APM-7099PA [MARKIMICROWAVE]
0.01GHz â 20 GHz Low Phase Noise Amplifier;
| 型号： | APM-7099PA |
| 厂家： | 
Marki |
| 描述： | 0.01GHz â 20 GHz Low Phase Noise Amplifier |
| 文件： | 总15页 (文件大小：1113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099
1. Device Overview
1.1 General Description
The APM-7099 is a broadband distributed, low phase noise driver
amplifier designed to provide a saturated +25 dBm output power with
low DC power consumption. This amplifier uses GaAs HBT technology
for low phase noise, and is optimized to drive our NLTL multiplier line. It
can also provides sufficient power to drive the LO port of an S-diode
mixer from 10 MHz to 15 GHz or of an H or L diode mixer from
10 MHz to 20 GHz. This amplifier can be operated with a variety of
bias conditions for both low power and high-power applications.
PA Module
Bare Die
1.3 Applications
1.2 Features
▪
Mobile test and measurement
▪
-167 dBc/Hz phase noise at 10 kHz
equipment
offset frequency
▪
▪
▪
Radar and satellite communications
5G Transceivers
Driver amplifier for S, H, and L –
diode mixers
NLTL Driver
Suitable as a T3 driver
▪
▪
▪
▪
▪
▪
+25 dBm output power
Low DC power consumption
Positive-only biasing
No sequencing required
Unconditionally stable
.s2p S-Parameters: APM-
7099CH.s2p
▪
▪
1.4 Functional Block Diagram
+VC
RF Input
RF Output
+VB
1.5 Part Ordering Options1
Part
Product
Lifecycle
Export
Classification
Description
Number
Package Green Status
APM-7099CH
APM-7099PA
Wire Bondable Die Bare Die
RoHS
RoHS
Active
Active
EAR99
Connectorized
Module
PA
EAR99
1
Refer to our website for a list of definitions for terminology presented in this table.
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APM-7099
3.4 Sequencing Requirements ............... 7
3.5 Electrical Specifications .................. 8
Table of Contents
3.6 APM-7099CH Typical Performance
Plots................................................... 9
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
3.7 APM-7099PA Typical Performance
Plots................................................. 10
3.8 Typical Performance Plots of Marki
MT3H-0113H with APM-7099PA LO
Driver............................................... 12
3.9 Time Domain Plots........................ 13
3.10 Harmonic Generation.................. 13
4. Application Information .................... 14
4.1 APM-7099CH Application Circuit... 14
5. Mechanical Data............................. 15
5.1 APM-7099CH Outline Drawing...... 15
2. APM-7099 Port Configurations and
Functions ............................................... 3
2.1 APM-7099CH Port Diagram ........... 3
2.2 APM-7099CH Port Functions.......... 4
2.3 APM-7099PA Port Diagram............ 5
2.4 APM-7099PA Port Functions.......... 5
3. Specifications ................................... 6
3.1 Absolute Maximum Ratings.............. 6
3.2 Package Information ....................... 6
3.3 Recommended Operating Conditions . 7
5.2 APM-7099PA Package Outline
Drawing ............................................ 15
Revision History
Revision Code
Comment
Revision Date
-
October 2020
Datasheet Initial Release
Updated maximum input power
and min specs
A
March 2021
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APM-7099
2. APM-7099 Port Configurations and Functions
2.1 APM-7099CH Port Diagram
A port diagram of the APM-7099CH is shown below.
CAP1
RF In
RF Out/
VC
CAP2
VB
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APM-7099
2.2 APM-7099CH Port Functions
Equivalent Circuit for
Package
Port
Function
Description
This is the RF Input port of the amplifier
die. It is RF matched to 50 Ω, and is DC
coupled. RF input pad is GSG with
175 µm pitch.
RF In
RF In
RF Input
Port VB is the DC voltage bias pad for
the current mirror that control the
collector current supplied to the
amplifier. Larger voltages result in a
higher current draw through port RF
Out/VC, effectively functioning as a gain
control pin of the amplifier. See section
3.6 for performance at different bias
conditions.
VB
Current
Mirror Bias
Port
VB
CAP1
CAP1 is a pad that allows the user to
attach additional off chip bypass
capacitance to the VC supply line. A
0.1µF capacitor is recommended
Off-Chip Cap
Port 1
CAP1
CAP2
…
CAP2 is a pad that allows the user to
attach additional off chip bypass
capacitance to provide adequate AC
…
Off-Chip Cap
Port 2
grounding
termination.
A
0.1µF
capacitor is recommended
CAP2
This is the amplifier die’s RF Output and
positive VC supply voltage port. It is RF
matched to 50 Ω and is DC coupled. RF
output pad is GSG with 175 µm pitch.
Must have less than 7:1 VSWR when
operating with voltage larger 8V on VC
RF Out/VC
RF Output and
Collector
Supply Port
RF
Out/VC
Backside of the IC must be connected to
a DC/RF ground with high thermal and
electrical conductivity.
GND
Ground
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APM-7099
2.3 APM-7099PA Port Diagram
A port diagram of the APM-7099PA is shown below.
RF Out
GND
+VC
+VB
RF In
2.4 APM-7099PA Port Functions
Equivalent Circuit for
Package
Port
Function
Description
RF In
This is the RF Input port of the amplifier
die. It is RF matched to 50 Ω, and has
built-in DC blocking capacitors.
RF In
RF Input
VC
Port VC is the DC voltage supply for that
supplies the amplifier’s collector current.
It is connected internally through the
amplifier die’s RF output port.
Collector DC
Supply Port
VC
VB
Port VB is the DC voltage bias for the
current mirror that controls collector
current supplied to the amplifier. Larger
voltages result in a higher current draw
through port VC, effectively functioning
as a gain control pin of the amplifier. See
section 3.6 for performance at different
bias conditions.
VB
Base Current
Mirror Bias
Port
This is the amplifier’s RF Output. It is RF
matched to 50 Ω and has built-in DC
blocking capacitors. Must have less than
7:1 VSWR when operating with voltage
larger 8V on VC
Housing or outside of the coaxial cables
must be connected to a DC/RF ground
potential with high thermal and electrical
conductivity.
RF Out
RF Out
GND
RF Output
Ground
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APM-7099
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may become inoperable or have a reduced
lifetime.
Parameter
Maximum Rating
Units
Collector Positive Bias Voltage (VC)
Positive Bias Current (Ic)
9
225
V
mA
V
Positive DC Current Mirror Voltage (VB)
RF Input Power (10 MHz – 3GHz)
RF Input Power (3 GHz – 20 GHz)
Output Load VSWR
9
+12
dBm
dBm
-
+15
7:1
Operating Temperature
-40 to +85
-65 to +150
56
˚C
Storage Temperature
˚C
휃퐽퐶, Junction to Ambient Thermal Resistance
Max Junction Temperature for MTTF > 1E6 hours
ºC/W
˚C
125
Max Power Dissipation for MTTF of 1E6 hours at 85˚C
Baseplate Temperature
709
mW
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
APM-7099PA
TBD
Weight
15.0g
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APM-7099
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Recommended Operating Conditions – CH bare die package2
Min Nominal Max Units
TA, Ambient Temperature
-40
+5
38
-
+25
+8
72
-
+85
+9
°C
V
Power Supply DC Voltage (VC)
Power Supply DC Current (Ic) (No RF Input)2, 3
Power Supply DC Current (with RF Input)4
132
180
mA
mA
Recommended Operating Conditions – PA connectorized
Min Nominal Max Units
module package5
TA, Ambient Temperature
-40
+5
38
-
+25
+8
72
-
+40
+9
°C
V
Power Supply DC Voltage (VC)
Power Supply DC Current (Ic) (No RF Input)2, 3
Power Supply DC Current (with RF Input)4
Bias Voltage (VB)
132
225
+9
mA
mA
V
+5
+10
+7
+11
Input Power for Saturation
+12
dBm
3.4 Sequencing Requirements
There is no sequencing required to power up or power down the amplifier.
Amplifier must have an output load connected during operation.
2
Ic should be modified by changing bias voltage VB to maintain junction temperature within MTTF
target for given operating conditions.
Recommended operating current conditions without RF input applied. Please see typical
3
performance plots on page 12 for relationship between RF input power and DC current draw.
4
Operation above recommended max power supply DC current will result in reduced MTTF.
Module conditions provided for laboratory conditions. For use in test systems with extended
5
lifetimes bare die operating conditions should be followed.
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APM-7099
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system.
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per
lot basis
Test
Conditions
Parameter
Frequency
Min
Typical
Units
10 MHz – 15 GHz
19
25
Saturated Output Power6
Small Signal Gain
8V/7V bias
dBm
15 GHz – 20 GHz
10 MHz – 15 GHz
15 GHz – 20 GHz
10 MHz – 20 GHz
10 MHz – 20 GHz
10 MHz – 20 GHz
23
14
12
14
20
36
10
8V/7V bias,
-15 dBm
Input Power
Input Return Loss
Output Return Loss
Reverse Isolation
dB
mA
-30 dBm
Input Power
Noise Figure
10 MHz – 20 GHz
5
8V/6V
8V/7V
8V/8V
8V/6V
8V/7V
8V/8V
-
-
-
-
-
-
53
72
96
3.4
4.2
5
Collector Current7, Ic
Current Mirror Current, Ib
Input IP3 (IIP3)
12
8V/7V bias,
-15 dBm
Input Power
10 MHz – 20 GHz
10 MHz – 20 GHz
dBm
Output IP3 (OIP3)
Output P1dB
Input Power for
Saturation
24
8V/7V bias
8V/7V bias
10 MHz – 20 GHz
10 MHz – 20 GHz
23
+12
dBm
Phase Noise @ 10 kHz
Offset
+12 dBm
Input power
1 GHz
-167
dBc/Hz
6
Saturated Output Power specification defined using the APM-7099PA P3dB compression curve
shown in section 3.7.
7
Bias conditions for Ic and Ib tested with no RF input power. See section 3.7 for DC current vs.
RF power. Bias conditions presented as VC/VB.
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APM-7099
3.6 APM-7099CH Typical Performance Plots
Small Signal Gain(dB) vs. Frequency, Vc = 8V
Small Signal Gain (dB) vs. Frequency, Vc = 7V
25
20
15
10
5
25
20
15
10
5
Vb = 5V, Ic = 38mA
Vb = 6V, Ic = 54mA
Vb = 7V, Ic = 73mA
Vb = 5V, Ic = 38mA
Vb = 6V, Ic = 53mA
Vb = 7V, Ic = 72mA
0
0
0
5
10
15
20
25
25
25
30
30
30
25
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Small Signal Gain (dB) vs. Frequency, Vc = 6V
Small Signal Gain (dB) vs. Frequency, 8V/7V Bias
25
20
15
10
5
25
20
15
10
5
Vb = 5V, Ic = 37mA
Vb = 6V, Ic = 53mA
Vb = 7V, Ic = 71mA
0
0
1
10
100
1,000
0
5
10
15
20
Frequency (MHz)
Frequency (GHz)
Output Return Loss (dB) vs. Frequency, Vc = 8V
Input Return Loss (dB) vs. Frequency, Vc = 8V
0
0
Vb = 5V
Vb = 6V
Vb = 7V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
Vb = 5V
Vb = 6V
Vb = 7V
0
5
10
15
20
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Reverse Isolation (dB) vs. Frequency, Vc = 8V
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
Vb = 5V
Vb = 6V
Vb = 7V
0
5
10
15
20
Title
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APM-7099
3.7 APM-7099PA Typical Performance Plots
Small Signal Gain (dB) vs. Frequency, Vc = 8V
Output Comp. Points (dBm) vs. Frequency, 8V/7V
25
20
15
10
5
30
25
20
15
10
5
OP1dB
OP3dB
Vb = 5V, Ic = 38 mA
Vb = 6V, Ic = 54 mA
Vb = 7V, Ic = 73 mA
0
0
0
5
10
15
20
25
30
0
5
5
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Small Signal Gain (dB) vs. Frequency, Vc = 7V
Small Signal Gain (dB) vs. Frequency, Vc = 6V
25
25
20
15
10
5
Vb = 5V, Ic = 38 mA
Vb = 6V, Ic = 53 mA
Vb = 7V, Ic = 72 mA
20
15
10
5
Vb = 5V, Ic = 38 mA
Vb = 6V, Ic = 53 mA
Vb = 7V, Ic = 72 mA
0
0
0
5
10
15
20
25
30
0
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Input Return Loss (dB) vs. Frequency, Vc = 8V
Output Return Loss (dB) vs. Frequency, Vc = 8V
0
0
Vb = 5V
Vb = 6V
Vb = 7V
Vb = 8V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
Vb = 5V
Vb = 6V
Vb = 7V
Vb = 8V
0
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Residual Phase Noise (dBc/Hz) vs. Offset Frequency
F = 1 GHz, +13 dBm Input
Reverse Isolation (dB) vs. Frequency, Vc = 8V
0
-10
-20
-30
-40
-50
-60
-70
-130
Vb = 5V
Vb = 6V
Vb = 7V
-135
-140
-145
-150
-155
-160
-165
-170
-175
-180
0
5
10
15
20
25
30
10
100
1,000
10,000
100,000
1,000,000
Frequency (GHz)
Offset Frequency (Hz)
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APM-7099
Saturated Output Power (dBm) vs. Frequency,
Over Temperature, 8V/7V
Noise Figure (dB) vs. Frequency
12
10
8
30
25
20
15
10
5
6
4
-40C
0C
25C
85C
65C
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Harmonic Response (dBm) vs. Input Frequency,
+10 dBm input, 8V/7V
Small Signal Gain (dB) vs. Frequency, Over Temperature, 8V/7V
25
20
15
10
5
30
25
20
15
10
5
0
Fundamental
2F
3F
4F
5F
-40C
25C
85C
0C
-5
65C
-10
-15
-20
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Input Frequency (GHz)
Frequency (GHz)
OIP3 (dBm) vs. Frequency, -15 dBm Input
IIP3 (dBm) vs. Frequency, -15 dBm Input
40
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
8V/7V
7V/7V
6V/6V
8V/7V
7V/7V
6V/6V
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
PAE, Gain, and Output Power vs. RF Input Power, 8V/7V, F = 15 GHz
PAE, Gain, and Output Power vs. RF Input Power, 8V/7V F = 5 GHz
30
25
20
15
10
5
30
25
20
15
10
5
PAE (%)
Gain (dB)
Output Power (dBm)
PAE (%)
Gain (dB)
Output Power (dBm)
0
0
-15
-10
-5
0
5
10
15
-15
-10
-5
0
5
10
15
RF Input Power (dBm)
RF Input Power (dBm)
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APM-7099
Ic (mA) vs. RF Input Power, 8V/7V8
Ic, Ib (mA) vs. Vb, Vc = 8V
240
220
200
180
160
140
120
100
80
100
90
6
5.5
5
80
1 GHz
5 GHz
70
Ic
4.5
4
Ib
10 GHz
20 GHz
15 GHz
Max Ic
60
Ic
50
40
3.5
3
Ib
60
30
2.5
-20
-15
-10
-5
0
5
10
15
5
5.5
6
6.5
7
7.5
8
RF Input Power (dBm)
Vb (V)
8
3.8 Typical Performance Plots of Marki MT3H-0113H with APM-7099PA LO
Driver9
MT3H-0113H Config. A IIP3 (dBm) vs. Frequency, 1 GHz IF,
APM-7099PA LO Driver, 8V/7V Bias
MT3H-0113H Config. A Conv. Loss (dB) vs. Frequency, 1 GHz IF,
APM-7099PA LO Driver, 8V/7V Bias
40
0
-2
35
30
25
20
15
10
5
-4
-6
-8
-10
-12
-14
-16
-18
-20
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
+12 dBm LO Input
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
+12 dBm LO Input
0
1
2
3
4
5
6
7
8
9
10
11
12
13
1
2
3
4
5
6
7
8
9
10
11
12
13
RF Frequency (GHz)
RF Frequency (GHz)
MT3H-0113H Config. A OIP3 (dBm) vs. Frequency, 1 GHz IF,
APM-7099PA LO Driver, 8V/7V Bias
40
35
30
25
20
15
10
5
+3 dBm LO Input
+6 dBm LO Input
+9 dBm LO Input
+12 dBm LO Input
0
1
2
3
4
5
6
7
8
9
10
11
12
13
RF Frequency (GHz)
8
Operation above Max Ic Limit = 180mA, will result in reduced MTTF
LO Input Powers specified as the input power into the APM-7099PA LO driver
9
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APM-7099
3.9 Time Domain Plots10
Output Voltage (V) vs. Time, F = 1 GHz, 8V/7V, +11 dBm Input
Output Voltage (V) vs. Time, F = 5 GHz, 8V/7V, +12 dBm Input
6
4
6
4
2
2
0
0
-2
-4
-6
-2
-4
-6
0
500
1000
1500
2000
0
50
100
150
200
250
300
350
400
Time (ps)
Time (ps)
Output Voltage (V) vs. Time, F = 10 GHz, 8V/7V, +12 dBm Input
6
4
2
0
-2
-4
-6
0
50
100
150
200
250
300
350
400
Time (ps)
3.10 Harmonic Generation
The APM-7099’s harmonic generation can be controlled by adjusting the supply and bias voltages.
Decreasing the base voltage VB will increase the even harmonic generation and odd harmonic
suppression. To increase the odd harmonic generation and even harmonic suppression, decrease
the collector voltage VC. The optimal bias condition for even harmonic generation is VC = 8V and
VB = 5V, while the optimal bias condition for odd harmonic generation is VC = 5V and VB = 8V.
10
Fast rise time is desirable for linear T3 mixer operation.
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APM-7099
4. Application Information
4.1 APM-7099CH Application Circuit
Below is the recommended application circuit for the APM-7099CH.
VC
A
D
E
1
50Ω
trace
20 Ω
CAP1
50Ω
RF Out
trace
RF Out/
VC
C
RF In
F
RF In
50Ω
CAP2
4.7 n
VB
50Ω
A
B
D
1
VB
Designator
Description
Sample Part Number
A
B
Presidio 0.1 µF + 1800 pF Capacitor
Tecdia 0.030”x0.030” 150 pF Capacitor
0402 4.7 nF SMT Capacitor
MVB4080X104ZGH5R3
CMS151Z2NC-CK
CL05B472KB5NNNC
CL05A105KO5NNNC
CPF0402B20RE1
BT-0034SMG
C*
D
E
0402 1.0 µF SMT Capacitor
0402 20훀 SMT Resistor
F
Marki Surface-Mount Bias Tee; 5 MHz – 34 GHz
Note*: If the user intends to operate the APM-7099CH at less than 10 MHz input frequency,
then the input DC blocking capacitor value must be no greater 4.7nF to avoid catastrophic
damage.
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APM-7099
5. Mechanical Data
5.1 APM-7099CH Outline Drawing
5.2 APM-7099PA Package Outline Drawing
.
Marki Microwave reserves the right to make changes to the product(s) or information contained
herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Marki Microwave assume any
liability whatsoever arising out of the use or application of any product
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