SST4117-SOT-23 [Linear]

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN;
SST4117-SOT-23
型号: SST4117-SOT-23
厂家: Linear    Linear
描述:

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

开关 光电二极管 晶体管
文件: 总1页 (文件大小:278K)
中文:  中文翻译
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SST4117  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix SST4117  
The SST4117 is an Ultra-High Input Impedance N-Channel JFET  
FEATURES  
The SST4117 provides ultra-high input impedance. The  
device is specified with a 10-pA limit and is ideal for use  
as a high-impedance sensitive front-end amplifier.  
DIRECT REPLACEMENT FOR SILICONIX SST4117  
LOW POWER  
IDSS<90 µA  
IGSS<10 pA  
MINIMUM CIRCUIT LOADING  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
SST4117 Benefits:  
ƒ
Insignificant Signal Loss/Error Voltage  
with High-Impedance Source  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain or Gate to Source (Note 2)  
ƒ
ƒ
ƒ
Low Power Consumption (Battery)  
Maximum Signal Output, Low Noise  
High Sensitivity to Low-Level Signals  
65°C to +175°C  
55°C to +150°C  
SST4117 Applications:  
300mW  
50mA  
40V  
ƒ
ƒ
ƒ
ƒ
High-Impedance Transducer  
Smoke Detector Input  
Infrared Detector Amplifier  
Precision Test Equipment  
SST4117 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IDSS  
CHARACTERISTIC  
MIN  
40  
0.6  
0.03  
‐‐  
‐‐  
70  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
1.8  
0.09  
10  
25  
210  
3
UNITS  
V
V
mA  
pA  
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Saturation Current  
Gate Leakage Current  
IG = 1µA, VDS = 0V  
VDS = 10V, ID = 1nA  
VDS = 10V, VGS = 0V  
VGS = 20V, VDS = 0V  
IGSS  
Click To Buy  
VGS = 20V, VDS = 0V, 150°C  
VDS = 10V, VGS = 0V, f = 1kHz  
gfs  
gos  
Ciss  
Crss  
Forward Transconductance(Note 3)  
Output Conductance  
µmho  
pF  
Input Capacitance  
‐‐  
‐‐  
3
1.5  
VDS = 10V, VGS = 0V, f = 1MHz  
Reverse Transfer Capacitance  
1 . Absolute maximum ratings are limiting values above which SST4117 serviceability may be impaired.  
2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged  
3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)  
NOTES  
Micross Components Europe  
Available Packages:  
SOT-23 (Top View)  
SST4117 in SOT-23  
SST4117 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed  
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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