AMM-7210CH [MARKIMICROWAVE]
22 GHz â 57 GHz GaAs Driver Amplifier;
| 型号： | AMM-7210CH |
| 厂家： | 
Marki |
| 描述： | 22 GHz â 57 GHz GaAs Driver Amplifier |
| 文件： | 总16页 (文件大小：5191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
22 GHz – 57 GHz GaAs Driver Amplifier
AMM-7210
1. Device Overview
1.1 General Description
The AMM-7210 is a general-purpose broadband MMIC driver amplifier
that provides +21 dBm output power suitable for driving a Marki H or L
diode mixer at 22-57 GHz and S diode mixer from 25-50 GHz. The small die
size allows it to be used in a variety of applications, and has built in DC-
blocking capacitors on the input and output.
UC Module
Bare Die
1.3 Applications
1.2 Features
▪
Mobile test and
▪
▪
▪
▪
+21 dBm Output Power
measurement equipment
Broadband Performance
Small Die size
.s2p S-Parameters: AMM-7210CH
▪
▪
▪
Radar and satellite communications
5G Transceivers
Driver amplifier L,H,S – diode mixers
1.4 Functional Block Diagram
+Vd
- Vg
RF in
RF out
1.5 Part Ordering Options1
Part
Green
Status
Product
Lifecycle
Export
Classification
Description
Number
Package
AMM-7210CH
AMM-7210UC
Wire Bondable Die Bare Die
RoHS
RoHS
Pre-Release
Pre-Release
3A001.b.2.d
EAR99
Connectorized
UC
Module
1
Refer to our website for a list of definitions for terminology presented in this table.
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AMM-7210
Table of Contents
3.5 Electrical Specifications .................. 8
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
3.6 AMM-7210CH Typical Performance
Plots................................................... 9
3.7 AMM-7210UC Typical Performance
Plots................................................. 10
3.8 Typical Marki Mixer Performance Plots
with AMM-7210UC LO Driver............. 12
4. Application Information .................... 13
4.1 AMM-7210CH Application Circuit .. 13
2. AMM-7210 Port Configurations and
Functions ............................................... 3
2.1 AMM-7210CH Port Diagram........... 3
2.2 AMM-7210CH Port Functions......... 4
2.3 AMM-7210UC Port Diagram........... 5
2.4 AMM-7210UC Port Functions......... 5
3. Specifications ................................... 6
3.1 Absolute Maximum Ratings.............. 6
3.2 Package Information ....................... 6
3.3 Recommended Operating Conditions . 7
4.2 Best Practices to Prevent Oscillation
........................................................ 14
4.3 Constant Drain Current vs. Constant
Gate Voltage Operation ...................... 15
5. Mechanical Data............................. 15
5.1 AMM-7210CH Outline Drawing ..... 15
5.2 AMM-7210UC Package Outline
Drawing ............................................ 16
3.4 AMM-7210CH and AMM-7210UC
Sequencing Requirements ..................... 7
Revision History
Revision Code
Comment
Pre-Release
Revision Date
Feburary 2021
PRE
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AMM-7210
2. AMM-7210 Port Configurations and Functions
2.1 AMM-7210CH Port Diagram
A port diagram of the AMM-7210CH is shown below.
Vd 2
Vd 3
Vd 1
RF In
RF Out
Vg
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AMM-7210
2.2 AMM-7210CH Port Functions
Port
Function
Description
Equivalent Circuit for Package
This is the RF Input port of the
RF In
RF
In
amplifier die.
It is internally DC
RF Input
blocked and RF matched to 50 Ω. RF
input pad is GSG with 175 µm pitch.
This is the RF Output port of the
RF Out
amplifier die.
It is internally DC
RF
Out
RF Output blocked and RF matched to 50 Ω. RF
output pad is GSG with 175 µm
pitch.
Vd1
Vd2
Pad Vd 1 supplies drain voltage to
the first stage of the 3-stage
Drain
Supply
Vd 1
Vd 2
amplifier IC. Apply gate voltage Vg
Port 1
before applying drain voltage.
Pad Vd 2 supplies drain voltage to
the second stage of the 3-stage
Drain
Supply
amplifier IC. Apply gate voltage Vg
Port 2
before applying drain voltage.
Vd3
Pad Vd 3 supplies drain voltage to
the third stage of the 3-stage
Drain
Supply
Vd 3
amplifier IC. Apply gate voltage Vg
Port 3
before applying drain voltage.
The Vg pad is connected resistively
on chip. The user should apply
between -0.4V and -0.6V to Vg pad
before applying positive DC voltage
Gate Bias
Voltage
…
Vg
to any Vd port.
Lower (more
Pad
negative) voltages on a Vg pad will
result in lower drain current and
lower small signal gain.
Vg
Bottom side must be connected to a
DC/RF ground potential with high
thermal and electrical conductivity.
GND
GND
Ground
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AMM-7210
2.3 AMM-7210UC Port Diagram
A port diagram of the AMM-7210UC is shown below.
GND
Vd
V+
microwave
Input
Output
RF In
RF Out
AMM7210UC
D/C
V-
Vg
GND
2.4 AMM-7210UC Port Functions
Port
Function
Description
Equivalent Circuit for Package
RF In
This is the RF Input port of the
amplifier module. It is internally DC
blocked and RF matched to 50 Ω.
RF In
RF Input
RF Out
This is the RF Output port of the
amplifier module. It is internally DC
blocked and RF matched to 50 Ω.
RF
Out
RF Output
Vd
The Vd pin supplies drain voltage to the
amplifier IC. Apply gate voltage Vg
before applying drain voltage.
Drain Supply
Pin
Vd
The Vg pin supplies negative control
voltage to the amplifier and controls
Gate Bias
Pin
the amplifier gain.
Lower (more
…
Vg
negative) voltages on a Vg pad will
result in lower drain current and lower
small signal gain.
Vg
Exterior housing must be connected to
a DC/RF ground potential with high
thermal and electrical conductivity.
GND
GND
Ground
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AMM-7210
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may become inoperable or have a reduced
lifetime.
Parameter
Positive Drain Supply Voltage (Vd)
Maximum Rating
Units
4.5
-2
V
V
Negative Bias Voltage (Vg)
RF Input Power
+15
dBm
-
Output Load VSWR
7:1
Operating Temperature
-40 to +85
-65 to +150
TBD
˚C
Storage Temperature
˚C
휃퐽푐, Junction to Case Thermal Resistance
Max Junction Temperature for MTTF > 1E6 hours
ºC/W
˚C
175
Max Power Dissipation for MTTF of 1E6 hours at 85˚C
Baseplate Temperature
TBD
mW
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
AMM-7210UC
TBD
Weight
12.4
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AMM-7210
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Recommended Operating Conditions2
TA, Ambient Temperature
Min Nominal Max Units
-40
+2
+25
+3
+85
+4
°C
V
Power Supply DC Voltage (Vd)
Power Supply DC Current (Id) (No RF Input)2, 3
Negative Bias Voltage (Vg)
100
-0.7
+8
180
-0.5
+11
300
-0.2
+13
mA
V
Input Power for Saturation
dBm
3.4 AMM-7210CH and AMM-7210UC Sequencing Requirements
Turn-on Procedure:
1) Apply negative bias to Vg
2) Apply Vd
Turn-off Procedure:
1) Turn off Vd
2) Turn off Vg
2
Power Supply DC current should be modified by changing bias voltage Vg to maintain junction
temperature within MTTF target for given operating conditions.
Recommended operating current conditions without RF input applied.
3
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AMM-7210
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system.
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per
lot basis
Parameter
Test Conditions
Frequency
Min
Typical
Units
22 GHz – 30 GHz
+19
Saturated Output Power4
3V/-0.5V bias
dBm
30 GHz – 48 GHz
48 GHz – 57 GHz
22 GHz – 30 GHz
30 GHz – 48 GHz
+17
+20.5
+18
13
10
14.5
Small Signal Gain
3V/-0.5V bias
45 GHz – 57 GHz
22 GHz – 57 GHz
11
14
Input Return Loss
dB
Output Return Loss
22 GHz – 57 GHz
22 GHz – 57 GHz
22 GHz – 57 GHz
14
47
3V/-0.5V Bias
3V/-0.5V bias
Reverse Isolation
Noise Figure
6.3
3V/-0.4V
3V/-0.5V
3V/-0.6V
-
-
-
230
180
130
Bias Requirements5
Input IP3 (IIP3)
mA
22 GHz – 57 GHz
22 GHz – 57 GHz
+13
+27
3V/-0.5V,
-20 dBm Input
Power
dBm
dBm
Output IP3 (OIP3)
Output P1dB
3V/-0.5V bias
3V/-0.5V bias
22 GHz – 57 GHz
22 GHz – 57 GHz
+19
+11
Input Power for
Saturation
4
Saturated Output Power specification defined using the AMM-7210UC P5dB compression curve
shown in section 3.7.
5
Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.
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AMM-7210
3.6 AMM-7210CH Typical Performance Plots
Small Signal Gain (dB) vs. Frequency, Vd = 3V
Small Signal Gain (dB) vs. Frequency, Vd = 3.5V
30
25
20
15
10
5
30
25
20
15
10
5
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
3.5V / -0.4V Bias
3.5V / -0.5V Bias
3.5V / -0.6V Bias
0
0
15
15
15
20
20
20
25
30
35
40
45
50
55
60
60
60
15
20
25
30
35
40
45
50
55
60
Frequency (GHz)
Frequency (GHz)
Small Signal Gain (dB) vs. Frequency, Vd = 4V
Reverse Isolation (dB) vs. Frequency, Vd = 3V
30
25
20
15
10
5
0
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
4V / -0.4V Bias
4V / -0.5V Bias
4V / -0.6V Bias
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
Frequency (GHz)
Frequency (GHz)
Output Return Loss (dB) vs. Frequency, Vd = 3V
Input Return Loss (dB) vs. Frequency, Vd = 3V
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
25
30
35
40
45
50
55
15
20
25
30
35
40
45
50
55
60
Frequency (GHz)
Frequency (GHz)
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AMM-7210
3.7 AMM-7210UC Typical Performance Plots
Small Signal Gain (dB) vs. Frequency, Vd = 3V
Output Compression Curves (dBm) vs. Frequency, 3V/-0.5V Bias
30
25
20
15
10
5
30
25
20
15
10
5
3.0V / -0.4V Bias
3.0V / -0.5V Bias
3.0V / -0.6V Bias
OP5dB
OP3dB
OP1dB
0
0
15
20
25
30
35
40
45
50
55
60
15
15
15
15
20
20
20
25
30
35
40
45
50
55
60
60
60
Frequency (GHz)
Frequency (GHz)
Small Signal Gain (dB) vs. Frequency, Vd = 3.5V
Output Compression Curves (dBm) vs. Frequency, 3.5V/-0.5V Bias
30
25
20
15
10
5
30
25
20
15
10
5
3.5V / -0.4V Bias
3.5V / -0.5V Bias
3.5V / -0.6V Bias
OP5dB
OP3dB
OP1dB
0
0
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
Frequency (GHz)
Frequency (GHz)
Input Return Loss (dB) vs. Frequency, Vd = 3V
Output Return Loss (dB) vs. Frequency, Vd = 3V
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
3.0V / -0.4V Bias
3.0V / -0.5V Bias
3.0V / -0.6V Bias
3.0V / -0.4V Bias
3.0V / -0.5V Bias
3.0V / -0.6V Bias
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
Frequency (GHz)
Frequency (GHz)
Noise Figure (dB) vs. Frequency
Reverse Isolation (dB) vs. Frequency, Vd = 3V
10
9
8
7
6
5
4
3
2
1
0
0
-10
-20
-30
-40
-50
-60
-70
-80
3.0V / -0.5V Bias
3.5V / -0.5V Bias
3.0V / -0.4V Bias
3.0V / -0.5V Bias
3.0V / -0.6V Bias
15
20
25
30
35
40
45
50
55
60
20
25
30
35
40
45
50
55
Frequency (GHz)
Frequency (GHz)
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AMM-7210
OIP3 (dBm) vs. Frequency, Vd = 3V
IIP3 (dBm) vs. Frequency, Vd = 3V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
3V / -0.4V Bias
3V / -0.5V Bias
3V / -0.6V Bias
0
0
15
20
25
30
35
40
45
50
55
60
15
20
25
30
35
40
45
50
55
60
Frequency (GHz)
Frequency (GHz)
Saturated Output Power (dBm) vs. Frequency,
3V/-0.5V Bias, Over Temp.
Small Signal Gain(dB) vs. Frequency, 3V/-0.5V Bias, Over Temp.
30
25
20
15
10
5
30
25
20
15
10
5
-40 C
25 C
85 C
0 C
55 C
-40 C
25 C
85 C
0 C
55 C
0
0
15
20
25
30
35
40
45
50
55
60
15
20
25
30
35
40
45
50
55
60
Frequency (GHz)
Frequency (GHz)
Quiescent Drain Current (mA) vs. Vg
Quiescent Drain Current (mA) vs. Vd
260
240
220
200
180
160
140
120
100
300
280
260
240
220
200
180
160
140
120
100
80
Vg = -0.4V
Vg = -0.5V
Vg = -0.6V
Vd = 3.5V
Vd = 3V
Vd = 2.5V
1.5
2
2.5
3
3.5
4
4.5
-0.7
-0.65
-0.6
-0.55
-0.5
Vg (V)
-0.45
-0.4
-0.35
-0.3
Vd (V)
Drain Current (mA) vs. RF Input power, 3V/-0.5V Bias
400
350
300
250
200
150
100
25 GHz
35 GHz
45 GHz
55 GHz
30 GHz
40 GHz
50 GHz
Space Intentionally Left Blank
-10
-8
-6
-4
-2
0
2
4
6
8
10
RF Input Power (dBm)
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AMM-7210
3.8 Typical Marki Mixer Performance Plots with AMM-7210UC LO Driver6
MM1-1857H Config. A Conv. Loss (dB) vs. Frequency, 91 MHz IF,
AMM-7210UC LO Driver, 3V / -0.5V Bias
MM1-1857H Config. A IIP3 (dBm) vs. Frequency, 91 MHz IF,
AMM-7210UC LO Driver, 3V / -0.5V Bias
-4
-6
30
25
20
15
10
5
-8
-10
-12
-14
-16
-18
0 dBm LO Input
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
0 dBm LO Input
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
0
15
20
25
30
35
40
45
50
55
60
15
20
25
30
35
40
45
50
55
60
RF Frequency (GHz)
RF Frequency (GHz)
MM1-1857H Config. A OIP3 (dBm) vs. Frequency, 91 MHz IF,
AMM-7210UC LO Driver, 3V / -0.5V Bias
30
25
20
15
10
5
0 dBm LO Input
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
0
15
20
25
30
35
40
45
50
55
60
RF Frequency (GHz)
6
LO Input Powers specified as the input power into the AMM-7210UC LO driver
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AMM-7210
4. Application Information
4.1 AMM-7210CH Application Circuit
Below are the recommended application circuits for the AMM-7210CH.
Vd
A
50Ω
trace
50Ω
trace
Vd3
Vd2
Vd1
RF In
RF In
RF Out
RF Out
Vg
50Ω
50Ω
B
A
Vg
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AMM-7210
One can also choose to break out Vd1, Vd2, and Vd3 to separate power supply lines to
increase gain control and further strengthen amplifier stability.
Vd2
Vd1
Vd3
A
A
A
50Ω
trace
50Ω
trace
Vd2 Vd3
RF Out
Vd1
RF In
RF In
RF Out
50Ω
Vg
50Ω
B
A
Vg
Designator
Description
Sample Part Number
MVB4080X104ZGH5R3
A
B
Presidio 0.1 µF + 1800 pF Capacitor
PRT135-14x12x10A10R00FQE
PPI 10Ω Wire-bondable series resistor
4.2 Best Practices to Prevent Oscillation
Millimeter wave amplifiers are sensitive to low frequency oscillations caused by a DC/RF ground
path with excessive inductance. Ensure the chip is grounded with low inductance along the DC
path to voltage supply ground. The bypass arrangement is also critical to reducing the possibility of
oscillation, and the series resistor B (shown above) with value 10 – 100 Ω is necessary to help
strengthen the amplifier stability.
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AMM-7210
4.3 Constant Drain Current vs. Constant Gate Voltage Operation
The AMM-7210 pHEMT amplifier can be biased with a constant gate and drain voltage, or with a
constant drain current by regulating the gate voltage. Using a constant gate and drain voltage
reduces circuit complexity, but has variable current consumption during operation. However,
regulating the gate voltage using feedback circuitry which controls the drain current to a constant
value minimizes unit-to-unit variation in gain, output power, and compression points.
Under small signal excitation at a fixed temperature, these two approaches are equivalent because
the current draw versus frequency is relatively constant in small signal. However, they will diverge
in large signal conditions, where the drain current is affected the input signal’s frequency and power.
The output power in saturation is relatively unchanged, as it is more strongly dependent on the drain
voltage. However, output referred 1 dB compression point will decrease by 2-3 dB when operated
with a constant drain current.
5. Mechanical Data
5.1 AMM-7210CH Outline Drawing
PROJECTION
INCH
.0541
[MM]
[1.374]
.0387
[.982]
.0050
[.127]
.0010 [.025] Spacing,
4 PL
.0269
[.682]
Min Clearance
.0039 [.100] x .0039 [.100]
VD Pad, 3PL
.0039
[.098]
.0150
[.382]
.0111
[.282]
.0180
[.457]
.0190
[.482]
.0259
[.657]
RF
(IN)
.0458
RF
[1.163]
(OUT)
.0079 [.200] x .0039 [.100]
Signal Pad, 2PL
.0039 [.100] x .0039 [.100]
Ground Pad Vias, 4PL
.0039
[.098]
.0039
[.099]
.0112
[.286]
.0020
[.051]
.0039 [.100] x .0039 [.100]
VG Pad,1PL
Notes:
1) RF GSG probe pitch is 175 µm.
2) CH substrate is 0.002 inches thick GaAs.
3) I/O trace finish is 4 µm Au. Ground finish is 5 µm Au.
4) Die are not passivated
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AMM-7210
5.2 AMM-7210UC Package Outline Drawing
0.52
[13.21]
0.51
[12.88]
0.17
[4.32]
0.14
[3.43]
PROJECTION
INCH
[MM]
V+
0.22
0.28
[7.11]
[5.46]
microwave
0.56
[14.22]
*Notes:
1. All measurements are
typical.
Input
Output
AMM7210UC
D/C
2. Ground lug and bias
pins are solderable.
V-
Ø.067 Thru, 4 PL
0.43
[10.92]
[1.70]
Port
Input
Output
Connector Type
1.85 mm Female
1.85 mm Male
typ.
0.44
[11.07]
0.04
[1.07]
Note: UC-Package Connectors are not removeable
0.39
[9.88]
0.19
0.19
[4.94]
[4.94]
1.46
[36.96]
.
Marki Microwave reserves the right to make changes to the product(s) or information contained
herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Marki Microwave assume any
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