SST5018-SOT-23 [Linear]
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23, 3 PIN;
| 型号： | SST5018-SOT-23 |
| 厂家： | 
Linear |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23, 3 PIN |
| 文件： | 总1页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST5018
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST5018
The SST5018 is a single P-Channel JFET switch
FEATURES
This p-channel analog switch is designed to provide low
DIRECT REPLACEMENT FOR SILICONIX SST5018
ZERO OFFSET VOLTAGE
on-resistance and fast switching.
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
rDS(on) ≤ 75Ω
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
SST5018 Benefits:
‐55°C to +200°C
‐55°C to +200°C
Low Insertion Loss
No offset or error voltage generated by closed
switch
500mW
Purely resistive
SST5018 Applications:
Gate Current (Note 1)
IG = ‐50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
SST5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VDS(on)
IDSS
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Drain to Source On Voltage
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
MIN
30
‐‐
‐‐
‐10
‐‐
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
10
‐0.5
‐‐
UNITS
V
CONDITIONS
IG = 1µA, VDS = 0V
VDS = ‐15V, ID = ‐1µA
VGS = 0V, ID = ‐6mA
VDS = ‐20V, VGS = 0V
VGS = 15V, VDS = 0V
VDS = ‐15V, VGS = 12V
VDS = ‐15V, VGS = 7V
VDG = ‐15V, IS = 0A
ID = ‐1mA, VGS = 0V
mA
nA
IGSS
ID(off)
2
Drain Cutoff Current
‐10
‐10
‐2
µA
nA
Ω
IDGO
rDS(on)
Drain Reverse Current
Drain to Source On Resistance
‐‐
75
Click To Buy
SST5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
rDS(on)
Ciss
CHARACTERISTIC
Drain to Source On Resistance
Input Capacitance
MIN
‐‐
‐‐
TYP.
‐‐
‐‐
MAX
75
45
UNITS
Ω
pF
CONDITIONS
ID = 0A, VGS = 0V, f = 1kHz
VDS = ‐15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 12V, f = 1MHz
Crss
Reverse Transfer Capacitance
‐‐
‐‐
10
SST5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
15
20
15
50
VGS(L) = 12V
VGS(H) = 0V
Turn On Rise Time
ns
td(off)
tf
Turn Off Time
See Switching Circuit
Turn Off Fall Time
Note 1 ‐ Absolute maximum ratings are limiting values above which SST5018 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
SWITCHING TEST CIRCUIT
SST5018 SWITCHING CIRCUIT PARAMETERS
SOT-23 (Top View)
VDD
VGG
RL
‐6V
Available Packages:
12V
SST5018 in SOT-23
SST5018 in bare die.
910Ω
220Ω
‐6mA
RG
ID(on)
Please contact Micross for full
package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
相关型号：
SST5019-SOT-23
TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, SOT-23, 3 PIN, FET General Purpose Small Signal
MICROSS
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