LTC1693-1CS8 [Linear]
High Speed Single/Dual MOSFET Drivers; 高速单/双MOSFET驱动器型号: | LTC1693-1CS8 |
厂家: | Linear |
描述: | High Speed Single/Dual MOSFET Drivers |
文件: | 总20页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC1693
Hig h Sp e e d
Sing le / Dua l MOSFET Drive rs
U
FEATURES
DESCRIPTIO
Dual MOSFET Drivers in SO-8 Package
or Single MOSFET Driver in MSOP Package
1GΩ Electrical Isolation Between the Dual Drivers
The LTC®1693 family drives power MOSFETs at high
speed. The 1.5A peak output current reduces switching
losses in MOSFETs with high gate capacitance.
■
■
Permits High/Low Side Gate Drive
1.5A Peak Output Current
The LTC1693-1 contains two noninverting drivers. The
LTC1693-2 contains one noninverting and one inverting
driver. The LTC1693-1 and LTC1693-2 drivers are electri-
cally isolated and independent. The LTC1693-3 is a single
driver with an output polarity select pin.
■
■
16ns Rise/Fall Times at V = 12V, CL = 1nF
CC
■
■
Wide V Range: 4.5V to 13.2V
CC
CMOS Compatible Inputs with Hysteresis,
Input Thresholds are Independent of V
CC
■
■
■
The LTC1693 has VCC independent CMOS input thresh-
olds with 1.2V of typical hysteresis. The LTC1693 can
level-shift the input logic signal up or down to the rail-to-
Driver Input Can Be Driven Above V
Undervoltage Lockout
Thermal Shutdown
CC
rail V drive for the external MOSFET.
CC
U
APPLICATIO S
■
TheLTC1693contains anundervoltagelockoutcircuitand
a thermal shutdown circuit. Both circuits disable the
external N-channel MOSFET gate drive when activated.
Power Supplies
High/Low Side Drivers
Motor/Relay Control
Line Drivers
■
■
TheLTC1693-1andLTC1693-2comeinan8-leadSOpack-
age. The LTC1693-3 comes in an 8-lead MSOP package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
■
■
Charge Pumps
U
TYPICAL APPLICATIO
Two Transistor Foward Converter
V
IN
48VDC
±10%
C1
330µF
63V
C2
1.5µF
63V
+
R1
0.068Ω
D1
RETURN
MURS120
L1
1.5µH
Q1
T1
13:2
MTD20NO6HD
V
12V
OUT
1.5V/15A
C5
1µF
C3
4700pF
25V
R2
5.1Ω
D2
MURS120
•
•
C4
0.1µF
LTC1693CS8-2
1
2
3
4
8
7
6
5
IN1
GND1 OUT1
IN2
GND2 OUT2
C7
V
CC1
R3
17
249Ω
D3
MURS120
C6
470µF
6.3V
×8
C11
0.1µF
12V
IN
+
1%
20
V
CC2
BOOST
Q2
Si4420
×2
R4
C9
1800pF
5%
19
Q4
Si4420
1.24k
1%
LT1339
TG
1
2
C8
1µF
SYNC
5V
Q3
BAT54
1µF
NPO
18
11
12
16
14
13
9
MTD20NO6HD
TS
+
REF
R5
2.49k
1%
R6 100Ω
4
RETURN
SL/ADJ
SENSE
R7 100Ω
D4
3
–
C
T
SENSE
MBRO530T1
LTC1693CS8-2
1
2
3
4
8
5
IN1
GND1 OUT1
IN2
GND2 OUT2
V
I
BG
PHASE
CC1
AVG
R8
301k
1%
7
6
5
6
SS
7
V
V
C
RUN/SHDN
CC2
10
V
V
FB
C10
REF
SGND PGND
15
C12
100pF
R9
12k
0.1µF
R10
10k
1%
C13
1µF
C1: SANYO 63MV330GX
C2: WIMA SMD4036/1.5/63/20/TR
C6: KEMET T510X477M006AS (×8)
L1: GOWANDA 50-318
8
C14
3300pF
C15
0.1µF
T1: GOWANDA 50-319
1693 TA01
1
LTC1693
W W
U W
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage (V ) .............................................. 14V
Inputs (IN, PHASE) ................................... –0.3V to 14V
Junction Temperature.......................................... 150°C
Operating Ambient Temperature Range....... 0°C to 70°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
CC
Driver Output ................................. –0.3V to V + 0.3V
CC
GND1 to GND2 (Note 5) ..................................... ±100V
U
W U
PACKAGE/ORDER INFORMATION
TOP VIEW
TOP VIEW
TOP VIEW
IN1
GND1
IN2
1
2
3
4
8
7
6
5
V
IN1
GND1
IN2
1
2
3
4
8
7
6
5
V
CC1
CC1
IN 1
NC 2
PHASE 3
GND 4
8 V
CC
OUT1
OUT1
7 OUT
6 NC
5 NC
V
CC2
V
CC2
GND2
OUT2
GND2
OUT2
MS8 PACKAGE
8-LEAD PLASTIC MSOP
S8 PACKAGE
8-LEAD PLASTIC SO
S8 PACKAGE
8-LEAD PLASTIC SO
T
JMAX = 150°C, θJA = 200°C/ W
TJMAX = 150°C, θJA = 135°C/ W
TJMAX = 150°C, θJA = 135°C/ W
S8 PART
MARKING
S8 PART
MARKING
MS8 PART
MARKING
ORDER PART
NUMBER
ORDER PART
NUMBER
ORDER PART
NUMBER
LTC1693-1CS8
16931
LTC1693-2CS8
16932
LTC1693-3CMS8
LTEB
Consult factory for Industrial and Military grade parts.
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
Supply Voltage Range
Quiescent Current
4.5
13.2
V
CC
I
CC
LTC1693-1, LTC1693-2, IN1 = IN2 = 0V (Note 2)
LTC1693-3, PHASE = 12V, IN = 0V
●
●
400
200
720
360
1100
550
µA
µA
I
Switching Supply Current
LTC1693-1, LTC1693-2, C
= 4.7nF, f = 100kHz
●
●
14.4
7.2
20
10
mA
mA
CC(SW)
OUT
IN
LTC1693-3, C
= 4.7nF, f = 100kHz
IN
OUT
Input
V
High Input Threshold
●
●
●
●
●
2.2
1.1
2.6
1.4
3.1
1.7
±10
6.5
45
V
V
IH
V
IL
Low Input Threshold
I
IN
Input Pin Bias Current
±0.01
5.5
µA
V
V
PH
PHASE Pin High Input Threshold
PHASE Pin Pull-Up Current
(Note 3)
4.5
10
I
PH
PHASE = 0V (Note 3)
20
µA
Output
V
High Output Voltage
I
= –10mA
= 10mA
OUT
●
●
11.92
11.97
30
V
mV
Ω
OH
OUT
V
OL
Low Output Voltage
I
75
R
ONL
Output Pull-Down Resistance
Output Pull-Up Resistance
Output Low Peak Current
Output High Peak Current
2.85
3.00
1.70
1.40
R
ONH
Ω
I
A
PKL
I
A
PKH
2
LTC1693
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Switching Timing (Note 4)
CONDITIONS
MIN
TYP
MAX
UNITS
t
t
t
t
Output Rise Time
C
C
OUT
= 1nF
= 4.7nF
●
●
17.5
48.0
35
85
ns
ns
RISE
FALL
PLH
PHL
OUT
Output Fall Time
C
= 1nF
= 4.7nF
●
●
16.5
42.0
35
75
ns
ns
OUT
C
OUT
Output Low-High Propagation Delay
Output High-Low Propagation Delay
C
= 1nF
= 4.7nF
●
●
38.0
40.0
70
75
ns
ns
OUT
C
OUT
C
= 1nF
= 4.7nF
●
●
32
35
70
75
ns
ns
OUT
C
OUT
Driver Isolation
GND1-GND2 Isolation Resistance
R
ISO
LTC1693-1, LTC1693-2 GND1-to-GND2 Voltage = 75V
●
0.075
1
GΩ
Note 1: Absolute Maximum Ratings are those values beyond which the life
Note 4: All AC timing specificatons are guaranteed by design and are not
of a device may be impaired.
production tested.
Note 2: Supply current is the total current for both drivers.
Note 3: Only the LTC1693-3 has a PHASE pin.
Note 5: Only applies to the LTC1693-1 and LTC1693-2.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
IN Threshold Voltage
vs Temperature
IN Threshold Hysteresis
vs Temperature
IN Threshold Voltage vs V
CC
2.75
2.50
3.00
1.4
1.3
1.2
1.1
V
CC
= 12V
T = 25°C
V
CC
= 12V
A
2.75
2.50
V
IH
V
IH
2.25
2.00
1.75
1.50
1.25
2.25
2.00
1.75
1.50
1.25
V -V
IH IL
1.0
0.9
0.8
V
IL
V
IL
1.00
1.00
9
11
12
5
6
7
8
10
–25
0
50
75 100 125
–50
25
–50 –25
0
25
50
75 100 125
V
CC
(V)
TEMPERATURE (°C)
TEMPERATURE (°C)
1693 G01
1693 G02
1693 G03
3
LTC1693
TYPICAL PERFOR A CE CHARACTERISTICS
U W
PHASE Threshold Voltage vs V
Rise/Fall Time vs V
Rise/Fall Time vs Temperature
CC
CC
20
19
18
17
16
15
14
13
12
11
10
6
5
4
3
24
22
T = 25°C
T = 25°C
V
= 12V
= 1nF
= 100kHz
A
A
CC
C
OUT
= 1nF
C
f
OUT
t
RISE
f
IN
= 100kHz
IN
V
PH(H)
20
18
16
14
12
t
FALL
t
RISE
V
PH(L)
t
FALL
2
1
0
10
9
11
12
–50
–25
0
25
50
75 100 125
5
6
7
8
10
9
11
12
5
6
7
8
10
TEMPERATURE (°C)
V
CC
(V)
V
CC
(V)
1693 G06
1693 G04
1693 G05
Rise/Fall Time vs COUT
Propagation Delay vs V
Propagation Delay vs Temperature
CC
120
50
45
40
35
55
T = 25°C
T = 25°C
V
= 12V
= 1nF
= 100kHz
A
A
CC
V
CC
= 12V
C
OUT
= 1nF
C
f
50
45
40
35
30
25
20
15
OUT
f
IN
= 100kHz
100
80
60
40
20
0
f
IN
= 100kHz
IN
t
PLH
t
PHL
t
PLH
t
PHL
30
25
20
t
RISE
t
FALL
10
1
10
100
(pF)
1000
10000
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
5
6
7
8
9
10
11
12
C
OUT
V
(V)
CC
1693 G07
1693 G09
1693 G08
Output Saturation Voltage
vs Temperature
Quiescent Current
vs VCC (Single Driver)
Propagation Delay vs COUT
50
350
300
250
200
150
100
200
150
100
50
T = 25°C
V
CC
= 12V
T = 25°C
A
A
V
CC
= 12V
V
IN
= 0V
f
IN
= 100kHz
V
OH
(50mA) wrt V
CC
40
30
20
V
(50mA)
OL
t
PLH
t
PHL
V
OH
(10mA) wrt V
CC
V
OL
(10mA)
0
1
10
100
(pF)
1000
10000
–55 –35 –15
5
25 45 65 85 105 125
5
6
7
8
9
10
11
12
C
TEMPERATURE (°C)
V
CC
(V)
OUT
1693 G10
1693 G11
1693 G12
4
LTC1693
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Switching Supply Current
vs COUT (Single Driver)
VOL vs Output Current
100
90
80
70
60
50
40
30
20
10
0
300
250
T = 25°C
V
= 12V
A
CC
V
CC
= 12V
T = 25°C
A
200
150
V
OL
200kHz
100kHz
25kHz
100
50
0
750kHz
500kHz
1
10
100
(pF)
1000
10000
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
C
OUT
1693 G13
1693 G14
VOH vs Output Current
Thermal Derating Curves
1400
1200
1000
800
600
400
200
0
350
300
T = 25°C
A
T = 125°C
J
V
CC
= 12V
250
LTC1693-1/LTC1693-2
V
OH
200
150
100
50
LTC1693-3
0
0
30
50 60 70 80 90 100
–55 –35 –15
5
25 45 65 85 105 125
10 20
40
OUTPUT CURRENT (mA)
AMBIENT TEMPERATURE (°C)
1693 G15
1693 G16
5
LTC1693
U
U
U
PIN FUNCTIONS
SO-8 Package (LTC1693-1, LTC1693-2)
MSOP Package (LTC1693-3)
IN (Pin 1): Driver Input. The input has V independent
IN1, IN2 (Pins 1, 3): Driver Inputs. The inputs have V
CC
CC
independent thresholds with 1.2V typical hysteresis to thresholds with hysteresis to improve noise immunity.
improve noise immunity.
NC (Pins 2, 5, 6): No Connect.
GND1, GND2 (Pins 2, 4): Driver Grounds. Connect to a
PHASE (Pin 3): Output Polarity Select. Connect this pin to
low impedance ground. The V bypass capacitor should
CC
V or leave it floating for noninverting operation. Ground
CC
connect directly to this pin. The source of the external
MOSFET should also connect directly to the ground pin.
This minimizes the AC current path and improves signal
integrity. The ground pins should not be tied together if
isolation is required between the two drivers of the
LTC1693-1 and the LTC1693-2.
this pin for inverting operation. The typical PHASE pin
input current when pulled low is 20µA.
GND (Pin 4): Driver Ground. Connect to a low impedance
ground. The V bypass capacitor should connect directly
CC
to this pin. The source of the external MOSFET should also
connect directly to the ground pin. This minimizes the AC
current path and improves signal integrity.
OUT 1, OUT2 (Pins 5, 7): Driver Outputs. The LTC1693-
1’s outputs are in phase with their respective inputs (IN1,
IN2). The LTC1693-2’s topside driver output (OUT1) is in
phase with its input (IN1) and the bottom side driver’s
output(OUT2)is oppositeinphasewithrespecttoits input
pin (IN2).
OUT (Pin 7): Driver Output.
V (Pin 8): Power Supply Input.
CC
V
CC1, V
(Pins 6, 8): Power Supply Inputs.
CC2
W
BLOCK DIAGRA SM
8
7
8
7
8
7
V
V
V
CC
CC1
CC1
1
1
2
1
4
IN1
IN1
IN
OUT1
OUT1
OUT
2
GND1
GND1
GND
6
5
6
5
V
CC2
V
CC2
3
3
4
3
2
6
5
IN2
IN2
PHASE
NC
NC
NC
OUT2
OUT2
4
GND2
GND2
LTC1693-1
DUAL NONINVERTING DRIVER
LTC1693-2
TOPSIDE NONINVERTING DRIVER
AND BOTTOM SIDE INVERTING DRIVER
LTC1693-3
SINGLE DRIVER WITH
POLARITY SELECT 1693 BD
6
LTC1693
TEST CIRCUITS
1/2 LTC1693-1 OR 1/2 LTC1693-2
87V
V
CC1
8
7
4.7µF
0.1µF
IN1
OUT1
12V
1
2
P-P
4.7nF
75V
GND1
A
1/2 LTC1693-1 OR 1/2 LTC1693-2
12V
V
CC2
6
5
+
IN2
OUT2
75V
–
3
4
4.7µF
0.1µF
4.7nF
GND2
1693 TC03
1693 TC02
75V High Side Switching Test
LTC1693-1, LTC1693-2 Ground Isolation Test
V
CC
= 12V
4.7µF
0.1µF
IN
OUT
1nF OR 4.7nF
5V
t
< 10ns
RISE/FALL
1693 TC01
AC Parameter Measurements
W U
W
TI I G DIAGRA
INPUT RISE/FALL TIME <10ns
V
IH
INPUT
V
IL
NONINVERTING
OUTPUT
90%
10%
t
t
f
r
t
t
PHL
PLH
90%
10%
INVERTING
OUTPUT
t
t
r
f
t
t
PHL
PLH
1693 TD
7
LTC1693
U
W U U
APPLICATIONS INFORMATION
+
V
CC
V
Overview
TheLTC1693singleanddualdrivers allow3V-or5V-based
digital circuits to drive power MOSFETs at high speeds. A
power MOSFET’s gate-charge loss increases with switch-
ingfrequencyandtransitiontime. The LTC1693is capable
of driving a 1nF load with a 16ns rise and fall time using a
L
EQ
(LOAD INDUCTOR
OR STRAY LEAD
INDUCTANCE)
V
DRAIN
LTC1693
C
GD
P1
OUT
POWER
MOSFET
VCC of 12V. This eliminates the need for higher voltage
supplies, such as 18V, to reduce the gate charge losses.
N1
C
GS
The LTC1693’s 360µA quiescent current is an order of
magnitude lower than most other drivers/buffers. This
improves system efficiency in both standby and switching
operation. Since a power MOSFET generally accounts for
the majority of power loss in a converter, addition of the
LT1693toahighpowerconverterdesigngreatlyimproves
efficiency, using very little board space.
GND
1693 F01
Figure 1. Capacitance Seen by OUT During Switching
The LTC1693’s output peak currents are 1.4A (P1) and
1.7A (N1) respectively. The N-channel MOSFET (N1) has
higher current drive capability so it can discharge the
power MOSFET’s gate capacitance during high-to-low
signal transitions. When the power MOSFET’s gate is
pulled low by the LTC1693, its drain voltage is pulled high
byits load(e.g., aresistororinductor). Theslewrateofthe
drain voltage causes current to flow back to the MOSFETs
gate through its gate-to-drain capacitance. If the MOSFET
driver does not have sufficient sink current capability (low
output impedance), the current through the power
MOSFET’s Miller capacitance (CGD) can momentarily pull
the gate high, turning the MOSFET back on.
The LTC1693-1 and LTC1693-2 are dual drivers that are
electrically isolated. Each driver has independent opera-
tion from the other. Drivers may be used in different parts
ofasystem,suchas acircuitrequiringafloatingdriverand
the second driver being powered with respect to ground.
Input Stage
The LTC1693 employs 3V CMOS compatible input thresh-
olds thatallowalowvoltagedigitalsignaltodrivestandard
power MOSFETs. The LTC1693 incorporates a 4V internal
regulatortobias theinputbuffer. This allows the3VCMOS
Rise/Fall Time
compatible input thresholds (V = 2.6V, V = 1.4V) to be
IH
IL
independent of variations in V . The 1.2V hysteresis
Since the power MOSFET generally accounts for the ma-
jority of power lost in a converter, it’s important to quickly
turniteitherfully“on”or“off”therebyminimizingthetran-
sition time in its linear region. The LTC1693 has rise and
falltimes ontheorderof16ns,deliveringabout1.4Ato1.7A
CC
between V and V eliminates false triggering due to
IH
IL
groundnoiseduringswitchingtransitions.TheLTC1693’s
input buffer has a high input impedance and draws less
than 10µA during standby.
of peak current to a 1nF load with a V of only 12V.
CC
Output Stage
The LTC1693’s rise and fall times are determined by the
peak current capabilities of P1 and N1. The predriver,
shown in Figure 1 driving P1 and N1, uses an adaptive
method to minimize cross-conduction currents. This is
done with a 6ns nonoverlapping transition time. N1 is fully
turned off before P1 is turned-on and vice-versa using this
6ns buffer time. This minimizes any cross-conduction
currents while N1 and P1 are switching on and off yet is
short enough to not prolong their rise and fall times.
The LTC1693’s output stage is essentially a CMOS in-
verter, as shown by the P- and N-channel MOSFETs in
Figure 1 (P1 and N1). The CMOS inverter swings rail-to-
rail, giving maximum voltage drive to the load. This large
voltage swing is important in driving external power
MOSFETs, whose RDS(ON) is inversely proportional to its
gate overdrive voltage (VGS – V ).
T
8
LTC1693
U
W U U
APPLICATIONS INFORMATION
Driver Electrical Isolation
driver is powered with respect to ground. Similarly Figure
3 shows a simplified circuit of a LTC1693-1 which is driv-
ing MOSFETs with different ground potentials. Because
there is 1GΩ of isolation between these drivers in a single
package, ground current on the secondary side will not
recirculate to the primary side of the circuit.
TheLTC1693-1andLTC1693-2incorporatetwoindividual
drivers inasinglepackagethatcanbeseparatelyconnected
to GND and V connections. Figure 2 shows a circuit with
CC
an LTC1693-2, its top driver left floating while the bottom
Power Dissipation
V
IN
LTC1693-2
V
CC1
To ensure proper operation and long term reliability, the
LTC1693mustnotoperatebeyondits maximumtempera-
ture rating. Package junction temperature can be calcu-
lated by:
IN1
OUT1
N1
GND1
T = TA + PD(θJA)
J
•
where:
V
CC2
T = Junction Temperature
J
+
V
TA = Ambient Temperature
IN2
OUT2
N2
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
GND2
Power dissipation consists of standby and switching
power losses:
1693 F02
Figure 2. Simplified LTC1693-2 Floating Driver Application
PD = PSTDBY + PAC
where:
OTHER
PRIMARY-SIDE
CIRCUITS
OTHER
SECONDARY-SIDE
CIRCUITS
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
•
•
TheLTC1693consumes verylittlecurrentduringstandby.
LTC1693-1
V
CC1
This DC power loss per driver at V = 12V is only
CC
+
V
(360µA)(12V) = 4.32mW.
IN1
OUT1
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capactive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Load losses for the CMOS driver driving
a pure capacitive load COUT will be:
GND1
V
CC2
+
V
IN2
OUT2
Load Capacitive Power (COUT) = (COUT)(f)(V )2
CC
GND2
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated by its gate charge factor, QG. The QG value
1693 F03
Figure 3. Simplified LTC1693-1 Application
with Different Ground Potentials
9
LTC1693
APPLICATIONS INFORMATION
U
W U U
V
CC
corresponding to MOSFET’s VGS value (V in this case)
CC
can be readily obtained from the manafacturer’s QGS vs
VGS curves:
LTC1693
Load Capacitive Power (MOS) = (V )(QG)(f)
CC
INPUT SIGNAL
GOING BEL0W
GND PIN
IN
R1
D1
Transition state power losses are due to both AC currents
required to charge and discharge the drivers’ internal
nodal capacitances and cross-conduction currents in the
internal gates.
POTENTIAL
PARASITIC
SUBSTRATE
DIODE
1693 F04
UVLO and Thermal Shutdown
GND
The LTC1693’s UVLO detector disables the input buffer
Figure 4
and pulls the output pin to ground if V < 4V. The output
CC
remains off from V = 1V to V = 4V. This ensures that
during start-up or improper supply voltage values, the
LTC1693 will keep the output power MOSFET off.
CC
CC
Bypassing and Grounding
LTC1693requires properV bypassingandgroundingdue
CC
to its high speed switching (ns) and large AC currents (A).
Careless componentplacementandPCBtraceroutingmay
cause excessive ringing and under/overshoot.
The LTC1693 also has a thermal detector that similarly
disables the input buffer and grounds the output pin if
junction temperature exceeds 145°C. The thermal shut-
down circuit has 20°C of hysteresis. This thermal limit
helps to shut down the system should a fault condition
occur.
To obtain the optimum performance from the LTC1693:
A. Mountthebypass capacitors as closeas possibletothe
V and GND pins. The leads should be shortened as
CC
Input Voltage Range
much as possible to reduce lead inductance. It is
recommended to have a 0.1µF ceramic in parallel with
a low ESR 4.7µF bypass capacitor.
LTC1693’s input pin is a high impedance node and essen-
tially draws neligible input current. This simplifies the
input drive circuitry required for the input.
Forhighvoltageswitchinginaninductiveenvironment,
ensure that the bypass capacitors’ VMAX ratings are
high enough to prevent breakdown. This is especially
important for floating driver applications.
The LTC1693 typically has 1.2V of hysteresis between its
lowandhighinputthresholds. This increases thedriver’s
robustness againstanygroundbouncenoises. However,
care should still be taken to keep this pin from any noise
pickup, especially in high frequency switching
applications.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Re-
member that the LTC1693 switches 1.5A peak currents
and any significant ground drop will degrade signal
integrity.
In applications where the input signal swings below the
GND pin potential, the input pin voltage must be clamped
to prevent the LTC1693’s parastic substrate diode from
turning on. This can be accomplished by connecting a
series currentlimitingresistorR1andashuntingSchottky
diode D1 to the input pin (Figure 4). R1 ranges from 100Ω
to 470Ω while D1 can be a BAT54 or 1N5818/9.
C. Planthegroundroutingcarefully.Knowwherethelarge
load switching current is coming from and going to.
Maintain separate ground return paths for the input pin
and output pin. Terminate these two ground traces only
at the GND pin of the driver (STAR network).
D. Keepthecoppertracebetweenthedriveroutputpinand
the load short and wide.
10
LTC1693
U
TYPICAL APPLICATIONS
11
LTC1693
TYPICAL APPLICATIONS
U
Negative-to-Positive Synchronous Boost Converter
D2
MBRO530
V
S
L2**
1µH
V
OUT
3.3V
6A
D1
MBRS130
+
C14
10µF
16V
C13
0.1µF
R19
1k
C3
C2
R5
2.2Ω
+
+
6
330µF
6.3V
× 2
330µF
6.3V
×5
Q2
Si4420
×2
5
3
C12
4700pF
R1
0.015Ω
1W
D4
MBRO530
C17
100pF
U2B
LTC1693-2
L1*
4.8µH
4
R2
0.015Ω
1W
D3
MBRO530
D5
MBRO530
C11
4700pF
R16
3.6k
C1
+
330µF
6.3V
×5
Q6
2N3904
8
2
Q1
Si4420
×2
R3
100Ω
R4
2.2Ω
7
1
+
C16
10µF
16V
R14
51Ω
R15
1.2k
U2A
LTC1693-2
C15
0.1µF
V
IN
–5V
C4
1000pF
9
–
8
R6
10Ω
R17
6.81k
–
SENSE SENSE
2
1
3.3V
PWR V
IN
TDRV
BDRV
LBI
3
4
5
6
16
13
11
14
R18
6.81k
R8
30.1k
R10
100k
R11
100k
PINV
BINH
+
C6
10µF
16V
U1
LTC1266
V
S
Q4
2N3906
Q5
2N3906
V
IN
SHDN
LBO
Q3
2N7002
C
T
I
SGND PGND
12 15
V
C5
0.1µF
C7
390pF
TH
FB
*PANASONIC ETQPAF4R8HA
**COILCRAFT DO3316P-102
7
10
C9
0.015µF
C8
1500pF
C10
220pF
R9
13k
R12
4.75k
R13
1.30k
R7
1k
1693 TA03
12
LTC1693
U
TYPICAL APPLICATIONS
•
•
•
•
•
•
13
LTC1693
U
TYPICAL APPLICATIONS
R T O P
C O M P
R M I D
G N D - S
G N D - F
V
+
E F F I C I E N C Y
C
V
S S
P G N D
S G N D
R E F
V
M U R S 1 2 0
S E N S E
S E N S E
A V G
I
–
S L / A D J
C T
+
T S
R E F
5 V
T G
S Y N C
B O O S T
V
14
LTC1693
U
TYPICAL APPLICATIONS
5V to 12V Boost Converter
R2
13k
1%
R1
7.5k
1%
D1
BAT85
V
CC
= 5V
+
C2
0.1µF
C3
4.7µF
L1*
22µH
D2
1N5819
V
OUT
8
12V
50mA
1
7
Q1
BS170
LTC1693-3
4
+
C
47µF
L
3
C1
680pF
1693 TA06a
INDUCTOR PEAK CURRENT ≈600mA
R2, C1 SET THE OSCILLATION FREQUENCY AT 200kHz
R1 SETS THE DUTY CYCLE AT 45%
EFFICIENCY ≈80% AT 50mA LOAD
*SUMIDA CDRH125-220
Efficiency
Output Voltage
18
16
14
12
10
8
100
90
V
= 5V
V
= 5V
CC
CC
50mA LOAD
50mA LOAD
80
70
60
50
6
35
45
50
55
60
65
40
10
12
13
14
15
16
11
DUTY CYCLE (%)
OUTPUT VOLTAGE (V)
1693 TA06b
1693 TA06c
15
LTC1693
TYPICAL APPLICATIONS
U
Charge Pump Doubler
R1
11k
1%
V
CC
= 5V
V
CC
= 5V
C2
D1
1N5817
1µF
C3
1µF
D2
1N5817
8
1
7
LTC1693-3
4
V
OUT
+
3
C1
680pF
C
L
47µF
1693 TA07a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
100
80
12
10
V
CC
= 5V
V
CC
= 5V
8
6
60
40
20
0
4
2
0
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07c
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07b
16
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Inverter
R1
11k
1%
V
CC
= 5V
C2
1µF
C3
1µF
D2
1N5817
8
1
7
LTC1693-3
4
V
OUT
C
L
3
C1
680pF
47µF
+
D1
1N5817
1693 TA08a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
0
100
80
V
CC
= 5V
V
CC
= 5V
–1
–2
–3
60
40
20
0
–4
–5
–6
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA08c
1693 TA08b
17
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Tripler
R1
11k
1%
V
CC
= 5V
V
CC
= 5V
C2
D1
1N5817
1µF
C3
1µF
D2
1N5817
D3
1N5817
D4
1N5817
8
1
7
LTC1693-3
4
V
OUT
+
+
3
C4
3.3µF
C
L
47µF
C5
1µF
C1
680pF
1693 TA09a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
18
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
V
CC
= 5V
V
= 5V
CC
6
4
2
0
0
10 20 30 40 50
100
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
60 70 80 90
OUTPUT CURRENT (mA)
1693 TA09b
1693 TA09c
18
LTC1693
U
PACKAGE DESCRIPTION
Dimensions in inches (millimeters) unless otherwise noted.
MS8 Package
8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 ± 0.004*
(3.00 ± 0.102)
8
7
6
5
0.118 ± 0.004**
(3.00 ± 0.102)
0.192 ± 0.004
(4.88 ± 0.10)
1
2
3
4
0.040 ± 0.006
(1.02 ± 0.15)
0.034 ± 0.004
(0.86 ± 0.102)
0.007
(0.18)
0° – 6° TYP
SEATING
PLANE
0.012
(0.30)
REF
0.021 ± 0.006
(0.53 ± 0.015)
0.006 ± 0.004
(0.15 ± 0.102)
MSOP (MS8) 1197
0.0256
(0.65)
TYP
* DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
7
5
8
6
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
1
3
4
2
0.010 – 0.020
(0.254 – 0.508)
× 45°
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
0.050
(1.270)
TYP
0.014 – 0.019
(0.355 – 0.483)
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
SO8 0996
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection ofits circuits as described herein willnot infringe on existing patent rights.
19
LTC1693
U
TYPICAL APPLICATION
C7
2.2nF
100V
Push-Pull Converter
R3
10Ω
1
2
•
•
T1A
24T
#32
V
CC
= 5V
•
•
+
1
9
8
9
8
C6
330µF
6.3V
T1B
T1E
24T
#28
D1
MBR340
24T
#32
L1
1µH
R1
6.2k
V
CC
= 5V
2
V
OUT
12V
1A
C3
0.1µF
C4
1µF
+
C9
V
= 5V
•
•
CC
3
4
T1C
24T
#32
T1F
24T
#28
8
LTC1693-2
2
270µF
25V
×3
D2
MBR340
C2
0.1µF
1
3
7
Q1
Si4410
R2
10Ω
10 14 13
3
4
14
T1D
24T
#32
C5
2.2nF
100V
×2
PRESET CLR
13
12
11
12
9
8
74HC14
7
Q
R4
10Ω
74HC74
C8
2.2nF
100V
C1
390pF
D
Q
6
LTC1693-2
4
GND
7
5
Q2
Si4410
T1: PHILIPS CPHS-EFD20-1S-10P
FIRST WIND T1A AND T1C BIFILAR,
THEN WIND T1E AND T1F BIFILAR,
THEN WIND T1B AND T1D BIFILAR
1693 F05a
Efficiency
Output Voltage
100
90
80
70
60
50
40
30
20
14
12
V
= 5V
V
= 5V
CC
CC
10
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.3
0.5 0.6 0.7 0.8 0.9 1.0
0.1 0.2
0.4
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
1693 F05c
1693 F05b
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
Internal Charge Pump, 4.5V to 48V Supply Range, t = 80µs, t = 28µs
LTC1154
High Side Micropower MOSFET Drivers
ON
OFF
LTC1155
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
4.5V to 18V Supply Range
4.5V to 18V Supply Range
3.3V or 5V Supply Range
LTC1156
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
LTC1157
LT®1160/LT1162
LT1161
3.3V Dual Micropower High/Low Side Driver
Half/Full Bridge N-Channel Power MOSFET Driver
Quad Protected High Side MOSFET Driver
Triple 1.8V to 6V High Side MOSFET Driver
High Power Synchronous DC/DC Controller
Dual Driver with Topside Floating Driver, 10V to 15V Supply Range
8V to 48V Supply Range, t = 200µs, t = 28µs
ON
OFF
LTC1163
LT1339
1.8V to 6V Supply Range, t = 95µs, t = 45µs
ON OFF
Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive
LTC1435
High Efficiency, Low Noise Current Mode
Step-Down DC/DC Controller
3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET
Synchronous Drive
1693f LT/TP 0499 4K • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1999
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
20
●
●
(408)432-1900 FAX:(408)434-0507 www.linear-tech.com
相关型号:
LTC1693-1CS8#PBF
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
Linear
LTC1693-1CS8#TR
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
Linear
LTC1693-1IS8#PBF
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
Linear
LTC1693-1IS8#TRPBF
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
Linear
LTC1693-2CS8#PBF
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
Linear
LTC1693-2CS8#TR
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
Linear
©2020 ICPDF网 联系我们和版权申明