LTC5507ES6#TRPBF [Linear]
LTC5507 - 100kHz to 1GHz RF Power Detector; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C;
| 型号： | LTC5507ES6#TRPBF |
| 厂家： | 
Linear |
| 描述： | LTC5507 - 100kHz to 1GHz RF Power Detector; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C 射频 微波 |
| 文件： | 总8页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5507
100kHz to 1GHz
RF Power Detector
U
FEATURES
DESCRIPTIO
The LTC®5507 is an RF power detector for applications
operating from 100kHz to 1000MHz. The input frequency
range is determined by an external capacitor. A tempera-
ture-compensatedSchottkydiodepeakdetectorandbuffer
amplifier are combined in a small 6-pin ThinSOT package.
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Power Range: –34dBm to 14dBm
■
Ultra Wide Input Frequency Range: 100kHz to
1000MHz
Buffered Output
■
The RF input voltage is peak detected using an on-chip
Schottky diode and external capacitor. The detected volt-
age is buffered and supplied to the VOUT pin. A power
saving shutdown mode reduces supply current to less
than 2µA.
■
Wide VCC Range of 2.7V to 6V
■
Low Operating Current: 550µA
■
Low Shutdown Current: <2µA
Low Profile (1mm) ThinSOTTM Package
■
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation
APPLICATIO S
■
Wireless Transceivers
■
Wireless and Cable Infrastructure
■
RF Power Alarm
Envelope Detector
■
U
TYPICAL APPLICATIO
Typical Detector Characteristics
at 100kHz, 100MHz and 1000MHz
10000
T
= 25°C
CC
A
V
= 2.7V TO 6V
LTC5507
V
OUT
4
5
6
3
2
1
DETECTED
VOLTAGE
V
V
OUT
CC
V
BAT
C2
2.7V TO 6V
PCAP
RF
GND
C1
1000
RF
INPUT
100kHz, 100MHz
1000MHz
DISABLE ENABLE
SHDN
IN
5507 TA01
Figure 1. 100kHz to 1000MHz RF Power Detector
100
–34
–26
–18
–10
–2
6
14
RF INPUT POWER (dBm)
5507 TA01b
5507f
1
LTC5507
W W
U W
U
W
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ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
VCC, VOUT to GND .................................... –0.3V to 6.5V
RFIN Voltage to GND ......................... (VCC ± 1.8V) to 7V
SHDN Voltage to GND ................ –0.3V to (VCC + 0.3V)
PCAP Voltage to GND ........................(VCC – 1.8V) to 7V
NUMBER
TOP VIEW
LTC5507ES6
SHDN 1
GND 2
6 RF
IN
5 PCAP
I
VOUT ...................................................................... 5mA
V
3
4 V
CC
OUT
S6 PART
MARKING
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
S6 PACKAGE
6-LEAD PLASTIC SOT-23
TJMAX = 125°C, θJA = 250°C/W
LTZX
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Shutdown Current
Operating Current
●
●
●
2.7
CC
VCC
VCC
I
I
SHDN = 0V
2
µA
SHDN = V , I
= 0mA
0.55
0.85
370
mA
CC VOUT
V
V
(No RF Input)
R
= 2k, SHDN = V , Enabled
130
1
250
1
mV
mV
OUT OL
LOAD
CC
SHDN = 0V, Disabled
V
V
V
V
Output Current
Enable Time
Load Capacitance
Noise
V
= 1.75V, V = 2.7V to 6V, ∆V
= 10mV
●
●
●
2
7
mA
µs
OUT
OUT
OUT
OUT
OUT
CC
OUT
SHDN = V , C
= 33pF, R
= 2k
LOAD
20
33
CC LOAD
(Note 4)
pF
V
V
V
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
2
mV
P-P
CC
CC
CC
SHDN Voltage, Chip Disabled
SHDN Voltage, Chip Enabled
SHDN Input Current
= 2.7V to 6V
= 2.7V to 6V
●
●
●
0.35
40
V
1.4
V
SHDN = 3.6V
24
0.1– 1000
14
µA
RF Input Frequency Range
IN
MHz
dBm
Max RF Input Power
(Note 3)
IN
RF AC Input Resistance
IN
F = 10MHz, RF Input = –10dBm
F = 1000MHz, RF Input = –10dBm
130
95
Ω
Ω
RF Input Shunt Capacitance
IN
1.7
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 3: RF performance is tested at: 80MHz, –4dBm
Note 4: Guaranteed by design.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
5507f
2
LTC5507
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TYPICAL PERFOR A CE CHARACTERISTICS
LTC5507 Typical Detector
Characteristics, 100kHz,
LTC5507 Typical Detector
Characteristics, 100MHz
VCC = 2.7V TO 6V
V
CC = 2.7V TO 6V
10000
1000
100
10000
1000
100
C1 = 0.47µF
C2 = 0.47µF
C1 = 1000pF
C2 = 1000pF
T
= –40°C
= 25°C
T
= –40°C
A
A
T
= 85°C
A
T
A
= 85°C
T
= 25°C
A
T
A
–34 –28 –22 –16 –10 –4
2
8
14
–34 –28 –22 –16 –10 –4
2
8
14
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5507 G01
5507 G02
LTC5507 Typical Detector
Characteristics, 1000MHz
VCC = 2.7V TO 6V
Positive VOUT Slew Rate vs C2
Capacitance
10.0
1.0
10000
1000
100
C1 = 33pF
C2 = 33pF
0.10
0.01
T
A
= –40°C
T
A
= 85°C
T
= 25°C
A
33
330
3300
33000
330000
–34 –28 –22 –16 –10 –4
2
8
14
C2 CAPACITANCE (pF)
RF INPUT POWER (dBm)
5507 G03
5507 G04
Negative VOUT Slew Rate vs C2
Capacitance
VOUT BW vs C2 Capacitance
10000
1000
100
10
10.000
1.000
0.100
0.010
0.001
0
1
33
330
3300
33000
330000
33
330
3300
33000
330000
C2 CAPACITANCE (pF)
C2 CAPACITANCE (pF)
5507 G06
5507 G05
5507f
3
LTC5507
U
U
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PI FU CTIO S
V
CC (Pin4):PowerSupplyVoltage, 2.7Vto6V. VCC should
SHDN (Pin 1): Shutdown Input. A logic low or no-connect
ontheSHDNpinplacesthepartinshutdownmode.Alogic
high enables the part. SHDN has an internal 150k pull
down resistor to ensure that the part is in shutdown when
the enable driver is in a tri-state condition.
be bypassed with 0.1µF and 100pF ceramic capacitors.
PCAP (Pin 5): Peak Detector Hold Capacitor. Capacitor
value is dependent on RF frequency. Capacitor must be
connected between PCAP and VCC.
GND (Pin 2): System Ground.
RFIN (Pin 6): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. This pin has an internal 250Ω termination
and an internal Schottky diode detector.
V
OUT (Pin 3): Buffered and Level Shifted Detector Output
Voltage.
W
BLOCK DIAGRA
V
CC
4
GAIN
+
–
COMPRESSION
BUFFER
30k
V
OUT
3
C1
250Ω
RF
SOURCE
6
5
SHDN
RF
IN
100Ω
30k
C2
V
CC
+
–
PCAP
GND
RF DET
60µA
60µA
150k
BIAS
2
1
5507 BD
C1 = C2
SHDN
1
30f
C2 (µF) ≥
, f = LOWEST RF INPUT FREQUENCY (MHz)
Figure 2.
5507f
4
LTC5507
U
W
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APPLICATIO S I FOR ATIO
Operation
Applications
The LTC5507 integrates several functions to provide RF
power detection over frequencies up to 1000MHz. These
functions include an internally compensated buffer ampli-
fier, an RF Schottky diode peak detector and level shift
amplifier to convert the RF signal to DC, a delay circuit to
avoid voltage transients at VOUT when coming out of shut-
down, and a gain compression circuit to extend the
detector dynamic range.
TheLTC5507canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–34dBm to 14dBm for frequencies up to 1000MHz.
The LTC5507 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 1.5MHz.
Depending on specific application needs, the RSSI output
can be split into two branches, providing AC-coupled data
(or audio) output and DC-coupled, RSSI output for signal
strength measurements and AGC.
Buffer Amplifier
The buffer amplifier has a gain of two and is capable of
driving a 2mA load. The buffer amplifier typically has an
output voltage range of 0.25V to VCC – 0.1V.
C1, C2 Capacitor Selection (Refer to Figure 3)
C1 couples the RF input signal to the detector input RFIN
which is referenced to VCC. C2 is the peak detector
capacitor connected between PCAP and VCC. The value of
C2willaffecttheslewrateandbandwidth.TypicallyC1can
equal C2. Ceramic capacitors are recommended for C1
and C2. The values for C1 and C2 are dependent on the
operating RF frequency. The capacitive reactance should
be less than 5Ω to minimize ripple on C2.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The frequency range of the RF pin is
typically up to 1000MHz. The detector demonstrates ex-
cellent operation over a wide range of input power. The
Schottky detector is biased at about 70µA. The hold
capacitor is external.
C2(µF) ≥ 1/(30 • f) where f is the lowest RF input
frequency (MHz)
C1 = C2
Gain Compression
In general, select C1 and C2 large enough to pass the
lowest expected RF signal frequency, as described by the
above formulas. But optimize C1 and C2, subject to this
constraint, to improve output slew rate and bandwidth,
and to enable good AC performance for the highest
expected RF signal frequency.
The gain compression circuit changes the feedback ratio
as the RF peak-detected input voltage increases above
60mV. Below 60mV, the DC voltage gain from the peak
detector to the buffer output is 4. Above 140mV, the DC
voltagegainisreducedto0.75. Thecompressionexpands
the low power detector range due to higher gain.
Modes of Operation
MODE
SHDN
Low
OPERATION
Disabled
Shutdown
Enable
High
Power Detect
5507f
5
LTC5507
U
W
U U
APPLICATIO S I FOR ATIO
R3*
22k
J1
R4*
E4
V
RF
IN
SHDN
CC
C1
C2
LTC5507
1
2
3
6
5
4
RF
SHDN
IN
JP1
PCAP
GND
V
CC
SHDN
R2*
68Ω
E2
E3
E1
V
V
V
OUT
V
CC
CC
OUT
C4*
0.1µF
C3*
100pF
C5*
GND
5507 F03
* OPTIONAL COMPONENTS
R2 AND C5 FORM AN OPTIONAL OUTPUT LOWPASS FILTER.
R3 IS USED FOR DEMO PURPOSES ONLY, AND IS NOT USED IN ACTUAL PRODUCT IMPLEMENTATION.
R4 CAN BE USED FOR INPUT POWER LIMITING OR BROADBAND IMPEDANCE MATCHING.
C3 AND C4 ARE OPTIONAL POWER SUPPLY FILTERS.
Figure 3. Evaluation Demo Board Schematic
5507f
6
LTC5507
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5507f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LTC5507
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5507f
LT/TP 0103 2K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
8
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2001
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