LTC1340 [Linear]
Low Noise, Voltage-Boosted Varactor Driver; 低噪声，电压升压变容二极管驱动器
| 型号： | LTC1340 |
| 厂家： | 
Linear |
| 描述： | Low Noise, Voltage-Boosted Varactor Driver |
| 文件： | 总8页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC1340
Low Noise, Voltage-Boosted
Varactor Driver
U
FEATURES
DESCRIPTION
TheLTC®1340isavaractordiodedriverdesignedtogenerate
5V varactor drive from a single 3V or higher voltage supply.
It includes a low noise amplifier with an internal gain of 2.3
and a self-contained charge pump to generate output volt-
ages above the input supply. The amplifier input stage
includesabuilt-inoffsetvoltagethatallowstheoutputvoltage
to swing to ground without requiring OV on the input. This
featuremaintains thephasedetectorwithinits linearrangeof
operation. The LTC1340 requires only three external surface
mount capacitors to implement a complete varactor driver
module.
■
Generates 5V Varactor Drive from a 3V Supply
■
Wide Supply Voltage Range: 2.7V to 6V
■
Requires Only Three External Components
■
Micropower Operation: 400µA at 3V Supply
■
Shutdown Mode Drops Supply Current Below 1µA
Low Output Noise: 15µVRMS
Amplifier Gain: 2.3
■
■
■
■
■
■
Up to 500kHz Signal Bandwidth
MS8 and SO-8 Packages
Very Low Input Bias Current: 10nA Max
Amplifier Offset Maintains Phase Detector
in Linear Region
The LTC1340 features output referred noise of 15µVRMS
,
minimizing frequency deviation in PLL frequency synthe-
sizer systems. Supply current is 400µA typically with a 3V
supply,anddropsto1µAinshutdown,maximizingoperating
lifeinbattery-poweredsystems.Amplifierbandwidthisuser-
adjustable from 10kHz up to 500kHz and the output typically
sinks or sources 20µA, allowing fast output signal changes
with a typical varactor load. The amplifier input features rail-
to-rail input common mode range, allowing it
to interface with the output of virtually any phase detector
circuit.
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APPLICATIONS
■
5V Varactor Drive from a Single Li-Ion Cell
5V Varactor Drive from Three NiCd/NiMH Cells
Cellular Telephones
Portable RF Equipment
■
■
■
■
Radio Modems
■
Wireless Data Transmission
The LTC1340 is available in MS8 and SO-8 packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATION
Spectral Plot of VCO Output Driven by LTC1340
Resolution Bandwidth = 300Hz
Low Voltage Frequency Synthesizer
3V
0dB
1
8
2
0.1µF
0.1µF
V
CC
CP
LTC1340
AV
CC
VCO
0V TO 5V
OUT
7
5
IN
PHASE
DETECTOR
A
V
= 2.3
270pF
LOOP
FILTER
SHDN PGND AGND
4
3
6
1340 TA01
SHUTDOWN
900MHz
FREQUENCY (120kHz/DIV)
1340 TA02
1
LTC1340
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ABSOLUTE MAXIMUM RATINGS
Supply Voltage (VCC) ................................................. 7V
Input Voltage (AVCC) ............................................... 14V
Input Voltage (SHDN, IN) ............... –0.3V to VCC + 0.3V
Output Voltage (CP, OUT)............ –0.3V to AVCC + 0.3V
Output Short-Circuit Duration .......................... Indefinite
Commercial Temperature Range ................. 0°C to 70°C
Extended Commercial Operating
Temperature Range (Note 1) ............. –40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
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PACKAGE/ORDER INFORMATION
TOP VIEW
ORDER PART
ORDER PART
TOP VIEW
NUMBER
NUMBER
CP
1
2
3
4
8
7
6
5
AV
CC
CP
1
2
3
4
8 AV
CC
V
CC
7 OUT
6 AGND
5 IN
V
CC
OUT
AGND
IN
SHDN
LTC1340CS8
LTC1340CMS8
SHDN
PGND
PGND
MS8 PACKAGE
8-LEAD PLASTIC MSOP
MS8 PART MARKING
LTBM
S8 PART MARKING
1340
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 125°C, θJA = 200°C/ W
TJMAX = 125°C, θJA = 130°C/ W
Consult factory for Industrial and Military grade parts.
T = 25°C, unless otherwise noted. (Note 1)
A
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
Input Supply Voltage
Supply Current
●
2.7
6
V
CC
I
I
= 0, 2.7V ≤ V ≤ 6V
●
●
500
1
900
10
µA
µA
CC
OUT
CC
Shutdown, 2.7V ≤ V ≤ 6V
CC
V
Low Output Voltage Swing
High Output Voltage Swing
V
V
= 2.7V, 6V,
= 2.7V, 6V,
I = 0µA
OUT
●
●
0.25
0.6
V
V
OL
OH
CC
CC
I
= 14µA
OUT
V
V
CC
V
CC
V
CC
V
CC
= 2.7V,
= 6V,
= 2.7V,
= 6V,
I
= 0µA
OUT
●
●
●
●
4.6
10.5
4.25
9.75
±14
V
V
V
V
I
= 0µA
= 14µA
= 14µA
OUT
I
OUT
OUT
I
I
t
Output Sink/Source Current
0.6V ≤ V
0.6V ≤ V
≤ 4.25V, V = 2.7V
≤ 9.75V, V = 6V
●
●
±20
±20
±35
±35
µA
µA
OUT
OUT
OUT
OUT
CC
±14
CC
Output Transition Time
Input Voltage Range
Input Bias Current
C
OUT
= 1nF, ∆V
= ±4V
OUT
●
●
200
285
µs
V
IN
0
V
CC
V
I
0.1V ≤ V ≤ V
CC
±0.01
±1
±10
nA
nA
B
IN
●
●
●
V
OS
Input Offset Voltage
Amplifier Gain
0.15
2.1
0.35
2.3
0.60
2.5
V
A
V
V
IN
= 1V, AV = 5V
V/V
CC
g
m
Amplifier Transconductance
V
OUT
V
OUT
= 2.5V, AV = 5V
1200
800
1800
2300
3200
µmho
µmho
CC
= 2.5V, AV = 5V
●
CC
R
Output Impedance
V
= 1/2AV
CC
1
15
MΩ
OUT
OUT
e
n
Output Noise Voltage
1kHz to 100kHz, C
= 1nF
= 1nF
25
µV
RMS
OUT
BW
–3dB Signal Bandwidth
Power Supply Rejection Ratio
Shutdown Logic Input Current
C
OUT
= 1nF
125
90
kHz
PSRR
AV = 4V to 6V, C
●
60
dB
CC
OUT
I
0.1V ≤ V
≤ V
CC
±0.01
±1
µA
SHDN
SHDN
2
LTC1340
TA = 25°C, unless otherwise noted. (Note 1)
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
1.2
200
4
MAX
UNITS
t
Charge Pump Start-Up Time
Charge Pump Output Ripple at C
Charge Pump Frequency
C
C
= 0.1µF, V = 2.7V, I = 0
OUT
●
●
5
ms
START
CP
CP
CC
V
= C
= 0.1µF, V = 2.7V, I
= 0 (Note 2)
µV
P-P
RIPPLE
P
VCC
CC
OUT
f
(Note 3)
2.5
MHz
CP
The
range.
●
denotes specifications which apply over the specified temperature
Note 2: The charge pump output ripple is not tested but is correlated with
a PCB ground plane and high quality, low ESR, low ESL metalized
polyester 0.1µF capacitors.
Note 3: The internal oscillator typically runs at 2MHz, but the charge pump
refreshes the output on both phases of the clock, resulting in an effective
4MHz operating frequency.
Note 1: C grade device specifications are guaranteed over the 0°C to 70°C
temperature range. In addition, C grade device specifications are assured
over the –40°C to 85°C temperature range by design or correlation, but
are not production tested.
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TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage vs
Temperature
Gain and Phase Shift vs
DC Transfer Curve
Frequency
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
12
11
10
9
20
10
180
144
108
72
V
= 6V
CC
GAIN
V
C
V
= 2.7V TO 6V
= 1nF
T
= 25°C
CC
OUT
A
C
I
= 1nF
OUT
0
= V
= 0
SHDN
CC
OUT
V
= V
V
= 5V
SHDN
CC
–10
–20
–30
–40
–50
–60
–70
–80
–90
CC
8
36
7
0
6
PHASE
V
= 2.7V
–36
–72
–108
–144
–180
–216
CC
5
4
3
V
T
= 2.7V
CC
A
2
= 25°C
1
C
= 1nF
OUT
0
0
2
3
4
5
6
1
1
10
100
1000
–50 –25
25
50
75
100 125
0
INPUT VOLTAGE (V)
FREQUENCY (kHz)
TEMPERATURE (°C)
1340 G01
1340 G03
1340 G02
Output High Voltage vs
Temperature
Transconductance vs
Supply Voltage
Output Low Voltage vs
Temperature
9.4
9.3
9.2
9.1
9.0
8.9
4.9
4.8
4.7
4.6
4.5
4.4
0.5
0.4
0.3
0.2
0.1
0
2100
2050
2000
1950
1900
1850
1800
V
C
V
V
= 2.7V OR 5V
= 1nF
T
V
V
= 25°C
CC
OUT
IN
A
I
= 0, V = 5V
CC
OH
= 1/2AV
OUT
CC
= 0V
= V
SHDN
CC
I
= 14µA, V = 5V
CC
OH
= V
CC
SHDN
I
= 14µA
OL
C
V
= 1nF
SHDN
OUT
IN
= V
= V
CC
I
= 0, V = 2.7V
CC
OH
I
= 0
OL
I
= 14µA, V = 2.7V
CC
OH
5.0 5.5 6.0
2.5 3.0 3.5 4.0 4.5
6.5
–50 –25
0
25
50
75
100 125
–50 –25
0
25
50
75
100 125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
TEMPERATURE (°C)
1340 G04
1340 G06
1340 G05
3
LTC1340
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TYPICAL PERFORMANCE CHARACTERISTICS
Transconductance vs
Temperature
Supply Current vs Supply Voltage
Supply Current vs Temperature
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
900
800
700
600
500
400
300
200
700
650
600
550
500
450
400
350
300
V
V
= 1/2AV
= V
V
= V
CC
T
= 25°C
SHDN
OUT
SHDN
CC
SHDN
A
V
= V
CC
CC
V
= 6V
= 5V
CC
CC
V
= 6V
CC
V
V
= 5V
CC
V
= 2.7V
CC
V
CC
= 2.7V
–50 –25
0
25
50
75
100 125
5.0 5.5 6.0
2.5 3.0 3.5 4.0 4.5
6.5
–50 –25
25
50
75
100 125
0
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
1340 G07
1340 G08
1340 G09
GSM 900 MS Spectrum Due to
Modulation
Output Voltage Noise vs
Temperature
Input Bias Current vs
Temperature
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.50
5.0
10000
1000
100
10
10
0
V
= V = V = 5V
SHDN CC
AV = 5V
CC
IN
C
OUT
= 1nF
MEASUREMENT
BANDWIDTH
100kHz
–10
–20
–30
–40
–50
–60
MEASUREMENT
BANDWIDTH
30kHz
DATA TAKEN ON
LTC DEMO BOARD DC152
–66
–70
LTC1340
1.50
0
–80
–90
1
–50 –25
0
25
50
75
100 125
–50 –25
25
50
75
100 125
0
0
1200
3000 6000
1800
200 400 600
TEMPERATURE (°C)
TEMPERATURE (°C)
FREQUENCY FROM THE CARRIER(kHz)
1340 G12
1340 G11
1340 G10
Rail-to-Rail Step Response at
VCC = 2.7V
Shutdown Input Threshold vs
Temperature
Rail-to-Rail Step Response at
CC = 6V
V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 6V
= 5V
= 4V
CC
V
V
V
CC
CC
CC
= 3V
0V
0V
V
= 2.7V
CC
VIN = 0.3V TO 2.6V
VIN = 0.3V TO 6V
OUT = 1nF
COUT = 1nF
1340 G15
C
1340 G14
–50 –25
25
50
75
100 125
0
TEMPERATURE (°C)
1340 G13
4
LTC1340
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TYPICAL PERFORMANCE CHARACTERISTICS
Charge Pump Frequency vs
Temperature
Small-Signal Response
Large-Signal Response
4.0
3.8
3.6
3.4
3.2
3.0
V
= V
CC
SHDN
C
OUT = 0pF
V
= 6V
CC
COUT = 220pF
COUT = 470pF
V
CC
= 5V
V
CC
= 2.7V
0V
COUT = 1nF
VIN = 0.5V TO 2V
1340 G18
V
CC = 2.7V
COUT = 1nF
1340 G17
–50 –25
0
25
50
75
100 125
TEMPERATURE (°C)
1340 G16
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PIN FUNCTIONS
CP (Pin 1): Charge Pump Output. This is the output of the
internalchargepump. ThevoltageatCPisnominallytwice
the VCC input voltage. Connect CP to an external 0.1µF
filter capacitor and AVCC.
IN (Pin 5): Signal Input. The internal amplifier amplifies
the signal input at this pin typically by 2.3 to the OUT pin.
IN accepts signals from GND to VCC without phase rever-
salorunusualbehavior,allowingadirectconnectiontothe
output of virtually any phase detector or loop filter pow-
ered from VCC.
VCC (Pin 2): Supply Input. This is the input supply to the
charge pump. VCC can range from 2.7V to 6V and requires
a 0.1µF bypass capacitor to PGND.
AGND (Pin 6): Signal Ground. Connect AGND to the
ground plane in close proximity to the VCO ground. There
is an internal parasitic resistance of 50Ω between AGND
and PGND.
SHDN (Pin 3) Shutdown. If SHDN is high (>VCC – 0.5V),
the LTC1340 operates normally. If SHDN is pulled low
(<0.5V), the LTC1340 enters shutdown mode and the
supply current drops to less than 1µA typically. In shut-
down, the charge pump output voltage collapses and the
OUT pin enters a high impedance state. If SHDN returns
high, the charge pump output requires 1.2ms typically to
resume full voltage.
OUT (Pin 7): Driver Output. OUT is the output of the
internal gm amplifier and the internal feedback network. It
swings from GND to AVCC, and drives a varactor load
directly. The OUT pin requires an external capacitor
(≥ 220pF) to AGND to ensure stability. OUT typically sinks
or sources 20µA.
PGND (Pin 4): Power Ground. This is the charge pump
ground. Connect PGND to the system power supply
return.
AVCC (Pin 8): Amplifier Supply. LTC recommends a direct
connectionfromAVCC toCPandalsorecommendsa0.1µF
filter capacitor from CP to PGND.
5
LTC1340
W
BLOCK DIAGRAM
C
CP
AV
0.1µF
CP
CC
(EXTERNAL)
47.9pF
1.5M
LTC1340
PGND
DOUBLER
CHARGE
PUMP WITH
INTERNAL
FLYING
V
CC
–
+
0.1µF
OUT
±20µA
SHDN
1.15M
62.3pF
CAPACITOR
C
OUT
V
+
S
(EXTERNAL)
0.62V
–
50Ω
AGND
1340 BD
PGND
IN
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APPLICATIONS INFORMATION
tionallowsittoreplaceseveralpowersupplyandregulator
components in a typical PLL synthesizer. This results in
significant space and complexity savings.
Overview
The LTC1340 is a monolithic IC that combines a charge
pumpandalownoiseamplifiertoprovidea0Vto5Vswing
to drive a varactor diode-based PLL system from a single
3V supply. Traditional PLL frequency synthesizers used in
cellularphonesandotherportableRFsystemsusevaractor
diodes as the voltage variable element in the VCO. Typical
varactordiodesrequireatleast4Vofcontrolvoltageswing
toobtaintheirfullrangeofcapacitanceadjustment. Newer
battery-powered systems, operating from low voltage
power supplies, have trouble providing this bias voltage
without an additional step-up circuit.
Charge Pump
The LTC1340 features a self-contained doubling charge
pump with internal flying capacitors. The charge pump
refreshes the output on each phase of the internal 2MHz
clock, giving an effective 4MHz switching frequency. An
external 0.1µF capacitor at the CP pin acts as a charge
reservoir and provides filtering to minimize clock
feedthrough to the amplifier section. The CP pin can be
connected directly to the amplifier power supply at AVCC.
Inaddition,itcanbefilteredwithanRCorLCnetworkprior
to its connection to AVCC. The LTC1340 minimizes inter-
actionbetweenthechargepumpandtheamplifierthrough
careful internal shielding.
The LTC1340 design provides a 5V signal swing suitable
for biasing such a varactor diode when powered from a 3V
or higher voltage supply. The internal op amp and feed-
back network with built-in offset provide a gain of 2.3 so
that a 0.35V to 2.5V swing at the noninverting input
provides a 0V to 5V swing at the output. The onboard
charge pump provides the boosted voltage necessary to
drive the varactor and requires only a single 0.1µF output
filter capacitor to complete the boost circuit. The amplifier
requires one capacitor (typically 1nF) at its output to set
amplifier noise bandwidth and to ensure amplifier stabil-
ity. The performance characteristics of the LTC1340 are
designed to meet the requirements of GSM and similar
cellular phone transceivers without requiring additional
circuitry. The LTC1340’s high level of functional integra-
Amplifier
The LTC1340 includes an internal gm amplifier with an on-
chip feedback network to amplify the input signal to the
gained output level. The amplifier requires an external
capacitor from its output to AGND to provide closed-loop
stability, noise bandwidth limiting and to further reduce
charge pump feedthrough. The –3dB signal bandwidth of
the amplifier is given by the following equation:
BW–3dB = gm/(2π)( COUT)(AV)
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LTC1340
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APPLICATIONS INFORMATION
Amplifiertransconductanceistypically1800µmho. Witha
1nF external capacitor at the amplifier output, the band-
width is 125kHz. The amplifier transconductance varies
with temperature and process. The minimum recom-
mendedCOUT is220pFwithatypicalbandwidthof566kHz.
should require no additional filtering. Additional filtering
to reduce feedthrough noise is possible by inserting a
resistor or a ferrite bead between OUT and COUT
.
Hookup
The two sections of the LTC1340 are carefully shielded
from each other inside the chip, but care must also be
taken in the external hookup to minimize noise at the
amplifier output. The two halves of the chip should only
meet electrically where the CP and AVCC pins connect
together and at the common point of AGND and PGND.
Separate PGND and AGND as much as possible. AGND is
the amplifier ground. Connect it to a ground plane and as
close to the VCO ground as possible. Bypass VCC and CP
to PGND with a 0.1µF capacitor. Select high quality, low
ESR and low ESL surface mount ceramic capacitors for
both the CP and the VCC bypass capacitors. Poor grade
capacitors will result in unacceptable ripple amplitude or
ringing characteristics. Connect both terminals of the
bypass capacitors as close to the chip as possible to
minimizechargepumpoutputrippleamplitudeandground
currents in the rest of the system. Keep IN and OUT away
from VCC, CP and AVCC as much as possible. Crosstalk
from VCC, CP and AVCC PCB traces to IN and OUT PCB
traces can be minimized by routing AGND PCB traces as
shieldasshowninFigures1and2. Connectthe1nFoutput
capacitor close to the varactor diode and return it to the
AGNDplane. TheSHDNandINpins, shouldnotbeallowed
to go below PGND potential as the ESD diode forms an
NPN and bleeds the charge pump output.
The slew rate of the amplifier is:
SR = IOUT/COUT
The amplifier typically sinks or sources 20µA, allowing it
to slew a 1nF output capacitance at 20V/ms, or 5V in
250µs.
Theon-chipamplifierfeedbacknetworkissetforaDCgain
of 2.3 with an input offset of 0.35V as shown in the typical
curves. The amplifier allows a rail-to-rail input swing with
a 3V supply and provides a 5V swing at the output. The
output swings to within millivolts of the AVCC voltage and
to about 100mV above AGND. The input stage of the
amplifier is powered from AVCC and accepts full GND to
VCC rail-to-rail input signals without exceeding the input
common mode range. The output noise of the amplifier is
typically 15µVRMS at frequencies between 1kHz and
100kHz.
TherearetwofeedthroughsignalsattheamplifierOUTpin
from the charge pump, the main component at 4MHz and
the second harmonic signal at 8MHz. The 4MHz
feedthroughistypicallybelow50µVwithCOUTequalto1nF
and CCP equal to 0.1µF. The feedthrough signal decreases
in amplitude when larger COUT is used. Most systems
LTC1340CS8
PIN 1
0.1µF
0.1µF
VARACTOR
DIODE
1nF
1340 F01
Figure 1. Suggested Surface Mount PCB Layout for LTC1340CS8
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LTC1340
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APPLICATIONS INFORMATION
0.1µF
PIN 1
0.1µF
VARACTOR
DIODE
1nF
LTC1340CMS8
1340 F02
Figure 2. Suggested Surface Mount PCB Layout for LTC1340CMS8
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PACKAGE DESCRIPTION
Dimensions in inches (millimeters) unless otherwise noted.
MS8 Package
8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 ± 0.004*
(3.00 ± 0.10)
8
7
6
5
0.040 ± 0.006
(1.02 ± 0.15)
0.006 ± 0.004
(0.15 ± 0.10)
0.007
(0.18)
0° – 6° TYP
0.118 ± 0.004**
(3.00 ± 0.10)
0.192 ± 0.004
(4.88 ± 0.10)
SEATING
PLANE
0.021 ± 0.004
(0.53 ± 0.01)
0.012
(0.30)
0.025
(0.65)
TYP
1
2
3
4
*
DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
MSOP08 0596
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
0.189 – 0.197*
(4.801 – 5.004)
(LTC DWG # 05-08-1610)
0.010 – 0.020
(0.254 – 0.508)
7
5
8
6
× 45°
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
0.016 – 0.050
0.406 – 1.270
0.050
(1.270)
BSC
0.014 – 0.019
(0.355 – 0.483)
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
1
2
3
4
SO8 0695
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1261, LTC1429,
LTC1550, LTC1551
GaAs FET Bias Generators
Regulated negative voltage generator from a single positive supply
1340f LT/TP 0697 7K • PRINTED IN USA
Linear Technology Corporation
●
1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900
8
●
●
FAX: (408) 434-0507 TELEX: 499-3977 www.linear-tech.com
LINEAR TECHNOLOGY CORPORATION 1997
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