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U309-TO-18-3L-ROHS [Linear]

Transistor,;
U309-TO-18-3L-ROHS
型号： U309-TO-18-3L-ROHS
厂家： Linear    Linear
描述：

Transistor,
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U/J/SST308  
SERIES  
SINGLE N-CHANNEL HIGH  
FREQUENCY JFET  
FEATURES  
Direct Replacement For SILICONIX U/J/SST308 SERIES  
U SERIES  
J SERIES  
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Gpg = 11.5dB  
NF = 2.7dB  
TOP VIEW  
Maximum Temperatures  
Storage Temperature  
-55 to 150°C  
-55 to 150°C  
SST SERIES  
SOT-23  
Junction Operating Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (J/SST)4  
Continuous Power Dissipation (U)5  
Maximum Currents  
TOP VIEW  
1
3
2
D
S
350mW  
500mW  
G
Gate Current (J/SST)  
10mA  
20mA  
Gate Current (U)  
Maximum Voltages  
Gate to Drain  
-25V  
-25V  
Gate to Source  
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)  
SYMBOL  
BVGSS  
VGS(F)  
IG  
CHARACTERISTIC  
MIN TYP MAX UNIT  
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Forward Voltage  
Gate Operating Current  
-25  
0.7  
IG = -1µA, VDS = 0V  
IG = 10mA, VDS = 0V  
VDG = 9V, ID = 10mA  
VGS = 0V, ID = 1mA  
V
1.15  
-15  
35  
pA  
rDS(on)  
en  
Drain to Source On Resistance  
Equivalent Noise Voltage  
Ω
6
nV/√Hz VDS = 10V, ID = 10mA, f = 100Hz  
f = 105MHz  
1.5  
2.7  
16  
NF  
Gpg  
gfg  
Noise Figure  
Power Gain2  
f = 450MHz  
f = 105MHz  
f = 450MHz  
f = 105MHz  
f = 450MHz  
dB  
11.5  
14  
VDS = 10V, ID = 10mA  
Forward  
Transconductance  
13  
mS  
f = 105MHz  
f = 450MHz  
0.16  
0.55  
gog  
Output Conductance  
Gate Reverse Current  
IGSS  
-1  
nA  
VGS = -15V, VDS = 0V  
Linear Integrated Systems  
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
1/31/12  
Rev#A5 ECN#U/J/SST 308  
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
J/SST308  
J/SST309  
J/SST310  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
VGS(off) Gate to Source Cutoff Voltage  
-1  
-6.5  
75  
-1  
-4  
-2  
-6.5  
75  
V
VDS = 10V, ID = 1nA  
IDSS  
Ciss  
Crss  
gfs  
Source to Drain Saturation Current3  
Input Capacitance  
12  
12  
30  
24  
mA  
VDS = 10V, VGS = 0V  
4
VDS = 10V, VGS = -10V  
f = 1MHz  
pF  
Reverse Transfer Capacitance  
Forward Transconductance  
Output Conductance  
1.9  
14  
8
10  
8
mS  
VDS = 10V, ID = 10mA  
f = 1kHz  
gos  
110  
250  
250  
250  
µS  
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
U308  
U309  
U310  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
VGS(off) Gate to Source Cutoff Voltage  
-1  
-6.5  
75  
5
-1  
-4  
30  
5
-2.5  
24  
-6.5  
75  
5
V
VDS = 10V, ID = 1nA  
IDSS  
Ciss  
Crss  
gfs  
Source to Drain Saturation Current3  
Input Capacitance  
12  
12  
mA  
VDS = 10V, VGS = 0V  
4
VDS = 10V, VGS = -10V  
f = 1MHz  
pF  
Reverse Transfer Capacitance  
Forward Transconductance  
Output Conductance  
1.9  
14  
2.5  
2.5  
2.5  
10  
10  
10  
mS  
VDS = 10V, ID = 10mA  
f = 1kHz  
gos  
110  
250  
250  
250  
µS  
SOT-23  
0.89  
1.03  
0.37  
0.51  
1
3
2
1.78  
2.05  
2.80  
3.04  
0.210  
0.170  
1.20  
1.40  
0.89  
1.12  
2.10  
2.64  
0.085  
0.180  
0.013  
0.100  
0.55  
DIMENSIONS IN  
MILLIMETERS  
NOTES  
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.  
2. Measured at optimum input noise match.  
3.  
4.  
5.  
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%  
Derate 2.8mW/ºC above 25ºC  
Derate 4mW/ºC above 25ºC  
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its  
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Linear Integrated Systems.  
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing  
high-quality discrete components. Expertise brought to LIS is based on processes and products developed at  
Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé  
of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and  
vice president of R&D at Intersil, and founder/president of Micro Power Systems.  
Linear Integrated Systems  
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
1/31/12  
Rev#A5 ECN#U/J/SST 308  

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