PN4392-TO-92-3L [Linear]
Transistor,;
| 型号： | PN4392-TO-92-3L |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
rDS(on) ≤ 30Ω
tON ≤ 15ns
FAST SWITCHING
2N SERIES
PN SERIES SST SERIES
SOT-23
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
TOP VIEW
1
D
3
G
Storage Temperature (2N)
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
2
S
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)@Tc=25°C
Continuous Power Dissipation (PN/SST)
Maximum Currents
1800mW3
350mW4
Gate Current
50mA
-40V
Maximum Voltages
Gate to Drain or Source (2N/PN)
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
Gate to Source
Breakdown Voltage
BVGSS
2N/PN/SST
-40
-40
-40
IG = -1µA, VDS = 0V
VDS = 20V, ID = 1nA
2N/PN
SST
-4
-4
-10
-10
1
-2
-2
-5
-5
1
-0.5
-0.5
-3
-3
1
Gate to Source
Cutoff Voltage
VGS(off)
VGS(F)
VDS = 15V, ID = 10nA
V
Gate to Source Forward Voltage
0.7
0.25
0.3
IG = 1mA, VDS = 0V
0.4
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
VDS(on) Drain to Source On Voltage
0.4
0.35
0.4
165
165
2N
PN
50
50
50
25
25
25
150
150
5
5
5
125
125
Drain to Source
IDSS
mA
VDS = 20V, VGS = 0V
Saturation Current2
SST
2N/SST
PN
-5
-5
-5
-100
-100
-100
IGSS
IG
Gate Leakage Current
Gate Operating Current
VGS = -20V, VDS = 0V
VDG = 15V, ID = 10mA
-1000
-1000
-1000 pA
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
STATIC ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
5
5
5
5
5
5
5
100
VDS = 20V, VGS = -5V
2N
100
VDS = 20V, VGS = -7V
VDS = 20V, VGS = -12V
VDS = 20V, VGS = -5V
VDS = 20V, VGS = -7V
VDS = 20V, VGS = -12V
VDS = 10V, VGS = -12V
VGS = 0V, ID = 1mA
100
ID(off)
Drain Cutoff Current
1000 pA
PN
1000
1000
100
30
SST
100
60
100
100
Ω
rDS(on)
Drain to Source On Resistance
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
gos
Forward Transconductance
Output Conductance
6
mS
µS
Ω
VDS = 20V, ID = 1mA
f = 1kHz
25
rds(on)
Drain to Source On Resistance
30
14
16
60
14
16
100
14
VGS = 0V, ID = 1mA
2N
12
12
VDS = 20V, VGS = 0V
f = 1MHz
Ciss
Input Capacitance
PN
SST
2N
16
13
3.3
3.5
3.6
3.2
3.4
3.5
2.8
3.0
3.1
3.5
5
VDS = 0V, VGS = -5V
f = 1MHz
PN
SST
2N
pF
3.5
5
Reverse Transfer
Capacitance
VDS = 0V, VGS = -7V
f = 1MHz
Crss
PN
SST
2N
3.5
5
VDS = 0V, VGS = -12V
f = 1MHz
PN
SST
VDS = 10V, ID = 10mA
f = 1kHz
nV/√Hz
en
Equivalent Input Noise Voltage
3
SWITCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
td(on)
tr
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
2N/PN
SST
2
2
15
5
15
5
15
5
Turn On Time
2N/PN
SST
2
2
ns
VDD = 10V, VGS(H) = 0V
2N/PN
SST
6
20
15
35
20
50
30
td(off)
6
Turn Off Time
2N/PN
SST
13
13
tf
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
SWITCHING CIRCUIT CHARACTERISTICS
SWITCHING TEST CIRCUIT
VDD
SYM.
VGS(L)
RL
4391
-12V
4392
-7V
4393
-5V
800Ω
12mA
1600Ω
6mA
3200Ω
3mA
RL
VGS(H)
ID(on)
OUT
VGS(L)
1k
51
51
SOT-23
0.89
1.03
0.37
0.51
1
3
2
1.78
2.05
2.80
3.04
0.210
0.170
1.20
1.40
0.89
1.12
2.10
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
*Dimensions in inches
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
3.
4.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Derate 10mW/°C above 25°C
Derate 2.8mW/°C above 25°C
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
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