
Channel Separation
± 13.0 ± 13.8
8.0
45
± 12.5 ± 13.8
8.0
45
L
SR
GBW
11
65
75
2.6
150
11
65
75
2.6
150
L
f = 10kHz (Note 2)
O
Z
O
V = 0, I = 0
O
O
I
3.1
3.1
mA
dB
S
f ≤ 10Hz (Note 8)
V = ±10V, R = 2kΩ
134
130
O
L
V = ±15V, −55°C ≤ T ≤ 125°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
S
A
LT1126AM
LT1127AM
LT1126M
LT1127M
TYP
60
70
0.4
SYMBOL
PARAMETER
CONDITIONS (Note 1)
LT1126
MIN
TYP
MAX
MIN
MAX
250
290
1.5
UNITS
µV
µV
µV/°C
V
Input Offset Voltage
●
●
50
55
0.3
170
190
1.0
OS
LT1127
∆V
∆Temp
Average Input Offset Voltage Drift
Input Offset Current
(Note 4)
●
OS
I
LT1126
LT1127
●
●
18
18
45
55
20
20
60
70
nA
nA
OS
I
V
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
●
●
●
●
± 18 ± 55
± 11.3 ± 12
± 20 ± 70
± 11.3 ± 12
nA
V
dB
dB
V/µV
V/µV
V
V/µs
mA
B
CM
CMRR
PSRR
A
V
= ±11.3V
106
110
3.0
122
100
104
2.0
120
CM
V = ±4V to ±18V
R ≥ 10kΩ, V = ±10V
R ≥ 2kΩ, V = ±10V
R ≥ 2kΩ
122
10.0
3.0
120
10.0
2.0
S
●
●
VOL
L
O
1.0
0.7
L
O
V
SR
I
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
●
●
●
± 12.5 ± 13.6
± 12.0 ± 13.6
OUT
L
R ≥ 2kΩ (Notes 2 and 6)
7.2
10
7.0
10
L
2.8
3.5
2.8
3.5
S
Note 6: Slew rate is measured in A = –10; input signal is ±1V, output
The denotes the specifications which apply over the full operating
temperature range.
V
•
measured at ±5V.
Note 7: 0.1Hz to 10Hz noise can be inferred from the 10Hz noise voltage
density test. See the test circuit and frequency response curve for 0.1Hz to
10Hz tester in the Applications Information section of the LT1007 or
LT1028 datasheets.
Note 1: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers; i.e., out of 100 LT1127s (or 100
LT1126s) typically 240 op amps (or 120) will be better than the indicated
specification.
Note 2: This parameter is 100% tested for each individual amplifier.
Note 3: This parameter is sample tested only.
Note 8: This parameter is guaranteed but not tested.
Note 9: The LT1126 and LT1127 are not tested and are not quality
assurance sampled at –40°C and at 85°C. These specifications are
guaranteed by design, correlation and/or inference from –55°C, 0°C, 25°C,
70°C and/or 125°C tests.
Note 4: This parameter is not 100% tested.
Note 5: The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds ±1.4V, the input current should be limited to 25mA.
3
LT1126/LT1127
ELECTRICAL CHARACTERISTICS V = ±15V, 0°C ≤ T ≤ 70°C, unless otherwise noted.
S
A
LT1126AC
LT1127AC
LT1126C
LT1127C
TYP
SYMBOL
PARAMETER
CONDITIONS (Note 1)
MIN TYP
MAX
MIN
MAX
UNITS
V
Input Offset Voltage
LT1126
LT1127
●
●
35
40
120
140
45
50
170
210
µV
µV
OS
∆V /∆T
Average Input Offset Voltage Drift
Input Offset Current
(Note 4)
LT1126
LT1127
●
0.3
6
7
1.0
25
35
0.4
7
8
1.5
35
45
µV/°C
OS
I
●
●
nA
nA
OS
I
V
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
●
●
●
●
± 8
± 11.5 ± 12.4
± 35
± 9
± 11.5 ± 12.4
± 45
nA
V
dB
dB
V/µV
V/µV
B
CM
CMRR
PSRR
A
V
= ±11.5V
109
112
125
125
102
107
122
122
CM
V = ±4V to ±18V
R ≥ 10kΩ, V = ±10V
R ≥ 2kΩ, V = ±10V
S
●
●
4.0
1.5
15.0
3.5
2.5
1.0
14.0
2.5
VOL
L
L
O
O
V
SR
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
R ≥ 2kΩ
R ≥ 2kΩ (Notes 2 and 6)
L
●
●
●
± 12.5 ± 13.7
± 12.0 ± 13.7
V
V/µs
mA
OUT
L
7.5
10.5
2.7
7.3
10.5
2.7
I
3.3
3.3
S
ELECTRICAL CHARACTERISTICS VS = ±15V, −40°C ≤ TA ≤ 85°C, unless otherwise noted. (Note 9)
LT1126AC
LT1127AC
TYP
LT1126C
LT1127C
TYP
SYMBOL
PARAMETER
CONDITIONS (Note 1)
MIN
MAX
MIN
MAX
UNITS
V
OS
Input Offset Voltage
LT1126
LT1127
●
●
40
45
140
160
50
55
200
240
µV
µV
∆V /∆T
Average Input Offset Voltage Drift
Input Offset Current
●
0.3
15
15
1.0
40
50
0.4
17
17
1.5
55
65
µV/°C
OS
I
LT1126
LT1127
●
●
nA
nA
OS
I
V
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
●
●
●
●
± 15 ± 50
± 11.4 ± 12.2
± 17 ± 65
± 11.4 ± 12.2
nA
V
dB
dB
V/µV
V/µV
B
CM
CMRR
PSRR
A
V
= ±11.4V
107
111
124
124
101
106
121
121
CM
V = ±4V to ±18V
R ≥ 10kΩ, V = ±10V
R ≥ 2kΩ, V = ±10V
S
●
●
3.5
1.2
12.0
3.2
2.2
0.8
12.0
2.3
VOL
L
L
O
O
V
SR
Maximum Output Voltage Swing
Slew Rate
Supply Current Per Amplifier
R ≥ 2kΩ
R ≥ 2kΩ (Note 6)
L
●
●
●
± 12.5 ± 13.6
± 12.0 ± 13.6
V
V/µs
mA
OUT
L
7.3
10.2
2.8
7.1
10.2
2.8
I
3.4
3.4
S
U W
TYPICAL PERFOR A CE CHARACTERISTICS
The typical behavior of many LT1126/LT1127 parameters
is identical to the LT1124/LT1125. Please refer to the
LT1124/LT1125 data sheet for the following performance
characteristics:
Input Bias Current Over the Common Mode Range
Voltage Gain vs Temperature
Input Offset Voltage Drift Distribution
Offset Voltage Drift with Temperature of Representative
Units
0.1Hz to 10Hz Voltage Noise
0.01Hz to 1Hz Voltage Noise
Current Noise vs Frequency
Input Bias or Offset Current vs Temperature
Output Short Circuit Current vs Time
Output Voltage Swing vs Load Current
Common Mode Limit vs Temperature
Channel Separation vs Frequency
Warm-Up Drift
Power Supply Rejection Ratio vs Frequency
4
LT1126/LT1127
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Gain, Phase Shift vs Frequency
Small-Signal Transient Response
Large-Signal Transient Response
50
40
60
80
V
= ±15V
= 25°C
= 10pF
S
10V
Ø
T
50mV
A
C
L
30
20
100
120
0V
0mV
– 10V
GAIN
–50mV
10
0
140
160
180
LT1126 • TPC02
LT1126 • TPC03
AVCL = –10V
A
VCL = –10V
VS = ±15V OR ±5V
VS = ±15V
C
L = 15pF
–10
0.1
1.0
10
100
FREQUENCY (MHz)
LT1126 • TPC01
Common Mode Rejection Ratio vs
Frequency
Voltage Gain vs Frequency
Supply Current vs Supply Voltage
3
2
1
0
160
140
120
100
80
180
160
140
120
100
80
125°C
V
T
= ±15V
T
V
V
= 25°C
= ±15V
= ±10V
S
A
A
S
CM
= 25°C
25°C
–55°C
60
60
40
40
20
20
0
–20
0
0
±5
±10
±15
±20
0.01
1
100
10k
1M
100M
1k
10k
100k
FREQUENCY (Hz)
1M
10M
SUPPLY VOLTAGE (V)
FREQUENCY (Hz)
LT1126 • TPC05
LT1126 • TPC06A
LT1126 • TPC04
Total Harmonic Distortion
Total Harmonic Distortion
and Noise vs Frequency for
Inverting Gain
and Noise vs Frequency for
Non-Inverting Gain
Intermodulation Distortion
(CCIF Method)* vs Frequency
0.1
0.010
0.1
0.1
0.010
Z
V
A
= 2k/15pF
= 20Vp-p
= +10, +100
Z
V
A
= 2k/15pF
= 20Vp-p
= –10, –100
Z
= 2k/15pF
L
O
V
L
O
V
L
f (IM) = 1kHz
= 13.5kHz
f
V
A
O
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
= 20Vp-p
= –10
O
V
0.010
0.001
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
A
= +100
V
A
= –100
V
0.001
0.001
A
= –10
V
A
= +10
V
LT1126
0.0001
0.0001
0.0001
20
100
1k
FREQUENCY (Hz)
10k 20k
20
100
1k
FREQUENCY (Hz)
10k 20k
3k
10k
20k
FREQUENCY (Hz)
LT1126 • TPC08
LT1126 • TPC07
LT1126 • TPC09
*See LT1115 data sheet for definition of CCIF testing
5
LT1126/LT1127
O U
W
U
PPLICATI
A
S I FOR ATIO
Matching Specifications
High Speed Operation
In many applications the performance of a system de-
pends on the matching between two op amps, rather than
the individual characteristics of the two devices. The three
op amp instrumentation amplifier configuration shown in
thisdatasheetisanexample. Matchingcharacteristicsare
not 100% tested on the LT1126/LT1127.
When the feedback around the op amp is resistive (RF), a
pole will be created with RF, the source resistance and
capacitance (RS, CS), and the amplifier input capacitance
(CIN ≈ 2pF). In low closed loop gain configurations and
with RS and RF in the kilohm range, this pole can create
excess phase shift and even oscillation. A small capacitor
(CF) in parallel with RF eliminates this problem. With
RS (CS + CIN) = RF CF, the effect of the feedback pole is
completely removed.
Some specifications are guaranteed by definition. For
example, 70µV maximum offset voltage implies that mis-
match cannot be more than 140µV. 112dB (= 2.5µV/V)
CMRR means that worst case CMRR match is 106dB
(5µV/V). However, the following table can be used to
estimate the expected matching performance between the
two sides of the LT1126, and between amplifiers A and D,
and between amplifiers B and C of the LT1127.
C
F
R
F
–
+
C
OUTPUT
IN
R
C
S
S
LT1126 • TA02
Expected Match
LT1126AM/AC
LT1127AM/AC
LT1126M/C
LT1127M/C
PARAMETER
Match, ∆V
50% YIELD
98% YIELD
50% YIELD
98% YIELD
UNITS
V
LT1126
LT1127
20
30
110
150
30
50
130
180
µV
µV
OS
OS
Temperature Coefficient Match
Average Non-Inverting I
0.35
6
1.0
18
0.5
7
1.5
25
µV/°C
nA
B
Match of Non-Inverting I
CMRR Match
PSRR Match
7
126
127
22
115
118
8
123
127
30
112
114
nA
dB
dB
B
U
O
TYPICAL APPLICATI S
Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz
Gain Error vs Frequency
Closed Loop Gain = 1000
1.0
20k
TRIM
340k
1%
15k
5%
TYPICAL
PRECISION
OP AMP
365Ω
1%
+15V
0.1
0.01
–
+
LT1126
OUTPUT
RN60C FILM RESISTORS
LT1126/LT1127
INPUT
–15V
THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1126/LT1127 IS USEFUL IN LOW FREQUENCY HIGH CLOSED
LOOP GAIN AMPLIFIER APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN LOOP GAIN OF ONE
MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1%
AMPLIFYING ACCURACY UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY AT A FASTER
CLOSED LOOP GAIN
OPEN LOOP GAIN
GAIN ERROR =
0.001
0.1
1
10
100
RATE. THE LT1126/LT1127 “GAIN PRECISION — BANDWIDTH PRODUCT” IS 330 TIMES HIGHER, AS SHOWN.
LT1126 • TA03
FREQUENCY (Hz)
LT1126 • TA04
6
LT1126/LT1127
U
O
TYPICAL APPLICATI S
Low Noise, Wideband, Gain = 100 Amplifier with High Input Impedance
1.1k
120
120
120
–
+
500Ω
2.4k
2.4k
7.5k
1/4
LT1127
1.1k
–
+
1/4
LT1127
OUTPUT
–
+
1/4
LT1127
INPUT
1.1k
2.4k
–3dB BANDWIDTH = 910 kHz
GAIN BANDWIDTH PRODUCT = 91.0MHz
–
+
1/4
LT1127
3.2nV/√Hz
WIDEBAND NOISE =
= 1.85nV/√Hz REFERRED TO INPUT
√3
RMS NOISE DC TO FULL BANDWIDTH = 21.2µV REFERRED TO INPUT
LT1126 • TA05
W
W
SCHE ATIC DIAGRA (1/2 LT1126, 1/4 LT1127)
+
V
360µA
570µA
100µA
Q7
Q28
20
200pF
21k
21k
3.6k
3.6k
5pF
Q27
Q18
Q9
Q3
Q25
OUTPUT
Q17
Q10
Q8
Q26
Q19
Q20
20
–
V
NON-INVERTING
INPUT (+)
Q2A
Q1A Q1B
400
Q30
Q2B
67pF
20pF
+
V
Q13
INVERTING
INPUT (–)
Q29
+
V
Q22
Q11
Q23
6k
Q12 Q15
Q16
Q24
200µA
200µA
100µA
200
6k
200
50
–
V
LT1126 • TA06
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LT1126/LT1127
U
PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted.
0.405
(10.287)
0.200
(5.080)
MAX
0.005
(0.127)
MIN
MAX
0.290 – 0.320
(7.366 – 8.128)
J8 Package
6
5
8
7
8-Lead Ceramic DIP
0.015 – 0.060
(0.381 – 1.524)
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
TJ MAX
θJA
0.008 – 0.018
(0.203 – 0.460)
160°C
100°C/W
0° – 15°
1
2
3
4
0.038 – 0.068
(0.965 – 1.727)
0.385 ± 0.025
(9.779 ± 0.635)
0.055
(1.397)
MAX
0.125
3.175
MIN
0.014 – 0.026
0.100 ± 0.010
(0.360 – 0.660)
(2.540 ± 0.254)
J8 1291
0.300 – 0.320
(7.620 – 8.128)
0.130 ± 0.005
(3.302 ± 0.127)
0.400
(10.160)
MAX
0.045 – 0.065
(1.143 – 1.651)
N8 Package
8-Lead Plastic DIP
0.065
(1.651)
TYP
8
1
7
6
5
4
0.009 - 0.015
(0.229 - 0.381)
TJ MAX
θJA
0.250 ± 0.010
(6.350 ± 0.254)
0.125
(3.175)
MIN
0.020
(0.508)
MIN
140°C
130°C/W
+0.025
–0.015
0.045 ± 0.015
(1.143 ± 0.381)
0.325
+0.635
8.255
(
)
3
2
–0.381
0.100 ± 0.010
(2.540 ± 0.254)
0.018 ± 0.003
(0.457 ± 0.076)
N8 1291
0.189 – 0.197
(4.801 – 5.004)
S8 Package
8
7
6
5
0.010 – 0.020
(0.254 – 0.508)
× 45°
8-Lead Plastic SOIC
0.053 – 0.069
(1.346 – 1.753)
0.008 – 0.010
(0.203 – 0.254)
0.004 – 0.010
(0.102 – 0.254)
0.228 – 0.244
(5.791 – 6.198)
TJ MAX
θJA
0.150 – 0.157
(3.810 – 3.988)
140°C
190°C/W
0.016 – 0.050
0.406 – 1.270
0.050
(1.270)
BSC
0.014 – 0.019
(0.356 – 0.483)
0°– 8° TYP
1
2
3
4
S8 1291
0.785
0.200
(5.080)
MAX
0.290 – 0.320
(7.366 – 8.128)
(19.939)
MAX
0.005
(0.127)
MIN
J Package
14-Lead Ceramic DIP
14
13
12
11
10
9
6
8
7
0.220 – 0.310
(5.588 – 7.874)
0.025
(0.635)
RAD TYP
TJ MAX
θJA
0.008 – 0.018
(0.203 – 0.460)
0° – 15°
0.015 – 0.060
(0.381 – 1.524)
160°C
80°C/W
0.385 ± 0.025
(9.779 ± 0.635)
0.038 – 0.068
(0.965 – 1.727)
0.100 ± 0.010
(2.540 ± 0.254)
2
3
4
5
1
0.125
(3.175)
MIN
0.098
(2.489)
MAX
0.014 – 0.026
(0.360 – 0.660)
J14 1291
0.065
0.770
(19.558)
MAX
(1.651)
TYP
0.300 – 0.325
(7.620 – 8.255)
0.045 – 0.065
(1.143 – 1.651)
0.015
(0.380)
MIN
N Package
14
13
12
11
10
9
6
8
7
0.130 ± 0.005
14-Lead Plastic DIP
(3.302 ± 0.127)
0.260 ± 0.010
(6.604 ± 0.254)
0.009 - 0.015
(0.229 - 0.381)
TJ MAX
θJA
+0.025
–0.015
140°C
110°C/W
0.325
0.075 ± 0.015
(1.905 ± 0.381)
0.018 ± 0.003
(0.457 ± 0.076)
0.125
(3.175)
MIN
1
2
3
5
4
+0.635
8.255
(
)
–0.381
0.100 ± 0.010
(2.540 ± 0.254)
N14 1291
0.398 – 0.413
(10.109 – 10.490)
(NOTE 2)
0.291 – 0.299
(7.391 – 7.595)
(NOTE 2)
0.037 – 0.045
(0.940 – 1.143)
0.093 – 0.104
(2.362 – 2.642)
15 14
12
10
9
16
13
11
0.005
(0.127)
RAD MIN
0.010 – 0.029
× 45°
(0.254 – 0.737)
SOL Package
16-Lead Plastic SOL
0° – 8° TYP
0.050
(1.270)
TYP
0.394 – 0.419
(10.007 – 10.643)
NOTE 1
TJ MAX
θJA
0.004 – 0.012
(0.102 – 0.305)
0.009 – 0.013
(0.229 – 0.330)
NOTE 1
0.014 – 0.019
140°C
130°C/W
0.016 – 0.050
(0.356 – 0.482)
TYP
(0.406 – 1.270)
NOTE:
1. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS.
THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS.
2. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm).
2
3
5
7
8
1
4
6
BA/GP 0192 10K REV 0
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7487
8
●
●
(408) 432-1900 FAX: (408) 434-0507 TELEX: 499-3977
LINEAR TECHNOLOGY CORPORATION 1992
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