GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的, 100W的峰值, 500US脉冲,占空比为10%