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SD5000IS/B16LROHSSEL1125 [Linear]

Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-16;
SD5000IS/B16LROHSSEL1125
型号： SD5000IS/B16LROHSSEL1125
厂家： Linear    Linear
描述：

Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-16

开关 光电二极管 晶体管
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SD5000/5001/5400/5401  
QUAD N-CHANNEL LATERAL  
DMOS SWITCH  
Over Three Decades of Quality Through Innovation  
ZENER PROTECTED  
Product Summary  
Part Number  
V(BR)DS Min (V)  
VGS(th) Max (V)  
rDS(on) Max (Ω)  
70 @ VGS = 5 V  
70 @ VGS = 5 V  
70 @ VGS = 5 V  
75 @ VGS = 5 V  
75 @ VGS = 5 V  
Crss Max (pF)  
tON Max (ns)  
SD5000I  
20  
20  
10  
20  
10  
1.5  
1.5  
1.5  
1.5  
1.5  
0.5  
0.5  
0.5  
0.5  
0.5  
2
2
2
2
2
SD5000N  
SD5001N  
SD5400CY  
SD5401CY  
Features  
Benefits  
Applications  
Quad SPST Switch with Zener Input Protection  
Low Interelectrode Capacitance and Leakage  
Ultra-High Speed Switching―tON: 1 ns  
Ultra-Low Reverse Capacitance: 0.2 pF  
Low Guaranteed rDS @5 V  
High-Speed System Performance  
Fast Analog Switch  
Low Insertion Loss at High Frequencies Fast Sample-and-Holds  
Low Transfer Signal Loss  
Simple Driver Requirement  
Single Supply Operation  
Pixel-Rate Switching  
Video Switch  
Multiplexer  
Low Turn-On Threshold Voltage  
DAC Deglitchers  
High-Speed Driver  
Description  
The SD5000/5400 series of monolithic switches features four  
individual double-diffused enhancement-mode MOSFETs built  
on a common substrate. These bidirectional devices provide low  
on-resistance and low interelectrode capacitances to minimize  
insertion loss and crosstalk.  
ultra-fast switching speeds. For manufacturing reliability, these  
devices feature poly-silicon gates protected by Zener diodes  
The SD 5000/5400 are rated to handle ±10-V analog signals,  
while the SD5001/5401 are rated for ±5-V signals.  
Built on Siliconix’ proprietary DMOS process, the SD5000/5400  
series utilizes lateral construction to achieve low capacitance and  
For similar products packaged in TO-206AF (TO-72) and TO-  
253 (SOT-143) see the SD211DE/SST211 series.  
Dual-In-Line  
Narrow Body SOIC  
D1  
S1  
D4  
NC  
G4  
S4  
S2  
SUBSTRATE  
NC  
G1  
D1  
SUBSTRATE  
G1  
S1  
G2  
D2  
D3  
G3  
S3  
D4  
G4  
S4  
S2  
S3  
G2  
NC  
D2  
G3  
NC  
D3  
Plastic: SD5000N  
SD5001N  
Sidebraze: SD5000I  
Top View  
SD5400CY  
SD5401CY  
Top View  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 20113 12/16/2016 Rev#A10 ECN# SD5000/5001/5400/5401  
Absolute Maximum Ratings (TA = 25ºC Unless Otherwise Noted)  
Gate-Drain, Gate-Source Voltage  
(SD5000, SD5400)……………………………….……………+30V/-25V  
(SD5001, SD5401)……………………………………….……+25V/-15V  
Drain Current…………………………………………………….…...........50 mA  
Lead Temperature (1/16” from case for 10 seconds)……………………….300ºC  
Storage Temperature…………………………………………….…..-65 to 150ºC  
Operating Junction Temperature…..…………………………….…..-55 to 150ºC  
Gate-Substrate Voltage  
(SD5000, SD5400)………+30V/-0.3V  
(SD5001I, SD5401)...….…+25V/-0.3V  
(SD5000, SD5400)……………….20V  
(SD5001I, SD5401)……………….10V  
Power Dissipation”:  
(Package)…………………………….………500 mW  
(each Device)…..…………………….………300 mW  
Drain-Source Voltage  
Drain-Source-Substrate Voltage (SD5000, SD5400)……………….25V  
(SD5001I, SD5401)……………….15V  
Notes:  
a. SD5000/SD5001I derate 5 mW/C above 25ºC  
b. SD5400/SD5401 derate 4 mW/C above 25ºC  
Specificationsa  
Limits  
SD5000  
SD5400  
SD5001  
SD5401  
Parameter  
Symbolb  
Test Conditionsb  
Typc Min Max Min Max Unit  
Static  
Drain-Source Breakdown Voltage  
Source-Drain Breakdown Voltage  
Drain-Substrate Breakdown Voltage  
V(BR)DS  
V(BR)SD  
V(BR)DBO  
VGS=VBS=-5V, ID=10nA  
VGD=VBD=-5V, IS=10nA  
30  
22  
35  
20  
20  
25  
10  
10  
15  
V
VGB=0 V, ID=10µA, Source Open  
Source-Substrate  
Breakdown Voltage  
V(BR)SBO  
VGB=0 V, IS=10µA, Drain Open  
VDS= 10 V  
35  
25  
15  
0.4  
0.7  
0.9  
0.5  
0.8  
1
10  
10  
Drain-Source Leakage  
Source-Drain Leakage  
IDS(off)  
VGS= VBS=-5 V  
VDS= 15 V  
VDS= 20 V  
VSD= 10 V  
VSD= 15 V  
VSD= 20 V  
10  
nA  
ISD(off)  
VGD= VBD=-5 V  
10  
Gate Leakage  
IGBS  
VDB = VSB = 0 V, VGB =30V  
VDS = VGS, ID = I µA, VSB =0V  
SD5000 Series  
0.01  
0.8  
100  
1.5  
100  
1.5  
Threshold Voltage  
VGS(th)  
0.1  
0.1  
V
58  
60  
70  
75  
70  
75  
VGS = 5 V  
SD5400 Series  
VGS = 5 V  
Drain-Source On-Resistance  
rDS(on)  
VSB = 0 V  
ID = 1 mA  
VGS = 10 V  
VGS = 15 V  
VGS = 20 V  
VGS = 5 V  
38  
30  
26  
1
Ω
Resistance Match  
Dynamic  
∆rDS(on)  
5
5
VDS = 10 V  
VSB = 0 V  
lD = 20 mA  
f = 1 kHz  
SD5000 Series  
SD5400 Series  
12  
11  
10  
9
10  
9
Forward Transconductance  
gfs  
mS  
Gate Node Capacitance  
Drain Node Capacitance  
Source Node Capacitance  
Reverse Transfer Capacitance  
Crosstalk  
C(GS+GD+GB)  
C(GD+DB)  
C(GS+SB)  
Crss  
2.5  
2.0  
3.5  
3
3.5  
3
VDS = 10 V  
f = 1 MHz  
VGS = VBS = -15V  
SD5000 Series  
pF  
3.7  
5
5
0.2  
0.5  
0.5  
f = 3 kHz  
-107  
dB  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 20113 12/16/2016 Rev#A10 ECN# SD5000/5001/5400/5401  
Specificationsa  
Limits  
SD5001  
SD5401  
SD5000  
SD5400  
Parameter  
Switching  
Symbolb  
Test Conditionsb  
Typc Min Max Min Max Unit  
td(on)  
tr  
td(off)  
tf  
0.5  
0.6  
2
1
1
1
1
Turn-On Time  
Turn-Off Time  
VSB= 1-5 Vin, VGN 0 to 5 V, RG = 25 Ω  
VDD = 5 V, RL = 680 Ω  
ns  
6
Notes:  
DMCA  
a. TA = 25ºC unless otherwise noted.  
b. B is the body (substrate) and V(BR) is breakdown.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
Switching Time Test Circuit  
NOTES:  
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;  
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Linear Integrated Systems.  
Linear Integrated Systems (LIS), established in 1987, third-generation precision semiconductor company providing high-quality  
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil  
and Micro Power Systems by company Founder John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the  
director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro  
Power Systems.  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 20113 12/16/2016 Rev#A10 ECN# SD5000/5001/5400/5401  

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