LTC1163 [Linear]
Triple 1.8V to 6V High-Side MOSFET Drivers; 三重1.8V至6V的高边MOSFET驱动器型号: | LTC1163 |
厂家: | Linear |
描述: | Triple 1.8V to 6V High-Side MOSFET Drivers |
文件: | 总8页 (文件大小:233K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC1163/LTC1165
Triple 1.8V to 6V High-Side
MOSFET Drivers
U
DESCRIPTIO
EATURE
S
F
■
■
■
■
■
■
■
■
■
■
Operates from 1.8V to 6V
The LTC1163/LTC1165 triple low voltage MOSFET drivers
make it possible to switch supply or ground referenced
loadsthroughinexpensive,lowRDS(ON) N-channelswitches
from as little as a 1.8V supply. The LTC1165 has inverting
inputs and makes it possible to directly replace P-channel
MOSFET switches while maintaining system drive polar-
ity. The LTC1163 has noninverting inputs.
0.01µA Standby Current
95µA Operating Current per Channel at 3.3V
Fully Enhances N-Channel Switches
No External Charge Pump Components
Built-In Gate Voltage Clamps
Easily Protected Against Supply Transients
Controlled Switching ON and OFF Times
Compatible with 5V, 3V and Sub-3V Logic Families
Available in 8-Pin SOIC
Micropower operation, with 0.01µA standby current and
95µA operating current, coupled with a power supply
range of 1.8V to 6V, make the LTC1163/LTC1165 ideally
suited for 2- to 4-cell battery-powered applications. The
LTC1163/LTC1165 are also well suited for sub-3V, 3.3V
and 5V nominal supply applications.
O U
PPLICATI
A
S
■
■
■
■
■
■
■
■
PCMCIA Card 3.3V/5V Switch
2-Cell High-Side Load Switching
Boost Regulator Shutdown to Zero Standby Current
Replacing P-Channel Switches
Notebook Computer Power Management
Palmtop Computer Power Management
Portable Medical Equipment
The LTC1163/LTC1165 internal charge pumps boost the
gatevoltage8Vabovea3.3Vrail, fullyenhancing inexpen-
sive N-channels for high- or low-side switch applications.
The LTC1163/LTC1165 are available in both an 8-pin DIP
and an 8-pin SOIC.
Mixed 3.3V and 5V Supply Switching
U
O
TYPICAL APPLICATI
2-Cell Triple High-Side Switch
MOSFET Switch Gate Voltage
(1.8V TO 3V)
18
16
14
+
+
2-CELL
BATTERY
PACK
10µF
RFD14N05LSM RFD14N05LSM RFD14N05LSM
12
10
8
V
S
IN1
IN2
IN3
OUT1
OUT2
OUT3
CONTROL
LTC1163
LTC1165
LOGIC
OR µP
GND
6
2-CELL
LOAD
2-CELL
LOAD
2-CELL
LOAD
4
LTC1163 HAS NONINVERTING INPUTS
LTC1165 HAS INVERTING INPUTS
2
0
LTC1163/65 • TA01
0
1
2
5
6
3
4
SUPPLY VOLTAGE (V)
LTC1163/65 • TA02
1
LTC1163/LTC1165
W W W
U
ABSOLUTE AXI U RATI GS
Supply Voltage ......................................................... 7V
Any Input Voltage .......................... 7V to (GND – 0.3V)
Any Output Voltage....................... 20V to (GND – 0.3V)
Current (Any Pin)................................................. 50mA
Operating Temperature Range
LTC1163C/LTC1165C ........................... 0°C to 70°C
Storage Temperature Range ................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
W
U
/O
PACKAGE RDER I FOR ATIO
ORDER PART
ORDER PART
TOP VIEW
TOP VIEW
NUMBER
NUMBER
IN1
IN2
1
2
3
4
8
7
6
5
V
S
IN1
IN2
1
2
3
4
V
S
8
7
6
5
LTC1163CS8
LTC1165CS8
OUT1
OUT2
OUT3
OUT1
OUT2
OUT3
LTC1163CN8
LTC1165CN8
IN3
IN3
GND
GND
S8 PART MARKING
N8 PACKAGE
8-LEAD PLASTIC DIP
S8 PACKAGE
8-LEAD PLASTIC SOIC
1163
1165
TJMAX = 100°C, θJA = 150°C/W
TJMAX = 100°C, θJA = 130°C/W
VS = 1.8V to 6V, TA = 25°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
LTC1163C/LTC1165C
SYMBOL
PARAMETER
CONDITIONS
V = 1.8V, V = V = V = V (Note 1,2)
MIN
TYP
MAX
UNITS
I
Quiescent Current OFF
0.01
0.01
0.01
1
1
1
µA
µA
µA
Q
S
IN1
IN2
IN3
OFF
V = 3.3V, V = V = V = V (Note 1,2)
S
IN1
IN2
IN3
OFF
V = 5V, V = V = V = V (Note 1,2)
S
IN1
IN2
IN3
OFF
Quiescent Current ON
Input High Voltage
V = 1.8V, V = V (Note 2,3)
60
95
180
120
200
400
µA
µA
µA
S
IN
ON
V = 3.3V, V = V (Note 2,3)
S
IN
ON
V = 5V, V = V (Note 2,3)
S
IN
ON
V
V
1.8V < V < 2.7V
●
●
80% × V
70% × V
V
V
INH
S
S
S
2.7V < V < 6V
S
Input Low Voltage
Input Current
1.8V < V < 6V
●
●
15% × V
±1
V
µA
pF
INL
S
S
I
0V ≤ V ≤ V
IN S
IN
C
V
Input Capacitance
Gate Voltage Above Supply
5
IN
– V
V = 1.8V, V = V (Note 2)
●
●
●
●
●
3.5
4.0
4.5
6.0
5.0
4.1
4.6
5.2
8.0
9.0
6.0
7.0
8.0
9.5
13.0
V
V
V
V
V
GATE
S
S
IN
ON
V = 2V, V = V (Note 2)
S
IN
ON
V = 2.2V, V = V (Note 2)
S
IN
ON
V = 3.3V, V = V (Note 2)
S
IN
ON
V = 5V, V = V (Note 2)
S
IN
ON
t
Turn-ON Time
V = 3.3V, C
Time for V
Time for V
= 1000pF
ON
S
GATE
GATE
GATE
> V + 1V
40
60
120
180
400
600
µs
µs
S
> V + 2V
S
V = 5V, C
Time for V
Time for V
= 1000pF
S
GATE
> V + 1V
30
40
95
130
300
400
µs
µs
GATE
GATE
S
> V + 2V
S
2
LTC1163/LTC1165
ELECTRICAL CHARACTERISTICS VS = 1.8V to 6V, TA = 25°C, unless otherwise noted.
LTC1163C/LTC1165C
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
t
Turn-OFF Time
V = 3.3V, C
Time for V
= 1000pF
< 0.5V
OFF
S
GATE
GATE
20
15
65
200
150
µs
V = 5V, C
= 1000pF
< 0.5V
S
GATE
Time for V
45
µs
GATE
The
●
denotes specifications which apply over the full operating
Note 2: LTC1163: V = 0V, V = V . LTC1165: V = V , V = 0V
OFF ON S OFF S ON
temperature range.
Note 3: Quiescent current ON is per driver and is measured independently.
Note 1: Quiescent current OFF is for all channels in OFF condition.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Standby Supply Current
Supply Current per Driver ON
Gate Voltage Above Supply
5
4
600
500
400
300
200
100
0
12
10
8
T
= 25°C
T
= 25°C
A
T
= 25°C
A
A
ALL THREE INPUTS = OFF
ONE INPUT = ON
OTHER INPUTS = OFF
3
2
6
1
4
0
2
–1
0
0
2
3
4
5
6
1
0
2
3
4
5
6
0
2
3
4
5
6
1
1
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
LTC1163/65 • TPC01
LTC1163/65 • TPC02
LTC1163/65 • TPC03
Turn-OFF Time
Input Threshold Voltage
Turn-ON Time
6
5
4
3
2
1
0
600
500
400
300
200
100
0
300
250
200
150
100
50
C
= 1000pF
T
= 25°C
C
= 1000pF
GATE
TIME FOR V
A
GATE
< 0.5V
GATE
V
HI
V
= 2V
GS
V
LO
V
= 1V
GS
4
0
0
2
3
4
5
6
0
2
3
5
6
0
2
3
4
5
6
1
1
1
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
LTC1163/65 • TPC04
LTC1163/65 • TPC05
LTC1163/65 • TA06
3
LTC1163/LTC1165
TYPICAL PERFOR A CE CHARACTERISTICS
U W
Standby Supply Current
Supply Current per Driver ON
MOSFET Gate Drive Current
5
4
1000
100
10
300
250
200
150
100
50
T
A
= 25°C
3
V
= 5V
S
V
S
= 5V
2
V
S
= 3.3V
V
= 3.3V
= 1.8V
S
S
1
1
V
0
V
= 1.8V
V = 2.2V
S
S
–1
0
0.1
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
2
4
6
8
10
TEMPERATURE (°C)
TEMPERATURE (°C)
GATE VOLTAGE ABOVE SUPPLY (V)
LTC1163/65 • TPC07
LTC1163/65 • TPC08
LTC1163/65 • TPC09
U U
U
PI FU CTIO S
Input Pins
Output Pins
The LTC1163 is noninverting; i.e., the MOSFET gate is
driven above the supply when the input pin is held high.
TheLTC1165isinvertinganddrivestheMOSFETgatehigh
when the input pin is held low. The inverting inputs of the
LTC1165 allow P-channel switches to be replaced by
lower resistance/cost N-channel switches while maintain-
ing system drive polarity.
The output pin is either driven to ground when the switch
is turned OFF or driven above the supply rail when the
switch is turned ON. The output is clamped to about 14V
above ground by a built-in Zener clamp. This pin has a
relatively high impedance when driven above the rail (the
equivalent of a few hundred kΩ). Care should be taken to
minimize any loading of this pin by parasitic resistance to
ground or supply.
The LTC1163/LTC1165 logic inputs are high impedance
CMOS gates with ESD protection diodes to ground and
therefore should not be forced below ground. The inputs
can however, be driven above the power supply rail as
therearenoclampingdiodesconnectedbetweentheinput
pins and supply pin. This facilitates operation in mixed
5V/3V systems.
Supply Pin
A 150Ω resistor should be inserted in series with the
ground pin or supply pin if negative supply voltage tran-
sients are anticipated. This will limit the current flowing
from the power source into the LTC1163/LTC1165 to tens
of milliamps during reverse battery conditions.
U
OPERATIO
The input threshold voltage is set at roughly 50% of the
supply voltage and approximately 200mV of input hyster-
esis is provided to ensure clean switching.
The LTC1163/LTC1165 are triple micropower MOSFET
drivers designed for operation over the 1.8V to 6V supply
range and include the following functional blocks:
The input enables all of the following circuit blocks: the
bias generator, the high frequency oscillator and gate
charge pump. Therefore, when the input is turned off, the
entire circuit powers down and the supply current drops
below 1µA.
3V Logic Compatible Inputs
The LTC1163/LTC1165 inputs have been designed to
accommodate a wide range of 3V and 5V logic families.
4
LTC1163/LTC1165
U
OPERATIO
Gate Charge Pump
Controlled Gate Rise and Fall Times
Gate drive for the power MOSFET is produced by an
internal charge pump circuit which generates a gate volt-
age substantially higher than the power supply voltage.
The charge pump capacitors are included on chip and
thereforenoexternalcomponentsarerequiredtogenerate
gate drive.
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions.
W
BLOCK DIAGRA
(One Channel)
LTC1165
LTC1163
HIGH
FREQUENCY
OSCILLATOR
CHARGE
GATE
PUMP
GATE
DISCHARGE
BIAS
GENERATOR
INPUT
LOGIC
14V
LTC1163/65 • BD
U U
W
U
APPLICATIO S I FOR ATIO
Logic-Level MOSFET Switches
For example, if a 100µF capacitor is powered through a
switchwithaslewrateof0.1V/µs, thecurrentduringstart-
up is:
The LTC1163/LTC1165 are designed to operate with
logic-level N-channel MOSFET switches. Although there
is some variation among manufacturers, logic-level
MOSFET switches are typically rated with VGS = 4V with
a maximum continuous VGS rating of ±10V. RDS(ON) and
maximum VDS ratings are similar to standard MOSFETs
and there is generally little price differential. Logic-level
MOSFETs are frequently designated by an “L” and are
usually available in surface mount packaging. Some
logic-level MOSFETs are rated with VGS up to ±15V and
can be used in applications which require operation over
the entire 1.8V to 6V range.
ISTART = C(∆V/∆t)
= (100 × 10–6)(1 × 105)
= 10A
Obviously, this is too much current for the regulator (or
output capacitor) to supply and the output will glitch by as
much as a few volts.
The startup current can be substantially reduced by limit-
ing the slew rate at the gate of an N-channel as shown in
Figure 1. The gate drive output of the LTC1163/LTC1165
is passed through a simple RC network, R1 and C1, which
substantially slows the slew rate of the MOSFET gate to
approximately 1.5 × 10–4V/µs. Since the MOSFET is
operating as a source follower, the slew rate at the source
is essentially the same as that at the gate, reducing the
startup current to approximately 15mA which is easily
Powering Large Capacitive Loads
Electrical subsystems in portable battery-powered equip-
ment are typically bypassed with large filter capacitors to
reduce supply transients and supply induced glitching. If
not properly powered however, these capacitors may
themselves become the source of supply glitching.
5
LTC1163/LTC1165
U U
W
U
APPLICATIO S I FOR ATIO
3.3V
on a 3.3V supply which is compatible with 5V TTL and
CMOS logic. (The LTC1163/LTC1165 cannot however, be
driven by 3V logic when powered from a 5V supply
because the threshold is approximately 2.5V.)
LT1129-3.3
V
IN
+
3.3µF
R1
100k
R2
1k
V
S
OUT1
MTD3055EL
3.3V
C1
0.1µF
1/3 LTC1163
GND
+
ON/OFF
IN1
C
L
100µF
V
3.3V
LOAD
S
5V
OUT1
MTD3055EL
1/3 LTC1163
LTC1163/65 • F01
IN1
3.3V
LOAD
GND
Figure 1. Powering a Large Capacitive Load
LTC1163/65 • F01
managed by the system regulator. R2 is required to
eliminate the possibility of parasitic MOSFET oscillations
duringswitchtransitions.Itisagoodpracticetoisolatethe
gates of paralleled MOSFETs with 1k resistors to decrease
the possibility of interaction between switches.
Figure 2. Direct Interface to 5V Logic
Reverse Battery Protection
The LTC1163/LTC1165 can be protected against reverse
battery conditions by connecting a 150Ω resistor in series
with the ground pin or supply pin. The resistor limits the
supply current to less than 24mA with –3.6V applied.
Because the LTC1163/LTC1165 draw very little current
while in normal operation, the drop across the resistor is
minimal.The3.3VµP(orcontrollogic)canbeprotectedby
adding 10k resistors in series with the input pins.
Mixed 5V/3V Systems
BecausetheinputESDprotectiondiodesarereferencedto
ground instead of the supply pin, it is possible to drive the
LTC1163/LTC1165 inputs from 5V CMOS or TTL logic
even though the LTC1163/LTC1165 are powered from a
3.3V supply as shown in Figure 2. The input threshold
voltageisapproximately50%ofthesupplyvoltageor1.6V
U
TYPICAL APPLICATIO S
PCMCIA Card 3.3V/5V VCC Switch
5V
+
10µF
PCMCIA
CONTROLLER
1/2 MMDF3N02HD
V
V
CC
S
V
5V
3V
IN1
OUT1
OUT2
OUT3
CC
CC
+
LTC1165
PC
1µF
V
IN2
IN3
CARD
SOCKET
MMDF3N02HD
GND
LTC1163/65 • TA03
3.3V
NOTE: USE LTC1163 WITH NONINVERTING PCMCIA CONTROLLERS
6
LTC1163/LTC1165
U
TYPICAL APPLICATIO S
2-Cell to 3.3V, 5V and 12V High-Side Switch/Converter
with 0.01µA Standby Current
+
+
2-CELL
BATTERY
PACK
100µF
6.3V
V
S
IN1
IN2
IN3
OUT1
OUT2
OUT3
RFD14N05LSM
CONTROL
LOGIC
OR µP
LTC1163
LTC1165
RFD14N05LSM
RFD14N05LSM
GND
MBRS120T3
100µH
3.3V
22µH
MBRS120T3
22µH
47Ω
MBRS120T3
12V
5V
1
3
1
3
1
2
3
39k
7
8
7
8
8
LT1109CS8-12
4
LT1109CS8-5
4
LT1173CS8
+
+
+
10µF
20V
22µF
16V
220µF
6.3V
24k
4
5
LTC1163/65 • TA04
PCMCIA Card Socket VPP Switch/Reglator
MMDF3N02HD
MURS120T3
1
3
33µH
7,8
V
= 3.3V
OR 5V
V
= 0V, 3.3V,
CC
PP
5V, 12V, OR HI-Z
+
3
1M
100µF
6.3V
1/4 74HC02
1
8
LT1109ACS8-12
1N4148
EN0
1N4148
2
4
5,6
EN0
EN1 OUTPUT
7
+
0
1
0
1
0
0
1
1
0V
47µF
16V
12V
4
V
CC
V
S
HI-Z
1/4 74HC02
IN1
OUT1
OUT2
OUT3
LTC1163
1/4 74HC02
IN2
IN3
2N7002
EN1
GND
LTC1163/65 • TA05
Ultra-Low Drop Triple 3.3V High-Side Switch
3.3V
+
MTD
3055EL
MTD
3055EL
MTD
3055EL
10µF
V
S
(11V)
(11V)
(11V)
IN1
IN2
IN3
OUT1
OUT2
OUT3
3.3V
LOGIC
OR µP
LTC1163
LTC1165
GND
3.3V
LOAD
3.3V
LOAD
3.3V
LOAD
LTC1163/65 • TA06
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LTC1163/LTC1165
U
O
TYPICAL APPLICATI S
Mixed Voltage High- and Low-Side Switches
3.3V
12V
5V
+
+
+
Si9956DY
10µF
10µF
10µF
V
S
12V
IN1
IN2
IN3
OUT1
OUT2
OUT3
LOAD
5V
LOGIC
OR µP
LTC1163
LTC1165
IRFR024
GND
5V
LOAD
3.3V
LOAD
LTC1163/65 • TA07
3-Cell to 3.3V Ultra-Low Drop Regulator with 2 Ramped Switches
+
+
3-CELL
BATTERY
PACK
10µF
MTD3055EL
3.3V
OUTPUT
MTD3055EL
1k
MTD3055EL
1k
1
3
V
S
+
220µF
6.3V
IN1
IN2
IN3
OUT1
OUT2
OUT3
510pF
3.3k
10k
CONTROL
LTC1163
LTC1165
LOGIC
LT1431
5
OR µP
8
GND
3.3V
3.3V
LOAD
6
100k 100k
LOAD
680Ω
0.1µF
0.1µF
LTC1163/65 • TA08
U
Dimensions in inches (millimeters) unless otherwise noted.
PACKAGE DESCRIPTIO
0.400
(10.160)
MAX
0.130 ± 0.005
0.045 – 0.065
0.300 – 0.320
(7.620 – 8.128)
(3.302 ± 0.127)
(1.143 – 1.651)
N8 Package
8
7
6
5
4
8-Lead
0.065
(1.651)
TYP
Plastic DIP
0.250 ± 0.010
(6.350 ± 0.254)
0.009 – 0.015
(0.229 – 0.381)
0.125
(3.175)
MIN
0.020
(0.508)
MIN
+0.025
–0.015
0.045 ± 0.015
(1.143 ± 0.381)
1
8
2
0.325
3
+0.635
8.255
(
)
–0.381
0.100 ± 0.010
(2.540 ± 0.254)
0.018 ± 0.003
(0.457 ± 0.076)
0.189 – 0.197
(4.801 – 5.004)
7
5
6
0.010 – 0.020
(0.254 – 0.508)
× 45°
0.053 – 0.069
(1.346 – 1.752)
S8 Package
8-Lead
Plastic SOIC
0.004 – 0.010
(0.101 – 0.254) 0.228 – 0.244
(5.791 – 6.197)
0.008 – 0.010
(0.203 – 0.254)
0.150 – 0.157
(3.810 – 3.988)
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
0.050
0.014 – 0.019
(0.355 – 0.483)
(1.270)
BSC
1
2
3
4
LT/GP 1093 10K REV 0 • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1993
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7487
8
●
●
(408) 432-1900 FAX: (408) 434-0507 TELEX: 499-3977
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IC SWITCHED CAPACITOR FILTER, PIN PROGRAMMABLE, LOWPASS, CDIP14, 0.300 INCH, LEAD FREE, CERAMIC, DIP-14, Active Filter
Linear
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