MMQ-40125HM [MARKIMICROWAVE]
GaAs MMIC Millimeter Wave 4x Multiplier;
| 型号： | MMQ-40125HM |
| 厂家： | 
Marki |
| 描述： | GaAs MMIC Millimeter Wave 4x Multiplier |
| 文件： | 总10页 (文件大小：684K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs MMIC Millimeter Wave 4x Multiplier
1. Device Overview
MMQ-40125H
1.1 General Description
Die
MMQ-40125H is a MMIC millimeter wave 4x multiplier fabricated
with GaAs Schottky diodes. MMQ-40125H operates over a 10
to 31.25 GHz input frequency range or a quadrupled output
frequency range of 40 to 125 GHz. Operation past 125GHz is
pending verification. Contact factory for information. MMQ-
40125H is available as a connectorized coaxial module using 1.0
mm connectors on the output. Wire bondable die are also
available.
Module
1.2 Features
1.3 Applications
▪ Low loss die and package
▪ Up to 125GHz 4th harmonic
output tone
▪ mmWave frequency synthesis
▪ LO signal chain for mmWave
mixers
▪ Convenient +0 dBm output level
▪ Coax connector module
1.4 Functional Block Diagram
1.5 Part Ordering Options1
Part
Product
Lifecycle
Export
Classification
Description
Number
Package Green Status
MMQ-40125HCH
MMQ-40125HM
Wire bondable die
CH
M
Active
3A001.b.7.1
3A001.b.7.1
RoHS
Connectorized
module; 1.0 mm
connector output2
Active
1
2
Refer to our website for a list of definitions for terminology presented in this table.
Default configurations has 1.0 mm female connector on the output. Consult factory for other
connector options.
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MMQ-40125H
3.3 Recommended Operating Conditions . 4
3.4 Sequencing Requirements ............... 4
3.5 Electrical Specifications .................. 5
3.6 Typical Performance Plots ............... 6
4. Die Mounting Recommendations ......... 8
Table of Contents
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
2. Port Configurations and Functions ...... 3
2.1 Port Diagram................................. 3
2.2 Port Functions............................... 3
3. Specifications ................................... 4
3.1 Absolute Maximum Ratings.............. 4
3.2 Package Information ....................... 4
Revision History
4.1 Mounting and Bonding
Recommendations ................................ 8
4.2 Handling Precautions ...................... 8
4.3 Bonding Diagram............................ 9
5. Mechanical Data............................. 10
5.1 CH Package Outline Drawing ......... 10
5.2 M Package Outline Drawing........... 10
Revision Code
Comment
Initial Datasheet Release
Revision Date
October 2020
-
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MMQ-40125H
2. Port Configurations and Functions
2.1 Port Diagram
A top-down view of the MMQ-40125H’s CH package outline drawing is shown below. The
MMQ-40125H should only be used in the forward direction, with the input and output
ports given in Port Functions.
2.2 Port Functions
Equivalent Circuit
Port
Function
Description
for Package
Port 1 is DC coupled to the diodes for
the CH and M packages. Blocking
capacitor is optional.
Port 1
Input
Port 2 is DC open for the CH and M
package.
Port 2
GND
Output
Ground
CH package ground path is provided
through the substrate and ground bond
pads. M package ground provided through
metal housing and outer coax conductor.
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MMQ-40125H
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may be inoperable or have a reduced
lifetime.
Parameter
Maximum Rating
Units
Port 1 DC Current
Port 2 DC Current
25
NA
mA
mA
dBm
°C
Power Handling, at any Port
Operating Temperature
Storage Temperature
+25
-55 to +100
-65 to +125
ºC
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
M Package
1A
Weight
15 g
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Min Nominal
Max
Units
TA, Ambient Temperature
Input Power
-55
+25
+20
+100
+23
°C
dBm
3.4 Sequencing Requirements
There is no requirement to apply power to the ports in a specific order. However, it is
recommended to provide a 50Ω termination to each port before applying power. This is a
passive diode doubler that requires no DC bias.
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MMQ-40125H
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Typical data shown is
for the connectorized M package quadrupler used in the forward direction with a nominal
+20 dBm sine wave input3.
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. RF testing of our die is performed on a sample
basis to verify conformance to datasheet guaranteed specifications.
Parameter
Test Conditions
Min Typical Max Units
Input (Port 1) Frequency Range
10
31.25
GHz
dBm
Output (Port 2) Frequency
Range4
40
125
Input Power
+20
-8
+23
Input = 10 – 12.5 GHz
Output = 40 - 50 GHz
Input = 12.5 - 15 GHz
Output = 50 - 60 GHz
Input = 15 - 27.5 GHz
Output = 60 - 110 GHz
Input = 27.5 - 31.25 GHz
Output = 110 - 125 GHz
Input = 10 – 12.5 GHz
Output = 40 - 50 GHz
Input = 12.5 - 15 GHz
Output = 50 - 60 GHz
Input = 15 - 27.5 GHz
Output = 60 - 110 GHz
Input = 27.5 - 31.25 GHz
Output = 110 - 125 GHz
Input = 10 – 31.25 GHz
Output = 10 – 31.25 GHz
Input = 10 – 31.25 GHz
Output = 20 – 62.5 GHz
Input = 10 – 31.25 GHz
Output = 30 – 93.75 GHz
Input = 10 – 31.25 GHz
Output = 10 – 31.25 GHz
Input = 10 – 31.25 GHz
Output = 20 – 62.5 GHz
Input = 10 – 31.25 GHz
Output = 30 – 93.75 GHz
-3
0
4F Output Power
dBm
-3
-5
28
23
20
25
19
17
12
41
38
34.5
4F Conversion Loss (CL)
dB
23
1F
2F
3F
1F
2F
3F
Suppression5,6
Isolation7
dBc
dB
3
Input signal generated using a Ka band distributed amplifier. Measured 1-3F harmonic output
powers will vary depending on driver amplifier’s harmonic content.
4
Output return loss measured with a fixed frequency large signal 31.25 GHz input.
Suppressions and isolations figures reported include measurement amplifier’s harmonic’s leakage
5
tones.
6
Suppression is defined as the harmonic power relative to the 4F quadrupled output power.
Isolation is defined as the harmonic power relative to the 1F fundamental input power.
7
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MMQ-40125H
3.6 Typical Performance Plots
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MMQ-40125H
4. Die Mounting Recommendations
4.1 Mounting and Bonding Recommendations
Marki MMICs should be attached directly to a ground plane with conductive epoxy. The
ground plane electrical impedance should be as low as practically possible. This will
prevent resonances and permit the best possible electrical performance. Datasheet
performance is only guaranteed in an environment with a low electrical impedance ground.
Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the
mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip.
Cure epoxy according to manufacturer instructions.
Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding
force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as
short as possible <0.31 mm (12 mils).
Circuit Considerations – 50 Ω transmission lines should be used for all high frequency
connections in and out of the chip. Wirebonds should be kept as short as possible, with
multiple wirebonds recommended for higher frequency connections to reduce parasitic
inductance.
4.2 Handling Precautions
General Handling
Chips should be handled with care using tweezers or a vacuum collet. Users should take
precautions to protect chips from direct human contact that can deposit contaminants,
like perspiration and skin oils on any of the chip's surfaces.
Static Sensitivity
GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, and
transported only in static protected environments.
Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or
expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are
opened, chips should be stored in a dry nitrogen atmosphere.
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MMQ-40125H
4.3 Bonding Diagram
Click here for a DWG of the above layout.
Bonding interface geometries are completely dependent on customer circuit board substrate,
interface design is required. Contact factory for support.
Reference PCB design shown above can be downloaded here. Reference PCB design is the same
design used in the M package module.
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MMQ-40125H
5. Mechanical Data
5.1 CH Package Outline Drawing
1. CH Substrate material is 0.004 in thick GaAs.
2. I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.
5.2 M Package Outline Drawing
Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice.
Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any
product.
© Marki Microwave, Inc.
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