SD5001N-PDIP-16L [Linear]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | SD5001N-PDIP-16L |
| 厂家： | 
Linear |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总3页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD5000/5001/5400/5401
QUAD N-CHANNEL LATERAL
DMOS SWITCH
ZENER PROTECTED
Product Summary
Part Number
V(BR)DS Min (V)
VGS(th) Max (V)
rDS(on) Max (Ω)
70 @ VGS = 5 V
70 @ VGS = 5 V
70 @ VGS = 5 V
75 @ VGS = 5 V
75 @ VGS = 5 V
Crss Max (pF)
tON Max (ns)
SD5000I
20
20
10
20
10
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
SD5000N
SD5001N
SD5400CY
SD5401CY
Features
Benefits
Applications
Quad SPST Switch with Zener Input Protection
Low Interelectrode Capacitance and Leakage
Ultra-High Speed Switching―tON: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed rDS @5 V
High-Speed System Performance
Fast Analog Switch
Low Insertion Loss at High Frequencies Fast Sample-and-Holds
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Pixel-Rate Switching
Video Switch
Multiplexer
Low Turn-On Threshold Voltage
DAC Deglitchers
High-Speed Driver
Description
The SD5000/5400 series of monolithic switches features four
individual double-diffused enhancement-mode MOSFETs built
on a common substrate. These bidirectional devices provide low
on-resistance and low interelectrode capacitances to minimize
insertion loss and crosstalk.
ultra-fast switching speeds. For manufacturing reliability, these
devices feature poly-silicon gates protected by Zener diodes
The SD 5000/5400 are rated to handle ±10-V analog signals,
while the SD5001/5401 are rated for ±5-V signals.
Built on Siliconix’ proprietary DMOS process, the SD5000/5400
series utilizes lateral construction to achieve low capacitance and
For similar products packaged in TO-206AF (TO-72) and TO-
253 (SOT-143) see the SD211DE/SST211 series.
Dual-In-Line
Narrow Body SOIC
D1
D4
NC
G4
S4
S2
S1
SUBSTRATE
NC
G1
D1
SUBSTRATE
G1
S1
G2
D2
S2
S3
D3
G3
S3
D4
G4
S4
G2
NC
D2
G3
NC
D3
Plastic: SD5000N
SD5001N
Sidebraze: SD5000I
Top View
Top View
SD5400CY
SD5401CY
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20113 6/20/2013 Rev#A9 ECN# SD5000/5001/5400/5401
Absolute Maximum Ratings (TA = 25ºC Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage
(SD5000, SD5400)……………………………….……………+30V/-25V
(SD5001, SD5401)……………………………………….……+25V/-15V
Drain Current…………………………………………………….…...........50 mA
Lead Temperature (1/16” from case for 10 seconds)……………………….300ºC
Storage Temperature…………………………………………….…..-65 to 150ºC
Operating Junction Temperature…..…………………………….…..-55 to 150ºC
Gate-Substrate Voltage
(SD5000, SD5400)………+30V/-0.3V
(SD5001I, SD5401)...….…+25V/-0.3V
(SD5000, SD5400)……………….20V
(SD5001I, SD5401)……………….10V
Power Dissipation”:
(Package)…………………………….………500 mW
(each Device)…..…………………….………300 mW
Drain-Source Voltage
Drain-Source-Substrate Voltage (SD5000, SD5400)……………….25V
(SD5001I, SD5401)……………….15V
Notes:
a. SD5000/SD5001I derate 5 mW/C above 25ºC
b. SD5400/SD5401 derate 4 mW/C above 25ºC
Specificationsa
Limits
SD5000
SD5400
SD5001
SD5401
Parameter
Symbolb
Test Conditionsb
Typc Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Drain-Substrate Breakdown Voltage
V(BR)DS
V(BR)SD
V(BR)DBO
VGS=VBS=-5V, ID=10nA
VGD=VBD=-5V, IS=10nA
30
22
35
20
20
25
10
10
15
V
VGB=0 V, ID=10µA, Source Open
Source-Substrate
Breakdown Voltage
V(BR)SBO
VGB=0 V, IS=10µA, Drain Open
VDS= 10 V
35
25
15
0.4
0.7
0.9
0.5
0.8
1
10
10
Drain-Source Leakage
Source-Drain Leakage
IDS(off)
VGS= VBS=-5 V
VDS= 15 V
VDS= 20 V
VSD= 10 V
VSD= 15 V
VSD= 20 V
10
nA
ISD(off)
VGD= VBD=-5 V
10
Gate Leakage
IGBS
VDB = VSB = 0 V, VGB =30V
VDS = VGS, ID = I µA, VSB =0V
SD5000 Series
0.01
0.8
100
1.5
100
1.5
Threshold Voltage
VGS(th)
0.1
0.1
V
58
60
70
75
70
75
VGS = 5 V
SD5400 Series
VGS = 5 V
Drain-Source On-Resistance
rDS(on)
VSB = 0 V
ID = 1 mA
VGS = 10 V
VGS = 15 V
VGS = 20 V
VGS = 5 V
38
30
26
1
Ω
Resistance Match
Dynamic
∆rDS(on)
5
5
VDS = 10 V
VSB = 0 V
lD = 20 mA
f = 1 kHz
SD5000 Series
SD5400 Series
12
11
10
9
10
9
Forward Transconductance
gfs
mS
Gate Node Capacitance
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
Crosstalk
C(GS+GD+GB)
C(GD+DB)
C(GS+SB)
Crss
2.5
2.0
3.5
3
3.5
3
VDS = 10 V
f = 1 MHz
VGS = VBS = -15V
SD5000 Series
pF
3.7
5
5
0.2
0.5
0.5
f = 3 kHz
-107
dB
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20113 6/20/2013 Rev#A9 ECN# SD5000/5001/5400/5401
Specificationsa
Limits
SD5001
SD5401
SD5000
SD5400
Parameter
Switching
Symbolb
Test Conditionsb
Typc Min Max Min Max Unit
td(on)
tr
td(off)
tf
0.5
0.6
2
1
1
1
1
Turn-On Time
Turn-Off Time
VSB= 1-5 Vin, VGN 0 to 5 V, RG = 25 Ω
VDD = 5 V, RL = 680 Ω
ns
6
Notes:
DMCA
a. TA = 25ºC unless otherwise noted.
b. B is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Switching Time Test Circuit
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20113 6/20/2013 Rev#A9 ECN# SD5000/5001/5400/5401
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