LTC2926IGN#TRPBF [Linear]
暂无描述;型号: | LTC2926IGN#TRPBF |
厂家: | Linear |
描述: | 暂无描述 |
文件: | 总28页 (文件大小:533K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC2926
MOSFET-Controlled
Power Supply Tracker
U
DESCRIPTIO
FEATURES
■
Flexible Power Supply Tracking and Sequencing
The LTC2926 provides a simple solution for tracking and
sequencing up to three power supply rails. An N-channel
MOSFET and a few resistors per channel configure the
load voltages to ramp up and down together, with voltage
offsets, with time delays or with different ramp rates.
■
Adjustable Ramp Rates, Offsets and Time Delays
■
Controls Three Supplies with Series MOSFETs
■
Integrated Remote Sense Switching
■
FAULT Input/Output
■
STATUS Output/Power Good Input
Automaticremotesenseswitchingcompensatesforvoltage
drops across the MOSFETs. The LTC2926 provides two
integrated switches as well as a signal to control optional
additional external N-channel MOSFET sense switches.
■
Available in 20-Lead Narrow SSOP and 20-Lead QFN
(4mm × 5mm) Packages
U
APPLICATIO S
The LTC2926 includes I/O signals for communication with
other devices. The status output asserts after tracking and
sequencing have completed. A low voltage on the power
good input after an adjustable timeout period causes load
disconnect. A low voltage on the fault I/O causes immedi-
ate load disconnect. Until it is reset, a fault latch prevents
tracking and keeps the loads disconnected.
■
V
and V Supply Tracking
CORE
I/O
■
■
■
Microprocessor, DSP and FPGA Supplies
Servers
Communications Systems
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Protected by U.S. Patents including 6897717.
U
TYPICAL APPLICATIO
1.8V MODULE
IRF7413Z
OUT
3.3V SLAVE2
1.8V
SLAVE1
100Ω
SENSE
10Ω
1.8V SLAVE1
500mV/DIV
3.3V MODULE
IRF7413Z
3.3V
SLAVE2
OUT
0.1µF
100Ω
SENSE
10Ω
SGATE2 SGATE1
2926 TA01b
V
CC
5ms/DIV
D1
D2
S1
15.0k
9.53k
FB1
3.3V SLAVE2
RAMPBUF
TRACK1
15.0k
9.53k
S2
15.0k
15.0k
LTC2926
1.8V SLAVE1
500mV/DIV
FB2
V
CC
4.02k
TRACK2
V
CC
10k
4.02k
STATUS
STATUS/PGI
MGATE
10k
FAULT
FAULT
ON
0.1µF
2926 TA01c
ON/OFF
RAMP
5ms/DIV
GND PGTMR
1µF
2926 TA01
2926fa
1
LTC2926
W W U W
ABSOLUTE AXI U RATI GS
(Notes 1, 2)
RMS Currents
Supply Voltage (V ) ................................. –0.3V to 10V
CC
TRACK1, TRACK2................................................5mA
FB1, FB2 ..............................................................5mA
D1, S1, D2, S2...................................................30mA
Operating Temperature
Input Voltages
ON ......................................................... –0.3V to 10V
RAMP .............................................–0.3V to V + 1V
CC
TRACK1, TRACK2........................–0.3V to V + 0.3V
CC
LTC2926C ................................................ 0°C to 70°C
LTC2926I ............................................. –40°C to 85°C
Storage Temperature Range
PGTMR........................................–0.3V to V + 0.3V
CC
Input/Output Voltages
FAULT .................................................... –0.3V to 10V
STATUS/PGI (Note 3).......................... –0.3V to 11.5V
Output Voltages
GN Package ....................................... –65°C to 150°C
UFD Package...................................... –65°C to 125°C
Lead Temperature (Soldering, 10 sec)
RAMPBUF....................................–0.3V to V + 0.3V
CC
GN Package ...................................................... 300°C
FB1, FB2, D1, S1, D2, S2....................... –0.3V to 10V
MGATE, RSGATE (Note 3)................... –0.3V to 11.5V
SGATE1, SGATE2 (Note 3).................. –0.3V to 11.5V
U
W
U
PACKAGE/ORDER I FOR ATIO
TOP VIEW
TOP VIEW
V
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
RAMPBUF
TRACK2
FB2
CC
20 19 18 17
TRACK1
FB1
FB1
S1
1
2
3
4
5
6
16 FB2
15 S2
S1
S2
SGATE1
D1
14 SGATE2
13 D2
SGATE1
D1
SGATE2
D2
21
ON
12 STATUS/PGI
11 RSGATE
ON
STATUS/PGI
RSGATE
MGATE
RAMP
PGTMR
PGTMR
FAULT
7
8
9 10
GND 10
GN PACKAGE
20-LEAD PLASTIC SSOP
= 125°C, θ = 85°C/W
UFD PACKAGE
20-LEAD (4mm × 5mm) PLASTIC QFN
T
JMAX
JA
EXPOSED PAD (PIN 21) IS GND
PCB CONNECTION OPTIONAL
T
JMAX
= 125°C, θ = 43°C/W
JA
ORDER PART NUMBER
ORDER PART NUMBER
UFD PART MARKING*
LTC2926CGN
LTC2926IGN
LTC2926CUFD
LTC2926IUFD
2926
2926
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.*The temperature grade is identified by a label on the shipping container.
2926fa
2
LTC2926
ELECTRICAL CHARACTERISTICS
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T = 25°C. V = 3.3V unless otherwise specified.
A
CC
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
●
●
V
Input Supply Voltage
Input Supply Current
Operating Range
2.9
1.5
3.3
2.5
5.5
3.5
V
CC
I
I
I
= 0mA, I = 0mA,
RAMPBUF
mA
CC
TRACKn
FBn
= 0mA
●
I
I
= –1mA, I = –1mA,
RAMPBUF
8.5
9.5
10.5
mA
TRACKn
FBn
= –3mA
●
●
V
Input Supply Undervoltage Lockout
V
CC
Rising
2.2
15
2.4
50
2.6
75
V
CC(UVLO)
ΔV
Input Supply Undervoltage Lockout
Hysteresis
mV
CC(UVLO)
Control and I/O
●
●
●
●
●
●
●
●
●
●
●
V
ON Pin Threshold Voltage
V
Rising
1.20
40
1.23
75
1.26
110
V
mV
nA
V
ON(TH)
ON
ΔV
ON Pin Threshold Voltage Hysteresis
ON Pin Input Current
ON(TH)
I
ON
V
V
V
V
V
V
= 1.2V, V = 5.5V
0
100
ON
CC
V
ON Pin Fault Clear Threshold Voltage
Fault Clear Delay
Falling
Falling
Rising
Rising
0.465
1
0.500
3
0.535
10
ON(CLR)
CLR
ON
t
µs
V
ON
V
ON Pin Fault Arm Threshold Voltage
Fault Arm Delay
0.565
1
0.600
4.5
0.635
10
ON(ARM)
ARM
ON
t
µs
V
ON
V
FAULT Pin Input Threshold Voltage
FAULT Pin Pull-up Current
FAULT Pin Output Low Voltage
FAULT Pin Output High Voltage
Falling
0.465
–3.0
0.500
–8.5
100
550
0.535
–13
FAULT(TH)
FAULT
I
Fault Latch Clear, V
= 1.5V
µA
mV
mV
FAULT(UP)
FAULT
V
V
Fault Latch Set, I
= 5mA, V = 2.7V
400
FAULT(OL)
FAULT
CC
Fault Latch Clear, I
= –1µA
300
1.10
30
900
FAULT(OH)
FAULT
(V – V
)
CC
FAULT
●
●
V
STATUS/PGI Pin Input Threshold
Voltage
V
Rising
1.23
75
1.36
150
V
PGI(TH)
STATUS/PGI
ΔV
STATUS/PGI Pin Input Threshold
Voltage Hysteresis
mV
PGI(TH)
●
●
●
I
STATUS/PGI Pin Pull-Up Current
STATUS/PGI Pin Output Low Voltage
STATUS/PGI Pin Output High Voltage
STATUS/PGI On, V
= 1.5V
–7
–10
200
5.5
–13
400
6.0
µA
mV
V
PGI(UP)
STATUS/PGI
V
V
V
ON
Low, I
= 5mA, V = 2.7V
STATUS/PGI CC
STATUS(OL)
I
= –1µA
5.0
STATUS(OH)
STATUS/PGI
(V
– V )
CC
STATUS/PGI
●
●
●
●
V
PGTMR Pin Threshold Voltage
PGTMR Pin Pull-Up Current
V
Rising
1.10
–8
1.23
–10
4
1.36
–12
10
V
µA
PGTMR(TH)
PGTMR(UP)
PGTMR(DN)
PGTMR
I
I
ON High, V
= 1V
PGTMR
PGTMR Pin Pull-Down Current
PGTMR Pin Clear Threshold Voltage
ON Low, V
= 0.1V, V = 2.7V
0.5
50
mA
mV
PGTMR
CC
V
V
Falling
100
150
PGTMR(CLR)
PGTMR
Ramp Buffer
●
●
●
I
RAMP Pin Input Current
0V < V
< 5.5V, V = 5.5V
0
0
1
10
60
µA
mV
mV
RAMP(IN)
RAMP
CC
= 0mA
CC RAMPBUF
V
V
Ramp Buffer Offset Voltage
RAMPBUF Pin Output Low Voltage
V
RAMP
= 1/2 V , I
RAMPBUF(OS)
I
= 3mA
32
RAMPBUF(OL)
RAMPBUF
2926fa
3
LTC2926
ELECTRICAL CHARACTERISTICS
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T = 25°C. V = 3.3V unless otherwise specified.
A
CC
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
●
V
RAMPBUF Pin Output High Voltage
I
= –3mA
60
80
mV
RAMPBUF(OH)
RAMPBUF
(V – V
)
CC
RAMPBUF
Tracking Channels
●
●
I
I
to I
FBn
Current Mismatch
TRACKn TRACKn
I
I
= –10µA
= –1mA
0
0
3
3
%
%
ERROR(%)
FBn
TRACKn
TRACKn
TRACKn
(I – I
)/I
• 100%
●
●
V
TRACK Pins Voltage
I
I
= –10µA
= –1mA
0.776
0.776
0.800
0.800
0.824
0.824
V
V
TRACK
TRACKn
TRACKn
●
●
●
V
FB Pins Internal Reference Voltage
FB Pins Leakage Current
V
= V , I = 0mA
0.784
0.800
0
0.816
10
V
nA
V
FB(REF)
TRACKn
CC FBn
I
V
FBn
= 0.8V, V = 5.5V
CC
FB(LEAK)
V
FB Pins Clamp Voltage
–1mA < I < –1µA
1.7
2.0
2.4
FB(CLAMP)
FBn
Master Ramp and Supply
●
ΔV
MGATE Pin External N-Channel Gate
Drive (V – V
I
= –1µA
MGATE
5.0
5.5
6.0
V
MGATE
)
CC
MGATE
●
●
●
I
I
I
MGATE Pin Pull-Up Current
Fault Latch Clear, V High, V
= 3.3V
= 3.3V
–7
7
–10
10
–13
13
µA
µA
MGATE(UP)
MGATE(DN)
MGATE(FAULT)
ON
MGATE
MGATE Pin Pull-Down Current
MGATE Pin Fault Pull-Down Current
Fault Latch Clear, V Low, V
ON
MGATE
Fault Latch Set, V High, V
CC
= 5.5V,
5
20
50
mA
ON
MGATE
V
= 5.5V
Slave Supplies
●
●
●
ΔV
SGATE Pins External N-Channel Gate
I
= –1µA, V = 0.75V
5.0
–6
6
5.5
–10
10
6.0
–13
13
V
µA
µA
SGATE
SGATEn
FBn
Drive (V
– V )
CC
SGATEn
I
I
SGATE Pins Pull-Up Current
Fault Latch Clear, V = V
V
– 10mV,
+ 10mV,
SGATE(UP)
SGATE(DN)
FBn
FB(REF)
FB(REF)
= 3.3V
SGATEn
SGATE Pins Pull-Down Current
Fault Latch Clear, V = V
FBn
V
= 3.3V
SGATEn
●
●
●
I
I
I
SGATE Pins Fast Pull-Up Current
SGATE Pins Fast Pull-Down Current
SGATE Pins Fault Pull-Down Current
Fault Latch Clear, V = 0V, V
= 3.3V
–21
21
5
–30
30
–39
39
µA
µA
SGATE(UPFST)
SGATE(DNFST)
SGATE(FAULT)
FBn
SGATEn
Fault Latch Clear, V = 1V, V
= 3.3V
FBn
SGATEn
Fault Latch Set, V High, V
CC
= 5.5V,
20
50
mA
ON
SGATEn
V
= 5.5V
Remote Sense Switches
●
ΔV
RSGATE
RSGATE Pin External N-Channel Gate
Drive (V – V
I
= –1µA
5.0
5.5
6.0
V
RSGATE
)
CC
RSGATE
●
●
I
I
RSGATE Pin Pull-Up Current
Fault Latch Clear, Switches On, V
= 0V
RSGATE
–7
7
–10
10
–13
13
µA
µA
RSGATE(UP)
RSGATE(DN)
RSGATE Pin Pull-Down Current
Fault Latch Clear, Switches Off,
V
= 3.3V
RSGATE
●
●
●
I
RSGATE Pin Fault Pull-Down Current
RSGATE Pin Threshold Voltage
Fault Latch Set, Switches Off,
= 5.5V, V = 5.5V
5
20
1.23
2
50
1.36
10
mA
V
RSGATE(FAULT)
V
RSGATE
CC
V
Ramping Completed on Pin Low, RSGATE
Falling
1.10
RSGATE(TH)
Ω
R
Remote Sense Switch On-Resistance Switches On, V = V + 0.3V, I = –10mA
Dn CC Sn
SW(ON)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 3: The MGATE, SGATE1, SGATE2, RSGATE and STATUS/PGI pins are
internally limited to a minimum of 11.5V. Driving these pins to voltages
beyond the clamp level may damage the part.
Note 2: All currents into the device pins are positive; all currents out of
the device pins are negative. All voltages are referenced to ground unless
otherwise specified.
2926fa
4
LTC2926
U W
TYPICAL PERFOR A CE CHARACTERISTICS Specifications are at T = 25°C, V = 3.3V
A
CC
unless otherwise specified.
Supply Current vs Supply Voltage
Supply Current vs Temperature
Track Pin Voltage vs Temperature
12
10
8
12
10
8
0.812
0.808
0.804
0.800
0.796
0.792
0.788
I
I
I
= –3mA
RAMPBUF
TRACKn
FBn
I
I
I
= –3mA
RAMPBUF
TRACKn
FBn
I
= –10µA
= –1mA
TRACK
= –1mA
= –1mA
= –1mA
6
6
I
= –1mA
TRACK
I
I
I
= 0mA
RAMPBUF
TRACKn
FBn
I
I
I
= 0mA
RAMPBUF
TRACKn
FBn
= 0mA
= 0mA
4
4
= 0mA
= 0mA
2
2
0
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
(V)
–50
–25
0
25
50
75
100
–50
–25
0
25
50
75
100
V
TEMPERATURE (°C)
TEMPERATURE (°C)
CC
2926 G01
2926 G02
2926 G03
Gate Drive Voltages vs
Supply Voltage
Gate Drive Voltages vs
Load Current
Gate Fault Pull-Down Currents vs
Supply Voltage
6
5
4
3
2
1
0
6.0
5.8
5.6
5.4
5.2
5.0
30
25
20
15
10
5
GATE DRIVE = V – V
PIN
MGATE, RSGATE, SGATE1, SGATE2 PINS
MGATE, RSGATE, SGATE1, SGATE2 PINS
CC
SGATE1,
SGATE2 PINS
FAST PULL-UP
MODE
MGATE, RSGATE,
SGATE1, SGATE2 PINS
PULL-UP MODE
GATE DRIVE = V – V
PIN
CC
FAULT LATCH SET
I
= –1µA
GATE
0
0
5
10
15
20
25
30
35
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
(V)
I
(µA)
V
(V)
V
LOAD
CC
CC
2926 G06
2926 G05
2926 G07
MGATE, RSGATE Fault Pull-Down
Currents vs Temperature
SGATE Fault Pull-Down Current vs
Temperature
30
25
20
15
10
5
30
25
20
15
10
5
MGATE, RSGATE PINS
SGATE1, SGATE2 PINS
V
= 5.5V
V
= 5.5V
CC
CC
V
= 3.3V
= 2.9V
V
= 3.3V
= 2.9V
CC
CC
FAULT LATCH SET
V
V
CC
FAULT LATCH SET
CC
0
–50
0
–50
–25
0
25
50
75
100
–25
0
25
50
75
100
TEMPERATURE (°C)
TEMPERATURE (°C)
2926 G08
2926 G09
2926fa
5
LTC2926
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Specifications are at T = 25°C, V = 3.3V
A
CC
unless otherwise specified.
RAMPBUF Output Low Voltage vs
Temperature
RAMPBUF Output High Voltage vs
Temperature
Logic Output Low Voltages vs
Supply Voltage
50
40
30
20
10
0
100
80
60
40
20
0
250
200
150
100
50
I
= 3mA
I
V
= –3mA
RAMPBUF
OH
RAMPBUF
= V – V
CC RAMPBUF
STATUS/PGI PIN
V
= 2.9V
CC
I
= 5mA
STATUS/PGI
V
= 2.9V
CC
V
= 5.5V
CC
V
= 5.5V
CC
FAULT PIN
I
= 5mA
FAULT
0
–50
–25
0
25
50
75
100
–50
–25
0
25
50
75
100
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
(V)
TEMPERATURE (°C)
TEMPERATURE (°C)
V
CC
2926 G10
2926 G11
2926 G12
2926fa
6
LTC2926
U
U
U
PI FU CTIO S GN/UFD Packages
to the slave supply, the FB pins will not force the slave’s
feedback node above 2.4V. In addition, it will not actively
sink current even when the LTC2926 is not powered. Tie
unused FB pins to GND.
D1, S1, D2, S2 (Pins 6, 4, 15, 17/Pins 4, 2, 13, 15):
Remote Sense Switches #1 and #2. A 10Ω (max) switch
connectseachpairofpins(D1/S1andD2/S2)afterMGATE,
SGATE1 and SGATE2 are all fully enhanced (MGATE >
RAMP + 4.9V or RAMP > V , and SGATE1, SGATE2 >
CC
GND (Pin 10/Pin 8): Device Ground.
V
+ 4.9V). The switch can be used to compensate for
CC
MGATE (Pin 12/Pin 10): Master Gate Drive for External
N-Channel MOSFET/Master Ramp. When the ON pin is
high, an internal 10µA current charges the gate of an
external N-channel MOSFET. A capacitor from MGATE
to GND sets the master ramp rate. Add a 10Ω resistor
between the capacitor and the MOSFET’s gate to prevent
high frequency oscillations. An internal charge pump
guarantees that the MGATE pin voltage will pull up to
thevoltagedropacrosstheexternalMOSFETthatcontrols
a slave or the master supply. Connect the switch between
the load and the supply’s sense node. Before the external
MOSFET is fully enhanced, a resistor between the supply’s
output and sense nodes provides local feedback. When
the ON pin voltage is low, the switch will open before the
MGATE, SGATE1 and SGATE2 pins will ramp down. Leave
unused switch terminal pairs unconnected.
5.5V above V , which ensures that logic-level N-channel
CC
Exposed Pad (Pin 21, UFD Package Only): Exposed pad
may be left open or connected to device GND.
MOSFETs are fully enhanced. When the ON pin is pulled
low, the MGATE pin is pulled to GND by a 10µA current
source. Upon a fault condition, the MGATE pin is pulled
low immediately with 20mA. To create a master ramp
signal without an external MOSFET, tie the MGATE pin to
the RAMP pin. A weak internal clamp on the RAMP pin
FAULT (Pin 9/Pin 7): Negative-Logic Fault Input/Output.
Under normal conditions the internal fault latch is not set
andan8.5µAcurrentpullsupFAULTtoadiodedropbelow
V . When the voltage at FAULT is pulled below 0.5V, a
CC
limits MGATE to V + 1V in this case. Leave the MGATE
fault condition is latched and an internal N-channel MOS-
FET pulls FAULT to GND until the latch is reset. The fault
condition also pulls STATUS/PGI low, opens the remote
sense switches, and pulls MGATE, SGATE1 and SGATE2
to GND to disconnect the master and slave supplies from
their loads. Pulling STATUS/PGI below 1V after the power
good time-out delay also latches a fault. The fault latch is
CC
pin unconnected if it is unused.
ON (Pin 7/Pin 5): On Control Input. The ON pin has
a threshold of 1.23V with 75mV of hysteresis. A high
causes 10µA to flow out of the MGATE pin, ramping up
the supplies. A low causes 10µA to flow into the MGATE
pin, ramping down the supplies. Pull the ON pin below
0.5V to reset the fault latch. Pull the ON pin above 0.6V
after a fault latch reset to arm the fault latch.
reset when the ON pin voltage is below 0.5V, or when V
CC
is undervoltage. The fault latch is armed when the ON pin
voltage exceeds 0.6V. To auto-retry after a fault, connect
FAULT to the ON pin. Leave the FAULT pin unconnected
if it is unused.
PGTMR (Pin 8/Pin 6): Power Good Timer. Connect an
external capacitor between PGTMR and GND to set the
Power Good Time-Out Delay. When the ON pin is above
FB1, FB2 (Pins 3, 18/Pins 1, 16): Feedback Control In-
put/Outputs. Each FB pin connects to the feedback node
of a slave supply. Connect an FB pin to the tap point of a
resistive voltage divider between the source (load side)
of the external MOSFET and GND. For a slave supply with
an accessible feedback path, no external MOSFET may
be necessary. In that case, connect an FB pin to the tap
point of a resistive voltage divider between the supply
generator’s feedback node and GND. To prevent damage
1.23V, a 10µA current pulls up PGTMR to V , otherwise
CC
an internal N-channel MOSFET pulls PGTMR to GND. If
the voltage on PGTMR exceeds 1.23V and the voltage
on STATUS/PGI is not above 1.23V, a fault condition is
latched,theremotesenseswitchesareopened,andFAULT,
STATUS/PGI, MGATE, SGATE1, SGATE2 and RSGATE will
be immediately pulled to GND. To disable the Power Good
Timer tie PGTMR to GND.
2926fa
7
LTC2926
U
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PI FU CTIO S GN/UFD Packages
RAMP (Pin 11/ Pin 9): Ramp Buffer Input. Connect the
RAMP pin to the master ramp signal to force the slave
supplies to track it. When the RAMP pin is connected to
the source of an external N-channel MOSFET, the slave
supplies track the MOSFET’s source, the master supply
voltage, as it ramps up and down. When a master supply
is not required, the RAMP pin can be tied directly to the
MGATEpintoformamasterrampvoltage.Inthisconfigura-
tion, the supplies track the capacitor on the MGATE pin as
it is charged and discharged by the 10µA current source
that is controlled by the ON pin. The RAMP pin is weakly
SGATE1,SGATE2(Pins5,16/Pins3,14):SlaveGateCon-
trollers for External N-Channel MOSFETs. Each SGATE pin
ramps a slave supply by controlling the gate of an external
N-channel MOSFET so that its source terminal follows the
tracking profile set by external resistors and the master
ramp. It is a good practice to add a 10Ω resistor between
this pin and the MOSFET’s gate to prevent high frequency
oscillations. An internal charge pump guarantees that the
SGATE pin voltage will pull up to 5.5V above V , which
CC
ensures that logic-level N-channel MOSFETs are fully
enhanced. Leave unused SGATE pins unconnected.
clamped to V + 1V. Do not drive RAMP above V with
CC
CC
STATUS/PGI (Pin 14/Pin 12): Status Output/Power Good
Input. A 10µA current pulls up STATUS/PGI when MGATE,
SGATE1 and SGATE2 are fully enhanced, and the remote
senseswitchesareclosed,otherwiseaninternalN-channel
MOSFET pulls down STATUS/PGI. If the STATUS/PGI pin
is pulled below 1V after the power-good time-out delay
(see PGTMR pin description), the fault latch is set, and
MGATE, SGATE1, SGATE2 and RSGATE are all pulled low
immediately. An internal charge pump guarantees that the
a low impedance source to avoid sinking large currents
into the pin. Ground the RAMP pin if it is unused.
RAMPBUF (Pin 20/Pin 18): Ramp Buffer Output. The
RAMPBUF pin provides a low impedance buffered ver-
sion of the signal on the RAMP pin. This buffered output
drives the resistive voltage dividers that connect to the
TRACK pins. Limit the capacitance at the RAMPBUF pin
to less than 100pF.
STATUS/PGI pin voltage will pull up to 5.5V above V .
CC
RSGATE (Pin 13/Pin 11): Gate Drive for Internal and
External N-Channel MOSFET Remote Sense Switches. A
remote sense path between a load and the sense input of
itssupplygeneratorautomaticallycompensatesforvoltage
drops across the tracking MOSFET. After the series MOS-
FETs are fully enhanced, a 10µA current pulls up RSGATE.
An internal charge pump guarantees that RSGATE will
An external pull-up resistor may be added to limit the
STATUS/PGIvoltagetologiclevels.LeavetheSTATUS/PGI
pin unconnected if it is unused.
TRACK1,TRACK2(Pins2,19/Pins20,17):TrackingCon-
trol Inputs. A resistive voltage divider between RAMPBUF
and each TRACK pin determines the tracking profile of
each supply channel. Each TRACK pin pulls up to 0.8V,
and the current supplied at TRACK is mirrored at FB. The
TRACK pins are capable of supplying at least 1mA when
pull up to 5.5V above V , which ensures that logic-level
CC
N-channel MOSFETs are fully enhanced. When the voltage
atRSGATEexceedsV +4.9V,theSTATUS/PGIpull-down
CC
is released. When the ON pin is low, a 10µA current source
pulls RSGATE to GND. Supplies will not track down until
the RSGATE pin voltage falls below 1.23V, which ensures
that the remote sense switches open before the loads are
disconnected. Connect RSGATE to the gates of additional
externalN-channelMOSFETstocreatemoreremotesense
switches. Upon a fault condition, the RSGATE pin is pulled
low immediately with 20mA. Optionally connect a capaci-
tor between RSGATE and GND to set the switch-on rate
or to add delay between switch closure and STATUS/PGI
assertion. Leave RSGATE unconnected if it is unused.
V
= 2.9V. They may be capable of supplying up to 10mA
CC
when the supply is at 5.5V, so care should be taken not to
short this pin for extended periods. Limit the capacitance
at the TRACK pins to less than 25pF. Leave unused TRACK
pins unconnected.
V
(Pin 1/Pin 19): Positive Voltage Supply. Operating
CC
rangeisfrom2.9Vto5.5V. Anundervoltagelockoutresets
the part when the supply is below 2.4V. V should be
bypassed to GND with a 0.1µF capacitor.
CC
2926fa
8
LTC2926
U
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FU CTIO AL BLOCK DIAGRA
V
CC
+
–
2.4V
UVLO
FAST PULL-DOWN
V
CC
CLEAR/ARM
SIGNAL LATCH
V
CC
ON
+
–
R
8.5µA
FAULT LATCH
R
DELAY
CLR/ARM
0.6V
0.5V
S
Q
FAULT
FAULT
+
–
S
Q
DELAY
+
–
1.23V
+
–
0.5V
V
CC
10µA
+
–
0.1V
PGTMR
UVLO
+
–
PGTMR HIGH
1.23V
1.23V
CHARGE
PUMP
+
–
10µA
PGI LOW
STATUS/PGI
+
–
UVLO
RSGATE
V
+ 4.9V
CC
CHARGE
PUMP
+
–
10µA
RSGATE
1.23V
GATE UP
MGATE
+
–
FAST
PULL-DOWN
MGATE
10µA
RAMP + 4.9V
+
–
RAMP
CHARGE
PUMP
V
CC
10µA
RSGATE UP
RSGATE
+
–
SGATE1
+ 4.9V
V
V
CC
FAST
PULL-DOWN
10µA
+
–
SGATE2
+ 4.9V
CC
D1
S1
S2
D2
CHARGE
PUMP
V
CC
SGATE2
SGATE1
10µA/30µA
+
–
0.8V
UP/DOWN
V
CC
FAST
PULL-DOWN
+
–
0.8V
10µA/30µA
TRACK2
TRACK1
FB2
FB1
RAMPBUF
RAMP
1x
GND
2926 BD
2926fa
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LTC2926
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APPLICATIO S I FOR ATIO
Power Supply Tracking and Sequencing
Operation
The LTC2926 handles a variety of power-up profiles to
satisfy the requirements of digital logic circuits including
FPGAs, PLDs, DSPs and microprocessors. These require-
mentsfallintooneofthefourgeneralcategoriesillustrated
in Figures 1 to 4.
The LTC2926 provides a simple solution to allow all of
the power supply tracking and sequencing profiles shown
in Figures 1 to 4. A single LTC2926 controls up to three
supplies:two“slave”suppliesthattracka“master”signal.
WithjustfourresistorsandanexternalN-channelMOSFET,
each slave supply is configured to ramp up and down as
a function of the master signal. This master signal can
be a third supply that is ramped up through an external
MOSFET, whose ramp rate is set with a single capacitor,
or it can be a signal generated by tying the MGATE and
RAMP pins together to an external capacitor.
Some applications require that the potential difference
between two power supplies must never exceed a speci-
fied voltage. This requirement applies during power-up
and power-down as well as during steady-state operation,
often to prevent destructive latch-up in a dual supply IC.
Typically, this is achieved by ramping the supplies up
and down together (Figure 1). In other applications it is
desirable to have the supplies ramp up and down ratio-
metrically (Figure 2) or with fixed voltage offsets between
them (Figure 3).
Tracking Cell and Gate Controller Cell
The LTC2926’s operation is based on the combination of
a tracking cell and a gate controller cell that is shown in
Figure 5. The tracking cell servos the TRACK pin at 0.8V,
andthecurrentsuppliedbytheTRACKpinismirroredatthe
FB pin. The gate controller cell servos the FB pin at 0.8V by
Certain applications require one supply to come up after
another. For example, a system clock may need to start
before a block of logic. In this case, the supplies are se-
quenced as in Figure 4, where the 1.8V supply ramps up
completely followed by the 2.5V supply.
driving the gate of the external N-channel MOSFET (Q ),
EXT
and establishes the slave output voltage at the source of
theMOSFETbasedontheTRACKpincurrentandresistors
MASTER
SLAVE2
SLAVE2
SLAVE1
SLAVE1
500mV/DIV
500mV/DIV
2926 F01
2926 F02
5ms/DIV
5ms/DIV
Figure 1. Coincident Tracking
Figure 2. Ratiometric Tracking
MASTER
SLAVE2
SLAVE2
SLAVE1
SLAVE1
500mV/DIV
500mV/DIV
2926 F03
2926 F04
5ms/DIV
5ms/DIV
Figure 3. Offset Tracking
Figure 4. Supply Sequencing
2926fa
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LTC2926
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APPLICATIO S I FOR ATIO
Q
EXT
SUPPLY
SLAVE
LTC2926
TRACKING CELL
GATE CONTROLLER CELL
V
CC
V
+ 5V
CC
10µA
0.8V
+
–
SGATE
+
–
0.8V
10µA
MASTER
RAMP
R
R
FB
FA
TB
TA
TRACK
FB
I
I
FB
TRACK
R
R
2926 F05
Figure 5. Simplified Tracking Cell and Gate Controller Cell Combination
R and R . The slave output voltage varies as a function
The rising master signal decreases the tracking current
mirrored out of the FB1 pin. The gate controller circuitry
maintains 0.8V at FB1 by driving the SGATE1 voltage and,
via the external MOSFET source-follower, the slave supply
output. When the slave supply output reaches the slave
supply module voltage, the FB1 pin will fall below 0.8V
and the gate controller will drive the SGATE1 pin above
FA
FB
of the master signal with terms set by R and R . By
TA
TB
selecting appropriate values of R and R , it is possible
TA
TB
to generate any of the profiles in Figures 1 to 4.
Controlling the Ramp-Up and Ramp-Down Behavior
TheoperationoftheLTC2926ismosteasilyunderstoodby
referring to the simplified functional diagram in Figure 6.
WhentheONpinislow,theremotesenseswitchisopened
and the MGATE pin is pulled to ground causing the master
V
to fully enhance the MOSFET.
CC
After the MGATE, SGATE1 and SGATE2 pins reach their
maximum voltages, the RSGATE pin is pulled up by a
10µA current source from an internal charge pump,
which closes the integrated remote sense switches. The
integrated remote sense switch allows the slave supply
generatortocompensateforvoltagedropacrosstheslave’s
MOSFET (Q1).
signal to remain low. Since the current through R is at
TB1
its maximum when the master signal is low, the current
sourced by FB1 is also at its maximum. The current forces
the FB1 pin voltage above 0.8V, which pulls the SGATE1
pin low and disconnects the slave’s supply generator. The
minimum voltage across the slave load is a function of the
maximum FB1 current, the feedback divider resistors, and
the load resistance (see Load Requirements).
When the ON pin falls below V
– ΔV , typically
ON(TH)
ON(TH)
1.16V, the remote sense switch opens and the MGATE pin
pulls down with 10µA. The master signal and the slave
supplies will fall at the same rate as they rose previously,
following the tracking or sequencing profile in reverse.
When the ON pin rises above 1.23V, the master signal
ramps up, and the slave supply tracks the master signal.
The master ramp rate is set by an external capacitor driven
by a 10µA current source from an internal charge pump. If
noexternalMOSFETisusedforthemastersignal,theramp
rate is set by tying the MGATE and RAMP pins together
at one terminal of the external capacitor (see Ratiometric
Tracking Example or Supply Sequencing Example). The
The ON pin can be controlled by a digital I/O pin or it
can be used to monitor an input supply. By connecting a
resistive voltage divider from an input supply to the ON
pin, the supplies will ramp up only after the monitored
supply reaches a preset voltage.
MGATE pin voltage will be limited to V + 1V (max) by
CC
the weak internal clamp on the RAMP pin.
2926fa
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LTC2926
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APPLICATIO S I FOR ATIO
SUPPLY MODULE
Q0
OUT
MASTER
SLAVE1
C
MGATE
SUPPLY MODULE
OUT
Q1
R
X1
SENSE
V
CC
MGATE
RAMP
REMOTE SENSE SWITCH
D1
S1
MGATE
+
–
RAMP + 4.9V
SGATE1
CHARGE
PUMP
10µA
10µA
+
–
TO
RSGATE
PIN
V
+ 4.9V
CC
SGATE2
+ 4.9V
+
–
V
CC
CHARGE
PUMP
10µA
10µA
ON
ON/OFF
+
–
1.23V
RAMPBUF
1x
V
CC
CHARGE
PUMP
10µA
10µA
0.8V
+
SGATE1
FB1
0.8V
+
–
–
R
R
R
R
TB1
FB1
TRACK1
GND
TA1
FA1
2926 F06
Figure 6. Simplified Functional Block Diagram
Optional Master Supply MOSFET
the MGATE pin. The series MOSFET controls any supply
with an output voltage between 0V and V .
CC
Figure 7 illustrates how an optional external N-channel
MOSFET(deviceQ0)canrampupasupplythatdoublesas
themastersignal. TheMOSFET’sgateistiedtotheMGATE
pin and its source is tied to the RAMP pin. The MGATE pin
sources or sinks 10µA to ramp the MOSFET’s gate up or
down at a rate set by the external capacitor connected to
To compensate for voltage drop across the master supply
MOSFET, add an optional external remote sense switch
(device Q3 in Figure 7) connected between RAMP and the
sense input of the master voltage supply module. Tie the
gate of the external switch MOSFET to the RSGATE pin
for automatic remote sense switching.
2926fa
12
LTC2926
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APPLICATIO S I FOR ATIO
3.3V MODULE
1.8V MODULE
IN OUT
IN
Q0
Q1
1.8V
SLAVE1
V
IN
V
IN
V
IN
IN OUT
MASTER
V
R
X0
R
X1
R
X2
R
R
X1
Q3
SENSE
SENSE
10Ω
10Ω
1.8V MODULE
IN OUT
2.5V MODULE
IN OUT
Q1
Q2
1.8V
SLAVE1
2.5V
V
IN
SLAVE2
C
MGATE
X2
NC
SENSE
SENSE
10Ω
10Ω
RSGATE MGATE RAMP SGATE1 SGATE2
2.5V MODULE
IN OUT
D1
D2
Q2
2.5V
SLAVE2
C
MGATE
V
V
CC
S1
S2
IN
0.1µF
SENSE
10Ω
RAMPBUF
R
R
R
R
TB1
FB1
RSGATE MGATE RAMP SGATE1 SGATE2
TRACK1
FB1
FB2
D1
D2
LTC2926
FA1
TA1
R
R
TB2
R
R
FB2
V
V
CC
S1
S2
IN
0.1µF
TRACK2
V
IN
RAMPBUF
TA2
FA2
R
R
R
R
V
TB1
FB1
IN
10k
TRACK1
FB1
FB2
FAULT
FAULT
ON
LTC2926
10k
FA1
TA1
STATUS/PGI
STATUS
ON/OFF
R
R
GND
PGTMR
TB2
R
R
FB2
2926 F08
TRACK2
FAULT
C
V
IN
PGTMR
TA2
FA2
V
IN
10k
FAULT
Figure 8. Typical Application Without Master Supply
10k
STATUS/PGI
STATUS
ON/OFF
ON
GND
PGTMR
2926 F07
currentpullstheFAULTpinvoltagehigh.Whenanupstream
monitor signal pulls FAULT below 0.5V, the LTC2926’s
internal fault latch is set, which immediately opens the
remote sense switches and cuts off the master and slave
supplies by pulling MGATE, SGATE1 and SGATE2 to GND.
AfaultalsoactivatestheinternalMOSFETpull-downonthe
STATUS/PGI pin, which indicates to external downstream
monitoring circuits that the supplies are no longer valid
(see Status Output). Until the fault latch is reset, the sup-
plies stay disconnected and an internal pull-down keeps
the FAULT pin low as a signal to upstream monitors.
C
PGTMR
Figure 7. Typical Application with Master Supply
Ramp Buffer
TheRAMPBUFpinprovidesabufferedversionoftheRAMP
pin voltage that drives the resistive dividers on the TRACK
pins.WhenthereisnoexternalMOSFET,itsourcesorsinks
up to 3mA to drive the track resistors even though the
MGATE pin only supplies 10µA (Figure 8). The RAMPBUF
pinalsoprovesusefulinsystemswithanexternalMOSFET.
If R
were directly connected to the MOSFET’s source
TBn
Fault latch reset is initiated by bringing the ON pin voltage
below0.5V, andcompletedwhenPGTMRis<0.1V. Reduc-
(the master output), the servo mechanism of the tracking
cellcouldpotentiallydrivethemasteroutputtowards0.8V
when the MOSFET is off. The ramp buffer prevents this
by eliminating that path for current.
ing the V pin voltage below V
– ΔV
,
CC
CC(UVLO)
CC(UVLO)
typically 2.35V, also resets the fault latch. After it is
cleared, the fault latch is armed by bringing the ON pin
voltage above 0.6V. No faults can be latched until after
the latch is armed.
Fault Input/Output
TheFAULTpinallowsexternalupstreammonitoringcircuits
to control and to communicate with the LTC2926. The pin
is driven internally by an N-channel MOSFET pull-down
The FAULT pin is pulled up by 8.5µA to V through a
CC
Schottky diode, which allows the pin to be pulled safely
above the LTC2926’s supply if required. Leave the FAULT
pin unconnected if it is unused.
to GND, and by an 8.5µA pull-up to V through a series
CC
diode.Undernormalconditions,theMOSFETisoffandthe
2926fa
13
LTC2926
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APPLICATIO S I FOR ATIO
Status Output
timeallotted.Ifsupplyrampingcompletes,anydownstream
circuits that pull down the STATUS/PGI pin after the timer
duration also will trip the timeout circuit. A fault caused
by a power good timeout has the same effect as a fault
triggered by the FAULT pin: supplies are disconnected
and the fault latch is set. The fault latch may be cleared as
described in the Fault Input/Output section above.
The output aspect of the STATUS/PGI pin allows the
LTC2926 to control and communicate with external
downstream circuits. The pin is driven internally by an
N-channel MOSFET pull-down to GND and a 10µA pull-
up to an internal charge pump. The pull-down keeps the
STATUS/PGI pin low until MGATE, SGATE1 and SGATE2
are fully enhanced, and the remote sense switches are
closed. The pull-down then shuts off, and STATUS/PGI
pin rises, indicating to downstream monitors that the
supplies are fully ramped up. The STATUS/PGI pin pulls
low when the MGATE, SGATE1, SGATE2 or RSGATE pin
is low, either because a fault has been latched, or because
the ON pin is low.
Thepowergoodtimerdurationisconfiguredbyacapacitor
tied between PGTMR and GND. The pin’s 10µA current
source ramps up the capacitor voltage when the ON pin is
high, otherwise 4mA pulls PGTMR to GND. The capacitor,
C
, required to configure the power good timeout
PGTMR
duration, t
, is determined from:
PGTMR
10µA • tPGTMR
CPGTMR
=
An internal charge pump rail at V + 5.5V sources the
CC
1.23V
STATUS/PGI pull-up current. An external resistor may be
added to create logic level voltages, or the pin may be
used to enhance the gates of external N-channel MOSFET
switches, if desired.
If the power good timeout feature is not used, tie PGTMR
to GND.
Retry on Fault
Power Good Timeout
TheLTC2926continuouslyattemptstorampupthesupplies
after a fault if the FAULT pin is tied to the ON pin. When
the FAULT and ON pins go low together, the internal fault
latch is set by the falling FAULT pin, and the fault latch is
reset by the falling ON pin. A short internal delay of several
microseconds guarantees triggering of fast pull-down
circuits on the RSGATE, MGATE, SGATE1 and SGATE2
pins, which opens the remote sense switches and discon-
nects the master and slave supplies before the fault latch
is reset. If no external signal pulls down the FAULT pin,
the internal 8.5µA pull-up current or an external pull-up
resistor increases the ON (and FAULT) pin voltage above
0.6V, which arms the fault latch. A ramp-up begins when
ON is above 1.23V.
The input aspect of the STATUS/PGI pin allows external
downstreammonitoringcircuitstocontroltheLTC2926as
showninFigure9. Thepowergoodtimeoutcircuitdiscon-
nects the supply generators if for any reason the voltage
level of the STATUS/PGI pin is not high after the timeout
period. During a ramp-up, the timeout circuit will trip if the
internal pull-down on STATUS/PGI fails to release, which
indicates that supply ramping was not completed in the
Q1
1.8V
1.8V
SOURCE
SLAVE1
10Ω
Q2
2.5V
2.5V
SOURCE
SLAVE2
LTC2904
V2
V1
S2
10Ω
In applications where the LTC2926 is configured for fault
retry, some details of the retry behavior are determined by
the source and duration of the fault signal. When a fault
is triggered by an external pull-down signal on the FAULT
(and ON) pin, supply ramping will not restart until the low
input ceases. When a power good fault is triggered by an
external pull-down signal on the STATUS/PGI pin, supply
ramping restarts immediately. If the low signal persists
RST
RST
GND
R
R
SGATE1 SGATE2
FB1
FB1
S1
ON/OFF
ON
TOL
FA1
LOAD VOLTAGE
MONITOR
(10% TOLERANCE)
LTC2926
STATUS/PGI
R
R
FB2
FB2
GND PGTMR
2926 F09
FA2
C
PGTMR
Figure 9. External Load Monitor Controlling LTC2926 via Power
Good Input
2926fa
14
LTC2926
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APPLICATIO S I FOR ATIO
through the power good timeout period, a fault and retry
will subsequently occur.
Automatic Remote Sense Switching
The LTC2926 provides integrated remote sense switches
thatsolvetheproblemofvoltagedropsintheexternalseries
MOSFETs that control supply ramping. A switch creates
a feedback path from a slave supply output to the slave
supply generator sense input that allows the generator
to compensate for the I • R drop across the controlling
MOSFET (see, for example, Figure 6). After the supply
ramping is complete, but before the internal pull-down
releases the STATUS/PGI pin, the two integrated remote
sense switches are closed.
To ensure a consistent power good timeout period, the
LTC2926requiresthePGTMRpinvoltagetofallbelow0.1V
forthefaultlatchresettocomplete.TheONpinneedstobe
held low for only 10µs to initiate fault reset; it is allowed to
go high while the timing capacitor on PGTMR discharges
to 0.1V (see Functional Block Diagram).
When a resistive voltage divider drives the ON and FAULT
pins together, include the contribution of I
choosing the resistor values (Figure 10a). When a logic
output drives both pins, up to 30kΩ of series resistance
may be added to limit the output current while the fault
pull-down is active (Figure 10b).
when
FAULT(UP)
For applications that require more than two remote sense
switches,connecttheRSGATEpintothegatesofadditional
external N-channel MOSFETs. An internal charge pump
guarantees that RSGATE will reach V + 5.5V, which al-
lowsfullenhancementoflogic-levelMOSFETswithsource
CC
V
IN
or drain voltages up to V .
LTC2926
CC
V
CC
R
ONB
V
ON
ON
The switches are open when supply ramping has not
completed to avoid creating a power path between the
supply generator and the load. When the remote sense
switchesareopen,thesupplygenerator’ssenseinputmust
be connected locally to its output through a resistor that
is much larger than the remote sense switch resistance
of 10Ω (max); a 100Ω resistor is adequate for most ap-
plications as in Figure 7.
V
CC
R
ONA
I
FAULT(UP)
FAULT
FAULT LATCH
R
ONA
|| R
Q
S
R
ONA
V
=
• V
IN
ON
R
+ R
ONB
GND
+ (R
ONA
) • I
ONB
FAULT(UP)
Some supply modules have built-in resistors of 10Ω or
less between their out and sense pins, which may require
a lower switch resistance. Choose an external N-channel
(a)
V
V
IN
MOSFET with an R
that is at most 1/10 the module
DS(on)
LTC2926
out-to-sense resistance, but that is still much larger than
the R of the power path MOSFET.
CC
R
SERIES
ON
DS(on)
V
CC
I
OUT
If neither external remote sense switches nor a sta-
tus activation delay is required, leave the RSGATE pin
unconnected.
I
FAULT(UP)
FAULT
FAULT LATCH
Q
S
R
LIMIT I
OUT
SERIES
WITH R
SERIES
R
≤ 30kΩ
GND
2926 F10
(b)
Figure 10. Fault Retry Configurations, (a) Resistive Voltage
Divider and (b) Logic Driven
2926fa
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SUPPLY
MODULE
To minimize switch current, choose R >> R . In appli-
+ V
–
X
DS
DS
Q0
MASTER
SUPPLY
cations that use the LTC2926’s integrated remote sense
OUT
switches, I must not exceed the Absolute Maximum
SW
LOAD
R
Ratings for switch pin currents.
X
MGATE
I
Q3
SW
SENSE
It is recommended design practice to satisfy both
resistance value conditions.
RSGATE
SGATE Voltage at Ramp Start/End
(a)
When the master ramp is 0V (before ramp up or after
ramp down), the control MOSFET ideally conducts no
current. If the tracking profile has no delay or offset, the
gate control loops may force the SGATE pins either to
ground or to just below the MOSFET threshold voltage,
depending on reference offsets, resistor mismatches and
the load resistance. In both cases the slave load will be at
about 0V, but if a known state of SGATE is desired, include
an offset in the tracking profile.
+ V
R
–
DS
V
V
SUPPLY
OUT
DS
I
L
R
X
R
I
SW
SW
V
SENSE
(b)
2926 F11
Figure 11. Supply and Sense Path Detail, (a) Functional Diagram
and (b) Equivalent Circuit When Remote Sense Switch Is Closed
To guarantee grounding of the SGATE pins at RAMP = 0V,
Considerations when Using Remote Sense Switches
includeapositiveoffset,V ,basedonthemaximumslave
OS
Consider the supply and sense path detail functional
diagram and equivalent circuit in Figure 11. For proper
compensation of the I • R drop across the external control
MOSFET Q0 by the supply module, the voltage at its sense
pin input must be equal to the supply voltage at the load.
supply voltage, V
(max), and the tracking/feedback
SLAVE
resistor tolerance. Note that at the start of ramp up, the
gate capacitance of the MOSFET must be charged to the
threshold voltage before the source begins ramping. The
SGATE pins do provide extra current to speed the initial
charging.
Solving for V
in the equivalent circuit yields:
SENSE
Calculate the required V from:
OS
⎛
⎞
⎛
⎞
RSW
RX
R +R
VSENSE
=
• VSUPPLY
+
• VOUT
V
OS
≥ k • V
(max)
SLAVE
⎜
⎟
⎜
⎟
R +R
⎝
⎠
⎝
⎠
X
SW
X
SW
For 1% resistors k = 1/8, for 5% resistors k = 1/4, for
10% resistors k = 2/5.
For the best compensation, i.e., V
≈ V
, choose
SUPPLY
SENSE
R >> R
.
X
SW
To guarantee the SGATE pins sit at the MOSFET threshold
voltages at RAMP = 0V, include a negative offset. Note that
when the master ramp goes to 0V, the slave supplies will
remain above ground by the magnitude of the offset.
The remote sense switch is intended to be a low-current
voltage feedback path. The control MOSFET (Q0 in Figure
11a) should carry all but a tiny fraction of the entire load
current. The remote sense switch current is:
Calculate the required V from:
OS
⎛
⎞
RDS
V
OS
≤ –k • V
(max)
SLAVE
ISW =ILOAD
•
⎜
⎟
R +RSW +RDS
⎝
⎠
X
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Q0
If the master ramp signal is not a master supply, tie the
RAMP pin to the MGATE pin.
V
IN
MASTER
SLAVE1
SUPPLY MODULE
Q1
V
IN
IN OUT
SENSE
R
X1
10Ω
2. Choose the feedback resistors based on the slave
supply voltage and slave load.
10Ω
SUPPLY MODULE
It is important that the feedback resistors are significantly
larger than the load resistance, especially as the slave
voltage nears ground (see Load Requirements).
Q2
SLAVE2
V
IN OUT
IN
0.1µF
C
MGATE
R
X2
SENSE
10Ω
V
MGATE RAMP SGATE1 SGATE2
First determine the effective slave load resistance, R (not
CC
L
D1
D2
shown), at low slave voltage levels, and select the value
S1
S2
of the top feedback resistor, R , to satisfy:
FB
RAMPBUF
R
TB1
R
R
FB1
R
FB
R
FB
≥ 100 • R (recommended),
L
TRACK1
FB1
R
TA1
LTC2926
FA1
≥ 23 • R (required)
(2)
L
R
R
TB2
R
R
FB2
TRACK2
FAULT
FB2
Second, determine a value for the lower feedback resistor,
V
IN
TA2
FA2
V
R , that will ensure that the LTC2926 fully enhances the
IN
FA
10k
gate of the slave control MOSFET at the end of ramping.
FAULT
10k
STATUS/PGI
STATUS
ON/OFF
ON
GND
PGTMR
Select R based on R , the resistor tolerance, TOL , and
FA
FB
R
2926 F12
the maximum slave supply voltage, V
(max):
SLAVE
C
PGTMR
⎛
⎝
⎞
⎠
V
SLAVE(max)
0.784V
1− TOLR
⎛
⎞
⎠
Figure 12. Three-Supply Application
RFA <RFB •
−1
(3)
⎜
⎝
⎟
⎜
⎟
1+ TOL
R
Three-Step Design Procedure
The following three-step design procedure allows one
to choose the FBn resistors, R and R , the TRACKn
Note: Choose the value of V
(max) to cover all slave
SLAVE
supplyvoltagetolerancesbyagoodmargin.Exceedingthe
FAn
FBn
V
(max) voltage used for this calculation can result in
SLAVE
resistors, R and R , and the master ramp capacitor,
TAn
TBn
triggering a Power Good Fault unintentionally.
C
,thatgiveanyofthetrackingorsequencingprofiles
MGATE
shown in Figures 1 to 4. A three-supply application circuit
If the slave generator has an accessible resistive divider
and a ground-based voltage reference, it may be able to
be controlled without a series MOSFET. In that case, let
is shown in Figure 12.
1. Set the ramp rate of the master signal.
the generator’s design set R and R , substitute the
FA
FB
FB(REF)
Solve for the value of C
, the capacitor on the MGATE
generator’s reference voltage for V
in step 3, and
MGATE
pin, based on the desired ramp rate (volts per second)
of the master ramp signal, S , and the MGATE pull-up
see the subsection Slave Control Without MOSFETs.
M
3. Solve for the tracking resistors that set the desired
ramp rate and voltage offset or time delay of the slave
supply.
current I
, which is nominally 10µA.
MGATE
IMGATE
SM
(1)
CMGATE
=
Choose a ramp rate for the slave supply, S . If the slave
S
supply tracks coincidently with the master supply or with
only a fixed offset or delay, then the slave ramp rate equals
the master ramp rate. Be sure that the slave ramp rate and
itsoffsetordelayallowstheslavevoltagetofinishramping
If the master ramp signal is a master supply, consider
the gate capacitance of the required external N-channel
MOSFET. If the gate capacitance is comparable to C
,
MGATE
reduce the external capacitor’s value to compensate for
the gate capacitance of the MOSFET.
2926fa
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MASTER
SLAVE2
SLAVE1
500mV/DIV
500mV/DIV
2926 F13
5ms/DIV
5ms/DIV
Figure 13. Coincident Tracking Waveforms from Figure 14 Circuit
before the master ramp reaches its final value; otherwise,
the slave supply voltage will be held below its intended
Coincident Tracking Example
A typical three-supply application is shown in Figure 14.
The master signal is 3.3V, the slave 1 supply is a 1.8V
module, and the slave 2 supply is a 2.5V module. Allow for
10% tolerance of the slave supply voltages. Both slave
supplies track coincidently with the 3.3V master supply
that is controlled by an external MOSFET. The ramp rate of
the supplies is 100V/s. The slave supplies’ minimum load
resistancesare150Ω.Theexternalconfigurationresistors
level. Calculate the upper track resistor, R , from:
TB
⎛
⎞
SM
RTB =RFB •
(4)
⎜
⎟
S
⎝
⎠
S
Choose a voltage difference between the master and slave
ramps, ΔV, if offset tracking is desired. If a time delay is
desired for supply sequencing, calculate an effective volt-
age difference based on the master ramp rate. If neither
voltage offset nor time delay is required, set ΔV = 0V.
Q0
IRF7413Z
3.3V
3.3V V
IN
MASTER
Q1
1.8V MODULE
IN OUT
IRF7413Z
1.8V
SLAVE1
ΔV = a voltage difference (offset tracking), or
ΔV = S • t (supply sequencing), or
(5a)
(5b)
(5c)
3.3V
R
X1
100Ω
10Ω
SENSE
M
DLY
10Ω
ΔV = 0V (coincident/ratiometric tracking)
Q2
2.5V MODULE
IN OUT
IRF7413Z
2.5V
SLAVE2
Use the following formula to determine the lower track
resistors, R , using the TRACK pin voltage, V , and
3.3V
C
MGATE
0.1µF
R
X2
0.1µF
100Ω
TA
TRACK
, both from
SENSE
10Ω
the FB pin internal reference voltage, V
the Electrical Characteristics:
FB(REF)
V
CC
MGATE RAMP SGATE1 SGATE2
D1
D2
S1
S2
VTRACK
RTA
=
(6)
RAMPBUF
VFB(REF) VFB(REF)
R
R
FB1
VTRACK
RTB
TB1
∆V
RTB
15.0k
15.0k
+
−
+
TRACK1
FB1
RFB
RFA
R
R
FA1
TA1
LTC2926
9.53k
9.53k
R
TB2
R
FB2
15.0k
15.0k
Note that large ratios of slave ramp rate to master ramp
rate, S /S , may result in negative values for R . In such
TRACK2
FAULT
FB2
R
V
TA2
IN
V
IN
R
FA2
5.76k
5.76k
S
M
TA
10k
casesincreasetheoffsetordelay,orreducetheslaveramp
10k
FAULT
ON/OFF
STATUS/PGI
STATUS
rate to realize positive values of R .
TA
ON
RSGATE
NC
GND
PGTMR
2926 F14
C
PGTMR
1µF
Figure 14. Coincident Tracking Example
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Since no offset or delay is required, Equation 5c applies:
have 1% tolerance. The 3-step design procedure detailed
above can be used to determine component values. Only
the slave 1 supply is considered here, as the procedure
is the same for the slave 2 supply.
ΔV = 0V
From Equation 6:
1. Set the ramp rate of the master signal.
0.8V
RTA
=
= 9.53kΩ
0.8V
0.8V
0.8V
0V
From Equation 1:
+
−
+
15.0kΩ 9.53kΩ 15.0kΩ 15.0kΩ
10µA
100V s
CMGATE
=
= 0.1µF
In this example, all supplies remain low while the ON pin
is held below 1.23V. When the ON pin rises above 1.23V,
10µApullsupC
andthegateofMOSFETQ0at100V/s.
MGATE
2.Choosethefeedbackresistorsbasedontheslavesupply
voltage and slave load.
The source of Q0 follows the gate and pulls up the output
to 3.3V at the rate of 100V/s. This output serves as the
master ramp and is buffered from the RAMP pin to the
RAMPBUF pin. As the master output and the RAMPBUF
pin rise, the current from the TRACK pins is reduced. Con-
sequently, the voltage at the FB pins begins to fall below
0.8V, which causes the SGATE pins to rise. The sources
of the slave supply MOSFETs, Q1 and Q2, follow the rising
SGATE signals, and the slave supplies track the master
supply. When all the supplies have finished ramping, the
RSGATE pin voltage rises to close the integrated remote
sense switches, which allows the slave supply modules
to compensate for voltage drops in the series MOSFETs. If
the supplies have ramped within the power good timeout
period (about 123ms in this example), the STATUS/PGI
pin will rise, indicating completed ramping. When the
ON pin is again pulled below 1.23V, the STATUS/PGI pin
falls and the RSGATE pin falls, which opens the remote
R = 150Ω
L
From Equation 2:
R
≥ 100 • 150Ω = 15kΩ
FB
Choose R = 15.0kΩ.
FB
From Equation 3:
0.99
1.01
1.98V
0.784V
⎛
⎞ ⎛
⎞
⎠
R <15.0kΩ•
−1 = 9.64kΩ
⎜
⎝
⎟ ⎜
⎠ ⎝
⎟
FA
Choose R = 9.53kΩ.
FA
3. Solveforthetrackingresistorsthatsetthedesiredramp
rate and voltage offset or time delay of the slave supply.
From Equation 4:
⎛
⎞
100V s
100V s
sense switches. Next, 10µA will pull down C
and the
MGATE
RTB =15.0kΩ•
=15.0kΩ
⎜
⎟
⎝
⎠
gate of MOSFET Q0 at 100V/s. If the loads on the outputs
are sufficient, all outputs will track down coincidently at
100V/s.
2926fa
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SLAVE2
SLAVE1
500mV/DIV
500mV/DIV
2926 F15
5ms/DIV
5ms/DIV
Figure 15. Ratiometric Tracking Waveforms from Figure 16 Circuit
Ratiometric Tracking Example
the ramp rate of the 1.8V slave supply is 60V/s, and the
ramp rate of the 2.5V supply is 83.3V/s. Always verify that
the chosen ramp rate will allow the supplies to ramp-up
This example converts the coincident tracking example to
the ratiometric tracking profile shown in Figure 15, using
two slave supplies and a master ramp signal (not a master
ramp supply). The ramp rate of the master signal remains
unchanged (Step 1), the minimum load resistance of the
slave loads remains unchanged (Step 2), and there is no
delay in ratiometric tracking. Only Step 3 of the three-step
designprocedureneedstobeconsidered. Inthisexample,
completelybeforeRAMPBUFreachesV .Ifthe1.8Vslave
CC
supply were to ramp up at 50V/s it would only reach 1.65V
because the RAMPBUF signal would reach its final value
of V = 3.3V before the slave supply reached 1.8V.
CC
3. Solveforthetrackingresistorsthatsetthedesiredramp
rate and voltage offset or time delay of the slave supply.
From Equation 4:
Q1
1.8V MODULE
IN OUT
IRF7413Z
1.8V
SLAVE1
3.3V
R
X1
100Ω
⎛
⎞
100V s
60V s
RTB =15.0kΩ•
= 25kΩ
SENSE
⎜
⎟
10Ω
⎝
⎠
Q2
2.5V MODULE
IN OUT
Choose R = 24.9kΩ.
IRF7413Z
TB
2.5V
SLAVE2
3.3V
C
MGATE
0.1µF
R
X2
100Ω
0.1µF
Since no offset or delay is required, Equation 5c applies:
3.3V
IN
SENSE
V
10Ω
ΔV = 0V
V
MGATE RAMP SGATE1 SGATE2
CC
D1
D2
From Equation 6:
S1
S2
RAMPBUF
0.8V
R
R
FB1
TB1
RTA
=
= 7.61kΩ
24.9k
15.0k
0.8V
0.8V
0.8V
0V
TRACK1
FB1
+
−
+
R
R
FA1
TA1
LTC2926
15.0kΩ 9.53kΩ 24.9kΩ 24.9kΩ
9.53k
7.68k
R
TB2
R
FB2
18.2k
15.0k
TRACK2
FAULT
FB2
Choose R = 7.68kΩ.
R
V
TA2
TA
IN
V
IN
R
FA2
5.76k
5.36k
10k
10k
FAULT
ON/OFF
STATUS/PGI
STATUS
ON
RSGATE
2926 F16
NC
GND
PGTMR
C
PGTMR
1µF
Figure 16. Ratiometric Tracking Example
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MASTER
SLAVE2
SLAVE1
500mV/DIV
500mV/DIV
2926 F17
5ms/DIV
5ms/DIV
Figure 17. Offset Tracking Waveforms from Figure 18 Circuit
Offset Tracking Example
design procedure. Only step 3 must be considered. Be
sure to verify that the chosen voltage offsets will allow
the slave supplies to ramp up completely. In this example,
if the voltage offset on the 1.8V supply were 2V, it could
ramp up only to 3.3V – 2V = 1.3V.
Convertingthecircuitinthecoincidenttrackingexampleto
the offset tracking profile shown in Figure 17 is relatively
simple. Here the 1.8V slave supply ramps up 1V below the
master, and the 2.5V slave supply ramps up 0.5V below
the master. The ramp rate remains the same (100V/s), as
do the slave supplies’ minimum load resistances, so there
are no changes necessary to steps 1 or 2 of the three-step
3. Solveforthetrackingresistorsthatsetthedesiredramp
rate and voltage offset or time delay of the slave supply.
From Equation 4:
Q0
IRF7413Z
⎛
⎞
100V s
100V s
3.3V
3.3V V
IN
MASTER
RTB =15.0kΩ•
=15kΩ
Q1
IRF7413Z
1.8V MODULE
IN OUT
⎜
⎟
⎝
⎠
1.8V
SLAVE1
3.3V
3.3V
R
X1
100Ω
10Ω
SENSE
Choose R = 15.0kΩ.
10Ω
TB
Since offset is required, Equation 5a applies:
ΔV = 1.0V
Q2
2.5V MODULE
IN OUT
IRF7413Z
2.5V
SLAVE2
C
MGATE
0.1µF
R
X2
100Ω
0.1µF
SENSE
From Equation 6:
10Ω
V
MGATE RAMP SGATE1 SGATE2
CC
0.8V
D1
D2
RTA
=
= 5.31kΩ
0.8V
0.8V
0.8V
1.0V
S1
S2
+
−
+
RAMPBUF
15.0kΩ 9.53kΩ 15.0kΩ 15.0kΩ
Choose R = 5.36kΩ.
R
R
FB1
TB1
15.0k
15.0k
TRACK1
FB1
R
R
TA
FA1
TA1
LTC2926
9.53k
5.36k
R
TB2
R
FB2
15.0k
15.0k
TRACK2
FAULT
FB2
R
V
IN
TA2
V
IN
R
FA2
5.76k
4.64k
10k
10k
FAULT
ON/OFF
STATUS/PGI
STATUS
ON
RSGATE
2926 F18
NC
GND
PGTMR
C
PGTMR
1µF
Figure 18. Offset Tracking Example
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SLAVE2
SLAVE1
500mV/DIV
500mV/DIV
2926 F19
5ms/DIV
5ms/DIV
Figure 19. Supply Sequencing Waveforms from Figure 20 Circuit
Supply Sequencing Example
starts to ramp up. Note that not every combination of
ramp rates and delays is possible. Small delays and large
ratios of slave ramp rate to master ramp rate may result
in solutions that require negative resistors. In such cases,
either the delay must be increased or the ratio of slave
ramp rate to master ramp rate must be reduced.
In Figure 19, the two slave supplies are sequenced using a
masterrampsignal.Asintheratiometrictrackingexample,
the master signal ramps up at 100V/s, and the minimum
slave loads are the same as the coincident example, so
steps 1 and 2 remain the same. The 1.8V slave 1 supply
ramps up at 1000V/s beginning 10ms after the master
signal starts to ramp up. The 2.5V slave 2 supply ramps
up at 1000V/s beginning 20ms after the master signal
3. Solveforthetrackingresistorsthatsetthedesiredramp
rate and voltage offset or time delay of the slave supply.
From Equation 4:
Q1
IRF7413Z
1.8V MODULE
IN OUT
⎛
⎞
1.8V
SLAVE1
100V s
1000V s
3.3V
RTB =15.0kΩ•
=1.5kΩ
R
X1
100Ω
⎜
⎟
⎝
⎠
SENSE
10Ω
Choose R = 1.50kΩ.
TB
Q2
2.5V MODULE
IN OUT
IRF7413Z
2.5V
SLAVE2
3.3V
Since a delay is required, Equation 5b applies:
ΔV = 100V/s • 10ms = 1V
C
MGATE
0.1µF
R
X2
100Ω
0.1µF
3.3V
IN
SENSE
V
10Ω
From Equation 6:
V
MGATE RAMP SGATE1 SGATE2
CC
D1
D2
0.8V
S1
S2
RTA
=
= 2.96kΩ
RAMPBUF
0.8V
0.8V
0.8V
1V
R
R
FB1
TB1
+
−
+
1.50k
15.0k
15.0kΩ 9.53kΩ 1.50kΩ 1.50kΩ
TRACK1
FB1
R
R
FA1
TA1
LTC2926
9.53k
2.94k
R
TB2
R
FB2
2.49k
Choose R = 2.94kΩ.
TA
24.9k
TRACK2
FAULT
FB2
R
V
TA2
IN
V
IN
R
FA2
9.53k
Note that the values of R and R are larger than those
1.33k
FA2
FB2
10k
10k
oftheCoincidentTrackingExample.Largerfeedbackresis-
FAULT
ON/OFF
STATUS/PGI
STATUS
tor values resulted in larger tracking resistor values for
ON
RSGATE
2926 F20
NC
GND
PGTMR
R
and R , which limits the maximum TRACK2 pin
TB2
TA2
C
PGTMR
1µF
current to <1mA; see Final Sanity Checks.
Figure 20. Supply Sequencing Example
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Slave Control Without MOSFETs
Use the feedback resistor values required by the supply
generator in step 3. Next, split resistor R as in Figure
FA
The LTC2926 can control tracking and sequencing of a
slave supply without a MOSFET if the supply generator’s
output voltage is set by an accessible resistive voltage
divider and if its voltage reference is ground-based. Track-
ing currents mirrored to the FB pins are injected into the
feedback nodes of the supply generators to control the
output voltage. When master ramp signal has reached
it maximum voltage, the FB pin current is zero, and the
LTC2926 has no effect on the output voltage accuracy,
transient response or stability of the generator.
21b, so that
0.75V
VFB(GEN)
RFAA ≤RFA •
and
R
= R – R
FAB
FA
FAA
and tie the LTC2926’s FB pin to the node in between. The
new tap point allows the LTC2926’s FB pin to see <0.75V
at the end of ramp-up. Finally, scale the track resistors to
match R
:
FAA
To control a supply generator (e.g., DC/DC converter) with
a feedback reference voltage V
of 0.75V or less,
FB(GEN)
RFAA
R′ =
•RTA and
•RTB
connect the FB pin of the LTC2926 to the tap point of the
generator’s resistive divider, as shown in Figure 21a. Fol-
low steps 1 and 3 of the Three-Step Design Procedure to
set the ramp rates and tracking profile. Use the feedback
TA
RFAA +RFAB
RFAA
R′ =
TB
RFAA +RFAB
resistor values required by the supply generator for R
FA
and R in step 3.
FB
Voltage regulators that force their reference voltage be-
tween their output and feedback nodes do not employ a
ground-based reference, and thus will not be controllable
by the LTC2926 without a series MOSFET.
AgeneratorwithV
>0.75Vmaybecontrolledwithout
FB(GEN)
a MOSFET if the slave voltage is large enough (see Figure
22). First follow steps 1 and 3 of the Three-Step Design
Procedure to set the ramp rates and tracking profile.
SUPPLY GENERATOR
OUT
SUPPLY GENERATOR
IN OUT
Slave Supply Control Without
V
SLAVE
V
SLAVE
a MOSFET
IN
IN
IN
6
5
4
3
2
1
0
CONTROL VIA
FB PIN AND
SPLIT R
R
R
R
FB
FB
FA
RESISTOR
V
V
FB(GEN)
FB(GEN)
GND
FB
GND
FB
R
R
FA
FAB
FAA
CONTROL
VIA FB PIN
LTC2926
RAMPBUF
LTC2926
RAMPBUF
SGATE
NC
SGATE
NC
′
R
R
R
TB
TB
MOSFET
CONTROL ONLY
FB
FB
TRACK
TRACK
GND
GND
′
R
2926 F21
TA
TA
0
0.50 0.75 1.00
(V)
1.25 1.50
0.25
V
FB(GEN)
(a)
(b)
2926 F22
Figure 21. Slave Supply Control Without a MOSFET
(a) Generator Reference V ≤ 0.75V and (b) Generator Reference V
Figure 22. Regions of Possible
Slave Control Without a MOSFET
> 0.75V
FB(GEN)
FB(GEN)
2926fa
23
LTC2926
U
W U U
APPLICATIO S I FOR ATIO
Final Sanity Checks
Load Requirements
The collection of equations below is useful for identifying
unrealizable solutions.
A weak resistive load can cause static and dynamic track-
ing errors. The behavior of the source-follower topology
of MOSFET-controlled tracking relies on the load’s abil-
ity to support the ramp rates and tracking currents of a
particular application. Consider the simplified slave load
schematic in Figure 23.
As stated in step 3 of the design procedure, the slave
supply must finish ramping before the master signal has
reached its final voltage. This can be verified with the
following equation:
SUPPLY
MODULE
⎛
⎜
⎝
⎞
RTB
RTA
SLAVEn
Qn
VMASTER > VTRACK • 1+
⎟
OUT
⎠
LOAD
R
R
R
L
C
FB
FA
L
Here, V
= 0.8V. V
is the final voltage of the
MASTER
SGATEn
TRACK
FBn
mastersignal,eitherthesupplyvoltagerampedupthrough
LTC2926
the optional external MOSFET or V when no MOSFET
is present.
CC
2926 F23
It is possible to choose resistor values that require the
LTC2926 to supply more current than the Electrical Char-
acteristicstableguarantees. Toavoidthiscondition, check
Figure 23. Simplified Slave Supply Load
Whenthesuppliesarerampeddownquickly,theloadmust
be capable of sinking enough current to support the ramp
rate. Forexample, ifthereisalargeoutputcapacitanceand
a weak resistive load on a particular supply, that supply’s
falling rate will be limited by the RC time constant of the
load. In Figure 24, the falling 2.5V slave cannot keep up
with the falling master ramp.
that each TRACK pin’s current, I
, does not exceed
TRACKn
1mA, and that the RAMPBUF pin current, I
not exceed 3mA.
, does
RAMPBUF
To confirm that I
≤ 1mA, verify that:
TRACKn
VTRACK
RTA ||RTB
≤1mA
When the supplies are near ground, the load must be
capable of sinking the tracking current without creating
a large offset voltage. For weak resistive loads and slave
voltage levels near ground, the tracking current (at its
maximum there) can be in excess of the load’s current
demand. Having no capability for sinking current, the
MOSFETshutsoff. Allofthemirroredtrackingcurrentthat
Check that the RAMPBUF pin will not be forced to sink
more than 3mA when it is at 0V and will not be forced to
source more than 3mA when it is at V
.
MASTER
VTRACK
RTA1||RTB1 RTA2 ||RTB2
VTRACK
+
≤3mA and
flows through R also flows through the load resistance,
FB
R , which creates a voltage offset between the slave and
L
VMASTER VMASTER
RTA1+RTB1 RTA2 +RTB2
ground. In Figure 24, the 1.8V supply shows an offset
+
≤3mA
from ground.
2926fa
24
LTC2926
U
W U U
APPLICATIO S I FOR ATIO
Layout Considerations
MASTER
Be sure to place a 0.1µF bypass capacitor as near as pos-
sible to the supply pin of the LTC2926.
SLAVE2
LARGE τ = R C
L
L
L
SLAVE1
500mV/DIV
R
≈ R
L
FB
To minimize the noise on the slave supplies’ outputs, keep
the traces connecting the FB pins of the LTC2926 and the
feedback nodes of the slave supplies’ resistive voltage
dividers as short as possible. In addition, do not route
those traces next to signals with fast transitions times.
2926 F24
5ms/DIV
Figure 24. Tracking Effects of Weak Resistive Load
To get the best compensation of the series I • R drops
of the external MOSFETs, make sure the supply output
nodes and the supply generator sense connections use
Kelvin-sensing. The feedback resistive voltage divider
should Kelvin-sense the slave supply output node for
accuracy, as well.
Under worst-case conditions, FB pin voltages may reach
the maximum clamp voltage of 2.4V. To limit the slave
voltage offset to below 100mV, choose R ≥ 23 • R .
FB
L
Add a resistor in parallel with the load to strengthen weak
resistive loads as required.
SUPPLY
Start-Up Delays
MODULE
Q1
OUT
Often power supplies do not start up immediately when
theirinputsuppliesareapplied.IftheLTC2926triestoramp
up these power supplies as soon as the input supply is
present, the start-up of the outputs may be delayed, which
defeats the tracking circuit. Make sure the ON pin does not
initiate ramp-up until all supply sources are available.
100Ω
10Ω
KELVIN-SENSE
CONNECTIONS
SENSE
GND
SGATE1
D1
S1
KELVIN-SENSE
CONNECTIONS
MINIMIZE
TRACE
LTC2926
GND
R
MINIMIZE
TRACE LENGTH
SLAVE
LOAD
FB
LENGTH
FB1
V
CC
RAMP Pin Clamp
R
FA
0.1µF
The RAMP pin is weakly clamped to the V pin. When
CC
MGATE and RAMP are tied together their pin voltages will
2926 F25
KELVIN-SENSE
CONNECTIONS
not exceed V + 1V. If the RAMP pin is driven by a low
CC
impedance source that can exceed V , include a series
CC
Figure 25. Layout Considerations
resistortolimitthecurrentto<20µA.Use50kΩpersource
volt above V .
CC
2926fa
25
LTC2926
U
PACKAGE DESCRIPTIO
GN Package
20-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.337 – .344*
(8.560 – 8.738)
.058
(1.473)
REF
.045 .005
20 19 18 17 16 15 14 13 12 11
.254 MIN
.150 – .165
.229 – .244
.150 – .157**
(5.817 – 6.198)
(3.810 – 3.988)
.0165 .0015
.0250 BSC
1
2
3
4
5
6
7
8
9 10
RECOMMENDED SOLDER PAD LAYOUT
.015 .004
(0.38 0.10)
.0532 – .0688
(1.35 – 1.75)
× 45°
.004 – .0098
(0.102 – 0.249)
.0075 – .0098
(0.19 – 0.25)
0° – 8° TYP
.016 – .050
(0.406 – 1.270)
.008 – .012
.0250
(0.635)
BSC
(0.203 – 0.305)
TYP
NOTE:
1. CONTROLLING DIMENSION: INCHES
INCHES
(MILLIMETERS)
2. DIMENSIONS ARE IN
GN20 (SSOP) 0204
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
2926fa
26
LTC2926
U
PACKAGE DESCRIPTIO
UFD Package
20-Lead Plastic QFN (4mm × 5mm)
(Reference LTC DWG # 05-08-1711)
0.70 0.05
4.50 0.05
3.10 0.05
2.65 0.05
(2 SIDES)
PACKAGE OUTLINE
0.25 0.05
0.50 BSC
3.65 0.05
(2 SIDES)
4.10 0.05
5.50 0.05
2.65 0.10
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
PIN 1 NOTCH
R = 0.30 TYP
R = 0.115
TYP
19 20
0.75 0.05
4.00 0.10
(2 SIDES)
0.40 0.05
PIN 1
TOP MARK
(NOTE 6)
1
2
5.00 0.10
(2 SIDES)
3.65 0.10
(2 SIDES)
(UFD20) QFN 0304
0.25 0.05
0.50 BSC
0.200 REF
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WXXX-X).
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
2926fa
InformationfurnishedbyLinearTechnologyCorporationisbelievedtobeaccurateandreliable.However,
no responsibility is assumed for its use. Linear Technology Corporation makes no representation that
the interconnection of its circuits as described herein will not infringe on existing patent rights.
27
LTC2926
U
TYPICAL APPLICATIO
Chaining to Track/Sequence More Supplies
SUPPLY GENERATOR 4
Q4
IN
SLAVE4
SLAVE3
V
IN OUT
R
X4
SENSE
10Ω
SUPPLY GENERATOR 3
Q3
V
IN
IN OUT
R
X3
SENSE
10Ω
SGATE1 SGATE2
D1
D2
V
CC
S1
S2
0.1µF
R
R
FB3
ON
MGATE
RAMP
FB1
NC
LTC2926
FA3
RAMPBUF
R
R
FB4
V
CC
R
R
TB3
FB2
TRACK1
FA4
RSGATE
NC
10k
10k
TA3
R
R
TB4
FAULT
TRACK2
STATUS/PGI
GND PGTMR
TA4
SUPPLY GENERATOR 2
Q2
SLAVE2
SLAVE1
V
IN
IN OUT
R
X2
SENSE
10Ω
SUPPLY GENERATOR 1
Q1
V
IN
IN OUT
R
X1
SENSE
10Ω
SGATE1 SGATE2
D1
D2
V
CC
S1
S2
0.1µF
R
R
ONB
R
R
FB1
ON
FB1
FB2
ONA
FA1
R
R
MGATE
RAMP
RAMPBUF
FB2
LTC2926
C
MGATE
FA2
R
R
TB1
TRACK1
RSGATE
NC
TA1
R
TB2
FAULT
STATUS
FAULT
TRACK2
STATUS/PGI
GND PGTMR
2926 TA02
R
TA2
C
PGTMR
RELATED PARTS
PART NUMBER
DESCRIPTION
Precision Six Supply Monitor
COMMENTS
LTC2908
Four Fixed (Various Levels) and Two Adjustable Input Thresholds
Single or Dual, Symmetric/Asymmetric High and Low Margining
Monitor up to Five Supplies, Includes Remote Sense Switches
Controls Two Supplies Without FETs, MSOP-10 and DFN-12 Packages
LTC2920-1/LTC2920-2 Single/Dual Power Supply Margining Controllers
LTC2921/LTC2922
LTC2923
Power Supply Trackers with Input Monitors
Power Supply Tracking Controller
LTC2925
Multiple Power Supply Tracking Controller with
Power Good Timeout
Controls Three Supplies Without FETs, Includes Three Shutdown Control
Pins
LTC2927
Single Power Supply Tracking Controller
Controls Single Supply Without FETs, Daisy-Chain for Multiple Supplies
2926fa
LT 0506 REV A • PRINTED IN USA
28 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
© LINEAR TECHNOLOGY CORPORATION 2005
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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