RH1011FD_15 [Linear]
Voltage Comparator;型号: | RH1011FD_15 |
厂家: | Linear |
描述: | Voltage Comparator |
文件: | 总4页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RH1011
Voltage Comparator
W W U W
U
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The RH1011 is a general purpose comparator with signifi-
cantly better input characteristics than the LM111. Al-
thoughpincompatiblewiththeLM111, itoffersfourtimes
lower bias current, six times lower offset voltage and five
times higher voltage gain.
Supply Voltage (Pin 8 to Pin 4) ............................... 36V
Output to Negative Supply (Pin 7 to Pin 4) ............. 35V
Ground to Negative Supply (Pin 1 to Pin 4) ............ 30V
Differential Input Voltage ....................................... ±35V
Voltage at STROBE Pin (Pin 6 to Pin 8) .................... 5V
Input Voltage (Note 1) ....................... Equal to Supplies
Output Short-Circuit Duration............................. 10 sec
Operating Temperature Range
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
(Note 2) ........................................... –55°C to 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
U U
BUR -I CIRCUIT
15V
15V
1.3k
8
8
50k
100k
3
50k
2
3
5
1
+
–
2V
–
7
7
200Ω
OR
50k
2
1
+
4
4
604Ω
RH1011 BI
–15V
–15V
U W
U
PACKAGE I FOR ATIO
TOP VIEW
TOP VIEW
+
V
TOP VIEW
+
8
+
GND
+INPUT
–INPUT
NC
1
2
3
4
5
10 V
GND
+INPUT
–INPUT
1
2
3
4
V
8
7
6
5
OUTPUT
GND
7
5
1
3
9
8
7
6
OUTPUT
+
–
+
–
OUTPUT
BALANCE/
STROBE
BALANCE/
STROBE
6
2
NC
BALANCE/
STROBE
+INPUT
–
BALANCE
V
BALANCE
–INPUT
–
V
BALANCE
4
–
V
J8 PACKAGE
8-LEAD CERDIP
W PACKAGE
10-LEAD CERPAC
H PACKAGE
8-LEAD TO-5 METAL CAN
1
RH1011
(Preirradiation) (Note 10)
TABLE 1: ELECTRICAL CHARACTERISTICS
T = 25
°
C
SUB-
SUB-
GROUP
–55°C ≤ TA ≤ 125°C
MIN TYP MAX
A
SYMBOL PARAMETER
CONDITIONS
R ≤ 50kΩ
NOTES MIN TYP MAX GROUP
UNITS
V
Input Offset Voltage
3
4
1.5
2.0
1
1
3.0
3.0
2,3
2,3
mV
mV
OS
S
I
I
Input Offset Current
Input Bias Current
3,4
4
1
20
2,3
nA
OS
3
4
50
65
1
1
80
80
2,3
2,3
nA
nA
B
ΔV
Input Offset Voltage Drift
T
≤ T ≤ T
MAX
5,9
25
μV/°C
V/mV
V/mV
dB
OS
ΔT
MIN
A
Large Signal Voltage Gain V = ±15V, R = 1kΩ,
200
50
4
4
1
VOL
S
L
–10V ≤ V
≤ 14.5V
OUT
V = 5V, R = 500Ω,
0.5V ≤ V
S
L
≤ 4.5V
OUT
CMRR
Common Mode Rejection
Ratio
90
Input Voltage Range
V = ±15V
S
8,9
8,9
–14.5
0.5
13
3.0
–14.5
0.5
13
3.0
V
V
S
V = Single 5V
t
Response Time
6,9
11
250
ns
d
V
Output Saturation Voltage
V
= –5mV, I = 8mA
SINK
= 50mA
0.4
1.5
1
1
0.5
1.5
2,3
2,3
V
V
OL
IN
I
SINK
Output Leakage Current
V
V
= 5mV, V
= –15V,
10
1
500
2,3
nA
IN
GND
= 20V
OUT
Positive Supply Current
Negative Supply Current
Strobe Current
11
11
4.0
2.5
1
1
mA
mA
μA
Minimum to Ensure Output 7,9,11 500
Transistor is Turned Off
Input Capacitance
6
pF
(Postirradiation) (Note 10)
TABLE 1A: ELECTRICAL CHARACTERISTICS
10Krad(Si)
20Krad(Si)
50Krad(Si) 100Krad(Si) 200Krad(Si)
SYMBOL PARAMETER
CONDITIONS
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
V
Input Offset Voltage
Input Offset Current
Input Bias Current
1.5
4
1.5
4
1.5
4
2.5
20
4
mV
nA
OS
I
I
50
OS
50
100
150
200
300
nA
B
A
Large-Signal Voltage
Gain
R = 1kΩ,
200
90
200
90
150
90
100
90
50
86
V/mV
VOL
L
–10V ≤ V
≤ 14.5V
OUT
CMRR
Common Mode
Rejection Ratio
dB
Input Voltage Range
V = ±15V
S
8,9 –14.5 13 –14.5 13 –14.5 13 –14.5 13 –14.5 13
V
V
S
V = Single 5V
0.5
3.0
0.5
3.0
0.5 3.0
0.5
3.0 0.5
3.0
V
Output Saturation
Voltage
V
= –5mV, I = 8mA
SINK
= 50mA
11
0.4
1.5
0.4
1.5
0.4
1.5
0.4
1.5
0.4
1.5
V
V
OL
IN
I
SINK
Output Leakage
Current
V
V
= 5mV, V
= –15V
10
10
100
100
100
nA
IN
GND
= 20V
OUT
2
RH1011
(Postirradiation) (Note 10)
TABLE 1A: ELECTRICAL CHARACTERISTICS
10Krad(Si)
20Krad(Si)
50Krad(Si) 100Krad(Si) 200Krad(Si)
SYMBOL PARAMETER
Positive Supply Current
CONDITIONS
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
11
11
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
mA
mA
μA
Negative Supply Current
Strobe Current
Minimum to Ensure Output 7,9,11 500
Transistor is Turned Off
500
500
500
500
Input Capacitance
6 (Typ)
6 (Typ)
6 (Typ)
6 (Typ)
6 (Typ)
pF
Note 1: Inputs may be clamped to supplies with diodes so that maximum
input voltage actually exceeds supply voltage by one diode drop. See Input
Protection discussion in the LT®1011 data sheet.
Note 7: Do not short the STROBE pin to ground. It should be current
driven at 3mA to 5mA for the shortest strobe time. Currents as low as
500μA will strobe the RH1011 if speed is not important. External leakage
on the STROBE pin in excess of 0.2μA when the strobe is “off” can cause
offset voltage shifts.
Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the
LT1011 data sheet.
Note 9: Guaranteed by design, characterization or correlation to other
Note 2: T
= 150°C.
JMAX
Note 3: Output is sinking 1.5mA with V
= 0V.
OUT
Note 4: These specifications apply for all supply voltages from a single 5V
to ±15V, the entire input voltage range and for both high and low output
+
states. The high state is I
= 100μA, V
= (V – 1V) and the low state
SINK
OUT
tested parameters.
is I
= 8mA, V
= 0.8V. Therefore, this specication defines a worst-
SINK
OUT
–
case error band that includes effects due to common mode signals,
voltage gain and output load.
Note 10: V = ±15V, V = 0V, R = 0Ω, T = 25°C, V
= V , output at
S
CM
S
A
GND
Pin 7, unless otherwise noted.
Note 5: Drift is calculated by dividing the offset difference measured at
Note 11: V = 0V.
GND
minimum and maximum temperatures by the temperature difference.
Note 6: Response time is measured with a 100mV step and 5mV
overdrive. The output load is a 500Ω resistor tied to 5V. Time
measurement is taken when the output crosses 1.4V.
W U
TABLE 2: ELECTRICAL TEST REQUIRE E TS
PDA Test Notes
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
1*,2,3,4
1,2,3,4
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures (including Delta
parameters) of group A, subgroup 1, after burn-in divided by the total
number of devices submitted for burn-in in that lot shall be used to
determine the percent for the lot.
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group B and D End Point Electrical Parameters
(Method 5005)
1,2,3
* PDA Applies to subgroup 1. See PDA Test Notes.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
12V
5.1k
12Ω
5.1k
8
2
+
7
3
1
–
4
12Ω
–12V
RH1011 TDBC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
3
RH1011
TYPICAL PERFORMANCE CHARACTERISTICS
U W
Input Offset Current
Input Offset Voltage
Input Bias Current
8
6
30
20
V
R
CM
= ±15V
= 0Ω
S
S
V
V
= ±15V
CM
V
V
= ±15V
CM
S
S
= 0V
= 0V
300
200
100
0
V
= 0V
(3 TYPICAL UNITS)
4
10
2
0
0
–10
–20
–30
–40
–2
–4
–6
1
10
100
1000
1
10
100
1000
1
10
100
1000
TOTAL DOSE KRAD (Si)
TOTAL DOSE KRAD (Si)
TOTAL DOSE KRAD (Si)
RH1011 G01
RH1011 G03
RH1011 G02
Common Mode Rejection Ratio
Voltage Gain
700
600
500
400
300
200
100
0
130
120
110
100
90
V
R
CM
= ±15V
V
V
= ±15V
CM
S
L
S
= 1k
= –14.5V TO 13V
V
= 0V
80
70
60
1
10
100
1000
1
10
100
1000
TOTAL DOSE KRAD (Si)
TOTAL DOSE KRAD (Si)
RH1011 G04
RH1011 G05
I.D. No. 66-10-0159 Rev. D 0308
LT/LT 0308 REV D • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
4
●
●
© LINEAR TECHNOLOGY CORPORATION 1989
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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