GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle氮化镓HEMT脉冲功率晶体管2.7 - 3.5 GHz频段, 40W峰值, 300US脉冲,占空比为10%