MMK110A140B [MACMIC]
110A Thyristor Module;
| 型号： | MMK110A140B |
| 厂家： | 
MACMIC |
| 描述： | 110A Thyristor Module |
| 文件： | 总4页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMK110A160B
110A Thyristor Module
February 2017
Version 1
RoHS Compliant
APPLICATIONS
PRODUCT FEATURES
□ Electrically Isolated by DBC Ceramic
□ High Surge Current Capability
□ Low Inductance Package
□ DC Motor Control and Drives
□ Battery Charges ,Heater controls,Light dimmers
□ Static switches
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Values
Symbol
Parameter/Test Conditions
Unit
V
MMK110A120B
MMK110A140B
MMK110A160B
VRRM
VDRM
VRSM
Repetitive Peak Reverse Voltage
Repetitive Peak Off State Voltage
Non-Repetitive Peak Reverse Voltage
1200
1200
1300
1400
1400
1500
1600
1600
1700
Symbol
IT(AV)
Parameter/Test Conditions
Values
110
Unit
A
Average On State Current
R.M.S. On State Current
Single phase, half wave, 180°conduction, Tc= 80℃
Single phase, half wave, 180°conduction, Tc =80℃
1/2 cycle, 50HZ, peak value, TJ =45℃
IT(RMS)
170
2000
Non Repetitive Surge On State
Current
ITSM
1/2 cycle, 60HZ, peak value, TJ =45℃
2200
1/2 cycle, 50HZ, peak value ,TJ =45℃
20.0
I2t
KA2S
For Fusing
1/2 cycle, 60HZ, peak value, TJ =45℃
20.0
TJ
Junction Temperature
-40 to +125
-40 to +125
3000
℃
℃
TSTG
VISO
Storage Temperature Range
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
Recommended（M6）
Recommended（M5）
V
Torque Module to Sink
3～5
Nm
Nm
K /W
g
Torque Module Electrodes
2.5～5
0.25
RthJC
Junction to Case Thermal Resistance
Weight
110
MacMic Science & Technology Co., Ltd.
3
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
MMK110A160B
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
IDRM
Parameter/Test Conditions
Min.
Typ.
Max.
25
Unit
mA
VD = VDRM, TJ = 125℃
Maximum Peak Off-State Current
Maximum Peak Reverse Current
Maximum on-state voltage drop
VR = VRRM, TJ = 125℃
IRRM
VTM
VTO
rT
25
ITM=280A,td=10 ms, half sine
V
V
1.65
0.9
2.8
4.0
2.5
1.7
270
150
80
TJ = 125℃
For power-loss calculations only
mΩ
VA=6V, RA=1Ω,TJ = -40℃
VA=6V, RA=1Ω
VGT
Max. required DC gate voltage to trigger
V
1.0
75
VA=6V, RA=1Ω,TJ = 125℃
VA=6V, RA=1Ω,TJ = -40℃
VA=6V, RA=1Ω
IGT
Max. required DC gate current to trigger
mA
VA=6V, RA=1Ω,TJ = 125℃
VGD
IGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃
Maximum holding current
V
0.25
6
mA
mA
mA
IH
100
200
200
400
12
IL
Maximum latching current
PGM
PG(AV)
IGM
Maximum peak gate power
W
Maximum average gate power
3.0
3.0
10
Maximum peak gate current
A
V
-VGM
Maximum peak negative gate voltage
Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated
VDRM
dv/dt
di/dt
1000
150
V/μs
A/μs
Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=280A, rated VDRM
4
MMK110A160B
500
400
300
200
100
0
250
25℃
200
150
100
50
180°
DC
120°
max.
θ:Conduction Angle
0
0
0.5
1
1.5
TM（V）
2
2.5
0
30
60
90
120
150
180
V
IT(AV)(A)
Figure 1. SCR Average On State Current vs Forward Voltage
Figure 2. SCR Power dissipation vs IT(AV)
180°Conduction Angle
150
125
100
75
2000
1600
1200
50HZ
800
50
400
0
25
0
0
25
50
75
100
125
150
1
10
100
TC(℃)
Cycles
Figure 3. Max Non Repetitive Surge On State Current
Figure 4. On State current vs Case temperaturer
1
0.1
0.01
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration(S)
Figure 5. Transient Thermal Impedance
5
MMK110A160B
100
10
1
(1) PGM =200W, tp = 300us
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
Rectangular gate pulse
a)Recommended load line for rated
di/dt:20V,20Ω,tr =0.5us, tp≥6us
b)Recommended load line for ≤30%
rated di/dt:15V, 40Ω ,tr =1us, tp ≥6 us
TJ=-40℃
TJ=25℃
TJ=125℃
(1)
(2)
(3)
(4)
VGD
Frequency Limited by PG(AV)
IGD
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current(A)
Figure 6. Gate Characteristics
Dimensions in (mm)
Figure 7. Package Outline
6
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