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MAGX-000912-125L00 [MA-COM]

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128Î¼s Pulse, 10% Duty; 氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 960-1215兆赫， 128Î¼s脉冲， 10 ％占空比

MAGX-000912-125L00


元器件型号：	MAGX-000912-125L00
生产厂家：	M/A-COM TECHNOLOGY SOLUTIONS, INC.
描述和应用：	GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128Î¼s Pulse, 10% Duty 氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 960-1215兆赫， 128Î¼s脉冲， 10 ％占空比晶体晶体管脉冲
PDF文件：	总6页 (文件大小：791K)
下载文档：	下载PDF数据表文档文件
型号参数：MAGX-000912-125L00参数

MAGX-000912-250L00

GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128Î¼s Pulse, 10% Duty

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57 MA-COM

MAGX-000912-500L00

GaN on SiC Depletion-Mode Transistor Technology

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28 MA-COM

MAGX-000912-500L00_15

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-000912-500L0S

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-000912-500L0S

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-000912-500L0X

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-000912-SB0PPR

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128Î¼s Pulse, 10% Duty

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3 MA-COM

MAGX-000912-SB1PPR

GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128Î¼s Pulse, 10% Duty

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5 MA-COM

MAGX-000912-SB3PPR

GaN on SiC Depletion-Mode Transistor Technology

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8 MA-COM

MAGX-001090-600L00

GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

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19 MA-COM

MAGX-001090-600L0S

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-001090-600L0X

GaN on SiC HEMT Pulsed Power Transistor

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0 MA-COM

MAGX-001090-SB0PPR

GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

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10 MA-COM

MAGX-001214-125L00

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300Î¼s Pulse, 10% Duty

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9 MA-COM

MAGX-001214-125L00-PROD

GaN on SiC HEMT Pulsed Power Transistor 125W Peak

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105 MA-COM

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