LTC4440IS6#TRPBF [Linear]
暂无描述;LTC4440
High Speed, High Voltage
High Side Gate Driver
FEATURES
DESCRIPTION
The LTC®4440 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in ap-
n
Wide Operating V Range: Up to 80V
IN
n
Rugged Architecture Tolerant of 100V V
IN
Transients
Powerful 1.5Ω Driver Pull-Down
plications with V voltages up to 80V. The LTC4440 can
IN
n
also withstand and continue to function during 100V V
IN
n
Powerful 2.4A Peak Current Driver Pull-Up
7ns Fall Time Driving 1000pF Load
10ns Rise Time Driving 1000pF Load
Drives Standard Threshold MOSFETs
TTL/CMOS Compatible Inputs with Hysteresis
Input Thresholds are Independent of Supply
Undervoltage Lockout
transients. The powerful driver capability reduces switch-
ing losses in MOSFETs with high gate capacitances. The
LTC4440’s pull-up has a peak output current of 2.4A and
its pull-down has an output impedance of 1.5Ω.
n
n
n
n
n
n
n
The LTC4440 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 115V
above ground.
Low Profile (1mm) SOT-23 (ThinSOT)™ and
Thermally Enhanced 8-Pin MSOP Packages
APPLICATIONS
The LTC4440 contains both high side and low side under-
voltage lockout circuits that disable the external MOSFET
when activated.
n
Telecommunications Power Systems
n
Distributed Power Architectures
n
Server Power Supplies
The LTC4440 is available in the low profile (1mm) SOT-23
and thermally enhanced 8-lead MSOP packages.
n
High Density Power Modules
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the property
of their respective owners. Protected by U.S. Patents, including 6677210.
PARAMETER
LTC4440
80V
LTC4440-5
60V
LTC4440A-5
80V
Max Operating TS
Absolute Max TS
100V
80V
100V
MOSFET Gate Drive
8V to 15V
6.3V
4V to 15V
3.2V
4V to 15V
3.2V
+
V
V
UV
UV
CC
CC
–
6.0V
3.04V
3.04V
TYPICAL APPLICATION
Synchronous Phase-Modulated Full-Bridge Converter
V
IN
36V TO 72V
100V PEAK TRANSIENT
(ABS MAX)
LTC4440 Driving a 1000pF
Capacitive Load
V
CC
8V TO 15V
LTC4440
BOOST
V
CC
INPUT
(INP)
2V/DIV
INP
TG
TS
GND
OUTPUT
(TG – TS)
5V/DIV
LTC4440
V
BOOST
TG
V
CC
CC
•
•
LTC3722-1
INP
GND
TS
4440 TA01
4440 F02
10ns/DIV
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LTC4440
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage
Peak Output Current < 1µs (TG)................................. 4A
Driver Output TG (with Respect to TS)....... –0.3V to 15V
Operating Temperature Range (Note 2)
V
........................................................ –0.3V to 15V
CC
BOOST – TS........................................... –0.3V to 15V
INP Voltage ................................................ –0.3V to 15V
BOOST Voltage (Continuous)..................... –0.3V to 95V
BOOST Voltage (100ms) ...........................–0.3V to 115V
TS Voltage (Continuous) ............................... –5V to 80V
TS Voltage (100ms) .................................... –5V to 100V
LTC4440E ...........................................–40°C to 85°C
LTC4440I .......................................... –40°C to 125°C
Junction Temperature (Note 3) ............................ 125°C
Storage Temperature Range .................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec)...................300°C
PIN CONFIGURATION
TOP VIEW
TOP VIEW
INP
GND
1
2
3
4
8 TS
7 TG
6 BOOST
5 NC
V
1
6 BOOST
5 TG
CC
9
GND 2
INP 3
V
CC
GND
4 TS
MS8E PACKAGE
S6 PACKAGE
8-LEAD PLASTIC MSOP
6-LEAD PLASTIC SOT-23
T
= 125°C, θ = 40°C/W (NOTE 4)
JMAX
JA
T
= 125°C, θ = 230°C/W
EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB
JMAX
JA
ORDER INFORMATION
LEAD FREE FINISH
LTC4440EMS8E#PBF
LTC4440IMS8E#PBF
LTC4440ES6#PBF
LTC4440IS6#PBF
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
8-Lead Plastic MSOP
8-Lead Plastic MSOP
6-Lead Plastic SOT-23
6-Lead Plastic SOT-23
TEMPERATURE RANGE
–40°C to 85°C
LTC4440EMS8E#TRPBF LTF9
LTC4440IMS8E#TRPBF
LTC4440ES6#TRPBF
LTC4440IS6#TRPBF
LTF9
LTZY
LTZY
–40°C to 125°C
–40°C to 85°C
–40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
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LTC4440
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted.
SYMBOL PARAMETER
Main Supply (V
CONDITIONS
MIN
TYP
MAX
UNITS
)
CC
I
DC Supply Current
Normal Operation
UVLO
VCC
INP = 0V
CC
250
25
400
80
µA
µA
V
< UVLO Threshold (Falling) – 0.1V
l
l
UVLO
Undervoltage Lockout Threshold
V
V
Rising
Falling
5.7
5.4
6.5
6.2
300
7.3
7.0
V
V
mV
CC
CC
Hysteresis
Bootstrapped Supply (BOOST – TS)
I
DC Supply Current
Normal Operation
UVLO
BOOST
INP = 0V
BOOST
110
86
180
170
µA
µA
V
– V < UVLO
– 0.1V, V = INP = 5V
HS(FALLING) CC
TS
l
l
UVLO
Undervoltage Lockout Threshold
V
V
– V Rising
6.75
6.25
7.4
6.9
500
7.95
7.60
V
V
mV
HS
BOOST
BOOST
TS
– V Falling
TS
Hysteresis
Input Signal (INP)
l
l
V
V
V
High Input Threshold
Low Input Threshold
Input Voltage Hysteresis
Input Pin Bias Current
INP Ramping High
INP Ramping Low
1.3
1.6
1.25
0.350
0.01
2
V
V
IH
IL
0.85
1.6
– V
V
IH
IL
I
2
µA
INP
Output Gate Driver (TG)
V
V
High Output Voltage
Low Output Voltage
I
I
= –10mA, V = V
– V
TG
0.7
V
OH
OL
TG
OH
BOOST
= 100mA:
TG
l
l
150
150
220
300
mV
mV
0°C ≤ T ≤ 85°C
A
–40°C ≤ T ≤ 125°C
A
l
l
I
Peak Pull-Up Current
0°C ≤ T ≤ 85°C
1.7
1.5
2.4
2.4
A
A
PU
A
–40°C ≤ T ≤ 125°C
A
l
l
R
DS
Output Pull-Down Resistance
0°C ≤ T ≤ 85°C
1.5
1.5
2.2
3
Ω
Ω
A
–40°C ≤ T ≤ 125°C
A
Switching Timing
t
t
t
t
Output Rise Time
10% – 90%, C = 1nF
10
ns
ns
r
L
10% – 90%, C = 10nF
100
L
Output Fall Time
10% – 90%, C = 1nF
7
70
ns
ns
f
L
10% – 90%, C = 10nF
L
l
l
Output Low-High Propagation Delay
Output High-Low Propagation Delay
0°C ≤ T ≤ 85°C
30
30
65
75
ns
ns
PLH
PHL
A
–40°C ≤ T ≤ 125°C
A
l
l
0°C ≤ T ≤ 85°C
28
28
65
75
ns
ns
A
–40°C ≤ T ≤ 125°C
A
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 3: T is calculated from the ambient temperature T and power
dissipation PD according to the following formula:
J
A
Note 2: The LTC4440E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC4440I is guaranteed and tested
over the –40°C to 125°C operating temperature range.
T = T + (PD • θ °C/W)
J A JA
Note 4: Failure to solder the exposed back side of the MS8E package to the
PC board will result in a thermal resistance much higher than 40°C/W.
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LTC4440
TYPICAL PERFORMANCE CHARACTERISTICS
VCC Supply Quiescent Current
vs Voltage
BOOST – TS Supply Quiescent
Current vs Voltage
Output Low Voltage (VOL
)
vs Supply Voltage
300
250
200
150
100
50
170
165
160
155
150
145
140
500
450
T
= 25°C
T
= 25°C
I
= 100mA
= 25°C
A
A
TG
A
INP = 0V
T
400
350
300
INP = V
CC
INP = V
CC
250
200
150
100
50
INP = 0V
0
0
0
5
10
15
8
9
10
11
12
13
14
15
0
10
BOOST – TS SUPPLY VOLTAGE (V)
15
5
V
SUPPLY VOLTAGE (V)
BOOST – TS SUPPLY VOLTAGE (V)
CC
4440 G01
4440 G02
4440 G03
Output High Voltage (VOH
)
Input Thresholds (INP)
vs Supply Voltage
VCC Supply Current
at TTL Input Levels
vs Supply Voltage
15
2.0
1.8
380
360
340
320
300
280
260
240
220
200
T
= 25°C
T
= 25°C
T
= 25°C
A
A
A
14
13
V
IH
INP = 2V
(INPUT HIGH THRESHOLD)
I
TG
= –1mA
1.6
1.4
12
11
10
9
I
TG
= –10mA
V
IL
(INPUT LOW THRESHOLD)
I
TG
= –100mA
INP = 0.8V
1.2
1.0
0.8
8
7
9
10
12
13
14
15
8
11
7
9
11
13
15
12
SUPPLY VOLTAGE (V)
8
10
14
V
CC
SUPPLY VOLTAGE (V)
BOOST – TS SUPPLY VOLTAGE (V)
V
CC
4440 G06
4440 G04
4440 G05
VCC Supply Current (VCC = 12V)
vs Temperature
VCC Undervoltage Lockout
Thresholds vs Temperature
2MHz Operation
6.55
6.50
300
250
INPUT
(INP)
INP = 0V
5V/DIV
RISING THRESHOLD
6.45
6.40
6.35
6.30
6.25
6.20
6.15
INP = 12V
200
150
100
50
OUTPUT
(TG)
5V/DIV
FALLING THRESHOLD
4440 G07
V
CC
= 12V
250ns/DIV
0
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G09
4440 G08
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LTC4440
TYPICAL PERFORMANCE CHARACTERISTICS
Boost Supply (BOOST – TS)
Undervoltage Lockout Thresholds
vs Temperature
Boost Supply Current
vs Temperature
Input Threshold vs Temperature
7.6
7.5
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
2.0
1.8
500
450
400
350
300
250
200
150
100
50
INP = 12V
RISING THRESHOLD
V (V = 12V)
IH CC
V (V = 15V)
IH CC
1.6
1.4
1.2
1.0
0.8
V
V
(V = 8V)
IH CC
V (V = 12V)
IL CC
V
(V = 15V)
IL CC
(V = 8V)
IL CC
FALLING THRESHOLD
INP = 0V
0
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G11
4440 G12
4440 G10
Input Threshold Hysteresis
vs Temperature
Peak Driver (TG) Pull-Up Current
vs Temperature
500
480
460
440
420
400
380
360
340
320
300
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
BOOST – TS = 15V
V -V (V = 12V)
IH IL CC
V -V (V = 15V)
IH IL CC
BOOST – TS = 12V
V -V (V = 8V)
IH IL CC
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G14
4440 G13
Output Driver Pull-Down
Resistance vs Temperature
Propagation Delay vs Temperature
(VCC = BOOST = 12V)
45
40
35
30
25
20
15
10
5
3.0
2.5
t
BOOST – TS = 12V
BOOST – TS = 8V
PLH
2.0
1.5
1.0
0.5
0
t
PHL
BOOST – TS = 15V
0
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G16
4440 G15
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LTC4440
PIN FUNCTIONS
SOT-23 Package
Exposed Pad MS8E Package
V
(Pin 1): Chip Supply. This pin powers the internal
INP (Pin 1): Input Signal. TTL/CMOS compatible input
CC
low side circuitry. A low ESR ceramic bypass capacitor
referenced to GND (Pin 2).
should be tied between this pin and the GND pin (Pin 2).
GND (Pins 2, 4): Chip Ground.
GND (Pin 2): Chip Ground.
V
(Pin 3): Chip Supply. This pin powers the internal
CC
INP (Pin 3): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
low side circuitry. A low ESR ceramic bypass capacitor
should be tied between this pin and the GND pin (Pin 2).
TS (Pin 4): Top (High Side) Source Connection.
NC (Pin 5): No Connect. No connection required. For
convenience, this pin may be tied to Pin 6 (BOOST) on
the application board.
TG (Pin 5): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST(Pin6):HighSideBootstrappedSupply.Anexternal
BOOST (Pin 6): High Side Bootstrapped Supply. An
external capacitor should be tied between this pin and
TS (Pin 4). Normally, a bootstrap diode is connected
capacitor should be tied between this pin and TS (Pin 8).
Normally, a bootstrap diode is connected between V
(Pin 3) and this pin. Voltage swing at this pin is from V
CC
CC
between V (Pin 1) and this pin. Voltage swing at this
CC
– V to V + V – V , where V is the forward voltage
D
IN
CC
D
D
pin is from V – V to V + V – V , where V is the
CC
D
IN
CC
D
D
drop of the bootstrap diode.
forward voltage drop of the bootstrap diode.
TG (Pin 7): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
TS (Pin 8): Top (High Side) Source Connection.
Exposed Pad (Pin 9): Ground. Must be electrically con-
nected to Pins 2 and 4 and soldered to PCB ground for
optimum thermal performance.
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LTC4440
BLOCK DIAGRAM
V
IN
UP TO 80V,
TRANSIENT
UP TO 100V
BOOST
HIGH SIDE
UNDERVOLTAGE
LOCKOUT
V
CC
UNDERVOLTAGE
LOCKOUT
TG
TS
8V TO 15V
GND
BOOST
INP
LEVEL SHIFTER
4440 BD
GND
TS
TIMING DIAGRAM
INPUT RISE/FALL TIME <10ns
V
IH
INPUT (INP)
V
IL
90%
10%
OUTPUT (TG)
t
r
t
f
t
t
PHL
PLH
4440 TD
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LTC4440
APPLICATIONS INFORMATION
Overview
Output Stage
The LTC4440 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 100V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440 normally operates in applications with input
A simplified version of the LTC4440’s output stage is
shown in Figure 3 . The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junctiontransistor(Q1).Theoutputswingsfromthelower
rail (TS) to within an NPN V (~0.7V) of the positive rail
BE
(BOOST). This large voltage swing is important in driv-
supply voltages (V ) up to 80V, but is able to withstand
ing external power MOSFETs, whose R
is inversely
IN
DS(ON)
and continue to function during 100V, 100ms transients
on the input supply.
proportional to its gate overdrive voltage (V – V ).
GS
TH
The LTC4440’s peak pull-up (Q1) current is 2.4A while the
pull-down (N1) resistance is 1.5Ω. The low impedance
of N1 is required to discharge the power MOSFET’s gate
capacitanceduringhigh-to-lowsignaltransitions.Whenthe
powerMOSFET’sgateispulledlow(gateshortedtosource
through N1) by the LTC4440, its source (TS) is pulled low
by its load (e.g., an inductor or resistor). The slew rate
of the source/gate voltage causes current to flow back to
the MOSFET’s gate through the gate-to-drain capacitance
The powerful output driver of the LTC4440 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440 is capable of driving a
1nF load with 10ns rise and 7ns fall times using a boot-
strapped supply voltage V
of 12V.
BOOST–TS
Input Stage
TheLTC4440employsTTL/CMOScompatibleinputthresh-
oldsthatallowalowvoltagedigitalsignaltodrivestandard
powerMOSFETs.TheLTC4440containsaninternalvoltage
regulator that biases the input buffer, allowing the input
(C ). If the MOSFET driver does not have sufficient sink
GD
current capability (low output impedance), the current
through the power MOSFET’s C can momentarily pull
GD
the gate high, turning the MOSFET back on.
thresholds (V = 1.6V, V = 1.25V) to be independent of
IH
IL
variations in V . The 350mV hysteresis between V and
CC
IH
AsimilarscenarioexistswhentheLTC4440isusedtodrive
a low side MOSFET. When the low side power MOSFET’s
gate is pulled low by the LTC4440, its drain voltage is
pulled high byitsload (e.g., inductor orresistor). Theslew
rate of the drain voltage causes current to flow back to the
MOSFET’s gate through its gate-to-drain capacitance. If
V eliminatesfalsetriggeringduetonoiseduringswitching
IL
transitions. However, care should be taken to keep this
pin from any noise pickup, especially in high frequency,
high voltage applications. The LTC4440 input buffer has a
high input impedance and draws negligible input current,
simplifying the drive circuitry required for the input.
V
BOOST
IN
UP TO 100V
LTC4440
C
GD
Q1
TG
POWER
MOSFET
N1
C
GS
LOAD
INDUCTOR
4440 F03
–
V
TS
Figure 3. Capacitance Seen by TG During Switching
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LTC4440
APPLICATIONS INFORMATION
the MOSFET driver does not have sufficient sink current Power dissipation consists of standby and switching
capability (low output impedance), the current through power losses:
the power MOSFET’s C can momentarily pull the gate
GD
PD = P
+ P
AC
STDBY
high, turning the MOSFET back on.
where:
Rise/Fall Time
P
P
= Standby Power Losses
= AC Switching Losses
STDBY
Since the power MOSFET generally accounts for the ma-
jority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440 can drive a 1nF load
with a 10ns rise time and 7ns fall time.
AC
TheLTC4440consumesverylittlecurrentduringstandby.
The DC power loss at V = 12V and V = 12V is
only (250µA + 110µA)(12V) = 4.32mW.
CC
BOOST–TS
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance dur-
ing switching. Load losses for the output driver driving a
The LTC4440’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drivesQ1andN1usesanonoverlappingtransitionscheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
pure capacitive load C
would be:
OUT
2
Load Capacitive Power = (C )(f)(V
)
Power Dissipation
OUT
BOOST–TS
The power MOSFET’s gate capacitance seen by the driver
To ensure proper operation and long-term reliability,
the LTC4440 must not operate beyond its maximum
temperature rating. Package junction temperature can
be calculated by:
output varies with its V voltage level during switching.
GS
A power MOSFET’s capacitive load power dissipation
can be calculated using its gate charge, Q . The Q value
G
G
corresponding to the MOSFET’s V value (V in this
GS
CC
T = T + PD (θ )
J
A
JA
case) can be readily obtained from the manufacturer’s
Q vs V curves:
where:
G
GS
T = Junction Temperature
J
Load Capacitive Power (MOS) = (V )(Q )(f)
BOOST–TS G
T = Ambient Temperature
A
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
nodal capacitances and cross-conduction currents in the
internal gates.
PD = Power Dissipation
θ
JA
= Junction-to-Ambient Thermal Resistance
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LTC4440
APPLICATIONS INFORMATION
Undervoltage Lockout (UVLO)
B. Use a low inductance, low impedance ground plane
to reduce any ground drop and stray capacitance. Re-
member that the LTC4440 switches >2A peak currents
and any significant ground drop will degrade signal
integrity.
The LTC4440 contains both low side and high side un-
dervoltage lockout detectors that monitor V and the
CC
bootstrapped supply V
. When V falls below
BOOST–TS
CC
6.2V, the internal buffer is disabled and the output pin
OUT is pulled down to TS. When V falls below
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for
the input pin and the output power stage.
BOOST – TS
6.9V, OUT is pulled down to TS. When both supplies are
undervoltage, OUT is pulled low to TS and the chip enters
a low current mode, drawing approximately 25µA from
V
CC
and 86µA from BOOST.
D. Keep the copper trace between the driver output pin
and the load short and wide.
Bypassing and Grounding
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440 package
The LTC4440 requires proper bypassing on the V
CC
and V
supplies due to its high speed switching
BOOST–TS
2
to the board. Correctly soldered to a 2500mm double-
(nanoseconds)andlargeACcurrents(Amperes).Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
sided 1oz copper board, the LTC4440 has a thermal
resistance of approximately 40°C/W. Failure to make
good thermal contact between the exposed back side
and the copper board will result in thermal resistances
far greater than 40°C/W.
To obtain the optimum performance from the LTC4440:
A. Mount the bypass capacitors as close as possible
between the V and GND pins and the BOOST and
CC
TS pins. The leads should be shortened as much as
possible to reduce lead inductance.
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For more information www.linear.com/LTC4440
LTC4440
TYPICAL APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
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For more information www.linear.com/LTC4440
LTC4440
TYPICAL APPLICATIONS
•
•
•
•
•
•
•
•
E F F I C I E N C Y ( % )
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For more information www.linear.com/LTC4440
LTC4440
PACKAGE DESCRIPTION
MS8E Package
8-Lead Plastic MSOP, Exposed Die Pad
(Reference LTC DWG # 05-08-1662 Rev K)
BOTTOM VIEW OF
EXPOSED PAD OPTION
1.88
(.074)
1.68
1
0.29
REF
1.88 ±0.102
(.074 ±.004)
0.889 ±0.127
(.035 ±.005)
(.066)
0.05 REF
DETAIL “B”
5.10
(.201)
MIN
3.20 – 3.45
(.126 – .136)
1.68 ±0.102
CORNER TAIL IS PART OF
THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
(.066 ±.004)
DETAIL “B”
8
NO MEASUREMENT PURPOSE
3.00 ±0.102
(.118 ±.004)
(NOTE 3)
0.65
(.0256)
BSC
0.52
(.0205)
REF
0.42 ±0.038
(.0165 ±.0015)
8
7 6 5
TYP
RECOMMENDED SOLDER PAD LAYOUT
3.00 ±0.102
(.118 ±.004)
(NOTE 4)
4.90 ±0.152
(.193 ±.006)
DETAIL “A”
0.254
(.010)
0° – 6° TYP
GAUGE PLANE
1
2
3
4
0.53 ±0.152
(.021 ±.006)
1.10
(.043)
MAX
0.86
(.034)
REF
DETAIL “A”
0.18
(.007)
SEATING
PLANE
0.22 – 0.38
(.009 – .015)
TYP
0.1016 ±0.0508
(.004 ±.002)
0.65
(.0256)
BSC
MSOP (MS8E) 0213 REV K
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD
SHALL NOT EXCEED 0.254mm (.010") PER SIDE.
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LTC4440
PACKAGE DESCRIPTION
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
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For more information www.linear.com/LTC4440
LTC4440
REVISION HISTORY
REV
DATE
1013
0215
DESCRIPTION
PAGE NUMBER
A
Added comparison table
Released I-Grade Version
1
B
2, 3
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LTC4440
TYPICAL APPLICATION
LTC3723-2/LTC4440/LTC3901 240W 42V-56VIN to Unregulated 12V Half-Bridge Converter
L1
0.56µH
V
IN
V
E
V
IN
48V
IN
–V
IN
2
7
9
V
1µF
100V
1µF
OUT
L2 0.22µH
1µF
1µF
100V
11V
1
V
100V
100V
D1
OUT
T2
1500pF
100V
V
F
20Ω 1W
70(980H):1
+
C2
180µF
16V
4
3
11
+
CS
V
CC
3
6
5
1
8
7
A
INP BOOST
LTC4440ES6
TG
1µF
100V
1µF
100V
1µF
–V
Si7370DP
Si7370DP
×2
Si7852DP
3
5
×2
×2
GND TS
OUT
2
4
0.22µF
C1
2.2nF
250V
V
F
V
E
–V
OUT
D2
D3
12V
4.7k
1/4W
4.7k
1/4W
1
6
B
L3
1mH
+
C3
68µF
T1
5:4:4:2:2
Si7852DP
×2
10k 3k
10k 3k
V
12V
MMBT3904
11V
IN
11
+
12 14 15
–
6
5
–
2
3
16
A
6
T3
+
33.2k
100Ω
MMBT3904
V
OUT
CSF
CSF MF MF2 CSE
CSE ME ME2 V
CC
4
1(1.5mH):0.5
1
15k
1/4W
2
1
4
9
120Ω
LTC3901EGN
DRVA DRVB
SYNC
PV
CC
SDRB
5
1k
0.1µF
100Ω
5
V
CC
GND PGND GND2 PGND2
10 13
TIMER
7
22Ω
3
8
1µF
1µF
LTC3723EGN-2
215k
SDRA
8
4
10V
MMBZ5240B
15
11
220pF
UVLO
DPRG
12
COMP
330pF
+
B
CS
0.22µF
V
RAMP
9
C
T
SPRG GND CS SS FB
4440 TA04
REF
1
1µF, 100V TDK C4532X7R2A105M
C1: MURATA DE2E3KH222MB3B
C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
D1-D3: BAS21
D4, D5: MMBD914
8
16
7
10 14 13
–V
OUT
1µF
100pF
D4
D5
1k
62k
1µF
150pF
10k
2N7002
4.7k
30.1k
0.47µF
330pF
0.47µF
470pF
7.5Ω 7.5Ω
L1: COILCRAFT DO1813P-561HC
L2: SUMIDA CDEP105-0R2NC-50
L3: COILCRAFT DO1608C-105
T1: PULSE PA0801.005
12V
MMBZ5242B
T2: PULSE P8207
T3: PULSE PA0785
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
LTC4441
LT1910
6A N-Channel MOSFET Gate Driver
Protected High Side MOSFET Driver
Up to 25V Supply Voltage, Adjustable Gate Drive Voltage from 5V to 8V
Up to 48V/60V Surge Supply Voltage, Adjustable Current Limit
LTC4442
LTC4449
High Speed Synchronous N-Channel MOSFET Driver
High Speed Synchronous N-Channel MOSFET Driver
Up to 38V Supply Voltage, 6V ≤ V ≤ 9.5V
CC
Up to 38V Supply Voltage, 4.5V ≤ V ≤ 6.5V
CC
LTC4444/
LTC4444-5
High Voltage Synchronous N-Channel MOSFET Driver
with Shoot-Through Protection
Up to 100V Supply Voltage, 4.5V/7.2V ≤ V ≤ 13.5V, 3A Peak Pull-
CC
Up/0.55Ω Peak Pull-Down
LTC4446
High Voltage Synchronous N-Channel MOSFET Driver
without Shoot-Through Protection
Up to 100V Supply Voltage, 7.2V ≤ V ≤ 13.5V, 3A Peak Pull-Up/0.55Ω
CC
Peak Pull-Down
LTC1154
LTC1155
LTC3900
LTC3901
High Side Micropower MOSFET Driver
Up to 18V Supply Voltage, 85μA Quiescent Current, Internal Charge Pump
Up to 18V Supply Voltage, 85μA Quiescent Current, Internal Charge Pump
Pulse Transformer Synchronous Input
Dual High Side Micropower MOSFET Driver
Synchronous Rectifier Driver for Forward Converters
Synchronous Rectifier Driver for Push-Pull and Full-
Bridge Converters
Pulse Transformer Synchronous Input
LTC3722-1/
LTC3722-2
Synchronous Phase Modulated Full-Bridge Controllers
Adjustable Synchronous Rectification Timing for Highest Efficiency
High Efficiency with On-Chip MOSFET Drivers
LTC3723-1/
LTC3723-2
Synchronous Push-Pull and Full-Bridge Controllers
4440fb
LT 0215 REV B • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
●
●
(408)432-1900 FAX: (408) 434-0507 www.linear.com/LTC4440
LINEAR TECHNOLOGY CORPORATION 2003
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